Mr. Yasushi Sakaida Profile

Yasushi Sakaida

at Nissan Chemical Corp

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Author

Publications (16)

Proceedings Article | 27 March 2017 Paper

Novel gap filling BARC with high chemical resistance

Hiroto Ogata, Yuto Hashimoto, Yuki Usui, Mamoru Tamura, Tomoya Ohashi, Yasushi Sakaida, Takahiro Kishioka

Proceedings Volume 10146, 1014617 (2017) https://doi.org/10.1117/12.2257664

KEYWORDS: Resistance, Wet etching, Semiconductor manufacturing, Photomasks, Tin, Adhesives, Lithography, Absorbance, Etching, Polymers, Process control, Semiconducting wafers

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Proceedings Article | 29 March 2013 Paper

Dry development rinse process (DDRP) and material (DDRM) for novel pattern collapse free process

Rikimaru Sakamoto, Yasushi Sakaida, Bang-Ching Ho

Proceedings Volume 8682, 868205 (2013) https://doi.org/10.1117/12.2011511

KEYWORDS: Etching, Photoresist processing, Liquids, Materials processing, Lithography, Image processing, Photomasks, Extreme ultraviolet lithography, Immersion lithography, Polymers

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Because the pattern pitch is getting smaller and smaller, the pattern collapse issue in the lithography process have been getting the sever problem. Especially, pattern collapse is one of the main reasons for minimizing of process margin at fine pitch by EUV lithography. The possible major cause of pattern collapse is the surface tension of the rinsing liquid and the shrinkage of resist pattern’s surface in the process of drying the rinsing liquid. The influence of surface tension for very small pitch pattern is particularly severe. The one of the most effective solution for this problem is thinning of the resist film thickness, however this method is reaching to its limits in terms of substrate etching process anymore. The tri-layer resist process or hard mask processes have been used, but there is a limit to the thinning of resist film and there is no essential solution for this problem. On the other hand, the supercritical drying method has been known as an ultimate way to suppress the pattern collapse issue. The supercritical drying method is a dry process advanced to the vapor phase from the liquid phase via supercritical, and the supercritical drying method can dry the rinsing liquid without making the vapor-liquid coexistence state. However, this process is not applied to the mass production process because it requires the introduction of the special equipment. We newly developed the novel process and material which can prevent the pattern collapse issue perfectly without using any special equipment. The process is Dry Development Rinse Process (DDRP), and the material used in the process is Dry Development Rinse Material (DDRM). DDRM is containing the special polymer which can replace the exposed and developed part. And finally, the resist pattern will be developed by Dry etching process without any pattern collapse issue. In this paper, We will discuss the approach for preventing the pattern collapse issue in PTD and NTD process, and propose DDRP and DDRM as the solution.

Proceedings Article | 31 March 2010 Paper

Development of reverse materials for double patterning process

Yasushi Sakaida, Hiroaki Yaguchi, Rikimaru Sakamoto, Bang-Ching Ho

Proceedings Volume 7639, 76391Z (2010) https://doi.org/10.1117/12.846494

KEYWORDS: Double patterning technology, Image processing, Etching, Materials processing, Lithography, Semiconducting wafers, Photoresist processing, Immersion lithography, Optical lithography, Silicon

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Proceedings Article | 26 March 2010 Paper

Carbon-rich spin on sidewall material for self-aligned double-patterning technology

Dennis Shu-Hao Hsu, Hiroaki Yaguchi, Rikimaru Sakamoto, Daisuke Maruyama, Yasushi Sakaida, Walter Wang, Chun-Yen Huang, Wen-Bin Wu, Bang-Ching Ho, Chiang-Lin Shih

Proceedings Volume 7639, 763908 (2010) https://doi.org/10.1117/12.846267

KEYWORDS: Ultraviolet radiation, Amplifiers, Double patterning technology, Thin film coatings, Etching, Chemical reactions, Photoresist processing, Diffusion, Polymers, Industrial chemicals

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Proceedings Article | 11 December 2009 Paper

Development of silicon glass for etch reverse layer (SiGERL) materials and BARCs for double patterning process

Yasushi Sakaida, Hiroaki Yaguchi, Rikimaru Sakamoto, Bang-Ching Ho

Proceedings Volume 7520, 75201F (2009) https://doi.org/10.1117/12.837157

KEYWORDS: Etching, Coating, Double patterning technology, Silicon, Materials processing, Semiconducting wafers, Sensors, Glasses, Lithography, Optical lithography

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Proceedings Article | 4 December 2008 Paper

Development of multi-layer process materials for hyper-NA lithography process

Yasushi Sakaida, Makoto Nakajima, Tetsuya Shinjo, Keisuke Hashimoto

Proceedings Volume 7140, 71403Z (2008) https://doi.org/10.1117/12.804688

KEYWORDS: System on a chip, Silicon, Etching, Lithography, Reflectivity, Semiconducting wafers, Materials processing, Multilayers, Sensors, Immersion lithography

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Proceedings Article | 4 December 2008 Paper

A cost effective spin on sidewall material alternative to the CVD sidewall process

Daisuke Maruyama, Bang-Ching Ho, Sangwoong Yoon, Rikimaru Sakamoto, Yasushi Sakaida, Keisuke Hashimoto, Noriaki Fujitani, Hiroaki Yaguchi, Koutastu Matsubara

