Dr. Guido Schiffelers Profile

Dr. Guido Schiffelers

Principal Architect at ASML Netherlands BV

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 23 March 2020 Paper

Spectral purity performance of high-power EUV systems

Mark van de Kerkhof, Fei Liu, Marieke Meeuwissen, Xueqing Zhang, Robert de Kruif, Natalia Davydova, Guido Schiffelers, Felix Wählisch, Eelco van Setten, Wouter Varenkamp, Kees Ricken, Laurens de Winter, John McNamara, Muharrem Bayraktar

Proceedings Volume 11323, 1132321 (2020) https://doi.org/10.1117/12.2551021

KEYWORDS: Extreme ultraviolet, Deep ultraviolet, Extreme ultraviolet lithography, Reflectivity, Reticles, Imaging systems, Scanners

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Proceedings Article | 26 September 2019 Presentation + Paper

Improving exposure latitudes and aligning best focus through pitch by curing M3D phase effects with controlled aberrations

Joern-Holger Franke, Joost Bekaert, Victor Blanco, Lieve Van Look, Felix Wahlisch, Kateryna Lyakhova, Paul van Adrichem, Mark Maslow, Guido Schiffelers, Eric Hendrickx

Proceedings Volume 11147, 111470E (2019) https://doi.org/10.1117/12.2537104

KEYWORDS: Diffraction, Extreme ultraviolet lithography, Metals, Photomasks, Semiconducting wafers, Nanoimprint lithography, Optical proximity correction, Extreme ultraviolet, Phase modulation, Phase shift keying

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Proceedings Article | 26 March 2019 Presentation + Paper

Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning

Pieter Vanelderen, Victor Blanco, Ming Mao, Yoann Tomczak, David de Roest, Nicola Kissoon, Paulina Rincon Delgadillo, Gijsbert Rispens, Guido Schiffelers, Abhinav Pathak, Frederic Lazzarino, Danilo De Simone, Etienne de Poortere, Moyra Mc Manus, Daniele Piumi, Eric Hendrickx, Geert Vandenberghe

Proceedings Volume 10957, 109570S (2019) https://doi.org/10.1117/12.2515503

KEYWORDS: Etching, Lithography, Extreme ultraviolet lithography, Photoresist materials, Logic, Optical lithography

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Proceedings Article | 26 March 2019 Presentation + Paper

Impact of local variability on defect-aware process windows

Mark John Maslow, Hidetami Yaegashi, Andreas Frommhold, Guido Schiffelers, Felix Wahlisch, Gijsbert Rispens, Bram Slachter, Keisuke Yoshida, Arisa Hara, Noriaki Oikawa, Abhinav Pathak, Dorin Cerbu, Eric Hendrickx, Joost Bekaert

Proceedings Volume 10957, 109570H (2019) https://doi.org/10.1117/12.2514719

KEYWORDS: Critical dimension metrology, Etching, Metrology, Lithography, Semiconducting wafers, Photoresist processing, Statistical analysis, Optical lithography, Stochastic processes

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Proceedings Article | 26 March 2019 Presentation + Paper

Roughness decomposition: an on-wafer methodology to discriminate mask, metrology, and shot noise contributions

Gian Francesco Lorusso, Gijsbert Rispens, Vito Rutigliani, Frieda Van Roey, Andreas Frommhold, Guido Schiffelers

Proceedings Volume 10959, 109590T (2019) https://doi.org/10.1117/12.2515175

KEYWORDS: Photomasks, Line width roughness, Semiconducting wafers, Metrology, Stochastic processes, Scanning electron microscopy, Critical dimension metrology, Data modeling, Linear filtering, Extreme ultraviolet lithography

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In order to meet the tight Line Width Roughness (LWR) requirements for advanced metrology nodes, it is critical to be able to identify what the fundamental sources of roughness are, so that they can be individually minimized. In fact, more and more efforts aiming to decouple mask and / or metrology contribution from wafer data have been recently reported [1]. However, these approaches often rely heavily on extensive mask characterization, something that is not always easily available.

We propose here an alternative path to investigate and discriminate the root causes of LWR using only wafer data. It is based on Local Critical Dimension Uniformity (LCDU) decomposition [2], a methodology used to identify and quantify the individual LCDU contributors. The decomposition approach requires a smart sampling of the wafer print, in which an array of contact hole is measured in different dies multiple times. For such an approach to be successful, it is critical to ensure that the measurement locations are individually identified. Hence, it is necessary to anchor the metrology to a reference feature. A linear nested model [3] is then used to quantify the three main variability components (mask, shot noise, and metrology). This approach allows to sample thousands of features at mask, a task that would not be practically achievable through direct mask measurements.

