Mr. Tadahiko Takikawa Profile

Tadahiko Takikawa

at Dai Nippon Printing Co Ltd

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 8 November 2012 Paper

Electron beam inspection of 16nm HP node EUV masks

Takeya Shimomura, Shogo Narukawa, Tsukasa Abe, Tadahiko Takikawa, Naoya Hayashi, Fei Wang, Long Ma, Chia-Wen Lin, Yan Zhao, Chiyan Kuan, Jack Jau

Proceedings Volume 8522, 85220L (2012) https://doi.org/10.1117/12.976017

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect detection, Ruthenium, Extreme ultraviolet lithography, Semiconductors, Optical inspection, Reflectivity, Semiconducting wafers

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EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM). To fabricate and assure the defect free EUV masks, electron beam inspection (EBI) tool will be likely the necessary tool since optical mask inspection systems using 193nm and 199nm light are reaching a practical resolution limit around 16nm HP node EUV mask. For production use of EBI, several challenges and potential issues are expected. Firstly, required defect detection sensitivity is quite high. According to ITRS roadmap updated in 2011, the smallest defect size needed to detect is about 18nm for 15nm NAND Flash HP node EUV mask. Secondly, small pixel size is likely required to obtain the high sensitivity. Thus, it might damage Ru capped Mo/Si multilayer due to accumulated high density electron beam bombardments. It also has potential of elevation of nuisance defects and reduction of throughput. These challenges must be solved before inserting EBI system into EUV mask HVM line. In this paper, we share our initial inspection results for 16nm HP node EUV mask (64nm HP absorber pattern on the EUV mask) using an EBI system eXplore® 5400 developed by Hermes Microvision, Inc. (HMI). In particularly, defect detection sensitivity, inspectability and damage to EUV mask were assessed. As conclusions, we found that the EBI system has capability to capture 16nm defects on 64nm absorber pattern EUV mask, satisfying the sensitivity requirement of 15nm NAND Flash HP node EUV mask. Furthermore, we confirmed there is no significant damage to susceptible Ru capped Mo/Si multilayer. We also identified that low throughput and high nuisance defect rate are critical challenges needed to address for the 16nm HP node EUV mask inspection. The high nuisance defect rate could be generated by poor LWR and stitching errors during EB writing of 64nm HP resist pattern. This result suggests we need further improvements not only in the EBI inspection system but also the patterning processes for 16nm HP node EUV masks.

Proceedings Article | 30 June 2012 Paper

A novel mask proximity correction software combining accuracy and reduced writing time for the manufacturing of advanced photomasks

Patrick Schiavone, Luc Martin, Clyde Browning, Vincent Farys, Frank Sundermann, Shogo Narukawa, Tadahiko Takikawa, Naoya Hayashi

Proceedings Volume 8441, 84411F (2012) https://doi.org/10.1117/12.981609

KEYWORDS: Photomasks, Calibration, Modulation, Manufacturing, Data modeling, Ions, Extreme ultraviolet, Lithography, Scattering, Electroluminescence

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Proceedings Article | 16 April 2012 Paper

Mask readiness for EUVL pilot line

Naoya Hayashi, Tsukasa Abe, Tadahiko Takikawa

Proceedings Volume 8352, 835204 (2012) https://doi.org/10.1117/12.923125

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Line edge roughness, Manufacturing, Defect inspection, EUV optics, Printing, Lithography

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Proceedings Article | 7 April 2011 Paper

Demonstration of defect free EUV mask for 22nm NAND flash contact layer using electron beam inspection system

Takeya Shimomura, Satoshi Kawashima, Yuichi Inazuki, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi, Fei Wang, Long Eric Ma, Yan Zhao, Chiyan Kuan, Hong Xiao, Jack Jau

Proceedings Volume 7969, 79691B (2011) https://doi.org/10.1117/12.879565

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Defect detection, Lithography, Manufacturing, Particles, Electronic components, Opacity

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Proceedings Article | 2 April 2011 Paper

NGL masks: development status and issue

Naoya Hayashi, Tsukasa Abe, Takeya Shimomura, Yuichi Inazuki, Tadahiko Takikawa, Hiroshi Mohri

Proceedings Volume 7985, 798505 (2011) https://doi.org/10.1117/12.896886

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Defect inspection, EUV optics, Reflectivity, Optics manufacturing, Mask cleaning

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Proceedings Article | 25 September 2010 Paper

Native pattern defect inspection of EUV mask using advanced electron beam inspection system

Takeya Shimomura, Yuichi Inazuki, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi, Fei Wang, Long Ma, Yan Zhao, Chiyan Kuan, Hong Xiao, Jack Jau

