Dr. Paul van Adrichem Profile

Dr. Paul van Adrichem

Mask Synthesis CAE Manager at ASML Netherlands BV

SPIE Involvement:

Author

Publications (46)

SPIE Journal Paper | 21 May 2021

Investigation into a prototype extreme ultraviolet low-n attenuated phase-shift mask

Claire van Lare, Frank Timmermans, Jo Finders, Olena Romanets, Cheuk-Wah Man, Paul van Adrichem, Yohei Ikebe, Takeshi Aizawa, Takahiro Onoue

JM3, Vol. 20, Issue 02, 021006, (May 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.021006

KEYWORDS: Photomasks, Printing, Reflectivity, Extreme ultraviolet, Prototyping, Electroluminescence, Diffraction, Stochastic processes, Image enhancement, SRAF

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Proceedings Article | 26 February 2021 Presentation + Paper

Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations

Adam Lyons, Luke Long, Tom Wallow, Chris Spence, Ton Kiers, Paul van Adrichem, Vidya Vaenkatesan, Jiyou Fu, Christoph Hennerkes, Cyrus Tabery

Proceedings Volume 11609, 116090C (2021) https://doi.org/10.1117/12.2584744

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Proceedings Article | 22 February 2021 Presentation

Investigation into a prototype EUV attenuated phase-shift mask

Claire van Lare, Frank Timmermans, Jo Finders, Olena Romanets, Cheuk-Wah Man, Paul van Adrichem, Yohei Ikebe, Takeshi Aizawa, Takahiro Onoue

Proceedings Volume 11609, 116090A (2021) https://doi.org/10.1117/12.2584725

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Proceedings Article | 22 February 2021 Presentation + Paper

Extending 0.33 NA EUVL to 28 nm pitch using alternative mask and controlled aberrations

D. Rio, P. Van Adrichem, M. Delorme, K. Lyakhova, C. Spence, J.-H. Franke

Proceedings Volume 11609, 116090T (2021) https://doi.org/10.1117/12.2583800

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Proceedings Article | 26 September 2019 Presentation + Paper

Improving exposure latitudes and aligning best focus through pitch by curing M3D phase effects with controlled aberrations

Joern-Holger Franke, Joost Bekaert, Victor Blanco, Lieve Van Look, Felix Wahlisch, Kateryna Lyakhova, Paul van Adrichem, Mark Maslow, Guido Schiffelers, Eric Hendrickx

Proceedings Volume 11147, 111470E (2019) https://doi.org/10.1117/12.2537104

KEYWORDS: Diffraction, Extreme ultraviolet lithography, Metals, Photomasks, Semiconducting wafers, Nanoimprint lithography, Optical proximity correction, Extreme ultraviolet, Phase modulation, Phase shift keying

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Proceedings Article | 27 June 2019 Paper

Evaluation of local CD and placement distribution on EUV mask and its impact on wafer

Vidya Vaenkatesan, Paul van Adrichem, Marleen Kooiman, Michael Kubis, Lieve van Look , Andreas Frommhold, Emily Gallagher, DS Nam, Jan Mulkens

Proceedings Volume 11178, 1117807 (2019) https://doi.org/10.1117/12.2538243

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Extreme ultraviolet, Stochastic processes

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Proceedings Article | 3 October 2018 Presentation + Paper

EUV pupil optimization for 32nm pitch logic structures

D. Rio, V. Blanco, J.-H. Franke, W. Gillijns, M. Dusa, E. De Poortere, P. Van Adrichem, K. Lyakhova, C. Spence, E. Hendrickx, S. Biesemans, K. Nafus

Proceedings Volume 10809, 108090N (2018) https://doi.org/10.1117/12.2503321

KEYWORDS: Source mask optimization, Semiconducting wafers, Scanners, Logic, Extreme ultraviolet lithography, Reticles, Extreme ultraviolet

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Proceedings Article | 26 October 2017 Paper

EUV source optimization driven by fundamental diffraction considerations

Jo Finders, Eelco van Setten, Par Broman, Erik Wang, John McNamara, Paul van Adrichem