In this work, LWR decomposition is implemented for the first time. To this aim, 18nm lines at 36nm pitch, printed by EUV lithography, were used. We specifically worked with a pattern including programmed defects, used as anchoring features for the metrology. In order to limit the impact of the metrology noise, expected to be higher for lines as compared to CH, we sampled over 8000 anchored measurements per image (in the CH case, only 81 measurements per image were needed). The LWR decomposition results indicated the dominance of the metrology noise, as expected. In addition, the mask contribution was observed to be less relevant that the shot noise.

To verify the accuracy of the LWR decomposition results, Power Spectral Density (PSD) analysis on wafer and mask SEM images was used. The metrology noise contribution was removed at both mask and wafer level using an un-biasing normalization of the PSD curves [4]. The comparison with the PSD analysis confirmed the feasibility of LWR decomposition, opening the way to a more effective diagnostic technique for roughness and stochastics.

Proceedings Article | 3 October 2018 Presentation + Paper

Optimization and stability of CD variability in pitch 40 nm contact holes on NXE:3300

Lieve Van Look , Joost Bekaert, Andreas Frommhold, Eric Hendrickx, Gijsbert Rispens, Guido Schiffelers

Proceedings Volume 10809, 108090M (2018) https://doi.org/10.1117/12.2501797

KEYWORDS: Semiconducting wafers, Photomasks, Critical dimension metrology, Scanners, Stochastic processes, Scanning electron microscopy, Mirrors, Metrology, Extreme ultraviolet lithography

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Proceedings Article | 3 October 2018 Presentation + Paper

NXE:3400B imaging performance assessed from a customer perspective

Friso Wittebrood, Guido Schiffelers, Colette Legein

Proceedings Volume 10809, 1080905 (2018) https://doi.org/10.1117/12.2503343

KEYWORDS: Metals, Optical lithography, Extreme ultraviolet lithography, Logic, Photomasks, Scanners, Double patterning technology, High volume manufacturing, Source mask optimization, Semiconducting wafers

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SPIE Journal Paper | 17 September 2018

EUV vote-taking lithography for mitigation of printing mask defects, CDU improvement, and stochastic failure reduction

Joost Bekaert, Peter De Bisschop, Christophe Beral, Eric Hendrickx, Mark A. van de Kerkhof, Sander Bouten, Michiel Kupers, Guido Schiffelers, Erik Verduijn, Timothy A. Brunner

JM3, Vol. 17, Issue 04, 041013, (September 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.041013

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, Extreme ultraviolet, Stochastic processes, Lithography, Printing, Pellicles, Scanning electron microscopy, Extreme ultraviolet lithography

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Proceedings Article | 21 March 2018 Presentation + Paper

Single exposure EUV of 32nm pitch logic structures: patterning performance on BF and DF masks

V. Blanco Carballo, J. Bekaert, J. H. Franke, R. H. Kim, E. Hendrickx, L. E. Tan, W. Gillijns, Y. Drissi, M. Mao, G. McIntyre, M. Dusa, M. Kupers, D. Rio, G. Schiffelers, E. De Poortere, J. Jia, S. Hsu, M. Demand, K. Nafus, S. Biesemans

Proceedings Volume 10583, 105830L (2018) https://doi.org/10.1117/12.2299639

KEYWORDS: Etching, Tin, SRAF, Optical lithography, Logic, Extreme ultraviolet, Photomasks, Stochastic processes, Scanning electron microscopy, Photoresist processing

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Proceedings Article | 19 March 2018 Presentation + Paper

EUV vote-taking lithography: crazy... or not?

Joost Bekaert, Peter De Bisschop, Christophe Beral, Eric Hendrickx, Mark van de Kerkhof, Sander Bouten, Michiel Kupers, Guido Schiffelers, Erik Verduijn, Timothy Brunner

Proceedings Volume 10583, 105830I (2018) https://doi.org/10.1117/12.2299509

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Stochastic processes, Pellicles, Extreme ultraviolet, Scanning electron microscopy, Inspection, Extreme ultraviolet lithography, Lithography

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Proceedings Article | 18 March 2016 Paper

Assist features: placement, impact, and relevance for EUV imaging

Iacopo Mochi, Vicky Philipsen, Emily Gallagher, Eric Hendrickx, Kateryna Lyakhova, Friso Wittebrood, Guido Schiffelers, Timon Fliervoet, Shibing Wang, Stephen Hsu, Vince Plachecki, Stan Baron, Bart Laenens

Proceedings Volume 9776, 97761S (2016) https://doi.org/10.1117/12.2220025

KEYWORDS: Neodymium, Photomasks, Semiconducting wafers, Extreme ultraviolet, Image processing, Lithography, Lithographic illumination, Extreme ultraviolet lithography, Optical proximity correction, Atrial fibrillation, Reticles, Printing, Deep ultraviolet

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Proceedings Article | 4 September 2015 Paper

