ArF immersion technology has been used widely in volume production for 45nm node. For 32nm node and beyond,
double patterning technology with ArF immersion lithography is considered to be the main stream solution until EUV is
ready.
Our target is to reduce CoO(Cost of ownership) and we aim to develop for ecology and high durability laser. We will
introduce the latest performance data of the laser built for ArF immersion lithography under the EcoPhoton concept.
Eco-photon concept:
-CoC (Cost of Consumable)
-CoD (Cost of Downtime)
-CoE(Cost of Energy & Environment)
We have developed flexible and high power injection-lock ArF excimer laser for double patterning, GT62A-1SxE
(Max90W/6000Hz/Flexible power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform5). A number of
innovative and unique technologies are implemented on GT62A-1SxE. In addition, GT62A-1SxE is the laser matching
the enhancement technology of advanced illumination systems. For example, in order to provide illumination power
optimum for resist sensitivity, it has extendable power from 60W to 90W.
We have confirmed durability under these concept with the regulated operation condition with flexible power 60-90W.
We show the high durability data of GT62A-1SxE with Eco-Photon concept. In addition to the results the field reliability
and availability of our Giga Twin series (GT6XA). We also show technologies which made these performances and its
actual data. A number of innovative and unique technologies are implemented on GT62A.
ArF immersion technology is spotlighted as the enabling technology for the 45nm node and beyond. Recently, double
exposure technology is also considered as a possible candidate for the 32nm node and beyond. We have already released
an injection lock ArF excimer laser, the GT61A (60W/6kHz/10mJ/0.30pm) with ultra line-narrowed spectrum and
stabilized spectrum performance for immersion lithography tools with N.A.>1.3, and we have been monitoring the field
reliability data of our lasers used in the ArF immersion segment since Q4 2006.
In this report we show field reliability data of our GigaTwin series - twin chamber ArF laser products. GigaTwin series
have high reliability. The availability that exceeds 99.5% proves the reliability of the GigaTwin series.
We have developed tunable and high power injection-lock ArF excimer laser for double patterning, GT62A
(Max90W/6000Hz/Tunable power with 10-15mJ/0.30pm (E95)) based on the GigaTwin platform. A number of
innovative and unique technologies are implemented on GT62A.
- Support the latest illumination optical system
- Support E95 stability and adjustability
- Reduce total cost (Cost of Consumables, Cost of Downtime and Cost of Energy & Environment)
ArF immersion technology is spotlighted as the enabling technology for the 45nm node and beyond. Recently, double
exposure technology is also considered as a possible candidate for the 32nm node and beyond. We have already released
an injection lock ArF excimer laser, the GT61A (60W/6kHz/10mJ/0.35pm) with ultra line-narrowed spectrum and
stabilized spectrum performance for immersion lithography tools with N.A.>1.3, and we have been monitoring the field
reliability data of our lasers used in the ArF immersion segment since Q4 2006. We show GT series reliability data in the
field. GT series have high reliability performance. The availability that exceeds 99.5% proves the reliability of the GT
series. We have developed high power injection lock ArF excimer laser for double patterning, the GT62A
(90W/6000Hz/15mJ/0.35pm(E95)) based on the GigaTwin (GT) platform. Number of innovative and unique
technologies are implemented on GT62A in order to reduce running cost of laser. We have introduced unique technology
to enable 40 billion pulse lifetime of laser chambers to drastically reduce running cost. In addition, we have improved
lifetime of Line Narrowing Module significantly by changing optical path. Furthermore, the extension of gas refill
intervals was achieved by introducing new gas supply module and sophisticated gas control algorithm. We achieved the
reduction of operation cost and down time by introducing these three technologies.
ArF immersion technology is spotlighted as the enabling technology for below 45nm node. Recently, double exposure
technology is also considered for below 32nm node. We have already released an injection lock ArF excimer laser with
ultra-line narrowed and stabilized spectrum performance: GT61A (60W/6kHz/ 10mJ/0.35pm) to ArF immersion market
in Q4 2006. The requirements are: i) higher power ii) lower cost of downtime for higher throughput iii) greater
wavelength stability for improved overlay and iv) increased lifetimes for lower operation costs.
We have developed high power and high energy stability injection lock ArF excimer laser for double patterning: GT62A
(90W/6000Hz/15mJ/0.35pm) based on the technology of GT61A and the reliability of GigaTwin (GT) platform. A high
power operation of 90W is realized by development of high durability optical elements. Durability of the new optics is at
least 3 times as long as that of the conventional optics used in the GT61A. The energy stability is improved more than
1.5 times of performance in the GT61A by optimizing laser operational conditions of the power oscillator. This
improvement is accomplished by extracting potential efficiency of injection lock characteristic. The lifetime of power
oscillator, which is one of the major parts in cost of ownership, is maintained by using higher output of the power supply.
The Argon Fluoride (ArF) immersion lithography is now shifting to mass production phase for below 45nm node. For a
laser light source in this node, narrower and more stable spectrum performance is required. We have introduced GT61A
ArF laser light source (60W/6kHz/10mJ/0.35pm) with spectrum E95 stabilization system which meets these
requirements. The narrow and stabilized spectrum performance was achieved by developing an ultra line narrowing
module and Bandwidth Control Module (BCM). It contributes to the reduction of differences of the spectrum during
exposure over a wafer, wafer to wafer, during machine lifetime and machine to machine for every light source. Stable
laser performance is obtained for mass production. The GT61A integrated on a common and already reliability-proven
GigaTwin (GT) platform, and its inherited reliability is proved with the availability over 99.5% in the field.