Proceedings Volume 10450, 104500C (2017) https://doi.org/10.1117/12.2280717

KEYWORDS: Lithographic illumination, Source mask optimization, Diffraction, Photomasks, Extreme ultraviolet lithography, Immersion lithography, Fiber optic illuminators, Lithography, Optimization (mathematics)

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Proceedings Article | 28 April 2017 Presentation

CD-SEM metrology and OPC modeling for 2D patterning in advanced technology nodes (Conference Presentation)

Thomas Wallow, Chen Zhang, Anita Fumar-Pici, Jun Chen, Bart Laenens, Christopher Spence, David Rio, Paul van Adrichem, Harm Dillen, Jing Wang, Peng-Cheng Yang, Werner Gillijns, Patrick Jaenen, Frieda van Roey, Jeroen van de Kerkhove, Sergey Babin

Proceedings Volume 10145, 101451Q (2017) https://doi.org/10.1117/12.2260443

KEYWORDS: Metrology, Optical proximity correction, Data modeling, Optical lithography, Signal to noise ratio, OLE for process control, Instrument modeling, Image analysis, Calibration, Metals

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In the course of assessing OPC compact modeling capabilities and future requirements, we chose to investigate the interface between CD-SEM metrology methods and OPC modeling in some detail. Two linked observations motivated our study: 1) OPC modeling is, in principle, agnostic of metrology methods and best practice implementation. 2) Metrology teams across the industry use a wide variety of equipment, hardware settings, and image/data analysis methods to generate the large volumes of CD-SEM measurement data that are required for OPC in advanced technology nodes. Initial analyses led to the conclusion that many independent best practice metrology choices based on systematic study as well as accumulated institutional knowledge and experience can be reasonably made. Furthermore, these choices can result in substantial variations in measurement of otherwise identical model calibration and verification patterns. We will describe several experimental 2D test cases (i.e., metal, via/cut layers) that examine how systematic changes in metrology practice impact both the metrology data itself and the resulting full chip compact model behavior. Assessment of specific methodology choices will include: • CD-SEM hardware configurations and settings: these may range from SEM beam conditions (voltage, current, etc.,) to magnification, to frame integration optimizations that balance signal-to-noise vs. resist damage. • Image and measurement optimization: these may include choice of smoothing filters for noise suppression, threshold settings, etc. • Pattern measurement methodologies: these may include sampling strategies, CD- and contour- based approaches, and various strategies to optimize the measurement of complex 2D shapes. In addition, we will present conceptual frameworks and experimental methods that allow practitioners of OPC metrology to assess impacts of metrology best practice choices on model behavior. Finally, we will also assess requirements posed by node scaling on OPC model accuracy, and evaluate potential consequences for CD-SEM metrology capabilities and practices.

Proceedings Article | 24 March 2017 Presentation + Paper

N7 dark field two-bar in 0.33NA EUVL: Mitigation of CD Bossung tilts caused by strong coupling between the feature's primary and 1st self-image

T. Last, P. van Adrichem, L. de Winter, S. Hsu, J. Finders, F. Wittebrood, M. van de Kerkhof

Proceedings Volume 10143, 1014311 (2017) https://doi.org/10.1117/12.2257463

KEYWORDS: SRAF, Extreme ultraviolet lithography, Diffraction, Photomasks, Image enhancement, Logic, Source mask optimization, Critical dimension metrology, Image acquisition, 3D image processing, Lithographic illumination

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SPIE Journal Paper | 30 November 2016

Illumination pupil optimization in 0.33-NA extreme ultraviolet lithography by intensity balancing for semi-isolated dark field two-bar M1 building blocks

Thorsten Last, Laurens de Winter, Paul van Adrichem, Jo Finders

JM3, Vol. 15, Issue 04, 043508, (November 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.043508

KEYWORDS: Critical dimension metrology, Lithographic illumination, Extreme ultraviolet lithography, Lithography, Tantalum, Photomasks, Diffraction, Extreme ultraviolet, Line width roughness, Image acquisition

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Proceedings Article | 20 October 2016 Paper

Illumination pupil optimization in 0.33NA EUVL by intensity balancing for semi-iso dark field two-bar M1 building blocks

