Dr. Scott D. Schuetter Profile

Dr. Scott D. Schuetter

Research Assistant at Univ of Wisconsin-Madison

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Author

Publications (9)

SPIE Journal Paper | 1 April 2007

Prediction of the velocity at which liquid separates from a moving contact line

Scott Schuetter, Timothy Shedd, Gregory Nellis

JM3, Vol. 6, Issue 02, 023003, (April 2007) https://doi.org/10.1117/12.10.1117/1.2727490

KEYWORDS: Liquids, Velocity measurements, Fluid dynamics, Capillaries, Image processing, Data modeling, Interfaces, Semiconducting wafers, Chromium, Microfluidics

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Proceedings Article | 20 October 2006 Paper

A model to predict the critical velocity for liquid loss from a receding meniscus

Timothy Shedd, Scott Schuetter, Gregory Nellis, Chris Van Peski

Proceedings Volume 6349, 634904 (2006) https://doi.org/10.1117/12.693286

KEYWORDS: Liquids, Immersion lithography, Interfaces, Data modeling, Solids, Semiconducting wafers, Fluid dynamics, Capillaries, Microfluidics, Semiconductors

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Proceedings Article | 21 June 2006 Paper

A correlation for predicting film-pulling velocity in immersion lithography

Scott Schuetter, Timothy Shedd, Keith Doxtator, Gregory Nellis, Chris Van Peski

Proceedings Volume 6281, 62810Q (2006) https://doi.org/10.1117/12.692706

KEYWORDS: Semiconducting wafers, Liquids, Immersion lithography, Wafer testing, Fluid dynamics, Image processing, Velocity measurements, Optical lithography, Capillaries, Interfaces

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Proceedings Article | 11 April 2006 Paper

Performance of a dry 193nm resist under wet conditions

Munirathna Padmanaban, Andrew Romano, Guanyang Lin, Simon Chiu, Allen Timko, Frank Houlihan, Dalil Rahman, S. Chakrapani, T. Kudo, Ralph Dammel, Karen Turnquest, Georgia Rich, Scott Schuetter, Timothy Shedd, Gregory Nellis

Proceedings Volume 6153, 615307 (2006) https://doi.org/10.1117/12.659392

KEYWORDS: Thin film coatings, Lithography, Polymers, Line edge roughness, Semiconducting wafers, Photoresist processing, Line width roughness, Immersion lithography, Photoresist materials, Fourier transforms

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SPIE Journal Paper | 1 April 2006

Measurements of the dynamic contact angle for conditions relevant to immersion lithography

Scott Schuetter, Timothy Shedd, Keith Doxtator, Gregory Nellis, Chris Van Peski, Andrew Grenville, Shang-Ho Lin, Dah-Chung Owe-Yang

JM3, Vol. 5, Issue 02, 023002, (April 2006) https://doi.org/10.1117/12.10.1117/1.2198540

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Proceedings Article | 21 March 2006 Paper

CFD analysis of the receding meniscus in immersion lithography

Mohamed El-Morsi, Scott Schuetter, Gregory Nellis, Chris Van Peski

Proceedings Volume 6154, 61544E (2006) https://doi.org/10.1117/12.657157

KEYWORDS: Semiconducting wafers, Liquids, Capillaries, Protactinium, Fluid dynamics, Immersion lithography, Data modeling, Computational fluid dynamics, Image processing, Microfluidics

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Proceedings Article | 15 March 2006 Paper

Experimental characterization of the receding meniscus under conditions associated with immersion lithography

Timothy Shedd, Scott Schuetter, Gregory Nellis, Chris Van Peski

Proceedings Volume 6154, 61540R (2006) https://doi.org/10.1117/12.658894

KEYWORDS: Liquids, Immersion lithography, Interfaces, Data modeling, Semiconducting wafers, Solids, Semiconductors, Fluid dynamics, Capillaries, Refractive index

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Proceedings Article | 6 December 2004 Paper

Analysis and control of template distortions in Step-and-Flash Imprint Lithography templates

Scott Schuetter, Gerald Dicks, Gregory Nellis, Roxann Engelstad

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569316

KEYWORDS: Nanoimprint lithography, Liquids, Fluid dynamics, Capillaries, Quartz, Absorption, Computational fluid dynamics, Computer simulations, Lithography, Silicon

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Nanoimprint lithography (NIL) was placed on the 2004 ITRS Roadmap, thus signifying its growing potential as a viable next-generation lithography technique. A particularly promising NIL technology is Step-and-Flash Imprint Lithography in which the pattern from a quartz template is transferred into a UV-curable silicon-rich monomer. The process of squeezing the monomer film during the imprint process produces significant flow-related pressures on the template which result in out-of-plane distortions (OPD). These OPD inherently produce in-plane distortions which compromise the quality of the resulting features. A single droplet imprint process, wherein a single puddle of monomer is used to cover the entire active area, suffers from throughput limitations due to the low imprint velocities that are required to control the flow-related pressures exerted on the template. In response to these limitations, recent research has focused on a multiple droplet imprint process wherein many droplets are dispensed and coalesce during the imprint process, resulting in lower flow-related pressures. In this paper, a numerical model is described that is capable of predicting both the pressures and the template distortions during a multiple droplet imprint process. The model consists of a finite element structural model of the template interfaced to a fluid-dynamic model of the flow through the gap; the distortion of the template affects the pressure applied on the template and vice versa, therefore a coupled, fluid-structure model is required. The pressure distribution during the imprint process is described by an analytical solution to the Reynolds equation that is modified to account for the coalescing process as well as the affects of absorption and surface tension. The modified solution is developed and verified through the use of computational fluid dynamic simulations. Results are described for a nominal set of conditions and a parametric study of the effect of droplet density is presented.

Proceedings Article | 20 May 2004 Paper

Controlling template response during imprint lithography

Scott Schuetter, Gerald Dicks, Greg Nellis, Roxann Engelstad, Edward Lovell, Brad Schulteis

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.546925

KEYWORDS: Lithography, Semiconducting wafers, Liquids, Fluid dynamics, Nanoimprint lithography, Performance modeling, Atmospheric modeling, Mechanics, Solids, Chemical elements

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Showing 5 of 9 publications

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