Understanding of Out-of-Band DUV light in EUV lithography: controlling impact on imaging and mitigation strategies

N. Davydova, R. Kottumakulal, J. Hageman, J. McNamara, R. Hoefnagels, V. Vaenkatesan, A. van Dijk, K. Ricken, L. de Winter, R. de Kruif, R. Jonckheere, T. Hollink, G. Schiffelers, E. van Setten, P. Colsters, W. Liebregts, R. Pellens, J. van Dijk

Proceedings Volume 9661, 96610B (2015) https://doi.org/10.1117/12.2195733

KEYWORDS: Aluminum, Deep ultraviolet, Reflectivity, Reticles, Semiconducting wafers, Scanners, Extreme ultraviolet, Extreme ultraviolet lithography, Coating, Reflection

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EUV sources emit a broad band DUV Out-of-Band (OOB) light, in particular, in the wavelength range 100-400 nm. This can cause additional exposure of EUV resists made that are based on a ArF/KrF resist platform. This DUV light is partially suppressed while travelling through the optical path but a non-negligible part of it reaches wafer level and impacts imaging.

This is important for imaging at the edges of an image field when fields are printed very close to each other on the wafer (so-called butted fields, with zero field to field spacing). DUV light is reflected from the reticle black border (BB) into a neighboring exposure field on the wafer. This results in a CD change at the edges and in the corners of the fields and therefore has an impact on CD uniformity. Experimental CDU results are shown for 16 nm dense lines (DL) and 20 nm isolated spaces (IS) (N7 logic design features) in the fields exposed at 0 mm and 0.5mm distance on the wafer. Areas close to the edge of the image field are important for customer applications as they often contain qualification and monitoring structures; in addition, limited imaging capabilities in this area may result in loss of usable wafer space.

In order to understand and control OOB DUV light, it must be measured in the scanner. DUV measurements are performed in resist using a special OOB reticle coated with Aluminum (Al) having low EUV reflectance and high DUV reflectance. A model for DUV light impact on the imaging is proposed and verified. For this, DUV reflectance data is collected in the wavelengths range 100-400 nm for Al and BB and the ratio of reflectances of these materials is determined for assumed scanner and resist OOB spectra. Also direct BB OOB test is performed on the wafer and compared to Al OOB results. The sensitivity of 16 nm DL and 20 nm IS to OOB light is experimentally determined by means of double exposure test: a wafer with exposed imaging structures undergoes a second flood exposure from a DUV reflective material (Al or BB).

Finally, several OOB mitigation strategies are discussed, in particular, suppression of DUV light in the scanner (~3x improvement), recent successes of DUV suppression for 16 nm imaging resist (~1.8x improvement) and DUV reflectance mitigation in the reticle black border (~3.8x). An overview of OOB test results for multiple NXE systems will be shown including systems with new NXE:3350 optics with improved OOB suppression.

Proceedings Article | 17 October 2014 Paper

Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond

Natalia Davydova, Eelco van Setten, Robert de Kruif, Brid Connolly, Norihito Fukugami, Yutaka Kodera, Hiroaki Morimoto, Yo Sakata, Jun Kotani, Shinpei Kondo, Tomohiro Imoto, Haiko Rolff, Albrecht Ullrich, Ramasubramanian Kottumakulal Jaganatharaja, Ad Lammers, Dorothe Oorschot, Cheuk-Wah Man, Guido Schiffelers, Joep van Dijk

Proceedings Volume 9231, 923102 (2014) https://doi.org/10.1117/12.2066299

KEYWORDS: Deep ultraviolet, Reflectivity, Extreme ultraviolet, Photomasks, Reticles, Scanners, Aluminum, Extreme ultraviolet lithography, Atomic force microscopy, Semiconducting wafers

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Proceedings Article | 17 October 2014 Paper

Imaging performance and challenges of 10nm and 7nm logic nodes with 0.33 NA EUV

Eelco van Setten, Guido Schiffelers, Eleni Psara, Dorothe Oorschot, Natalia Davydova, Jo Finders, Laurent Depre, Vincent Farys

Proceedings Volume 9231, 923108 (2014) https://doi.org/10.1117/12.2065945

KEYWORDS: Logic, Optical proximity correction, Photomasks, Extreme ultraviolet, Semiconducting wafers, Optical lithography, Calibration, Extreme ultraviolet lithography, Critical dimension metrology, Image resolution

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Proceedings Article | 28 July 2014 Paper

Achievements and challenges of EUV mask imaging

Proceedings Volume 9256, 925602 (2014) https://doi.org/10.1117/12.2072945

KEYWORDS: Reticles, Photomasks, Extreme ultraviolet, Semiconducting wafers, Reflectivity, 3D metrology, Deep ultraviolet, Neodymium, Atomic force microscopy, Scanners

