Mr. Tadashi Kitamura Profile

Tadashi Kitamura

at NGR Inc

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 1 April 2008 Paper

A new robust process window qualification (PWQ) technique to perform systematic defect characterization to enlarge the lithographic process window using a die-to-database verification tool (NGR2100)

Tadashi Kitamura, Toshiaki Hasebe, Kazufumi Kubota, Futoshi Sakai, Shinichi Nakazawa, Michael Hoffman, Masahiro Yamamoto, Masahiro Inoue

Proceedings Volume 6925, 692519 (2008) https://doi.org/10.1117/12.772706

KEYWORDS: Lithography, Inspection, Optical proximity correction, Defect detection, Bridges, Optical inspection, Scanning electron microscopy, Semiconducting wafers, Semiconductors, Design for manufacturability

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Proceedings Article | 24 March 2008 Paper

Systematic defect inspection and verification for distributions of critical dimension in OPC models utilizing design based metrology tool

Jeong-Geun Park, Sang-ho Lee, Young-Seog Kang, Young-Kyou Park, Tadashi Kitamura, Toshiaki Hasebe, Shinichi Nakazawa

Proceedings Volume 6922, 69222C (2008) https://doi.org/10.1117/12.772574

KEYWORDS: Coating, Carbon, Critical dimension metrology, Optical proximity correction, Scanning electron microscopy, Defect inspection, Tin, Semiconducting wafers, Metrology, Optical inspection

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Proceedings Article | 5 April 2007 Paper

Die-to-database verification tool for detecting CD errors, which are caused by OPC features, by using mass gate measurement and layout information

Tadashi Kitamura, Toshiaki Hasebe, Kazufumi Kubota, Futoshi Sakai, Shinichi Nakazawa, David Lin, Michael Hoffman, Masahiro Yamamoto, Masahiro Inoue

Proceedings Volume 6518, 651834 (2007) https://doi.org/10.1117/12.712413

KEYWORDS: Critical dimension metrology, Error analysis, Optical proximity correction, Statistical analysis, Inspection, Computer aided design, Optical design, Photomasks, Scanning electron microscopy, Semiconducting wafers

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Proceedings Article | 20 October 2006 Paper

Introduction of a die-to-database verification tool for mask geometry NGR4000

Michael Hoffman, Tadashi Kitamura, Kazufumi Kubota, Toshiaki Hasebe, Shinichi Nakazawa, Toshifumi Tokumoto, Masatoshi Tsuneoka, Masahiro Yamamoto, Masahiro Inoue

Proceedings Volume 6349, 634940 (2006) https://doi.org/10.1117/12.684984

KEYWORDS: Photomasks, Scanning electron microscopy, Critical dimension metrology, Distortion, Inspection, Metrology, Optical proximity correction, Optical inspection, Error analysis, Electron microscopes

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Proceedings Article | 23 March 2006 Paper

Defect inspection for imprint lithography using a die to database electron beam verification system

L. Jeff Myron, Ecron Thompson, Ian McMackin, Douglas Resnick, Tadashi Kitamura, Toshiaki Hasebe, Shinichi Nakazawa, Toshifumi Tokumoto, Eric Ainley, Kevin Nordquist, William Dauksher

Proceedings Volume 6151, 61510M (2006) https://doi.org/10.1117/12.659457

KEYWORDS: Inspection, Metals, Lithography, Silica, Logic, Semiconducting wafers, Defect detection, Photomasks, Chromium, Databases

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Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. Step and Flash Imprint Lithography (S-FIL^TM) is a unique method for printing sub-100nm geometries. Relative to other imprinting processes S-FIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. Further, S-FIL provides sub-100nm feature resolution without the significant expense of multielement, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates. With respect to inspection, although defects as small as 70nm have been detected using optical techniques, it is clear that it will be necessary to take advantage of the resolution capabilities of electron beam inspection techniques. This paper reports the first systematic study of die-to-database electron beam inspection of patterns that were imprinted using an Imprio 250 system. The die-to-database inspection of the wafers was performed on an NGR2100 inspection system. Ultimately, the most desirable solution is to directly inspect the fused silica template. This paper also reports the results on the first initial experiments of direct inspection fused silica substrates at data rates of 200 MHz. Three different experiments were performed. In the first study, large (350-400nm) Metal 1 and contact features were imprinted and inspected as described above. Using a 12 nm pixel address grid, 24 nm defects were readily detected. The second experiment examined imprinted Metal 1 and Logic patterns with dimensions as small as 70nm. Using a pixel address of 3nm, and a defect threshold of 20 nm, a systematic study of the patterned arrays identified problem areas in the design of the pattern layout. Finally, initial inspection of 200mm fused silica patterned substrates has established proof of concept for direct inspection of imprint templates.

Proceedings Article | 28 June 2005 Paper

Introduction of a die-to-database verification tool for the entire printed geometry of a die: geometry verification system NGR2100 for DFM

Tadashi Kitamura, Kazufumi Kubota, Toshiaki Hasebe, Futoshi Sakai, Shinichi Nakazawa, Neeti Vohra, Masahiro Yamamoto, Masahiro Inoue

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.620389

KEYWORDS: Computer aided design, Defect detection, Lithography, Semiconducting wafers, Edge detection, Design for manufacturing, Optical proximity correction, Critical dimension metrology, Photomasks, Inspection

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Proceedings Article | 5 May 2005 Paper

Introduction of a die-to-database verification tool for the entire printed geometry of a die: geometry verification system NGR2100 for DFM

Tadashi Kitamura, Kazufumi Kubota, Toshiaki Hasebe, Futoshi Sakai, Shinichi Nakazawa, Neeti Vohra, Masahiro Yamamoto, Masahiro Inoue

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.599467

KEYWORDS: Computer aided design, Defect detection, Lithography, Optical proximity correction, Edge detection, Design for manufacturing, Semiconducting wafers, Photomasks, Inspection, Critical dimension metrology

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Showing 5 of 7 publications

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