Dr. Ingo Bork Profile

Dr. Ingo Bork

Product Director MPC at Siemens EDA

SPIE Involvement:

Conference Program Committee | Author

Publications (42)

Proceedings Article | 21 November 2023 Poster + Paper

Efficient representation of full mask density maps in advanced mask data preparation flows

Rachit Sharma, Ingo Bork, Archana Rajagopalan, Kushlendra Mishra, Mary Zuo

Proceedings Volume 12751, 127511C (2023) https://doi.org/10.1117/12.2687511

KEYWORDS: Photomasks, Nomenclature, Industry, Visualization, Portability, Metrology, Lithography, Design and modelling, Data storage, Data processing

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Proceedings Article | 21 November 2023 Poster + Paper

A simulation-based methodology to analyze the impact of edge-length on curvilinear mask accuracy

Kushlendra Mishra, Rachit Sharma, Ingo Bork, Mary Zuo, Christof Zillner

Proceedings Volume 12751, 127511E (2023) https://doi.org/10.1117/12.2687760

KEYWORDS: Electron beam lithography, Photomasks, Process modeling, Lithography, Printing, Error analysis

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Proceedings Article | 21 November 2023 Presentation + Paper

Opportunities, challenges, and applications of native curvilinear data representation in post-tape-out flows

Bhardwaj Durvasula, Sayalee Gharat, Ranganadh Peesapati, Rachit Sharma, Ingo Bork, Stephen Kim, Archana Rajagopalan

Proceedings Volume 12751, 1275107 (2023) https://doi.org/10.1117/12.2687645

KEYWORDS: Optical proximity correction, Lithography, Algorithm development, Photomasks, Industry

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Proceedings Article | 21 November 2023 Poster + Paper

A study of applying mask process correction to constant width curvilinear SRAFs

Mary Zuo, Kushlendra Mishra, Rachit Sharma, Ingo Bork, Nassima Zeggaoui

Proceedings Volume 12751, 127511F (2023) https://doi.org/10.1117/12.2687892

KEYWORDS: SRAF, Optical proximity correction, Bias correction, Printing, Semiconducting wafers, Histograms, Model-based design, Design and modelling, Manufacturing, Industry

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Proceedings Article | 21 November 2023 Presentation + Paper

Integration of e-beam mask writer corrections in MPC applications

Archana Rajagopalan, Ingo Bork, Rachit Sharma, Malavika Sharma, Bhardwaj Durvasula, Kushlendra Mishra, Mary Zuo

Proceedings Volume 12751, 127510Y (2023) https://doi.org/10.1117/12.2688502

KEYWORDS: Modulation, Scattering, SRAF, Photomask technology, Backscatter, Photomasks, Manufacturing, Forward error correction, Extreme ultraviolet, Etching

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Critical Dimension Uniformity (CDU) of photomasks written with 50 kV e-beam writers is very sensitive to scattering and mask process effects such as etch loading. The interaction distances of those effects vary by about 6 orders of magnitude and range from around 10 nm to around 10 mm. With the introduction of 50 kV e-beam writers, tool manufacturers also developed methods for compensating the most significant scattering effects, namely backscattering, often called PEC for Proximity Effect Correction and fogging (also called FEC for Fogging Effect Correction). E-beam writers, including the most advanced multi-beam writers, use local dose modulation of the exposure dose as described in [1]-[3] to compensate for those longer-range scattering effects. This method works reasonably well for older technology nodes but starts to be a limiting factor for most advanced EUV masks which have to meet very high CDU specifications. The reason is that the Critical Dimension (CD) response to dose is not constant across different mask shapes. For example, very small features like sub-resolution assist features (SRAFs) have a higher ΔCD/ΔDose response than larger features, since smaller features have a more gradual image edge slope. So far it has not been reported in the literature that Mask Process Correction (MPC) applications take the e-beam writer corrections into account when correcting for shorter-range non-linearity effects. Ref. [4] describes an attempt to combine forward and backscatter compensation as an off-tool MPC application where all corrections seem to be achieved via dose modulation. This paper describes a method for integrating the e-beam writer dose modulation into the MPC engine, so that the actual exposure dose at any given location on the mask is taken into account when applying shape based, short-range MPC. With this extension of MPC, a fully consistent short- and long-range correction is possible, even when the actual long-range corrections are applied on the e-beam writer and not directly during the offline MPC step.