Proceedings Volume 7823, 78232B (2010) https://doi.org/10.1117/12.868171

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect inspection, Bridges, Opacity, Defect detection, Scanning electron microscopy, Optical inspection, Extreme ultraviolet lithography

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Proceedings Article | 27 May 2010 Paper

Characterization of line-width roughness about 22-32nm node EUV mask

Yuichi Inazuki, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7748, 774821 (2010) https://doi.org/10.1117/12.867910

KEYWORDS: Line width roughness, Photomasks, Image segmentation, Scanning electron microscopy, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Standards development, Lithography, Image analysis

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Proceedings Article | 26 May 2010 Paper

CMP dummy pattern based on VSB writer load

Wakahiko Sakata, Isaku Osawa, Shogo Narukawa, Tadahiko Takikawa, Hiroshi Mohri

Proceedings Volume 7748, 77481M (2010) https://doi.org/10.1117/12.864104

KEYWORDS: Chemical mechanical planarization, Photomasks, Vestigial sideband modulation, Current controlled current source

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SPIE Journal Paper | 1 April 2010

Thin-absorber extreme-ultraviolet lithography mask with light-shield border for full-field scanner: flatness and image placement change through mask process

Takashi Kamo, Yuusuke Tanaka, Toshihiko Tanaka, Iwao Nishiyama, Osamu Suga, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Tsutomu Shoki, Youichi Usui

JM3, Vol. 9, Issue 02, 023005, (April 2010) https://doi.org/10.1117/12.10.1117/1.3378154

KEYWORDS: Photomasks, Etching, Extreme ultraviolet lithography, Image processing, Multilayers, Photoresist processing, Photovoltaics, Lithography, Extreme ultraviolet, Coating

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Proceedings Article | 11 December 2009 Paper

EUV mask pattern inspection with an advanced electron beam inspection system

Takeya Shimomura, Yuichi Inazuki, Abe Tsukasa, Tadahiko Takikawa, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi, Fei Wang, Long Ma, Yan Zhao, Chiyan Kuan, Hong Xiao, Jack Jau

Proceedings Volume 7520, 75201D (2009) https://doi.org/10.1117/12.837025

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Scanning electron microscopy, Defect detection, Opacity, Extreme ultraviolet lithography, Bridges, Silicon, Solids

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Proceedings Article | 30 September 2009 Paper

Thin absorber EUVL mask with light-shield border for full-field scanner: flatness and image placement change through mask process

Takashi Kamo, Yuusuke Tanaka, Toshihiko Tanaka, Osamu Suga, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Tsutomu Shoki, Youichi Usui

Proceedings Volume 7488, 748818 (2009) https://doi.org/10.1117/12.829873

KEYWORDS: Photomasks, Etching, Image processing, Extreme ultraviolet lithography, Multilayers, Photoresist processing, Scanners, Coating, Optical lithography, Lithography

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Proceedings Article | 11 May 2009 Paper

Study of CD variation at EUV mask fabrication occurred by electric conduction from top to back side

Kosuke Takai, Koji Murano, Kazuki Hagihara, Masamitsu Itoh, Tsukasa Abe, Takashi Adachi, Hideo Akizuki, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7379, 73792I (2009) https://doi.org/10.1117/12.824332

KEYWORDS: Photomasks, Extreme ultraviolet, Etching, Coating, Extreme ultraviolet lithography, Mask making, Conductive coatings, Critical dimension metrology, Photoresist processing, Ions

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Proceedings Article | 17 October 2008 Paper

EUVL practical mask structure with light shield area for 32nm half pitch and beyond

Takashi Kamo, Hajime Aoyama, Toshihiko Tanaka, Osamu Suga, Tsukasa Abe, Tadahiko Takikawa, Naoya Hayashi, Tsutomu Shoki, Youichi Usui, Morio Hosoya

Proceedings Volume 7122, 712227 (2008) https://doi.org/10.1117/12.801576

KEYWORDS: Photomasks, Etching, Reflectivity, Extreme ultraviolet lithography, Multilayers, Photoresist processing, Coating, Extreme ultraviolet, Lawrencium, Lithography

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Proceedings Article | 3 April 2008 Paper

Particle-free mask handling techniques and a dual-pod carrier

Mitsuaki Amemiya, Kazuya Ota, Takao Taguchi, Takashi Kamono, Youichi Usui, Tadahiko Takikawa, Osamu Suga

Proceedings Volume 6921, 69213T (2008) https://doi.org/10.1117/12.771569

KEYWORDS: Particles, Photomasks, Extreme ultraviolet lithography, Inspection, Error analysis, Particle contamination, Reticles, Protactinium, Pellicles, Absorption

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Proceedings Article | 21 March 2008 Paper

