Dr. Sang-In Han Profile

Dr. Sang-In Han

at Motorola Solutions Inc

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 20 May 2004 Paper

Development of phase shift masks for extreme ultraviolet lithography and optical evaluation of phase shift materials

Sang-In Han, Eric Weisbrod, James Wasson, Rich Gregory, Qianghua Xie, Pawitter Mangat, Scott Hector, William Dauksher, Kristine Rosfjord

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535503

KEYWORDS: Reflectivity, Extreme ultraviolet, Etching, Phase shifts, Photomasks, Extreme ultraviolet lithography, Silicon, Scattering, Lithography, Chemical species

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Proceedings Article | 17 December 2003 Paper

EUV radiation damage test on EUVL mask absorber materials

Bing Lu, James Wasson, Sang-In Han, Pawitter Mangat, Victoria Golovkina, Franco Cerrina

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517972

KEYWORDS: Extreme ultraviolet lithography, Reflectivity, Extreme ultraviolet, Hydrogen, Deep ultraviolet, Inspection, Plasma enhanced chemical vapor deposition, Plasma etching, Spectroscopy, Photomasks

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Proceedings Article | 16 June 2003 Paper

Design and method of fabricating phase-shift masks for extreme-ultraviolet lithography by partial etching into the EUV multilayer mirror

Sang-In Han, Eric Weisbrod, Qianghua Xie, Pawitter Mangat, Scott Hector, William Dauksher

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.484731

KEYWORDS: Reflectivity, Photomasks, Etching, Phase shifts, Tolerancing, Multilayers, Extreme ultraviolet lithography, Extreme ultraviolet, Signal attenuation, Chromium

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Proceedings Article | 27 December 2002 Paper

Recovery of Mo/Si-multilayer-coated LTEM substrate

Pawitter Mangat, A. Alec Talin, Andrew Hooper, Diana Convey, Sang-In Han, James Wasson

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468106

KEYWORDS: Etching, Molybdenum, Surface roughness, Photomasks, Silicon, Multilayers, Extreme ultraviolet lithography, Reflectivity, Extreme ultraviolet, Annealing

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Proceedings Article | 27 December 2002 Paper

Integration of antireflection coatings on EUV absorber stacks

James Wasson, Sang-In Han, N. Edwards, Eric Weisbrod, William Dauksher, Pawitter Mangat, Donald Pettibone

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468104

KEYWORDS: Inspection, Reflectivity, Reticles, Etching, Extreme ultraviolet, Multilayers, Chromium, Extreme ultraviolet lithography, Antireflective coatings, Photomasks

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Proceedings Article | 1 July 2002 Paper

Novel design of att-PSM structure for extreme-ultraviolet lithography and enhancement of image contrast during inspection

Sang-In Han, James Wasson, Pawitter Mangat, Jonathan Cobb, Kevin Lucas, Scott Hector

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472324

KEYWORDS: Phase shifts, Binary data, Chromium, Photomasks, Reflectivity, Inspection, Signal attenuation, Extreme ultraviolet, Extreme ultraviolet lithography, Multilayers

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Attenuated Phase Shift Masks (Att-PSM) have been actively investigated and developed for conventional optical lithography to enhance the lithographic performance. In this paper, Att-PSM for Extreme Ultraviolet Lithography (EUVL) is compared to binary EUVL masks through simulation. Additionally, a new structural design for EUVL Att-PSM that is intended to enhance the image contrast during the inspection is also presented. Aerial image simulation for 50 and 35-nm wide contact holes was performed using an internally developed optical projection lithography simulator. Analysis of phase shift and attenuation for various combinations of Att-PSM layers was also done using an internally developed simulator based on optical multilayer thin film theory. The results of aerial image simulation agree with previously published results in that Att-PSM for EUVL provide steeper edge profile and higher peak intensity compared to the binary EUVL mask. These enhanced aerial images provide greater exposure latitude and 28 percent to 80 percent greater depth of focus for Att-PSM compared to binary masks for printing contacts. The simulations were also used to set initial targets for phase and reflectance control of the PSM stack for 35-nm contacts. Mean reflectance between 3 and 6 percent and phase of 180 +/- 10 degrees result in significantly larger DOF than for binary masks. The prototype structure simulated for an EUVL Att-PSM consists of an upper dielectric layer (SiON) and a lower metal layer (TaN or Cr) on top of Mo/Si multilayer mirror. With this dual layer scheme, satisfying the optical requirements is easier than with a single layer structure because accurate control of phase shift and attenuation is possible by controlling the thickness of both the upper and lower layers. Obtaining the desired phase shift and transmission using a single layer is difficult. The advantage of having a dielectric (SiON) top layer is that the thickness of dielectric layer can be optimized to enhance the image contrast at inspection wavelength (normally DUV) as well as to provide the desired phase shift at exposure wavelength (13.4-13.5nm). Another advantage of Att-PSM for EUVL is the reduced height of patterned structure on the multilayer mirror which provides a relative advantage in resolution by reducing the image blur caused by the shadowing effects of the taller absorber stack.

Proceedings Article | 22 January 2001 Paper

Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiNx membranes

Sang-In Han, Pawitter Mangat, William Dauksher, Michael Chor, James Liddle, Anthony Novembre

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410751

KEYWORDS: Photomasks, Etching, Charged-particle lithography, Silicon, Semiconducting wafers, Refraction, Silicon films, Scattering, Low pressure chemical vapor deposition, Chromium

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Showing 5 of 7 publications

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