Proceedings Article | 1 December 2022 Presentation + Paper

Benefits of SEM field-of-view contour averaging for contour-based MPC modeling

Kushlendra Mishra, Rachit Sharma, Ingo Bork, Zhiheng (Mary) Zuo, Mark Pereira, Samir Bhamidipati, Seshadri Rampoori

Proceedings Volume 12293, 122930H (2022) https://doi.org/10.1117/12.2641833

KEYWORDS: Calibration, Scanning electron microscopy, Photomasks, Statistical modeling, Signal to noise ratio, Metrology, Image quality, Data modeling, Critical dimension metrology

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Proceedings Article | 1 December 2022 Presentation + Paper

A method for calibrating a curvature-based pre-bias model for advanced mask process correction applications

Rachit Sharma, Mary Zuo, Ingo Bork, Archana Rajagopalan, Malavika Sharma, Kushlendra Mishra

Proceedings Volume 12293, 1229309 (2022) https://doi.org/10.1117/12.2641760

KEYWORDS: Calibration, Photomasks, Process modeling, Optimization (mathematics), Model-based design, Manufacturing, Lithography, Source mask optimization

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Proceedings Article | 1 December 2022 Presentation + Paper

Mask process correction for laser writers

Ingo Bork, Kushlendra Mishra, Samarpita Mukherjee, Rachit Sharma, Mary Zuo

Proceedings Volume 12293, 122930J (2022) https://doi.org/10.1117/12.2641990

KEYWORDS: Photomasks, Critical dimension metrology, Error analysis, Calibration, Etching, Data modeling, Laser processing, Printing

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Proceedings Article | 1 December 2022 Presentation + Paper

A neural network assisted etch model for mask process correction

Zhiheng (Mary) Zuo, Rachit Sharma, Ingo Bork, Kushlendra Mishra

Proceedings Volume 12293, 122930I (2022) https://doi.org/10.1117/12.2641834

KEYWORDS: Data modeling, Neural networks, Etching, Calibration, Process modeling, Critical dimension metrology, Statistical modeling, Optical proximity correction

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Proceedings Article | 1 November 2022 Paper

Curvilinear mask process correction: status quo and outlook

Peter Buck, Kushlendra Mishra, Rachit Sharma, Mary Zuo, Ingo Bork

Proceedings Volume 12472, 124720S (2022) https://doi.org/10.1117/12.2640001

KEYWORDS: Photomasks, Calibration, SRAF, Manufacturing, Optical proximity correction, Scanning electron microscopy, Process modeling, Scattering

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SPIE Journal Paper | 1 November 2021 Open Access

Study on various curvilinear data representations and their impact on mask and wafer manufacturing

Jin Choi, Soo Ryu, Sukho Lee, Minah Kim, JoonSoo Park, Peter Buck, Ingo Bork, Bhardwaj Durvasula, Sayalee Gharat, Nageswara Rao, Ravi Pai, Sandeep Koranne, Alexander Tritchkov

JM3, Vol. 20, Issue 04, 041403, (November 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.041403

KEYWORDS: Photomasks, Tolerancing, Optical proximity correction, Semiconducting wafers, Manufacturing, Extreme ultraviolet, Vestigial sideband modulation, Extreme ultraviolet lithography, Scanning electron microscopy, Lithography

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Proceedings Article | 22 October 2021 Presentation + Paper

Curvature based fragmentation for curvilinear mask process correction

Ingo Bork, Peter Buck, Bhardwaj Durvasula, Vlad Liubich, Nageswara Rao, Rachit Sharma, Mary Zuo

Proceedings Volume 11855, 118550R (2021) https://doi.org/10.1117/12.2601032

KEYWORDS: Photomasks, SRAF, Optical proximity correction, Semiconducting wafers, Solids, Image segmentation, Data corrections, Data processing, Tolerancing, Lithography

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Proceedings Article | 12 October 2021 Presentation + Paper

Sensitivity analysis based SEM measurement down-sampling approach for mask process modeling applications

Kushlendra Mishra, Dongeun Cha, Seungheon Na, Rachit Sharma, Ingo Bork, Peter Buck, Jaekwang Kim, Kiwook Park, Inpyo Kim