The GT61A ArF laser light source with ultra line narrowed spectrum, which meets the demand of hyper NA (NA > 1.3)
immersion tool, is introduced. The GT61A aims at improving spectrum performance from value E95 0.5pm of GT60A.
The spectrum performance 0.3pm or less was achieved by developing an ultra line narrowing module newly.
Moreover, in 45nm node, since it indispensably requires OPC (optical proximity correction) and a narrower process
window, improved stabilization of spectrum performances was performed by bandwidth control technology. Newly
designed Bandwidth Control Module (BCM) includes high accuracy measurement module which support the narrower
bandwidth range and active bandwidth control module. It also contributes to the reduction of the tool-to-tool differences
of the spectrum for every light source.
Hakaru Mizoguchi, T. Inoue, J. Fujimoto, T. Suzuki, T. Matsunaga, S. Sakanishi, M. Kaminishi, Y. Watanabe, T. Nakaike, M. Shinbori, M. Yoshino, T. Kawasuji, H. Nogawa, H. Umeda, H. Taniguchi, Y. Sasaki, J. Kinoshita, T. Abe, H. Tanaka, H. Hayashi, K. Miyao, M. Niwano, A. Kurosu, M. Yashiro, H. Nagano, T. Igarashi, T. Mimura, K. Kakizaki
KEYWORDS: Molybdenum, Lithography, High power lasers, Optical lithography, Oscillators, Laser applications, Laser systems engineering, Light sources, Control systems, Laser development
The 193-nm lithography is moving from the pre-production to the mass production phase and its target node is shifting from 90 nm to 65 nm. And the ArF-immersion (Wet) technology is spotlighted as the enabling technology for below 45nm node1)2). Since 1998 we have demonstrated 30W, 0.12pm, @157nm line narrowed light source for microlithography with "Injection lock technology". The injection lock technology has advanced performances compared with MOPA (Master Oscillator Power Amplifier) technology, in efficiency, stability and spectral property. Based on this injection lock technology, we have successfully developed high power injection lock laser platform "GigaTwin" for 193nm lithography system GT40A (45W, 4000Hz, 11.25mJ) on Q4 20043)4). We have found solution for higher repetition rate up to 6kHz operation on the same platform as GT40A which is our original innovation named GT60A (Figure 1). In this paper, we will introduce this new GT60A (6kHz 60W) laser.
H. Mizoguchi, T. Inoue, J. Fujimoto, T. Yamazaki, T. Suzuki, T. Matsunaga, S. Sakanishi, M. Kaminishi, Y. Watanabe, T. Ohta, M. Nakane, M. Moriya, T. Nakaike, M. Shinbori, M. Yoshino, T. Kawasuji, H. Nogawa, T. Ito, H. Umeda, S. Tanaka, H. Taniguchi, Y. Sasaki, J. Kinoshita, T. Abe, H. Tanaka, H. Hayashi, K. Miyao, M. Niwano, A. Kurosu, M. Yashiro, H. Nagano, N. Matsui, T. Mimura, K. Kakizaki, M. Goto
KEYWORDS: Molybdenum, Lithography, High power lasers, Optical lithography, 193nm lithography, Control systems, Light sources, Optical components, Oscillators, Laser development
193-nm lithography is moving from the pre-production to the mass production phase and its target node is
shifting from 90 nm to 65 nm. And now the ArF-immersion technology is spotlighted as the enabling technology
for below 45nm node1). 157nm lithography is still important for next generation node below 45 nm as backup
technology2).
Gigaphoton has already released G40A (20W, 0.35pm) in 2001, G41A (20W, 0.30pm)3) in 2002, G42A (20W,
0.25pm)4) in 2003 to the advanced lithography market. On the other hand, since 1998 we have been developing
high power 157nm light source for micro lithography with injection lock technology in research phase5)6). We
have demonstrated a 30W, 0.12pm, @157nm line narrowed light source for microlithography with
"Injection lock technology"1)2). Based on this injection lock technology, we have successfully developed
"GigaTwin", a high power injection lock laser platform for 193nm lithography system. We have already
released a high power ultra narrowed ArF laser "GT40A" (45W, 4000Hz, 11.25mJ, 0.18pm), with the GigaTwin
platform.
ArF excimer lasers are the light source of choice for the next generation of micro-lithographic tools enabling structures below the 130nm technology node. For these lithographic mass production lines Komatsu successfully developed an ArF excimer laser, named G20A, which has a 2kHz pulse repetition rate, 10W average power and 0.5pm (FWHM) spectral bandwidth. G20A has three significantly improved important items: (1) the high resolution line narrowing module, (2) the high power and high repetition rate solid state pulse power module, and (3) the Xe added laser gas yielding an improved overall laser performance. ArF laser spectra were determined with out newly developed high-resolution spectrometer. The instrument function of the spectrometer was measured with a 193nm coherent light source jointly developed with the University of Tokyo. The laser gas composition is one key parameter of excimer laser performance. The deteriorating effect of impurities on ArF performance is e.g. ten times larger than on KrF performance. We observed that added Xe gas, however, has a beneficial effect on the pulse energy and the energy stability at high repetition rates. Experimental results of a currently developed 4 kHz ArF laser are also reported.
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