This paper describes the joint development and optimization of an advanced critical dimension (CD) control methodology at IBM’s 300 mm semiconductor facility. The work is initially based on 22 nm critical level gate CD control, but the methodology is designed to support both the lithography equipment (1.35 NA scanners) and processes for 22, 20, 18, and 14 nm node applications. Specifically, this paper describes the CD uniformity of processes with and without enhanced CD control applied. The control methodology is differentiated from prior approaches1 by combining independent process tool compensations into an overall CD dose correction signature to be applied by the exposure tool. In addition, initial investigations of product specific focus characterization and correction are also described.
mmunication between lithography and metrology is becoming increasingly demanding in advanced nodes. This is where the requirements for metrology become extremely tight. This work is dedicated to the search for "clean" metrology that is required to address these requirements. Metrology measurements are obtained via an angle-resolved scatterometry-based platform (called YieldStar). Details of the technology behind YieldStar were thoroughly discussed by Vanoppen et al. in 2010. In this current work, measurement limits are challenged to test resolution and measurement uncertainty for overlay, critical dimension (CD), and sidewall angle (focus). Results indicate an atomic-scale performance of deep subnanometers. Two different sizes of scatterometry-based overlay targets are evaluated and compared using a technique called the similarity index. A CD reconstruction model is tested for cross talk of underlying thin-film layers, specifically the case where one of the underlying layers is anisotropic. A systematic approach is taken to increase the complexity of a CD reconstruction model in steps to evaluate the capability of handling birefringence effects of anisotropic material in the model. CD metrology data (1-D and 2-D/hole layers) are compared to CD scanning electron microscope data. Focus measurements are also extended for product wafers, and focus precision is evaluated. In addition, CD metrology monitor wafer applications, such as hotplate monitoring and overlay metrology monitor wafer application for scanner stability and matched machine overlay, are tested.
KEYWORDS: Overlay metrology, Metrology, Semiconducting wafers, Scanners, Back end of line, Lithography, 3D metrology, Finite element methods, Scatterometry, Critical dimension metrology
Advanced lithography is becoming increasingly demanding when speed and sophistication in communication
between litho and metrology (feedback control) are most crucial. Overall requirements are so extreme that all
measures must be taken in order to meet them. This is directly driving the metrology resolution, precision and
matching needs in to deep sub-nanometer level as well as driving the need for higher sampling (throughput).
Keeping the above in mind, a new scatterometry-based platform (called YieldStar) is under development at
ASML. Authors have already published results of a thorough investigation of this promising new metrology
technique which showed excellent results on resolution, precision and matching for overlay, as well as basic and
advanced capabilities for CD. In this technical presentation the authors will report the newest results taken from
YieldStar. This new work is divided in two sections: monitor wafer applications and product wafer applications.
Under the monitor wafer application: overlay, CD and focus applications will be discussed for scanner and track hotplate control. Under the product wafer application: first results from integrated metrology will be reported followed by poly layer and 3D CD reconstruction results from hole layers as well as overlay-results from small (30x60um), process-robust overlay targets are reported.
KEYWORDS: Overlay metrology, Semiconducting wafers, Metrology, Scanners, Lithography, Back end of line, Metals, Scatterometry, Front end of line, Signal to noise ratio
Advanced lithography is becoming increasingly demanding when speed and sophistication in communication
between litho and metrology (feedback control) are most crucial. Overall requirements are so extreme that all
measures must be taken in order to meet them. This is directly driving the metrology resolution, precision and
matching needs in to deep sub-nanometer level [4].
Keeping the above in mind, a new scatterometry-based platform is under development at ASML. Authors have
already published results of a thorough investigation of this promising new metrology technique which showed
excellent results on resolution, precision and matching for overlay, as well as basic and advanced capabilities for
CD [1], [2], [3]. In this technical presentation the authors will report the newest results from this ASML platform.
This new work was divided in two sections: monitor wafer applications (scanner control - overlay, CD and focus)
and product wafer applications.