Proceedings Volume 11855, 118550Z (2021) https://doi.org/10.1117/12.2600926

KEYWORDS: Data modeling, Calibration, Photomasks, Process modeling, Statistical modeling, Scanning electron microscopy, Metrology, Critical dimension metrology, Error analysis

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Proceedings Article | 12 October 2021 Presentation + Paper

Using curvature-based pre-bias to reduce number of iterations in curvilinear mask process correction

Zhiheng (Mary) Zuo, Malavika Sharma, Ingo Bork, Bhardwaj Durvasula, Peter Buck

Proceedings Volume 11855, 118550Q (2021) https://doi.org/10.1117/12.2600959

KEYWORDS: Computational lithography, Photomasks, Optical proximity correction, Process modeling, Model-based design, Manufacturing

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Proceedings Article | 22 February 2021 Presentation + Paper

Curvilinear data format working group for MBMW era

Jin Choi, Ingo Bork, Soo Ryu, Minah Kim, JoonSoo Park, Buck Peter, Sukho Lee, Bhardwaj Durvasula, Sayalee Gharat, Nageswara Rao

Proceedings Volume 11610, 116100S (2021) https://doi.org/10.1117/12.2587109

KEYWORDS: Optical proximity correction, Mask making, Electronic design automation

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Proceedings Article | 15 October 2020 Presentation + Paper

MRC for curvilinear mask shapes

Ingo Bork, Alexander Tritchkov, Shumay Shang, Evgueni Levine, Mary Zuo

Proceedings Volume 11518, 115180R (2020) https://doi.org/10.1117/12.2575474

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Proceedings Article | 16 October 2019 Presentation + Paper

Creating nonideality: enabling cross-platform process matching solutions with MPC (and a lot of hard work)

Charles Whiting, Jed Rankin, Daniel Hill, Matthew Leuthold, Michaela Wentz, Adam Smith, Ingo Bork, Peter Buck, Robin Chia, Bharadwaj Durvasula, Gazi Huda, Ken Jantzen, Jianliang Li, Joerg Mellmann, Kushlendra Mishra, Nageswara Rao, Malavika Sharma, Rachit Sharma

Proceedings Volume 11148, 1114805 (2019) https://doi.org/10.1117/12.2538347

KEYWORDS: Photomasks, Data modeling, Optical proximity correction, Critical dimension metrology, Calibration, Lithography, Semiconducting wafers, Manufacturing, Opacity, Etching

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Proceedings Article | 3 October 2019 Paper

Machine learning guided curvilinear MPC

Malavika Sharma, Bhardwaj Durvasula, Nageswara Rao, Ingo Bork, Rachit Sharma, Kushlendra Mishra, Peter Buck

Proceedings Volume 11148, 111480Q (2019) https://doi.org/10.1117/12.2538646

KEYWORDS: Photomasks, Machine learning, Optical proximity correction, Computational lithography, Data modeling, Lithography, Neural networks, Waveguides, Vestigial sideband modulation, Data processing

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Proceedings Article | 26 September 2019 Paper

Resist-slope aware modeling for mask process correction applications

Rachit Sharma, Ingo Bork, Kushlendra Mishra, Linna Cong, Mingjing Tian, Malavika Sharma, Bhardwaj Durvasula, Nageswara Rao, Peter Buck, ShiZhi Lyu

Proceedings Volume 11148, 111480G (2019) https://doi.org/10.1117/12.2536529

KEYWORDS: Process modeling, Photomasks, Etching, Critical dimension metrology, Calibration, Semiconductor manufacturing, Control systems, Model-based design, Scattering, Photoresist processing

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Proceedings Article | 29 August 2019 Paper