Experimental evaluation of out-of-plane distortion of electrostatically chucked EUV reticle

Kazuya Ota, Takao Taguchi, Mitsuaki Amemiya, Yasushi Nishiyama, Takashi Kamono, Naosuke Nishimura, Tadahiko Takikawa, Youichi Usui, Osamu Suga

Proceedings Volume 6921, 69213S (2008) https://doi.org/10.1117/12.771339

KEYWORDS: Reticles, Particles, Carbon, Extreme ultraviolet, Quartz, Distortion, Silicon carbide, Interferometers, Photovoltaics, Semiconducting wafers

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Proceedings Article | 15 May 2007 Paper

Hybrid EB-writing technique with a 50 kV-VSB writer and a 100 kV-SB writer for nanoimprint mold fabrication

Mikio Ishikawa, Masashi Sakaki, Naoko Kuwahara, Hiroshi Fujita, Tadahiko Takikawa, Hisatake Sano, Morihisa Hoga, Naoya Hayashi

Proceedings Volume 6607, 66073I (2007) https://doi.org/10.1117/12.729045

KEYWORDS: Double patterning technology, Nanoimprint lithography, Photomasks, Neodymium, Optical alignment, Chromium, Nanolithography, Fabrication, Scanning electron microscopy, Quartz

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Proceedings Article | 15 May 2007 Paper

Development of a novel EUV mask protection engineering tool and mask handling techniques

Mitsuaki Amemiya, Kazuya Ota, Takashi Kamono, Hiroyoshi Kubo, Youichi Usui, Tadahiko Takikawa, Takao Taguchi, Osamu Suga

Proceedings Volume 6607, 66073G (2007) https://doi.org/10.1117/12.729035

KEYWORDS: Particles, Photomasks, Pellicles, Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Atmospheric particles, Contamination, Quartz, Protactinium

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Proceedings Article | 20 March 2007 Paper

Development of EUV mask handling technology at MIRAI-Selete

Kazuya Ota, Mitsuaki Amemiya, Takao Taguchi, Takashi Kamono, Hiroyoshi Kubo, Tadahiko Takikawa, Yoichi Usui, Osamu Suga

Proceedings Volume 6517, 65171Z (2007) https://doi.org/10.1117/12.711317

KEYWORDS: Photomasks, Particles, Extreme ultraviolet, Inspection, Pellicles, Interferometers, Defect detection, Time metrology, Laser applications, Manufacturing

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Proceedings Article | 9 November 2005 Paper

Image placement accuracy of single-membrane stencil masks for e-beam lithography

Minoru Kitada, Satoshi Yusa, Naoko Kuwahara, Hiroshi Fujita, Tadahiko Takikawa, Hisatake Sano, Morihisa Hoga

Proceedings Volume 5992, 59924R (2005) https://doi.org/10.1117/12.630114

KEYWORDS: Photomasks, Data corrections, Distortion, Silicon, Electron beam lithography, Metrology, Mask making, Data modeling, Semiconducting wafers, Printing

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Proceedings Article | 6 December 2004 Paper

CD-measurement technique for hole patterns on stencil mask

Mikio Ishikawa, Satoshi Yusa, Tadahiko Takikawa, Hiroshi Fujita, Hisatake Sano, Morihisa Hoga, Naoya Hayashi

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.575371

KEYWORDS: Photomasks, Semiconducting wafers, Scanning electron microscopy, Critical dimension metrology, Charged-particle lithography, Optical lithography, Lithography, Silicon, Holons, Printing

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Proceedings Article | 20 May 2004 Paper

200-mm EPL stencil mask fabrication and metrology at DNP: IP and CD accuracy within subfield

Tadahiko Takikawa, Mikio Ishikawa, Satoshi Yusa, Yoshinori Kinase, Hiroshi Fujita, Morihisa Hoga, Naoya Hayashi, Hisatake Sano

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535108

KEYWORDS: Photomasks, Metrology, Distortion, Mask making, Electron beam lithography, Image quality, Electron beams, Projection lithography, Lithography, Optical lithography

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Proceedings Article | 25 August 1999 Paper

Primary evaluation of proximity and resist heating effects observed in high-acceleration voltage e-beam writing for 180-nm-and-beyond rule reticle fabrication

Naoko Kuwahara, H. Nakagawa, Masa-aki Kurihara, Naoya Hayashi, Hisatake Sano, E. Maruta, T. Takikawa, Shigeru Noguchi

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360208

KEYWORDS: Critical dimension metrology, Reticles, Monte Carlo methods, Photomasks, Scattering, Electron beam lithography, Spatial resolution, Scanning electron microscopy, Optical lithography, Modulation

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Showing 5 of 22 publications

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