T. Last, L. de Winter, P. van Adrichem, J. Finders

Proceedings Volume 10032, 100320A (2016) https://doi.org/10.1117/12.2248743

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Lithographic illumination, Extreme ultraviolet, Lithography, Tantalum, Diffraction, Image acquisition, Nanoimprint lithography, Line width roughness

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Proceedings Article | 19 October 2016 Paper

Experimental verification of AI decomposition-based source optimization for M1 two-bar building blocks in 0.33NA EUVL

T. Last, Z. Wang, P. van Adrichem, L. de Winter, J. Finders

Proceedings Volume 9985, 99850W (2016) https://doi.org/10.1117/12.2240862

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Source mask optimization, Diffraction, Critical dimension metrology, Photomicroscopy, Artificial intelligence, SRAF, 3D image processing

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Proceedings Article | 17 April 2014 Paper

EUV source-mask optimization for 7nm node and beyond

Xiaofeng Liu, Rafael Howell, Stephen Hsu, Kaiyu Yang, Keith Gronlund, Frank Driessen, Hua-Yu Liu, Steven Hansen, Koen van Ingen Schenau, Thijs Hollink, Paul van Adrichem, Kars Troost, Jörg Zimmermann, Oliver Schumann, Christoph Hennerkes, Paul Gräupner

Proceedings Volume 9048, 90480Q (2014) https://doi.org/10.1117/12.2047584

KEYWORDS: Source mask optimization, Photomasks, Extreme ultraviolet, Scanners, Fiber optic illuminators, 3D modeling, Optimization (mathematics), Extreme ultraviolet lithography, Deep ultraviolet, Algorithm development

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Proceedings Article | 14 October 2011 Paper

A new source optimization approach for 2X node logic

Kazuya Iwase, Peter De Bisschop, Bart Laenens, Zhipan Li, Keith Gronlund, Paul van Adrichem, Stephen Hsu

Proceedings Volume 8166, 81662A (2011) https://doi.org/10.1117/12.898749

KEYWORDS: SRAF, Photomasks, Logic, Source mask optimization, Critical dimension metrology, Double patterning technology, Resolution enhancement technologies, Molybdenum, Surface plasmons, Model-based design

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Proceedings Article | 2 April 2011 Paper

Use of scatterometry for scanner matching

Holger Bald, Rolf Seltmann, Karsten Bubke, Matthias Ruhm, Marc Noot, Dieter Woischke, Paul van Adrichem, Paul Luehrmann

Proceedings Volume 7985, 79850J (2011) https://doi.org/10.1117/12.886120

KEYWORDS: Scanners, Scatterometry, Scanning electron microscopy, Semiconducting wafers, Optical proximity correction, Time metrology, Metrology, High volume manufacturing, Cadmium sulfide, Cadmium

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Proceedings Article | 23 March 2011 Paper

Simulation-based scanner tuning using FlexRay capability and scatterometry

Karsten Bubke, Matthias Ruhm, Rafael Aldana, Martin Niehoff, Xu Xie, Justin Ghan, Paul van Adrichem, Holger Bald, Paul Luehrmann, Stefan Roling, Rolf Seltmann

Proceedings Volume 7973, 79732E (2011) https://doi.org/10.1117/12.890501

KEYWORDS: Data modeling, Scanners, Scatterometry, Scanning electron microscopy, Metrology, Critical dimension metrology, Semiconducting wafers, Printing, Imaging systems, Cadmium

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Proceedings Article | 23 March 2011 Paper

Characterization and control of dynamic lens heating effects under high volume manufacturing conditions

J. Bekaert, L. Van Look, G. Vandenberghe, P. van Adrichem, M. Maslow, J.-W. Gemmink, H. Cao, S. Hunsche, J. T. Neumann, A. Wolf

Proceedings Volume 7973, 79730V (2011) https://doi.org/10.1117/12.881609

KEYWORDS: Calibration, Semiconducting wafers, Scanners, Reticles, Monochromatic aberrations, Photomasks, HVAC controls, Manufacturing, Diffraction, Wavefronts

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Proceedings Article | 23 March 2011 Paper