MPC strategies for multi-beam mask writers

Ingo Bork, Peter Buck

Proceedings Volume 11177, 1117707 (2019) https://doi.org/10.1117/12.2535375

KEYWORDS: Electron beam lithography, Mask making, Photomasks

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The benefit of complex and curvilinear mask shapes as well as the demand for fast mask production cycles has been driving the development of Multi-Beam Mask Writers (MBMW) for several years. Meanwhile, those writers have reached a quality level where they can be integrated into mask production flows at various nodes and even be used for writing imprint lithography templates at wafer scale. 50 keV e-beam writers whether Multi-Beam or Variable Shaped Beam (VSB), are affected by scattering effects at various length scales and require significant corrections in order to print mask features on target. Correction methods for long-range effects such as PEC (Proximity Effect Correction) and FEC (Fogging Effect Correction) have been developed for VSB machines and can be applied to MBMWs in the same way. Similarly, long-range mask process effects like loading (LEC) can be corrected using the same methods as developed for VSB machines. Besides long-range scattering and etch effects, critical masks for the 14 nm technology node and below are affected by short-range scattering and etch effects like e-beam forward scattering and etch micro-loading. Those effects increase at length scales below several 100 nm and change printed CDs significantly at minimum feature sizes on DUV and EUV masks where SRAFs are targeted around 60 nm and 30 nm, respectively. Figure 1 (left) shows an example of a typical mask CD error signature where the range of CD errors from small, isolated features to large nested features can easily cover 15 nm or more. Those short range distortions are generally corrected using so called Mask-Process-Correction (MPC) tools which compensate mask errors by moving edges of the input design and optionally adjust the dose of printed features locally. Simulated mask contours before and after MPC are shown in Figure 1 (center, right) demonstrating the large effect of MPC on SRAFs but also the non-negligible effect on main feature CDs, especially on line-ends and narrow lines.

Proceedings Article | 12 November 2018 Presentation + Paper

Mask process correction validation for multi-beam mask lithography

Ingo Bork, Peter Buck, Bhardwaj Durvasula, Stefan Eder-Kapl, Peter Hudek, Elmar Platzgummer, Rao Nageswara, Murali Reddy, Christoph Spengler, Jan Klikovits, Jed Rankin, Christian Bürgel, Michal Jurkovic

Proceedings Volume 10810, 108100K (2018) https://doi.org/10.1117/12.2503284

KEYWORDS: Photomasks, SRAF, Calibration, Cadmium, Lithography, Double patterning technology, Data modeling, Etching, Vestigial sideband modulation, Scanning electron microscopy

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Proceedings Article | 22 October 2018 Presentation + Paper

Lithographic benefits and mask manufacturability study of curvilinear masks

Alexander Wei, Vivian Wei Guo, Fan Jiang, Jed Rankin, Alexander Tritchkov, Yuyang Sun, Srividya Jayaram, Larry Zhuang, Ingo Bork, Todd Bailey, James Word, Xima Zhang

Proceedings Volume 10810, 108100P (2018) https://doi.org/10.1117/12.2501973

KEYWORDS: Photomasks, SRAF, Printing, Lithography, Vestigial sideband modulation, Semiconducting wafers, Optical proximity correction, Manufacturing, Image quality, Image processing

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Proceedings Article | 3 October 2018 Presentation + Paper

Advanced jog handling techniques in MPC for better QoR

Steffen Schulze, Peter Buck, Bhardwaj Durvasula, Ingo Bork, Archana Rajagopalan, Nageswara Rao, Murali Reddy

Proceedings Volume 10810, 108100M (2018) https://doi.org/10.1117/12.2503550

KEYWORDS: Optical proximity correction, Metals, Error analysis, Vestigial sideband modulation, Visualization, Data corrections, Beam shaping, Process modeling, Image quality, Computer simulations

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Proceedings Article | 31 October 2017 Presentation + Paper

CLMPC: curvilinear MPC in a mask data preparation flow

Malavika Sharma, Ingo Bork, Bhardwaj Durvasula, Nageswara Rao, Peter Buck, Murali Reddy

Proceedings Volume 10451, 1045109 (2017) https://doi.org/10.1117/12.2282502

KEYWORDS: Photomasks, Optical proximity correction, Model-based design, Semiconducting wafers, Data modeling, Lithography, Calibration, Electron beam lithography, Mask making

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Proceedings Article | 16 October 2017 Paper

Mask process correction method comparison and study: CD-SEM box versus standard correction method

Mingjing Tian, Shizhi Lyu, Peter Buck, Eric Guo, Ingo Bork, Yifan Li, Delin Mo, Cong Lu, Kushlendra Mishra, Anil Parchuri

Proceedings Volume 10451, 104511T (2017) https://doi.org/10.1117/12.2280280

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Proceedings Article | 28 September 2017 Paper

