Mr. Rudy J. M. Pellens Profile

Rudy J. M. Pellens

Senior Design Engineering and Architecture TL at ASML Netherlands B.V.

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Publications (8)

Proceedings Article | 16 October 2017 Presentation

EUV Infrastructure: EUV photomask backside cleaning (Conference Presentation)

Bruce Fender, Dusty Leonhard, Hugo Breuer, Jack Stoof, My-Phung Van, Rudy J. Pellens, Reinout Dekkers, Jan-Pieter Kuijten

Proceedings Volume 10450, 1045009 (2017) https://doi.org/10.1117/12.2280387

KEYWORDS: Photomasks, Extreme ultraviolet, Reticles, Pellicles, Scanners, Contamination, Inspection, Extreme ultraviolet lithography, Reflectivity, Oxygen

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EUV Infrastructure: EUV photomask backside cleaning Applied Materials as first author: Bruce J. Fender, Dusty Leonhard, Hugo Breuer, Jack Stoof ASML: My Phung Van, Rudy Pellens, Reinout Dekkers, Jan Pieter Kuijten Due to electrostatic chucking of the backside of EUV masks, backside cleanliness in EUV lithography is an important factor. Contamination on the backside can cause damage to reticle (e-chuck), cross-contaminate to the scanner or cause local distortions in the reticle. Cleaning of the masks offers a solution to reduce the defectivity level on reticles. However, repeated cleaning on masks is known to have an impact on absorber, CD and reflectivity. Ideally, cleaning should occur without any alterations to the critical features on the front side of the mask. With the introduction of pellicles for EUV, there could be an additional drive for backside-only cleaning. In this work the GuardianTM Technology is introduced that enables backside cleaning without any cleaning impact on the reticle front side through a protective seal at the outer edge of the mask. The seal protects the front side during the backside clean. The cleaning process encompasses a single-sided pre-clean oxygen plasma treatment of the mask surface, followed by sonic cleaning, and ending with a rinse and dry step. Separating the mask backside from front side enables: • Backside cleaning without any cleaning impact on features on the mask front side. • The isolation allows an aggressive cleaning of the backside to ensure defect removal. • Processing of reticle with studs on the front side. This prevents unnecessary actions of stud removal and removal of the remaining glue after stud removal and subsequent gluing of the studs after cleaning. Just before chucking of a reticle, the defectivity level on the mask is initially inspected with an in-scanner reticle backside inspection tool. The GuardianTM cleaning process is able to remove the vast majority of the cleanable defects that could impact scanner performance. Post GuardianTM clean interferometric microscope defect review reveals the remaining defects > 25-μm-PSL are ~78% are indent/damage and 11% are defects with insignificant height to impact scanner performance or cleanliness.

Proceedings Article | 4 September 2015 Paper

Understanding of Out-of-Band DUV light in EUV lithography: controlling impact on imaging and mitigation strategies

N. Davydova, R. Kottumakulal, J. Hageman, J. McNamara, R. Hoefnagels, V. Vaenkatesan, A. van Dijk, K. Ricken, L. de Winter, R. de Kruif, R. Jonckheere, T. Hollink, G. Schiffelers, E. van Setten, P. Colsters, W. Liebregts, R. Pellens, J. van Dijk

Proceedings Volume 9661, 96610B (2015) https://doi.org/10.1117/12.2195733

KEYWORDS: Aluminum, Deep ultraviolet, Reflectivity, Reticles, Semiconducting wafers, Scanners, Extreme ultraviolet, Extreme ultraviolet lithography, Coating, Reflection

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EUV sources emit a broad band DUV Out-of-Band (OOB) light, in particular, in the wavelength range 100-400 nm. This can cause additional exposure of EUV resists made that are based on a ArF/KrF resist platform. This DUV light is partially suppressed while travelling through the optical path but a non-negligible part of it reaches wafer level and impacts imaging.

This is important for imaging at the edges of an image field when fields are printed very close to each other on the wafer (so-called butted fields, with zero field to field spacing). DUV light is reflected from the reticle black border (BB) into a neighboring exposure field on the wafer. This results in a CD change at the edges and in the corners of the fields and therefore has an impact on CD uniformity. Experimental CDU results are shown for 16 nm dense lines (DL) and 20 nm isolated spaces (IS) (N7 logic design features) in the fields exposed at 0 mm and 0.5mm distance on the wafer. Areas close to the edge of the image field are important for customer applications as they often contain qualification and monitoring structures; in addition, limited imaging capabilities in this area may result in loss of usable wafer space.

