Ms. Hye-Jin Shin Profile

Hye-Jin Shin

at SK Hynix Inc

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 2 April 2010 Paper

Improvement of the process overlay control for sub-40-nm DRAM

Sarohan Park, Eun-Ha Lee, Eun-Kyoung Shin, Yoon-Jung Ryu, Hye-Jin Shin, Seung-Hyun Hwang, Hee-Youl Lim, Kyu-Tae Sun, Tae-Seung Eom, Noh-Jung Kwak, Sung-Ki Park

Proceedings Volume 7638, 76382H (2010) https://doi.org/10.1117/12.846489

KEYWORDS: Semiconducting wafers, Overlay metrology, Chemical mechanical planarization, Process control, Distortion, Photomasks, Optical alignment, Optical lithography, Data modeling, Control systems

Read Abstract +

Proceedings Article | 4 March 2010 Paper

Applications of MoSi-based binary intensity mask for sub-40nm DRAM

Tae-Seung Eom, Eun-Kyoung Shin, Eun-Ha Lee, Yoon-Jung Ryu, Jun-Taek Park, Sunyoung Koo, Hye-Jin Shin, Seung-Hyun Hwang, Hee-Youl Lim, Sarohan Park, Kyu-Tae Sun, Noh-Jung Kwak, Sung-Ki Park

Proceedings Volume 7640, 76402J (2010) https://doi.org/10.1117/12.846728

KEYWORDS: Photomasks, Binary data, Transmittance, Diffraction, Chromium, Polarization, Lithography, Scanners, Nanoimprint lithography, Optical lithography

Read Abstract +

In this paper, we will present applications of MoSi-based binary intensity mask for sub-40nm DRAM with hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination and mask materials in hyper-NA imaging. One att.PSM (Phase Shift Mask) and three types of binary intensity mask are used for this experiment; those are ArF att.PSM ( MoSi:760Å , transmittance 6% ), conventional Cr ( 1030Å ) BIM (Binary Intensity Mask), MoSi-based BIM ( MoSi:590Å , transmittance 0.1%) and multi layer ( Cr:740Å / MoSi:930Å ) BIM. Simulation and experiment with 1.35NA immersion scanner are performed to study influence of mask structure, process margin and effect of polarization. Two types of DRAM cell patterns are studied; one is a line and space pattern and the other is a contact hole pattern through mask structure. Various line and space pattern is also through 38nm to 50nm half pitch studied for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE is also used in order to study the influence of mask structure and polarization effect through rigorous EMF simulation. Transmission and polarization effects of zero and the first diffraction orders are simulated for both att.PSM and BIM. First and zero diffraction order polarization are shown to be influenced by the structure of masking film. As pattern size on mask decreases to the level of exposure wavelength, incident light will interact with mask pattern, thereby transmittance changes for mask structure. Optimum mask bias is one of the important factors for lithographic performance. In the case of att.PSM, negative bias shows higher image contrast than positive one, but in the case of binary intensity mask, positive bias shows better performance than negative one. This is caused by balance of amplitude between first diffraction order and zero diffraction order light.1 Process windows and mask error enhancement factors are measured with respect to several types of mask structure. In the case of one dimensional line and space pattern, MoSi-based BIM and conventional Cr BIM show the best performance through various pitches. But in the case of hole DRAM cell pattern, it is difficult to find out the advantage of BIM except of exposure energy difference. Finally, it was observed that MoSi-based binary intensity mask for sub- 40nm DRAM has advantage for one dimensional line and space pattern.

Proceedings Article | 4 December 2008 Paper

CD uniformity improvement of sub 60nm contact hole using model based OPC

Hyoung-Soon Yune, Yeong-Bae Ahn, Jung-Chan kim, Hye-Jin Shin, Gyun Yoo, James Moon, Byoung-Sub Nam, Donggyu Yim

Proceedings Volume 7140, 71403E (2008) https://doi.org/10.1117/12.804654

KEYWORDS: Optical proximity correction, Critical dimension metrology, Model-based design, Data modeling, Calibration, Semiconducting wafers, Photomasks, Resolution enhancement technologies, Etching, Instrument modeling

Read Abstract +

Proceedings Article | 4 December 2008 Paper

Resolution enhancement techniques for contact hole printing of sub-50nm memory device

Hye-Jin Shin, Tae-jun You, Min-Ae Yoo, Jin-Young Choi, Kiho Yang, Chan-Ha Park, Dong-gyu Yim

Proceedings Volume 7140, 714034 (2008) https://doi.org/10.1117/12.804646

KEYWORDS: SRAF, Diffractive optical elements, Resolution enhancement technologies, Photoresist processing, Lithography, Printing, Source mask optimization, Fiber optic illuminators, Semiconducting wafers, Optical lithography

Read Abstract +

Proceedings Article | 7 March 2008 Paper

The analysis of optical lithography at 2-dimensional dense structure

Chanha Park, Tae-Seung Eom, Hyejin Shin, Kiho Yang, Jinyoung Choi, Jinsoo Kim, Hyeongsoo Kim, Donggyu Yim, Jinwoong Kim

Proceedings Volume 6924, 69244V (2008) https://doi.org/10.1117/12.772446

KEYWORDS: Transistors, Optical lithography, Photomasks, Lithography, Printing, 3D image processing, Binary data, Critical dimension metrology, Etching, Photoresist processing

Read Abstract +

Proceedings Article | 7 March 2008 Paper

Evaluation of inverse lithography technology for 55nm-node memory device

Byung-ug Cho, Sung-woo Ko, Jae-seung Choi, Cheol-Kyun Kim, Hyun-jo Yang, DongGyu Yim, David Kim, Bob Gleason, KiHo Baik, Ying Cui, Thuc Dam, Linyong Pang

Proceedings Volume 6924, 692438 (2008) https://doi.org/10.1117/12.772515

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Manufacturing, SRAF, Scanners, Atrial fibrillation, Calibration, Optimization (mathematics), Distance measurement

Read Abstract +

Showing 5 of 6 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years