Scanner matching for standard and freeform illumination shapes using FlexRay

J. Bekaert, L. Van Look, K. D'havé, B. Laenens, G. Vandenberghe, P. van Adrichem, W. Shao, J. Ghan, K. Schreel, J. T. Neumann

Proceedings Volume 7973, 79731I (2011) https://doi.org/10.1117/12.881607

KEYWORDS: Scanners, Fiber optic illuminators, Semiconducting wafers, Photomasks, Reticles, Diffractive optical elements, Cadmium, Critical dimension metrology, Manufacturing, Optical lithography

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SPIE Journal Paper | 1 January 2011

Experimental verification of source-mask optimization and freeform illumination for 22-nm node static random access memory cells

Joost Bekaert, Bart Laenens, Staf Verhaegen, Lieve Van Look, Darko Trivkovic, Frederic Lazzarino, Geert Vandenberghe, Paul van Adrichem, Robert Socha, Stephen Hsu, Hua-yu Liu, Orion Mouraille, Koen Schreel, Mircea Dusa, Jörg Zimmermann, Paul Gräupner, Jens Neumann

JM3, Vol. 10, Issue 1, 013008, (January 2011) https://doi.org/10.1117/12.10.1117/1.3541778

KEYWORDS: Source mask optimization, Photomasks, Diffractive optical elements, Semiconducting wafers, Scanners, Manufacturing, Double patterning technology, Fiber optic illuminators, Optical lithography, Lithographic illumination

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Proceedings Article | 4 March 2010 Paper

Freeform illumination sources: an experimental study of source-mask optimization for 22-nm SRAM cells

J. Bekaert, B. Laenens, S. Verhaegen, L. Van Look, D. Trivkovic, F. Lazzarino, G. Vandenberghe, P. van Adrichem, R. Socha, S. Baron, M. C. Tsai, K. Ning, S. Hsu, H. Y. Liu, M. Mulder, A. Bouma, E. van der Heijden, O. Mouraille, K. Schreel, J. Finders, M. Dusa, J. Zimmermann, P. Gräupner, J. T. Neumann, C. Hennerkes

Proceedings Volume 7640, 764008 (2010) https://doi.org/10.1117/12.846918

KEYWORDS: Source mask optimization, Photomasks, Semiconducting wafers, Diffractive optical elements, Manufacturing, Double patterning technology, Scanners, Electroluminescence, Fiber optic illuminators, Optical lithography

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Proceedings Article | 23 September 2009 Paper

Feasibility study of the approach to flare, shadowing, optical and process corrections for EUVL OPC

Peter Nikolsky, Natalia Davydova, Koen van Ingen Schenau, Paul van Adrichem, Eric Hendrickx, Gian Lorusso, Jiong Jiang, Wei Liu, Huayu Liu

Proceedings Volume 7488, 74882N (2009) https://doi.org/10.1117/12.833527

KEYWORDS: Optical proximity correction, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Data modeling, Calibration, Semiconducting wafers, Optical calibration, Optical lithography, Scanners

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Proceedings Article | 6 March 2009 Paper

Improved model predictability by machine data in computational lithography and application to laser bandwidth tuning

Stefan Hunsche, Qian Zhao, Xu Xie, Robert Socha, Hua-Yu Liu, Peter Nikolsky, Anthony Ngai, Paul van Adrichem, Michael Crouse, Ivan Lalovic

Proceedings Volume 7274, 727405 (2009) https://doi.org/10.1117/12.814644

KEYWORDS: Data modeling, Scanners, Semiconducting wafers, Calibration, Process modeling, Fiber optic illuminators, Model-based design, Optical proximity correction, Photomasks, Computational lithography

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Proceedings Article | 17 October 2008 Paper

OPC cycle time reduction and accuracy improvement by early access to advanced Tachyon modeling of TWINSCAN XT:1900i scanner

Peter Nikolsky, Tjitte Nooitgedagt, Paul van Adrichem, Jeroen Meessen, Carsten Kohler, Baukje Wisse, Stefan Hunsche

Proceedings Volume 7122, 712249 (2008) https://doi.org/10.1117/12.802204

KEYWORDS: Optical proximity correction, Data modeling, Calibration, Scanning electron microscopy, Atrial fibrillation, Scanners, Aluminum, Photoresist processing, Photomasks, 3D modeling