The role of model-based MPC in advanced mask manufacturing

Ingo Bork, Peter Buck

Proceedings Volume 10446, 104460B (2017) https://doi.org/10.1117/12.2281894

KEYWORDS: Photomasks, Optical proximity correction, Manufacturing, Model-based design, Extreme ultraviolet, SRAF, Lithography, Calibration, Optical calibration

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SPIE Journal Paper | 27 April 2016

Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond

Nacer Zine El Abidine, Frank Sundermann, Emek Yesilada, Vincent Farys, Frederic Huguennet, Ana-Maria Armeanu, Ingo Bork, Michael Chomat, Peter Buck, Isabelle Schanen

JM3, Vol. 15, Issue 02, 021011, (April 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021011

KEYWORDS: Photomasks, Calibration, Optical proximity correction, Critical dimension metrology, Electroluminescence, Wafer-level optics, Semiconducting wafers, Data modeling, 3D modeling, Scanning electron microscopy

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Proceedings Article | 23 October 2015 Paper

Accurate mask model implementation in OPC model for 14nm nodes and beyond

Isabelle Schanen, Michael Chomat, Nacer Zine El Abidine, Frank Sundermann, Emek Yesilada, Frederic Huguennet, Ingo Bork, Peter Buck, Ana-Maria Armeanu, Vincent Farys

Proceedings Volume 9635, 96350W (2015) https://doi.org/10.1117/12.2203267

KEYWORDS: Photomasks, Calibration, Critical dimension metrology, Semiconducting wafers, Optical proximity correction, Wafer-level optics, Process modeling, Data modeling, Photoresist processing, Neck

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Proceedings Article | 23 October 2015 Paper

A fully model-based MPC solution including VSB shot dose assignment and shape correction

Bhardwaj Durvasula, Ingo Bork, Peter Buck, Murali Reddy

Proceedings Volume 9635, 96350U (2015) https://doi.org/10.1117/12.2199157

KEYWORDS: Model-based design, Modulation, Backscatter, SRAF, Photomask technology, Optimization (mathematics), Calibration, Photomasks, Diffusion, Visualization

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Proceedings Article | 17 October 2014 Paper

Using rule-based shot dose assignment in model-based MPC applications

Ingo Bork, Peter Buck, Lin Wang, Uwe Müller

Proceedings Volume 9235, 92351T (2014) https://doi.org/10.1117/12.2069677

KEYWORDS: Critical dimension metrology, Vestigial sideband modulation, Model-based design, SRAF, Visualization, Cadmium, Distance measurement, Backscatter, Optical proximity correction

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Shrinking feature sizes and the need for tighter CD (Critical Dimension) control require the introduction of new technologies in mask making processes. One of those methods is the dose assignment of individual shots on VSB (Variable Shaped Beam) mask writers to compensate CD non-linearity effects and improve dose edge slope. Using increased dose levels only for most critical features, generally only for the smallest CDs on a mask, the change in mask write time is minimal while the increase in image quality can be significant. This paper describes a method combining rule-based shot dose assignment with model-based shot size correction. This combination proves to be very efficient in correcting mask linearity errors while also improving dose edge slope of small features. Shot dose assignment is based on tables assigning certain dose levels to a range of feature sizes. The dose to feature size assignment is derived from mask measurements in such a way that shape corrections are kept to a minimum. For example, if a 50nm drawn line on mask results in a 45nm chrome line using nominal dose, a dose level is chosen which is closest to getting the line back on target. Since CD non-linearity is different for lines, line-ends and contacts, different tables are generated for the different shape categories. The actual dose assignment is done via DRC rules in a pre-processing step before executing the shape correction in the MPC engine. Dose assignment to line ends can be restricted to critical line/space dimensions since it might not be required for all line ends. In addition, adding dose assignment to a wide range of line ends might increase shot count which is undesirable. The dose assignment algorithm is very flexible and can be adjusted based on the type of layer and the best balance between accuracy and shot count. These methods can be optimized for the number of dose levels available for specific mask writers. The MPC engine now needs to be able to handle different dose levels and requires a model which accurately predicts mask shapes at all dose levels used. The calibration of such a model is described in a separate paper [1]. In summary this paper presents an efficient method for combining rule-based VSB shot dose assignment with modelbased shape corrections in MPC. This method expands the printability of small features sizes without the need for increasing the base dose of the e-beam writer which reduces backscattering and increases the lifetime of the electron gun of the writer.

