Dr. Jaeyoung Choi Profile

Dr. Jaeyoung Choi

at SAMSUNG Electronics Co Ltd

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 23 March 2011 Paper

Paper

Overcome the process limitation by using inverse lithography technology with assist feature

Yeon-Ah Shim, Sungho Jun, Jaeyoung Choi, Kwangseon Choi, Jae-won Han, Kechang Wang, John McCarthy, Guangming Xiao, Grace Dai, DongHwan Son, Xin Zhou, Tom Cecil, David Kim, Ki-Ho Baik

Proceedings Volume 7973, 79732S (2011) https://doi.org/10.1117/12.870704

KEYWORDS: Lithography, SRAF, Photomasks, Image processing, Optical lithography, Optical proximity correction, Semiconducting wafers, Resolution enhancement technologies, Overlay metrology, Logic

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Proceedings Article | 23 March 2011 Paper

Paper

Improvement on post-OPC verification efficiency for contact/via coverage check by final CD biasing of metal lines and considering their location on the metal layout

Youngmi Kim, Jae-Young Choi, Kwangseon Choi, Jung-Hoe Choi, Sooryong Lee

Proceedings Volume 7973, 79732T (2011) https://doi.org/10.1117/12.870707

KEYWORDS: Etching, Metals, Optical proximity correction, Error analysis, Resolution enhancement technologies, Bridges, Photomasks, Model-based design, Head, Logic devices

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As IC design complexity keeps increasing, it is more and more difficult to ensure the pattern transfer after optical proximity correction (OPC) due to the continuous reduction of layout dimensions and lithographic limitation by k1 factor. To guarantee the imaging fidelity, resolution enhancement technologies (RET) such as off-axis illumination (OAI), different types of phase shift masks and OPC technique have been developed. In case of model-based OPC, to cross-confirm the contour image versus target layout, post-OPC verification solutions continuously keep developed - contour generation method and matching it to target structure, method for filtering and sorting the patterns to eliminate false errors and duplicate patterns. The way to detect only real errors by excluding false errors is the most important thing for accurate and fast verification process - to save not only reviewing time and engineer resource, but also whole wafer process time and so on. In general case of post-OPC verification for metal-contact/via coverage (CC) check, verification solution outputs huge of errors due to borderless design, so it is too difficult to review and correct all points of them. It should make OPC engineer to miss the real defect, and may it cause the delay time to market, at least. In this paper, we studied method for increasing efficiency of post-OPC verification, especially for the case of CC check. For metal layers, final CD after etch process shows various CD bias, which depends on distance with neighbor patterns, so it is more reasonable that consider final metal shape to confirm the contact/via coverage. Through the optimization of biasing rule for different pitches and shapes of metal lines, we could get more accurate and efficient verification results and decrease the time for review to find real errors. In this paper, the suggestion in order to increase efficiency of OPC verification process by using simple biasing rule to metal layout instead of etch model application is presented.

Proceedings Article | 27 May 2010 Paper

Paper

Improvement of KrF contact layer by inverse lithography technology with assist feature

Sungho Jun, Yeon-Ah Shim, Jaeyoung Choi, Kwangsun Choi, Jae-won Han, Kechang Wang, John McCarthy, Guangming Xiao, Grace Dai, DongHwan Son, Xin Zhou, Tom Cecil, David Kim, KiHo Baik

Proceedings Volume 7748, 77481V (2010) https://doi.org/10.1117/12.868563

KEYWORDS: Lithography, SRAF, Photomasks, Image processing, Optical lithography, Optical proximity correction, Resolution enhancement technologies, Lithographic illumination, Scanners, Computer simulations

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Proceedings Article | 23 September 2009 Paper

Paper

Effective methodology to make DFM guide line

Jaeyoung Choi, Yeonah Shim, Kyunghee Yun, Kwangseon Choi, Jaewon Han

Proceedings Volume 7488, 74883K (2009) https://doi.org/10.1117/12.833463

KEYWORDS: Design for manufacturing, Optical proximity correction, Semiconducting wafers, Transistors, Scanning electron microscopy, Semiconductors, Metals, Resolution enhancement technologies, Photomask technology, Current controlled current source

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Proceedings Article | 23 September 2009 Paper

Paper

Patterning of 90nm node flash contact hole with assist feature using KrF

Yeonah Shim, Sungho Jun, Jaeyoung Choi, Kwangseon Choi, Jae-won Han, Kechang Wang, John McCarthy, Guangming Xiao, Grace Dai, DongHwan Son, Xin Zhou, Thomas Cecil, David Kim, KiHo Baik

Proceedings Volume 7488, 748837 (2009) https://doi.org/10.1117/12.833499

KEYWORDS: Lithography, SRAF, Photomasks, Optical lithography, Image processing, Lithographic illumination, Optical proximity correction, Resolution enhancement technologies, Scanners, Computer simulations

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Proceedings Article | 16 March 2009 Paper