Proceedings Volume 7140, 714037 (2008) https://doi.org/10.1117/12.804490

KEYWORDS: Silicon, Thin film coatings, Chemical vapor deposition, Ultraviolet radiation, Double patterning technology, Lithography, Semiconducting wafers, Resistance, Interfaces, 193nm lithography

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Proceedings Article | 15 April 2008 Paper

High-etch-rate bottom-antireflective coating and gap-fill materials using dextrin derivatives in via first dual-damascene lithography process

Satoshi Takei, Yasushi Sakaida, Tetsuya Shinjo, Keisuke Hashimoto, Yasuyuki Nakajima

Proceedings Volume 6923, 69232P (2008) https://doi.org/10.1117/12.771902

KEYWORDS: Etching, Lithography, Polymers, Reflectivity, Coating, Semiconducting wafers, Silicon, Reactive ion etching, Dielectrics, Bottom antireflective coatings

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Proceedings Article | 26 March 2008 Paper

The design and evaluation of high barrier performance organic BARC material

Tomohisa Ishida, Rikimaru Sakamoto, Yoshiomi Hiroi, Yasushi Sakaida, Takahiro Hamada

Proceedings Volume 6923, 69232H (2008) https://doi.org/10.1117/12.772103

KEYWORDS: Polymers, Lithography, Semiconducting wafers, Contamination, Silicon, Semiconductors, Reflection, Polymer thin films, Optical lithography, Immersion lithography

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Proceedings Article | 4 April 2007 Paper

BARC (bottom anti-reflective coating) for immersion process

Yoshiomi Hiroi, Takahiro Kishioka, Rikimaru Sakamoto, Daisuke Maruyama, Takuya Ohashi, Tomohisa Ishida, Shigeo Kimura, Yasushi Sakaida, Hisayuki Watanabe

Proceedings Volume 6519, 651928 (2007) https://doi.org/10.1117/12.711305

KEYWORDS: Polymers, Etching, Semiconducting wafers, Photomasks, Immersion lithography, Ultraviolet radiation, Photoresist processing, Bottom antireflective coatings, Reflectivity, Absorption

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Proceedings Article | 2 April 2007 Paper

Multilayer BARCs for hyper-NA immersion lithography process

Yasushi Sakaida, Makoto Nakajima, Shigeo Kimura, Takahiro Sakaguchi, Keisuke Hashimoto, Hikaru Imamura

Proceedings Volume 6519, 65192A (2007) https://doi.org/10.1117/12.711382

KEYWORDS: System on a chip, Etching, Silicon, Reflectivity, Lithography, Immersion lithography, Photoresist processing, Reflection, Sensors, Semiconducting wafers

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Proceedings Article | 30 March 2007 Paper

Effect of solvents and cross-link reaction group concentration on via filling performance in gap fill materials

Satoshi Takei, Yasushi Sakaida, Tetsuya Shinjo

Proceedings Volume 6519, 65192V (2007) https://doi.org/10.1117/12.711308

KEYWORDS: Lithography, Polymers, Semiconducting wafers, Coating, Silicon, Etching, Bottom antireflective coatings, Photoresist processing, Copper, Semiconductors

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Proceedings Article | 11 April 2006 Paper

New advanced BARC and gap fill materials based on sublimate reduction for 193nm lithography

Satoshi Takei, Tetsuya Shinjo, Yasushi Sakaida, Yusuke Horiguchi, Yasuyuki Nakajima

Proceedings Volume 6153, 61532Q (2006) https://doi.org/10.1117/12.655398

KEYWORDS: Etching, Photoresist materials, Semiconducting wafers, Polymers, Silicon, Coating, Lithography, 193nm lithography, Reflectivity, Absorbance

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Proceedings Article | 4 May 2005 Paper

ARC and gap fill material with high etch rate for advanced dual damascene process

Tetsuya Shinjo, Satoshi Takei, Yasushi Sakaida, Anwei Qin, Yasuyuki Nakajima

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599249

KEYWORDS: Etching, Photoresist materials, Semiconducting wafers, Silicon, Reflectivity, Coating, Lithography, Copper, Polymers, Dielectrics

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Proceedings Article | 4 May 2005 Paper

New polymer platform of BARC for ArF lithography

Yoshiomi Hiroi, Takahiro Kishioka, Rikimaru Sakamoto, Daisuke Maruyama, Yasushi Sakaida, Takashi Matsumoto, Yasuyuki Nakajima, SangMun Chon, YoungHo Kim, Sangwoong Yoon, Seok Han, YoungHoon Kim, EunYoung Yoon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599421

KEYWORDS: Etching, Polymers, Lithography, Reflectivity, Semiconducting wafers, Silicon, Sensors, Polymerization, Control systems, Photoresist materials

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Proceedings Article | 14 May 2004 Paper

Developer-soluble gap fill materials for patterning metal trenches in via-first dual damascene process

Mandar Bhave, Kevin Edwards, Carlton Washburn, Satoshi Takei, Yasushi Sakaida, Yasuyuki Nakajima

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534338

KEYWORDS: Semiconducting wafers, Etching, Lithography, Standards development, Reactive ion etching, Optical lithography, Metals, Polymers, Photoresist materials, Materials processing

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Showing 5 of 16 publications

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