Proceedings Article | 8 October 2014 Paper

Mask model calibration for MPC applications utilizing shot dose assignment

Ingo Bork, Peter Buck, Sankaranarayanan Paninjath, Kushlendra Mishra, Christian Bürgel, Gek Soon Chua, Keith Standiford

Proceedings Volume 9235, 92350A (2014) https://doi.org/10.1117/12.2069617

KEYWORDS: Calibration, Critical dimension metrology, Scanning electron microscopy, Cadmium, Etching, Error analysis, Visualization, Photomasks, Vestigial sideband modulation, Statistical modeling

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Shrinking feature sizes and the need for tighter CD (Critical Dimension) control require the introduction of new technologies in mask making processes. One of those methods is the dose assignment of individual shots on VSB (Variable Shaped Beam) mask writers to compensate CD non-linearity effects and improve dose edge slope. Using increased dose levels only for most critical features, generally only for the smallest CDs on a mask, the change in mask write time is minimal while the increase in image quality can be significant. However, this technology requires accurate modeling of the mask effects, especially the CD/dose dependencies. This paper describes a mask model calibration flow for Mask Process Correction (MPC) applications with shot dose assignment. The first step in the calibration flow is the selection of appropriate test structures. For this work, a combination of linespace patterns as well as a series of contact patterns are used for calibration. Features sizes vary from 34 nm up to several micrometers in order to capture a wide range of CDs and pattern densities. After mask measurements are completed the results are carefully analyzed and measurements very close to the process window limitation and outliers are removed from the data set. One key finding in this study is that by including patterns exposed at various dose levels the simulated contours of the calibrated model very well match the SEM contours even if the calibration was based entirely on gauge based CD values. In the calibration example shown in this paper, only 1D line and space measurements as well as 1D contact measurements are used for calibration. However, those measurements include patterns exposed at dose levels between 75% and 150% of the nominal dose. The best model achieved in this study uses 2 e-beam kernels and 4 kernels for the simulation of development and etch effects. The model error RMS on a large range of CD down to 34 nm line CD is 0.71 nm. The calibrated model is then used to generate 2D contours for line ends, space ends and contacts and those contours are compared to SEM images. For all patterns, including those very close to the resolution limit, very good contour overlay is achieved. It appears that by including the various dose levels in the calibration a very good separation of the e-beam model components from the etch components is possible and that this also results in very accurate 2D model quality. In conclusion, very accurate mask model calibration is achieved for mask processes using shot dose assignment. Standard test patterns can be used for calibration if they include the dose variations intended for correction.

Proceedings Article | 28 July 2014 Paper

Accurate mask model for advanced nodes

Nacer Zine El Abidine, El Hadji Omar Ndiaye, Kushlendra Mishra, Sankaranarayanan Paninjath, Frank Sundermann, Emek Yesilada, Peter Buck, Ingo Bork, Olivier Toublan, Isabelle Schanen

Proceedings Volume 9256, 925603 (2014) https://doi.org/10.1117/12.2069977

KEYWORDS: Photomasks, Calibration, Data modeling, Optical proximity correction, Etching, Error analysis, Printing, Electron beam lithography, Scanning electron microscopy, Semiconducting wafers

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Proceedings Article | 8 November 2012 Paper

Improving CD uniformity using MB-MDP for 14nm node and beyond

Anthony Adamov, Bob Pack, Chan Jeon, Jin Choi, Ingo Bork, Byung Kim, Sterling Watson, Jisoong Park

Proceedings Volume 8522, 852205 (2012) https://doi.org/10.1117/12.966327

KEYWORDS: Photomasks, Semiconducting wafers, Monte Carlo methods, Data modeling, Critical dimension metrology, Backscatter, Model-based design, Modulation, SRAF, Lithography

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Proceedings Article | 8 November 2012 Paper

An enhanced measure of mask quality using separated models

Bob Pack, Byung-Gook Kim, Ingo Bork, Kazuyuki Hagiwara, Jissong Park, Jin Choi, Anthony Adamov

Proceedings Volume 8522, 852207 (2012) https://doi.org/10.1117/12.964379

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Monte Carlo methods, Quality measurement, Lithography, Optical proximity correction, Model-based design, Error analysis, Data modeling