In order to understand and control OOB DUV light, it must be measured in the scanner. DUV measurements are performed in resist using a special OOB reticle coated with Aluminum (Al) having low EUV reflectance and high DUV reflectance. A model for DUV light impact on the imaging is proposed and verified. For this, DUV reflectance data is collected in the wavelengths range 100-400 nm for Al and BB and the ratio of reflectances of these materials is determined for assumed scanner and resist OOB spectra. Also direct BB OOB test is performed on the wafer and compared to Al OOB results. The sensitivity of 16 nm DL and 20 nm IS to OOB light is experimentally determined by means of double exposure test: a wafer with exposed imaging structures undergoes a second flood exposure from a DUV reflective material (Al or BB).

Finally, several OOB mitigation strategies are discussed, in particular, suppression of DUV light in the scanner (~3x improvement), recent successes of DUV suppression for 16 nm imaging resist (~1.8x improvement) and DUV reflectance mitigation in the reticle black border (~3.8x). An overview of OOB test results for multiple NXE systems will be shown including systems with new NXE:3350 optics with improved OOB suppression.

Proceedings Article | 25 March 2003 Paper

Lithographic performance of an ASML i-line step-and-repeat system by using photosensitive Durimides

Rudy Pellens, Angelique van Klaveren, Rutger Voets, Jean-Paul van den Heuvel, Sylvain Misat, Pamela Waterson, Laurie Peterson

Proceedings Volume 4945, (2003) https://doi.org/10.1117/12.471974

KEYWORDS: Microelectromechanical systems, Lithography, Semiconducting wafers, Manufacturing, Packaging, Calibration, Photoresist materials, Micromachining, Critical dimension metrology, Silicon

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Proceedings Article | 15 January 2003 Paper

Process conditions and lithographic performance arch durimide polyimides in the ultra-thick film regime

Sylvain Misat, Rudy Pellens, Rutger Voets, Angelique van Klaveren, Jean-Paul van den Heuvel, L. Peterson, Pamela Waterson, D. Racicot, D. Roza

Proceedings Volume 4979, (2003) https://doi.org/10.1117/12.478241

KEYWORDS: Semiconducting wafers, Lithography, Microelectromechanical systems, Packaging, Coating, Polymers, Critical dimension metrology, Resistance, Thin film coatings, Micromachining

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Proceedings Article | 9 November 2001 Paper

Microelectronics planar technologies for the manufacturing of high spatial frequency gratings: sub-angstroem assessment of spatial coherence

Olivier Parriaux, Y. Jourlin, Florent Pigeon, G. Bouchet, Paul Van Dijk, Rudy Pellens, Suat Topcu, Yasser Alayli, Marc Bonis

Proceedings Volume 4440, (2001) https://doi.org/10.1117/12.448042

KEYWORDS: Diffraction gratings, Sensors, Head, Diffraction, Spatial frequencies, Spatial coherence, Semiconducting wafers, Phase measurement, Microelectronics, Manufacturing

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Proceedings Article | 26 July 1999 Paper

Novel aberration monitor for optical lithography

Peter Dirksen, Casper Juffermans, Rudy Pellens, Mireille Maenhoudt, Peter De Bisschop

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354385

KEYWORDS: Monochromatic aberrations, Spherical lenses, Interferometry, Reticles, Binary data, Optical lithography, Zernike polynomials, Data modeling, Prototyping, Critical dimension metrology

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Proceedings Article | 7 July 1997 Paper

Effect of processing on the overlay performance of a wafer stepper

Peter Dirksen, Casper Juffermans, A. Leeuwestein, Kees Mutsaers, Tom Nuijs, Rudy Pellens, Robert Wolters, Jack Gemen

Proceedings Volume 3050, (1997) https://doi.org/10.1117/12.275950

KEYWORDS: Optical alignment, Semiconducting wafers, Aluminum, Chemical mechanical planarization, Metals, Photoresist processing, Light scattering, Polishing, Sputter deposition, Diffraction

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Proceedings Article | 7 June 1996 Paper

Focus and exposure dose determination using stepper alignment

Peter Dirksen, Rudy Pellens, Casper Juffermans, Marijan Reuhman-Huisken, Hans van der Laan

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240941

KEYWORDS: Optical alignment, Semiconducting wafers, Silicon, Solids, Deep ultraviolet, Imaging systems, Calibration, Refractive index, Lithography, Chromium

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Showing 5 of 8 publications

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