Paper

Smart data filtering for enhancement of model accuracy

Shady Abdelwahed, Jae Hyun Kang, Jaeyoung Choi, Jong Doo Kim, Hyesung Lee, Sungho Jun, Youngmi Kim

Proceedings Volume 7274, 727423 (2009) https://doi.org/10.1117/12.814153

KEYWORDS: Calibration, Data modeling, Process modeling, Optical proximity correction, Lithography, Semiconducting wafers, Scanning electron microscopy, Photomasks, Image processing, Critical dimension metrology

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Proceedings Article | 17 October 2008 Paper

Paper

Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography

Jong-doo Kim, Jae-young Choi, Jea-hee Kim, Jae-won Han

Proceedings Volume 7122, 71220X (2008) https://doi.org/10.1117/12.801557

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Chromium, Optical proximity correction, Optical simulations, Resolution enhancement technologies, Binary data, Electrons, Optical lithography

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Proceedings Article | 17 October 2008 Paper

Paper

Design for manufacturability guideline development: integrated foundry approach

Hyesung Lee, Yeon-Ah Shim, Jae-Young Choi, Kwang-Seon Choi, Joanne Wu, Bo Su, Xinwei Zhou, Kenny Kim

Proceedings Volume 7122, 712221 (2008) https://doi.org/10.1117/12.801421

KEYWORDS: Optical proximity correction, Design for manufacturing, Nanoimprint lithography, Design for manufacturability, Semiconducting wafers, Lithography, Silicon, Wafer manufacturing, Yield improvement, Manufacturing

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Proceedings Article | 17 October 2008 Paper

Paper

Combination of rule and pattern based lithography unfriendly pattern detection in OPC flow

Jae-Hyun Kang, Jae-Young Choi, Yeon-Ah Shim, Hye-Sung Lee, Bo Su, Walter Chan, Ping Zhang, Joanne Wu, Keun-Young Kim

Proceedings Volume 7122, 71221N (2008) https://doi.org/10.1117/12.801312

KEYWORDS: Optical proximity correction, Design for manufacturing, Lithography, Scanning electron microscopy, Detection and tracking algorithms, Databases, Bridges, Model-based design, Fuzzy logic, Defect detection

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Foundry companies encounter again and again the same or similar lithography unfriendly patterns (Hot-spots) in different designs within the same technology node and across different technology nodes, which eluded design rule check (DRC), but detected again and again in OPC verification step. Since Model-based OPC tool applies OPC on whole-chip design basis, individual hot-spot patterns are treated same as the rest of design patterns, regardless of its severity. We have developed a methodology to detect those frequently appeared hot-spots in pre-OPC design, as well as post OPC designs to separate them from the rest of designs, which provide the opportunity to treat them differently in early OPC flow. The methodology utilizes the combination of rule based and pattern based detection algorithms. Some hotspot patterns can be detected using rule-based algorithm, which offer the flexibility of detecting similar patterns within pre-defined ranges. However, not all patterns can be detected (or defined) by rules. Thus, a pattern-based approach is developed using defect pattern library concept. The GDS/OASIS format hot-spot patterns can be saved into a defect pattern library. Fast pattern matching algorithm is used to detect hot-spot patterns in a design using the library as a pattern template database. Even though the pattern matching approach lacks the flexibility to detect patterns' similarity, but it has the capability to detect any patterns as long as a template exists. The pattern-matching algorithm can be either exact match or a fuzzy match. The rule based and pattern based hot-spot pattern detection algorithms complement each other and offer both speed and flexibility in hot spot pattern detection in pre-OPC and post-OPC designs. In this paper, we will demonstrate the methodology in our OPC flow and the benefits of such methodology application in production environment for 90nm designs. After the hot spot pattern detection, examples of special treatment to selected hot spot patterns will be shown.

Proceedings Article | 1 April 2008 Paper

Paper

Resolution enhancement techniques in 65 nm node nested-hole patterning

Hyesung Lee, Jaeyoung Choi, Jeahee Kim, Jaewon Han, Keun-Young Kim

Proceedings Volume 6924, 69244B (2008) https://doi.org/10.1117/12.773017

KEYWORDS: Nanoimprint lithography, Resolution enhancement technologies, Optical lithography, Photomasks, Critical dimension metrology, Diffractive optical elements, SRAF, Photoresist processing, Lithography, Optical proximity correction

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Proceedings Article | 1 April 2008 Paper

Paper

Improvement on OPC completeness through pre-OPC hot spot detection and fix

Yeonah Shim, Jaeyoung Choi, Jeahee Kim, Bo Su, Ping Zhang, Keun-Young Kim

Proceedings Volume 6925, 692513 (2008) https://doi.org/10.1117/12.772409

KEYWORDS: Optical proximity correction, Design for manufacturing, Lithography, Semiconducting wafers, Data processing, Semiconductors, Failure analysis, Integrated circuit design, Design for manufacturability, Manufacturing

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Proceedings Article | 1 April 2008 Paper