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Proceedings Article | 4 March 2008 Paper

Application of layout DOE in RET flow

Yunqiang Zhang, Paul van Adrichem, Ji Li, Amy Yang, Kevin Lucas

Proceedings Volume 6925, 69251H (2008) https://doi.org/10.1117/12.773059

KEYWORDS: Optical proximity correction, Diffractive optical elements, Atrial fibrillation, Critical dimension metrology, Resolution enhancement technologies, Lithography, Error analysis, Head, Bridges, Process modeling

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At low k1 lithography and strong off-axis illumination, it is very hard to achieve edge-placement tolerances and 2-D image fidelity requirements for some layout configurations. Quite often these layouts are within simple design rules constraint for a given technology node. Evidently it is important to have these layouts included during early RET flow development. Simple shrinkage from previous technology node is quite common, although often not enough. For logic designs, it is hard to control design styles. Moreover for engineers in fabless design groups, it is difficult to assess the manufacturability of their layouts because of the lack of understanding of the litho process. Assist features (AF) are frequently placed according to pre-determined rules to improve lithography process window. These rules are usually derived from lithographic models. Direct validation of AF rules is required at development phase.To ensure good printability through process window, process aware optical proximity correction (OPC) recipes were developed. Generally rules based correction is performed before model based correction. Furthermore, there are also lots of other options and parameters in OPC recipes for an advanced technology, thus making it difficult to holistically optimize performance of recipe bearing all these variables in mind. In this paper we demonstrate the application of layout DOE in RET flow development. Layout pattern libraries are generated using the Synopsys Test Pattern Generator (STPG), which is embedded in a layout tool (ICWB). Assessment gauges are generated together with patterns for quick correction accuracy assessment. OPC verification through full process is also deployed. Several groups of test pattern libraries for different applications are developed, ranging from simple 1D pattern for process capability study and settings of process aware parameters to a full set of patterns for the assessment of rules based correction, line end and corner interaction, active and poly interaction, and critical patterns for contact coverage, etc. Restrictive design rules (RDR) are commonly deployed to eliminate problematic layouts. We demonstrate RDR evaluation and validation using our layout design of experiments (DOE) approach. This technique of layout DOE also offers a simple and yet effective way to verify AF placement rules. For a given nominal layout features all possible assist features are generated within the mask rules constraint using STPG. Then we run OPC correction and assess main feature critical dimension (CD) at best and worst process condition in ICWB. Best assist feature placement rules are derived based on minimum CD difference. The rules derived from this approach are not the same as those derived from the commonly used method of least intensity variation.

Proceedings Article | 14 November 2007 Paper

Determining OPC target specifications electrically instead of geometrically

Qiaolin Charlie Zhang, Paul van Adrichem

Proceedings Volume 6730, 67303V (2007) https://doi.org/10.1117/12.746746

KEYWORDS: Transistors, Optical proximity correction, Lithography, Optical lithography, Distortion, Molybdenum, Device simulation, Shape analysis, Critical dimension metrology, Photomasks

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Proceedings Article | 31 October 2007 Paper

OPC development in action for advanced technology nodes

Anthony Chunqing Wang, Masashi Fujimoto, Paul van Adrichem, Ingo Bork, Hiroshi Yamashita

Proceedings Volume 6730, 673059 (2007) https://doi.org/10.1117/12.746838

KEYWORDS: Calibration, Optical proximity correction, Process modeling, Metrology, Data modeling, Scanning electron microscopy, Mathematical modeling, Edge roughness, Lithography, Statistical modeling

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Proceedings Article | 30 October 2007 Paper

Full-chip process window aware OPC capability assessment

Robert Lugg, Matt StJohn, Yunqiang Zhang, Amy Yang, Paul Van Adrichem

Proceedings Volume 6730, 67302U (2007) https://doi.org/10.1117/12.746839

KEYWORDS: Optical proximity correction, Critical dimension metrology, Metals, Diffractive optical elements, Image segmentation, Atrial fibrillation, Process modeling, Nano opto mechanical systems, Logic, Process control

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SPIE Journal Paper | 1 July 2007