A brand new CD metrology technique that can address the need for accuracy, precision and speed in near future
lithography is probably one of the most challenging items. CDSEMs have served this need for a long time,
however, a change of or an addition to this traditional approach is inevitable as the increase in the need for better
precision (tight CDU budget) and speed (driven by the demand for increase in sampling) continues to drive the
need for advanced nodes.
The success of CD measurement with scatterometry remains in the capability to model the resist grating, such as,
CD and shape (side wall angle), as well as the under-lying layers (thickness and material property). Things are
relatively easier for the cases with isotropic under-lying layers (that consists of single refractive or absorption
indices). However, a real challenge to such a technique becomes evident when one or more of the under-lying
layers are anisotropic.
In this technical presentation the authors would like to evaluate such CD reconstruction technology, a new
scatterometry based platform under development at ASML, which can handle bi-refringent non-patterned layers
with uniaxial anisotropy in the underlying stack. In the RCWA code for the bi-refringent case, the elegant
formalism of the enhanced transmittance matrix can still be used. In this paper, measurement methods and data
will be discussed from several complex production stacks (layers). With inclusion of the bi-refringent modeling,
the in-plane and perpendicular n and k values can be treated as floating parameters for the bi-refringent layer, so
that very robust CD-reconstruction is achieved with low reconstruction residuals. As a function of position over
the wafer, significant variations of the perpendicular n and k values are observed, with a typical radial fingerprint
on the wafer, whereas the variations in the in-plane n and k values are seen to be considerably lower.
A new metrology technique is being evaluated to address the need for accuracy, precision, speed and sophistication in metrology in near-future lithography. Attention must be paid to these stringent requirements as the current metrology capabilities may not be sufficient to support these near future needs. Sub-nanometer requirements in accuracy and precision along with the demand for increase in sampling triggers the need for such evaluation.
This is a continuation of the work published at SPIE Asia conference, 2008. In this technical presentation the authors would like to continue on reporting the newest results from this evaluation of such technology, a new scatterometry based platform under development at ASML, which has the potential to support the future needs.
Extensive data collection and tests are ongoing for both CD and overlay. Previous data showed overlay performance on production layers [1] that meet 22 nm node requirements. The new data discussed in this presentation is from further investigation on more process robust overlay targets and smaller target designs. Initial
CD evaluation data is also discussed.
Need for accuracy, precision, speed and sophistication in metrology has increased tremendously over the past few
years. Lithography performance will increasingly depend on post patterning metrology and this dependency will
be heavily accelerated by technology shrinkage. These requirements will soon become so stringent that the
current metrology capabilities may not be sufficient to support these near future needs. Accuracy and precision
requirements approaching well into sub-nanometer range while the demand for increase in sampling also
continues, triggering the need for a new technology in this area.
In this technical presentation the authors would like to evaluate such technology that has the potential to support
the future needs. Extensive data collection and tests are ongoing for both CD and overlay. Data on first order
diffraction based overlay shows unprecedented measurement precision. The levels of precision are so low that for
evaluation special methods has been developed and tested. In this paper overlay measurement method and data
will be discussed, as well as applicability for future nodes and novel lithography techniques. CD data will be
reported in the future technical publications.
Advanced Process Control (APC) on overlay is in use for high-volume production fabs with enough data available to statistically filter out noise contributions. In a foundry that is characterized by multiple products, each with a low production volume, very limited data is available per product. With the proposed advanced process control system we want to solve the issues related to this low amount of data by using data from lots that have a different history, e.g. lots that are exposed on other machines or lots from other products. To be able to do this production data is first corrected for machine contributions by use of monitor data for each machine. The resulting estimated process induced errors are maintained for all products and all layers in a database with reference to used machines, layers, product type and process family. The process induced errors for each lot are selected from the database by sharing available data that is expected to behave most similar. The proposed advanced process control system is partially implemented in production for a couple of layers. Simulations are run on more layers to test the data sharing concept. The simulation
results are in reasonable agreement with actual product measurements and predict that the advanced process control system performs similar for lots for which the proposed data sharing concept is used as for lots for which the identical context is available.
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