In this work, we introduce the novel resist of ZR13D for high-NA’s generation and report their patterning performance in both ADI and AEI which was compared to the reference resist of ZER02#04DM. Zeon resists have some challenges that LCDU and dose to size are still high and resolution and defectivity should be improved as well. The concreate approaches in order to improve the challenges are that to make scission reaction efficient and to get developability more at exposed area higher in changing both monomers and functional groups. By both effects, Zeon aims to make clear threshold between exposed and un-exposed area and improve low contrast and sensitivity at tight patterns especially. Zeon has developed a new resist (ZR13D, R&D sample) in order to improve their challenges. ZR13D enabled to improve the contrast by EUV when compared to ZER02#04DM significantly. The litho-performance was able to be enhanced on both sensitivity and LCDU by breaking though RLS trade-off. And ZR13D could transfer patterns well in etching process, and then, holes with Zeon resists in AEI enabled to go through until the bottom of SiN substrate without residues. Additionally, ZR13D has maintained the stability of process delay from EUV expose to development process for stitching. It was clarified that ZR13D has the sufficient potential to be utilized at high-NA generation.
In this work, Zeon introduces the resolution with ZEP530A without PFAS restriction for dense L/S, iso-space and iso-line patterns on Si wafer by F7000S with VSB type in EB drawing equipment. Zeon examined litho-performance at dense L/S in changing 3 kinds of developers. The new developer of ZED-K90 (R&D sample) with lower both viscosity and solubility enabled to get lower roughness and enhance the resolution than those of ZED-N60 and N70 on LER although the dose to size was getting higher. There were some pinching defects on the patterns by ZED-N60 due to too strong solubility. On the other hand, ZED-N70 and K90 can be less on them due to the appropriate solubility. Next, litho-performance with ZEDK90 at iso-space and iso-line patterns was evaluated. The resolution was at design CD18nm in iso-line pattern and at design CD12nm in iso-space pattern and it was the best resolution among 3 developers. Additionally, the LER and SER with ZED-90 got lower than those with ZED-N70. It was clarified that the combination of ZEP530A and ZED-N90 had the sufficient potential to both enhance litho-performance including the resolution in EB resists and utilize them for EUV mask.
In this work, we introduce main chain scission resists with new concept for High-NA’s generation and report their lithography performance. Zeon has developed a new resist (ZR12A, R&D sample) in order to improve both resolution and lithography performance because conventional Zeon resists generated worse resolution and kissing(C/H), pinching(L/S) defects at tight pitch by top loss. The concreate approaches in order to improve the challenges are that to make scission reaction efficient and to get developability at exposed area higher in changing both monomers and functional groups. Zeon aims to make clear threshold between exposed and un-exposed area and improve low contrast and sensitivity at tight patterns especially. The lithography performance of ZR12A with their approaches were able to improve LCDU and margin with low LCDU on litho-performance compared to ZER02#04DM. Additionally, ZR12A has good etching resistance and can improve LCDU in AEI as well at this paper.
In this work, we introduce main chain scission resists with new concept for High-NA’s generation and report their lithography performance. Zeon has developed a new resist (ZER02#06M) in order to improve both resolution and lithography performance because conventional Zeon resists generated worse resolution and kissing(C/H), pinching(L/S) defects at tight pitch by top loss. The concreate approaches in order to improve the challenges are that to make scission reaction efficient and to get developability at exposed area higher in changing both monomers and functional groups. Zeon aims to make clear threshold between exposed and un-exposed area and improve low contrast and sensitivity at tight patterns especially. The lithography performance of ZER02#06M with their approaches were able to improve LCDU and margin with low LCDU on litho-performance compared to ZER02#04DM and ZER02#05M. Additionally, Zeon resists are indicated to have long-terms stability during litho-process with delay.
In this work, imec and Zeon introduce the resist with new concept and report the lithography performance. Zeon has developed a new resist (ZER02#05M) in order to improve both resolution and lithography performance because conventional Zeon resists generated worse resolution and kissing(C/H)/pinching(L/S) defects at tight pitch by top loss. The lithography performance at hexagonal contact hole (C/H) patterns with ZER02#05M is presented at ADI. For P40nm hexagonal C/H pattern in ADI by new resist, the lithography performance at CD17.5 nm in hole CD was achieved at the exposure dose of 92 mJ/cm2, giving a LCDU of 2.74 nm. It at CD18nm in P38nm hexagonal C/H pattern was resolved at 105 mJ/cm2, with a LCDU of 2.95 nm. t at CD18nm it at CD 17nm in P36nm hexagonal C/H pattern was resolved at 92 mJ/cm2, with a LCDU of 4.12 nm. Entire results with ZER02#05M could improve LCDU compared to ZER02#04DM, especially at larger CD. Additionally, patterning performance in AEI with 05 which did not optimize polymer properties could transfer patterns well and enhance LCDU compared to ZER02#04DM.
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