Novel apodization and pellicle optical models for accurate optical proximity correction modeling at 45 and 32 nm

Qiaolin Zhang, Kevin Lucas, Paul Van Adrichem, Jacek Tyminski, Joseph Gordon

JM3, Vol. 6, Issue 03, 031003, (July 2007) https://doi.org/10.1117/12.10.1117/1.2783418

KEYWORDS: Apodization, Optical proximity correction, Pellicles, Data modeling, Lithography, Signal attenuation, Critical dimension metrology, Gaussian filters, Calibration, Optical filters

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Proceedings Article | 15 May 2007 Paper

Efficient post-OPC lithography hotspot detection using a novel OPC correction and verification flow

Qiaolin Zhang, Paul VanAdrichem, Kevin Lucas

Proceedings Volume 6607, 66072X (2007) https://doi.org/10.1117/12.729016

KEYWORDS: Optical proximity correction, Process modeling, Statistical modeling, Lithography, Critical dimension metrology, Performance modeling, Error analysis, Model-based design, Scanners, Photomasks

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Proceedings Article | 21 March 2007 Paper

Scanner-characteristics-aware OPC modeling and correction

Jacek Tyminski, Qiaolin Zhang, Kevin Lucas, Laurent Depre, Paul VanAdrichem

Proceedings Volume 6521, 65210Z (2007) https://doi.org/10.1117/12.711624

KEYWORDS: Optical proximity correction, Scanners, Critical dimension metrology, Fiber optic illuminators, Error analysis, Performance modeling, Reticles, Coastal modeling, Model-based design, Optical lithography

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Proceedings Article | 15 March 2006 Paper

Hyper-NA model validation for the 45-nm node

Shane Palmer, Min Bai, Paul J. van Adrichem

Proceedings Volume 6155, 615505 (2006) https://doi.org/10.1117/12.656059

KEYWORDS: Data modeling, Optical proximity correction, Photomasks, Polarization, Semiconducting wafers, Fiber optic illuminators, Lithography, Silicon, Immersion lithography, Mathematical modeling

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Proceedings Article | 5 November 2005 Paper

A practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyond

Martin Drapeau, Paul J. van Adrichem, Lieve van Look, Bryan Kasprowicz

Proceedings Volume 5992, 59921T (2005) https://doi.org/10.1117/12.632040

KEYWORDS: 3D modeling, Etching, Phase shifts, Photomasks, Optical proximity correction, Semiconducting wafers, Calibration, Light scattering, Critical dimension metrology, Resolution enhancement technologies

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Proceedings Article | 28 June 2005 Paper

Reducing alternating phase shift mask (Alt-PSM) write-time through mask data optimization

Bryan Kasprowicz, Paul van Adrichem, Manoj Chacko

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617136

KEYWORDS: Photomasks, Reticles, Quartz, Etching, Optical proximity correction, Phase shifts, Resolution enhancement technologies, Manufacturing, SRAF, Binary data

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Proceedings Article | 28 June 2005 Paper

65nm mask CD qualification on critical features through simulation based lithography verification

Paul van Adrichem, John Valadez, David Ziger, Dave Gerold

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617519

KEYWORDS: Photomasks, Critical dimension metrology, Optical proximity correction, Reticles, Computed tomography, Semiconducting wafers, Metrology, Lithography, Mask making, Silicon

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Proceedings Article | 28 June 2005 Paper

An efficient resolution enhancement technique flow for 65nm logic poly layer

Paul van Adrichem, Manoj Chacko, Bryan Kasprowicz

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617363

KEYWORDS: Resolution enhancement technologies, Photomasks, Optical proximity correction, Manufacturing, Logic, Semiconducting wafers, Phase shifts, Critical dimension metrology, Cadmium, Phase shifting

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Proceedings Article | 16 June 2005 Paper

The interaction of mask manufacturability and alt PSM design parameters

B. Kasprowicz, P. van Adrichem

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637284

KEYWORDS: Manufacturing, Reticles, Photomasks, Quartz, Binary data, Etching, Optical proximity correction, Critical dimension metrology, Neodymium, Phase shifts

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Proceedings Article | 26 June 2003 Paper