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Proceedings Article | 14 October 2011 Paper

Optimization of mask shot count using MB-MDP and lithography simulation

Gek Soon Chua, Byoung IL Choi, Tam Nguyen, Ingo Bork, Yi Zou, Aki Fujimura, Wei Long Wang, Cyrus Tabery

Proceedings Volume 8166, 816632 (2011) https://doi.org/10.1117/12.897037

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Photovoltaics, Data modeling, Semiconducting wafers, SRAF, Source mask optimization, Vestigial sideband modulation, Model-based design

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Proceedings Article | 19 May 2011 Paper

Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction

Kazuyuki Hagiwara, Aki Fujimura, Ingo Bork

Proceedings Volume 8081, 80810U (2011) https://doi.org/10.1117/12.898862

KEYWORDS: Photomasks, Semiconducting wafers, Data modeling, Extreme ultraviolet, Vestigial sideband modulation, SRAF, Model-based design, Logic, Manufacturing, Optical proximity correction

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Proceedings Article | 4 April 2011 Paper

Model-based mask data preparation (MB-MDP) and its impact on resist heating

Aki Fujimura, Takashi Kamikubo, Ingo Bork

Proceedings Volume 7970, 797012 (2011) https://doi.org/10.1117/12.883122

KEYWORDS: Photomasks, Data modeling, Model-based design, Vestigial sideband modulation, Logic, Optical proximity correction, Forward error correction, Cadmium sulfide, Thermal effects, Semiconducting wafers

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Proceedings Article | 23 March 2011 Paper

Mask data correction methodology in the context of model-based fracturing and advanced mask models

Larry Chau, Christophe Pierrat, Ingo Bork

Proceedings Volume 7973, 79732J (2011) https://doi.org/10.1117/12.881550

KEYWORDS: Photomasks, Data modeling, Model-based design, Scattering, Electrons, Etching, Mask making, Data corrections, Lithography, Neodymium

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Proceedings Article | 29 September 2010 Paper

Impact of model-based fracturing on e-beam proximity effect correction methodology

Ingo Bork, Christophe Pierrat

Proceedings Volume 7823, 782313 (2010) https://doi.org/10.1117/12.864126

KEYWORDS: Scattering, Model-based design, Photomasks, Ions, Process modeling, Backscatter, Neodymium, Acquisition tracking and pointing, Convolution, Data modeling

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Proceedings Article | 25 September 2010 Paper

Improvement of mask write time for curvilinear assist features at 22nm

Daisuke Hara, Tadashi Komagata, Kazuyuki Hagiwara, Yasutoshi Nakagawa, Aki Fujimura, Taiichi Kiuchi, Ingo Bork

Proceedings Volume 7823, 782307 (2010) https://doi.org/10.1117/12.864094

KEYWORDS: Photomasks, SRAF, Semiconducting wafers, Scanning electron microscopy, Vestigial sideband modulation, Printing, Data modeling, Manufacturing, Error analysis, System on a chip

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Proceedings Article | 25 September 2010 Paper

Writing 32nm-hp contacts with curvilinear assist features

David Kim, Christophe Pierrat, Aki Fujimura, Ingo Bork

Proceedings Volume 7823, 78230R (2010) https://doi.org/10.1117/12.864184

KEYWORDS: Photomasks, SRAF, Semiconducting wafers, Vestigial sideband modulation, Lithography, Scanning electron microscopy, Printing, Beam shaping, Optical proximity correction, Line edge roughness

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Proceedings Article | 31 October 2007 Paper

OPC development in action for advanced technology nodes

Paul van Adrichem, Masashi Fujimoto, Ingo Bork, Hiroshi Yamashita, Anthony Chunqing Wang

Proceedings Volume 6730, 673059 (2007) https://doi.org/10.1117/12.746838

KEYWORDS: Calibration, Optical proximity correction, Process modeling, Metrology, Data modeling, Scanning electron microscopy, Mathematical modeling, Edge roughness, Lithography, Statistical modeling

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Showing 5 of 42 publications

Conference Committee Involvement (2)

Photomask Technology 2024

29 September 2024 | Monterey, California, United States

Photomask Technology 2023

2 October 2023 | Monterey, California, United States

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