Mr. Masashi Fujimoto Profile

Masashi Fujimoto

at DNP Fine Electronics Sagamihara Co Ltd

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 31 October 2007 Paper

OPC development in action for advanced technology nodes

Anthony Chunqing Wang, Masashi Fujimoto, Paul van Adrichem, Ingo Bork, Hiroshi Yamashita

Proceedings Volume 6730, 673059 (2007) https://doi.org/10.1117/12.746838

KEYWORDS: Calibration, Optical proximity correction, Process modeling, Metrology, Data modeling, Scanning electron microscopy, Mathematical modeling, Edge roughness, Lithography, Statistical modeling

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Proceedings Article | 24 July 2002 Paper

Importance of resist transparency and development rate control in via-first dual damascene processes

Seiji Nagahara, Masashi Fujimoto, Mitsuharu Yamana, Takeo Hashimoto

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474259

KEYWORDS: Transparency, Etching, Photoresist processing, Dielectrics, Scanning electron microscopy, Absorbance, Optical lithography, Polymers, Lithography, Copper

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Proceedings Article | 14 September 2001 Paper

Multiple-focus exposure in strong phase-shift lithography: improvement of CD-focus characteristics and CD controllability

Masashi Fujimoto, Tadao Yasuzato

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435768

KEYWORDS: Photomasks, Critical dimension metrology, Lithography, Scanners, Semiconducting wafers, Monochromatic aberrations, Electroluminescence, Binary data, Control systems, Inspection

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Proceedings Article | 5 July 2000 Paper

Depth-of-focus enhancement of isolated lines by multiple-focus exposure with negative-tone resist process

Masashi Fujimoto, Tamio Yamazaki, Takeo Hashimoto

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388946

KEYWORDS: Critical dimension metrology, Photoresist processing, Photomasks, Semiconducting wafers, Scanners, Lithography, Image resolution, Cadmium, Image processing, Imaging systems

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Proceedings Article | 29 June 1998 Paper

Effect of stage synchronization error of KrF scan on 0.18-um patterning

Takayuki Uchiyama, Takeo Hashimoto, Masashi Fujimoto, Seiji Matsuura, Tamio Yamazaki, Kunihiko Kasama

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310802

KEYWORDS: Critical dimension metrology, Optical lithography, Tolerancing, Reticles, Scanners, Excimer lasers, Distortion, Chemical analysis, Image resolution, Error analysis

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Proceedings Article | 7 July 1997 Paper

DOF enhancement of isolated line patterns by newly developed assistant pattern method

Seiji Matsuura, Takeo Hashimoto, Takayuki Uchiyama, Masashi Fujimoto, Kunihiko Kasama

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275967

KEYWORDS: Opacity, Excimers

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Proceedings Article | 7 July 1997 Paper

Comparison between optical proximity effect of positive and negative tone patterns in KrF lithography

Masashi Fujimoto, Takeo Hashimoto, Takayuki Uchiyama, Seiji Matsuura, Kunihiko Kasama

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275991

KEYWORDS: Lithography, Critical dimension metrology, Resolution enhancement technologies, Optical lithography, Lithographic illumination, Photomasks

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Proceedings Article | 9 June 1995 Paper

Optimization of dissolution-rate characteristics of chemically amplified positive resist

Toshiro Itani, Haruo Iwasaki, Hiroshi Yoshino, Masashi Fujimoto, Kunihiko Kasama

Proceedings Volume 2438, (1995) https://doi.org/10.1117/12.210399

KEYWORDS: Diffusion, Optical lithography, Lithography, Deep ultraviolet, Polymers, Scanning electron microscopy, Photography, Chemical analysis, Photoresist processing, Excimer lasers

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The dissolution kinetics of a 3-component chemically amplified DUV positive resist (base resin; t-BOC protected polyhydroxystyrene, PAG; benzenesulfonic acid derivative, dissolution inhibitor; t-BOC protected bisphenol A;) was investigated under various conditions. Particularly, the effects of the dissolution inhibitor on the dissolution rate characteristics together with the effect of the t-BOC protection ratio of the base resin were studied. Moreover, in order to obtain ideal dissolution characteristics, a resist profile simulation analysis was carried out. The dissolution rate contrast as well as the slope N of log(dissolution rate)-log(exposure dose) plots increased with increasing inhibitor concentrations. However, a very high inhibitor concentration induced a severe standing wave effect and T-topping profile, resulting in the deterioration of resist performance. Therefore, it was discovered that inhibitor concentration has an optimum value in this resist system. These results are similar to those of t-BOC protection ratio in base resin. According to resist simulation, the slope N was closely related to resist performance, but the dissolution rate contrast was not. A slope value of more than 15 was necessary for 0.25 micrometers patterning (focus margin > 1.3 micrometers ). In addition, the acid diffusion length was one of the key factors: suitable diffusion length was essential for achieving a good resist profile; short diffusion length induces a severe standing wave profile and a long diffusion length deteriorates resolution capability. Based on the analysis of the dissolution characteristics and resist profile simulation, it was concluded that the optimization of the base resin structure and inhibitor concentration is effective for modifying the dissolution parameter. Moreover, it was also found that a steep slope (> 15), moderate dissolution contrast (approximately 10,000) and adequate acid diffusion length (approximately 35) can bring about ideal dissolution characteristics leading to 0.25 micrometers pattern formation.

Proceedings Article | 16 May 1994 Paper

Dissolution characteristics optimization for chemically amplified positive resist

Toshiro Itani, Haruo Iwasaki, Masashi Fujimoto, Kunihiko Kasama

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175330

KEYWORDS: Lithography, Photoresist processing, Polymers, Chemical analysis, Temperature metrology, Excimer lasers, Absorption, Polymerization, Catalysis, Deep ultraviolet

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Proceedings Article | 16 May 1994 Paper

Acid size effect of chemically amplified negative resist on lithographic performance

Haruo Iwasaki, Toshiro Itani, Masashi Fujimoto, Kunihiko Kasama

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175333

KEYWORDS: Lithography, Carbon, Diffusion, Excimer lasers, Absorption, Chemically amplified resists, Catalysis, Scanning electron microscopy, Deep ultraviolet, Chemical species

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Proceedings Article | 1 November 1991 Paper

Growth of PbTiO3 films by photo-MOCVD

Masaru Shimizu, Takuma Katayama, Masashi Fujimoto, Tadashi Shiosaki

Proceedings Volume 1519, (1991) https://doi.org/10.1117/12.47305

KEYWORDS: Metalorganic chemical vapor deposition, NOx, Crystals, Ultraviolet radiation, Dielectrics, Thin films, Silicon, Lead, Oxygen, Perovskite

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Showing 5 of 11 publications

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