Extending ArF to the 65-nm node with full-phase lithography

Frank Driessen, Christophe Pierrat, Geert Vandenberghe, Kurt Ronse, Paul van Adrichem, Hua-Yu Liu

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485426

KEYWORDS: Photomasks, Lithography, Binary data, Optical lithography, Optical proximity correction, Logic, Scanning electron microscopy, Printing, Chromium, Diffraction

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Proceedings Article | 2 June 2003 Paper

Use of silicon-versus-layout verification (SiVL) in process control of wafer lithography and mask-making metrology

Paul van Adrichem, Frank Driessen, Kees van Hasselt

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485001

KEYWORDS: Photomasks, Semiconducting wafers, Computed tomography, Process control, Optical proximity correction, Silicon, Lithography, Metrology, Error analysis, Binary data

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Proceedings Article | 28 May 2003 Paper

Fully automated CD: metrology and mask inspection in a mask production environment using the MueTec DUV tool

Gerd Scheuring, Alexander Petrashenko, Stefan Doebereiner, Frank Hillmann, Hans-Jurgen Bruck, Andrew Hourd, Anthony Grimshaw, Gordon Hughes, Shiuh-Bin Chen, Parkson Chen, Thomas Schatz, Thomas Struck, Paul van Adrichem, Herman Boerland, Sigrid Lehnigk

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.515107

KEYWORDS: Photomasks, Critical dimension metrology, Reticles, Inspection, Deep ultraviolet, Metrology, Binary data, Objectives, Environmental sensing, Cameras

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Proceedings Article | 27 December 2002 Paper

Mask error enhancement-factor (MEEF) metrology using automated scripts in CATS

Paul J. M. van Adrichem, Frank Driessen, Kees van Hasselt, Hans-Juergen Brueck

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467755

KEYWORDS: Reticles, Photomasks, Semiconducting wafers, Computed tomography, Critical dimension metrology, Optical proximity correction, Image processing, Binary data, Metrology, Semiconductors

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Proceedings Article | 30 July 2002 Paper

Aerial image simulations of soft and phase defects in 193-nm lithography for 100-nm node

Frank Driessen, Paul van Adrichem, Vicky Philipsen, Rik Jonckheere, Hua-Yu Liu, Linard Karklin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474498

KEYWORDS: Binary data, Photomasks, Printing, Critical dimension metrology, Lithography, Antimony, Reticles, Chromium, Transparency, Resolution enhancement technologies

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Proceedings Article | 30 July 2002 Paper

Model-based corrections for complementary phase-shift mask toward 70-nm technology node

Frank Driessen, Geert Vandenberghe, Monique Ercken, Patrick Montgomery, Kurt Ronse, Paul van Adrichem, Jason Li, Hua-Yu Liu, Linard Karklin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.490520

KEYWORDS: Model-based design

Proceedings Article | 11 March 2002 Paper

Performance optimization of the double-exposure alternating PSM for (sub-)100-nm ICs

Geert Vandenberghe, Frank Driessen, Paul Vanadrichem, Kurt Ronse, Jason Li, Linard Karklin

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458316

KEYWORDS: Photomasks, Optical proximity correction, Binary data, Reticles, Semiconducting wafers, Optical lithography, Logic, Resolution enhancement technologies, Scanning electron microscopy, Etching

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Proceedings Article | 11 March 2002 Paper

New generation photomasks: 193-nm defect printability study

Linard Karklin, Paul van Adrichem, Frank Driessen, Stan Mazor

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458315

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Printing, Critical dimension metrology, Binary data, Resolution enhancement technologies, Lithographic illumination, Image processing, Optical lithography

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Proceedings Article | 27 April 1999 Paper

Layout-based manufacturability assessment and yield prediction methodology

Paul Simon, Kees Veelenturf, Paul van Adrichem, Jeroen de Jong, Stanley Sprij, Wojciech Maly

Proceedings Volume 3743, (1999) https://doi.org/10.1117/12.346928

KEYWORDS: Manufacturing, Metals, Logic, Databases, Data modeling, Transistors, Semiconductors, Yield improvement, Product engineering, Etching

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Showing 5 of 46 publications

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