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Proceedings Article | 17 April 2014 Paper

EUV lithography: NXE platform performance overview

Rudy Peeters, Sjoerd Lok, Joerg Mallman, Martijn van Noordenburg, Noreen Harned, Peter Kuerz, Martin Lowisch, Eelco van Setten, Guido Schiffelers, Alberto Pirati, Judon Stoeldraijer, David Brandt, Nigel Farrar, Igor Fomenkov, Herman Boom, Hans Meiling, Ron Kool

Proceedings Volume 9048, 90481J (2014) https://doi.org/10.1117/12.2046909

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Extreme ultraviolet, Logic, Imaging systems, Scanners, Optical proximity correction, Metrology, Photomasks

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Proceedings Article | 1 October 2013 Paper

NXE:3300B platform: imaging applications for Logic and DRAM

Eelco van Setten, Guido Schiffelers, Cristina Toma, Jo Finders, Dorothe Oorschot, Joep van Dijk, Sjoerd Lok, Rudy Peeters

Proceedings Volume 8886, 888604 (2013) https://doi.org/10.1117/12.2030605

KEYWORDS: Semiconducting wafers, Logic, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Imaging systems, Lithography, Image resolution, Chemically amplified resists, Scanners

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With the third generation EUV scanner, the NXE:3300B, it is expected that customers will move into volume manufacturing of the devices and processes currently in development. The NXE:3300B has an NA of 0.33 and is positioned at a resolution of 22nm, which can be extended down to 18nm and below with off-axis illumination at full transmission. In this presentation we will demonstrate the imaging performance of the NXE:3300B EUV scanner. With the system operating for almost a year now, we will show the main achievements, and present latest status on system performance, with a focus on imaging of customer device applications. For this, a wide range of features have been evaluated for lithographic performance across the field and across wafer. CD performance for 22nm dense and isolated lines, 18nm and 16nm dense lines with off-axis illumination, 24nm contact holes, as well as performance of customer device structures for 10nm node will be discussed and benchmarked against the current ArF immersion capability. The benefits of EUV for critical customer applications will be discussed, showing excellent imaging results for 2D features and the extension capability to 13nm half pitch and beyond. This demonstrates the capability of EUV to bring the single exposure resolution limit well below what can be achieved with complex multi-patterning techniques on ArFi. The benefit of off-axis illumination usage for process window enhancement at challenging resolutions will be assessed. The influence of mask 3D induced best focus difference on the overlapping depth of focus will also be addressed and compared to current ArFi performance. Furthermore a budget verification will be presented showing CD and contrast budgets for a selection of lithographic features, such as 22nm dense and isolated LS. The contribution of the resist process and the mask will be discussed as well. Finally an outlook will be given to future NA 0.33 systems with improved subsystem performance and full pupil flexibility for off-axis illuminations.

Proceedings Article | 1 April 2013 Paper

ASML's NXE platform performance and volume introduction

Rudy Peeters, Sjoerd Lok, Erwin van Alphen, Noreen Harned, Peter Kuerz, Martin Lowisch, Henk Meijer, David Ockwell, Eelco van Setten, Guido Schiffelers, Jan-Willem van der Horst, Judon Stoeldraijer, Robert Kazinczi, Richard Droste, Hans Meiling, Ron Kool

Proceedings Volume 8679, 86791F (2013) https://doi.org/10.1117/12.2010932

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Scanners, Extreme ultraviolet, Overlay metrology, Image resolution, Mirrors, Lithography, Wafer-level optics

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Proceedings Article | 4 December 2008 Paper

Experimental proximity matching of ArF scanners

Joost Bekaert, L. Van Look, P. De Bisschop, J. Van de Kerkhove, G, Vandenberghe, K. Schreel, J. Menger, G. Schiffelers, E. Knols, H. van der Laan, R. Willekers

Proceedings Volume 7140, 714027 (2008) https://doi.org/10.1117/12.804670

KEYWORDS: Semiconducting wafers, Scanners, Reticles, Critical dimension metrology, Optical proximity correction, Optics manufacturing, Cadmium, Photomasks, Metrology, Electroluminescence

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Proceedings Article | 7 March 2008 Paper

Tool-to-tool optical proximity effect matching

L. Van Look, Joost Bekaert, Peter De Bisschop, Jeroen Van de Kerkhove, Geert Vandenberghe, Koen Schreel, Jasper Menger, Guido Schiffelers, Edwin Knols, Rob Willekers

Proceedings Volume 6924, 69241Q (2008) https://doi.org/10.1117/12.772598

KEYWORDS: Semiconducting wafers, Scanners, Reticles, Critical dimension metrology, Optical proximity correction, Optics manufacturing, Wafer-level optics, Cadmium, Photomasks, Solids

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