Paper

Full chip compensation for local-flare-induced CD error using OPC/DRC method

Jae-Young Choi, Yeon-Ah Shim, Kyung-Hee Yun, Jong-Doo Kim, Jae-Hee Kim, Jae-Won Han

Proceedings Volume 6924, 69243L (2008) https://doi.org/10.1117/12.773092

KEYWORDS: Optical proximity correction, Data modeling, Critical dimension metrology, Semiconducting wafers, Photomasks, Error analysis, Lithography, Scattering, Glasses, Metals

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Proceedings Article | 7 March 2008 Paper

Paper

OPC modeling setup with considering flare effect

Jong-doo Kim, Jae-young Choi, Jea-hee Kim, Jae-won Han

Proceedings Volume 6924, 692442 (2008) https://doi.org/10.1117/12.772454

KEYWORDS: Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Data modeling, Light scattering, Photomasks, Lens design, Manufacturing, Lithography, Optimization (mathematics)

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Proceedings Article | 7 March 2008 Paper

Paper

Reticle CD error calibrated OPC model generation

Youngmi Kim, Jae-Young Choi, Jong-Doo Kim, Jeahee Kim, Jae-Won Han

Proceedings Volume 6924, 69243J (2008) https://doi.org/10.1117/12.773026

KEYWORDS: Data modeling, Reticles, Optical proximity correction, Critical dimension metrology, Calibration, Cadmium, Databases, Statistical modeling, Semiconducting wafers, Photomasks

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Proceedings Article | 27 March 2007 Paper

Paper

Advanced new OPC method to improve OPC accuracy for sub-90-nm technology

Jaeyoung Choi, Jaehyun Kang, Yeonah Shim, Kyunghee Yun, Jiho Hong, Yongseok Lee, Keeho Kim

Proceedings Volume 6520, 652047 (2007) https://doi.org/10.1117/12.712001

KEYWORDS: Data modeling, Optical proximity correction, Data conversion, Process modeling, Critical dimension metrology, Reactive ion etching, Scanning electron microscopy, Photomasks, Etching, Image processing

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Proceedings Article | 20 October 2006 Paper

Paper

The effect of sub-layer condition on the OPC model

Jaeyoung Choi, Jaehyun Kang, Yeonah Shim, Kyunghee Yun, Junseok Lee, Yongseok Lee, Keeho Kim

Proceedings Volume 6349, 63494O (2006) https://doi.org/10.1117/12.686653

KEYWORDS: Data modeling, Optical proximity correction, Statistical modeling, Critical dimension metrology, Process modeling, Lithography, Scanners, Photoresist materials, Photoresist processing, Optimization (mathematics)

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Proceedings Article | 20 October 2006 Paper

Paper

Efficient approach to improving pattern fidelity with multi-OPC model and recipe

Munhoe Do, Jaehyun Kang, Jaeyoung Choi, Junseok Lee, Yongsuk Lee, Keeho Kim

Proceedings Volume 6349, 63494P (2006) https://doi.org/10.1117/12.686655

KEYWORDS: Optical proximity correction, Logic, Databases, System on a chip, Data modeling, Photomasks, Instrument modeling, Manufacturing, Electronics, Distortion

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Proceedings Article | 20 May 2006 Paper

Paper

A study for effect of rounded contact hole pattern by laser mask writing machine onto wafer process margin

Se-Jin Park, Kyung-Hee Yoon, Jae-Hyun Kang, Jae-Young Choi, Yong-Suk Lee, Keeho Kim

Proceedings Volume 6283, 62831K (2006) https://doi.org/10.1117/12.681745

KEYWORDS: Photomasks, Semiconducting wafers, Deep ultraviolet, Lithography, Laser systems engineering, Electron beam lithography, Critical dimension metrology, Scanners, Back end of line, Data modeling

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Proceedings Article | 20 March 2006 Paper

Paper

Simulation based post OPC verification to enhance process window, critical failure analysis, and yield

Jae-Hyun Kang, Jae-Young Choi, Kyung-Hee Yun, Munho Do, Yong-Suk Lee, Keeho Kim

Proceedings Volume 6154, 61543J (2006) https://doi.org/10.1117/12.657050

KEYWORDS: Optical proximity correction, Process modeling, Critical dimension metrology, Photomasks, Bridges, Lithography, Semiconducting wafers, Failure analysis, Data modeling, Scanning electron microscopy

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Proceedings Article | 20 March 2006 Paper

Paper

Mask process variation induced OPC accuracy in sub-90nm technology node

Se-Jin Park, Yeon-Ah Shim, Jae-Hyun Kang, Jae-Young Choi, Kyung-Hee Yoon, Yong-Suk Lee, Keeho Kim

Proceedings Volume 6154, 61543K (2006) https://doi.org/10.1117/12.657036

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Electroluminescence, Critical dimension metrology, Lithography, Data modeling, Error analysis, Logic, Etching

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Showing 5 of 20 publications

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