Dr. Norbert Linder Profile

Dr. Norbert Linder

at OSRAM Licht AG

SPIE Involvement:

Author

Proceedings Article | 26 February 2010 Paper

Simulation of facet heating in high-power red lasers

J. M. Tijero, H. Odriozola, I. Esquivias, A. Martin-Minguez, L. Borruel, A. Gomez-Iglesias, M. Reufer, M. Bou-Sanayeh, P. Brick, N. Linder, M. Ziegler, J. Tomm

Proceedings Volume 7597, 75971G (2010) https://doi.org/10.1117/12.841970

KEYWORDS: Nonabsorbing mirrors, Optical simulations, Absorption, Quantum wells, Mirrors, Temperature metrology, Solids, Aluminium gallium indium phosphide, Electro optical modeling, High power lasers

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Proceedings Article | 3 February 2009 Paper

Beam-shaping properties of InGaN thin-film micro-cavity light-emitting diodes with photonic crystals

K. Bergenek, Ch. Wiesmann, H. Zull, C. Rumbolz, R. Wirth, N. Linder, K. Streubel, T. Krauss

Proceedings Volume 7231, 72310C (2009) https://doi.org/10.1117/12.807617

KEYWORDS: Light emitting diodes, Diffraction, Gallium nitride, Photonic crystals, Thin films, Indium gallium nitride, Mirrors, Waveguides, Absorption, Reflectivity

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Proceedings Article | 21 April 2008 Paper

Analysis of the emission characteristics of photonic crystal LEDs

Ch. Wiesmann, K. Bergenek, N. Linder, U. Schwarz

Proceedings Volume 6989, 69890L (2008) https://doi.org/10.1117/12.780572

KEYWORDS: Light emitting diodes, Diffraction, Finite-difference time-domain method, Photonic crystals, Indium gallium nitride, Refractive index, Semiconductors, Interfaces, Solids, Mirrors

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Proceedings Article | 13 February 2007 Paper

Measurement of the internal quantum efficiency of InGaN quantum wells

A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, B. Hahn

Proceedings Volume 6486, 64860J (2007) https://doi.org/10.1117/12.700829

KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Temperature metrology, Doping, Light emitting diodes, Luminescence, Internal quantum efficiency, Electron holes, Magnesium

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Proceedings Article | 13 February 2007 Paper

Self-consistent modeling of resonant PL in InGaN SQW LED-structure

M. Sabathil, A. Laubsch, N. Linder

Proceedings Volume 6486, 64860V (2007) https://doi.org/10.1117/12.700461

KEYWORDS: Quantum wells, Indium gallium nitride, Electrons, Electroluminescence, Light emitting diodes, Doping, Luminescence, Absorption, Indium, Data modeling

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Proceedings Article | 18 June 2004 Paper

Color-dependent degradation of high-brightness AlGaInP LEDs

Paola Altieri, Arndt Jaeger, Reiner Windisch, Norbert Linder, Peter Stauss, Raimund Oberschmid, Klaus Streubel

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.529209

KEYWORDS: Light emitting diodes, Aluminium gallium indium phosphide, External quantum efficiency, Internal quantum efficiency, Aluminum, Quantum wells, Quantum efficiency, Electrons, Reliability, Gallium arsenide

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Proceedings Article | 4 June 2002 Paper

Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm

Moritz Mueller, Norbert Linder, Christian Karnutsch, Wolfgang Schmid, Klaus Streubel, Johann Luft, Svent-Simon Beyertt, Adolf Giesen, Gottfried Doehler

Proceedings Volume 4649, (2002) https://doi.org/10.1117/12.469242

KEYWORDS: Semiconductor lasers, Quantum wells, Absorption, Semiconductors, Mirrors, Reflectivity, Optical pumping, Optical semiconductors, Pulsed laser operation, Aluminium gallium indium phosphide

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Proceedings Article | 14 May 2001 Paper

High-brightness AlGaInP light-emitting diodes using surface texturing

Norbert Linder, Siegmar Kugler, Peter Stauss, Klaus Streubel, Ralph Wirth, Heribert Zull

Proceedings Volume 4278, (2001) https://doi.org/10.1117/12.426852

KEYWORDS: Light emitting diodes, Luminous efficiency, Reflection, Aluminium gallium indium phosphide, Absorption, Semiconductors, Light sources and illumination, Gallium arsenide, Internal quantum efficiency, Standards development

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Proceedings Article | 19 April 1996 Paper

Fast MSM modulators based on the two-dimensional Franz-Keldysh effect in MQW structures

Michael Kneissl, Peter Kiesel, Norbert Linder, Angela Thranhardt, Helmut Grothe, Gottfried Doehler

Proceedings Volume 2694, (1996) https://doi.org/10.1117/12.238397

KEYWORDS: Absorption, Modulators, Excitons, Quantum wells, Capacitance, Modulation, Electrooptic modulators, Metals, Gallium arsenide, Semiconductors

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Proceedings Article | 3 September 1992 Paper

Transition from miniband to Wannier-Stark states in GaAs-AlAs superlattices

Klaus Schmidt, Alessandra D'Intino, Norbert Linder, M. Tuna, Gottfried Doehler, Holger Grahn, Klaus Ploog, K. Kawashima, Kenzo Fujiwara

Proceedings Volume 1675, (1992) https://doi.org/10.1117/12.137619

KEYWORDS: Absorption, Electrons, Stereolithography, Quantum wells, Superlattices, Modulation, Double positive medium, Physics, Spectroscopy, Gallium arsenide

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Proceedings Article | 1 August 1990 Paper

Photoreflectance of GaAs/AlGaAs hetero n-i-p-i structures

Ulrich Keil, Michael Forkel, Norbert Linder, Klaus Schmidt, Gottfried Doehler, Jeffrey Miller

Proceedings Volume 1286, (1990) https://doi.org/10.1117/12.20863

KEYWORDS: Quantum wells, Electrons, Gallium arsenide, Dielectrics, Absorption, Modulation, Spectroscopy, Temperature metrology, Photons, Information operations

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Proceedings Article | 1 August 1990 Paper

Electromodulation and photomodulation spectroscopy of long-period doping superlattices

Norbert Linder, W. El-Banna, Ulrich Keil, Klaus Schmidt, Gottfried Doehler, Jeffrey Miller, Karl Ebeling

Proceedings Volume 1286, (1990) https://doi.org/10.1117/12.20865

KEYWORDS: Modulation, Spectroscopy, Gallium arsenide, Doping, Absorption, Superlattices, Dielectrics, Particles, Refractive index, Optical properties

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Showing 5 of 12 publications

SPIE Conference Volume | 16 February 2012

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI

SPIE Conference Volume | 3 February 2011

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV

SPIE Conference Volume | 8 February 2010

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV

Conference Committee Involvement (10)

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI

24 January 2012 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV

25 January 2011 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XIX

24 January 2011 | San Francisco, California, United States

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV

26 January 2010 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XVIII

25 January 2010 | San Francisco, California, United States

Showing 5 of 10 Conference Committees

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