Dr. Mohamed El Kodadi Profile

Dr. Mohamed El Kodadi

Marketing Manager at ASML Netherlands BV

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Author

Publications (10)

Proceedings Article | 10 April 2024 Presentation + Paper

Driving exposure accuracy and cost-of-ownership on DUV immersion and dry-NXT scanner products

Wim de Boeij, Bart Smeets, Massimo Viola, Peter van Gils, Elliot Oti, Stefan Lichiardopol, Jelmer Kamminga, Mohamed El Kodadi, Aditya Deshpande, Alberto Pirati

Proceedings Volume 12953, 129530S (2024) https://doi.org/10.1117/12.3009961

KEYWORDS: Scanners, Distortion, Deep ultraviolet

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Proceedings Article | 28 April 2023 Presentation + Paper

Supporting future DRAM overlay and EPE roadmaps with the NXT:2100i

Bart Smeets, Paul Aben, Friso Klinkhamer, Jean Philippe van Damme, Bart Paarhuis, Raaja Ganapathy Subramanian, Mohamed El Kodadi, Stefan Lichiardopol, Alberto Pirati, Peter Vanoppen, Wim de Boeij

Proceedings Volume 12494, 124940R (2023) https://doi.org/10.1117/12.2657952

KEYWORDS: Reticles, Distortion, Semiconducting wafers, Overlay metrology, Optical alignment, Scanners, HVAC controls, Sensors, Reproducibility, Deep ultraviolet

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The foundations of leading edge DRAM manufacturing are built on accurate EUV lithography exposures in close synergy with cutting-edge immersion layers as well as advanced patterning schemes (e.g. self-aligned multiple patterning). Final device yield critically depends on the subsequent and accurate stacking of multiple layers with device features of precise width and edge placement. To support the ever-decreasing requirements for both the EUV as well as the DUV, (edge) placement accuracy, scanner enhancements are required on both platforms. In this paper we report on the improvements of the NXT:2100i immersion scanner to further reduce the (edge) placement errors within the die (intra-field) and across the full wafer (inter-field). The NXT:2100i incorporates a new projection optics with built-in distortion manipulator that extends the intra-field correction capability for both X and Y directions. The external overlay interface is extended with the distortion manipulator degrees of freedom to handle high spatial frequent distortion data of a to-be-matched scanner or high spatial frequent overlay fingerprints measured by after develop or after etch metrology. Thermal conditioning of the reticle is improved with a fast conditioned internal reticle library resulting in lower reticle-to-reticle temperature variation. Improved lens metrology (aberrations) and reticle align accuracy (alignment/overlay) is achieved with a better integrated image sensor. Improved alignment accuracy and reduced alignment process dependencies for wafer alignment are realized with 12-colors parallel measurements and by adding more alignment marks measurements at the wafer measure side without throughput impact. In concert with the hardware components, various software algorithms are updated, yielding improved inter- and intra-field overlay setup and improved reticle heating induced overlay. We will detail the specific module performance items as well as the system performance of the NXT:2100i scanner, both in reference (DRAM relevant overlay) to DUV as well as to EUV scanners.

Proceedings Article | 26 May 2022 Presentation + Paper

On-scanner high-spatial-frequency overlay control using a distortion manipulator

Friso Klinkhamer, Bart Smeets, Theo Thijssen, Francis Fahrni, Wim de Boeij, Mohamed El Kodadi, Thilo Pollak, Wolfgang Emer

Proceedings Volume 12051, 120510K (2022) https://doi.org/10.1117/12.2614031

KEYWORDS: Distortion, Scanners, Overlay metrology, Metrology, Lithography, Interfaces, Spatial frequencies, Semiconducting wafers, Extreme ultraviolet lithography

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Proceedings Article | 20 March 2020 Paper

On-product focus monitoring and control for immersion lithography in 3D-NAND manufacturing

Amine Lakcher, Ahmed Zayed, Jennifer Shumway, Jan-Pieter van Delft, Gratiela Isai, Ruxandra Mustata, Arno van den Brink, Taeddy Kim, Jay Jung, Yong-Sik Shin, Soo-Kyung Lee, Paul Böcker, Mohamed El Kodadi, Geert Vinken, ChanHa Park, Sangjun Han, Jeongsu Park, Beomki Shin, Gunwoong Lee

Proceedings Volume 11325, 1132521 (2020) https://doi.org/10.1117/12.2552930

KEYWORDS: Semiconducting wafers, Metrology, Scanners, Immersion lithography, Critical dimension metrology, Lithography, Lithographic process control

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Proceedings Article | 20 March 2018 Presentation + Paper

Smart overlay metrology pairing adaptive deep learning with the physics-based models used by a lithographic apparatus

Chan Hwang, Seung Yoon Lee, SeungHwa Oh, Emil Schmitt-Weaver, Jeonghyun Park, Daniel Park, Mohamed El Kodadi, Kaustuve Bhattacharyya

Proceedings Volume 10587, 105870B (2018) https://doi.org/10.1117/12.2297513

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Data modeling, Lithography, Optical alignment, Instrument modeling, Physics, Computing systems, Nanofabrication

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Proceedings Article | 13 March 2018 Presentation + Paper

Scanner focus metrology and control system for advanced 10nm logic node

Junghun Oh, Kwang-Seok Maeng , Jae-Hyung Shin, Won-Woong Choi, Sung-Keun Won, Cedric Grouwstra, Mohamed El Kodadi, Stephan Heil, Vidar van der Meijden, Jong Kyun Hong , Sang-Jin Kim, Oh-Sung Kwon

Proceedings Volume 10585, 105851O (2018) https://doi.org/10.1117/12.2297442

KEYWORDS: Scanners, Semiconducting wafers, Metrology, Control systems, Interfaces, Logic, Critical dimension metrology, Lithography, High volume manufacturing, Environmental monitoring

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Proceedings Article | 13 March 2018 Paper

Improved control of multi-layer overlay in advanced 8nm logic nodes

Tae-Sun Kim, Young-Sik Park, Yong-Chul Kim, Byoung-Hoon Kim, Ji-Hun Lee, Min-Keun Kwak, Sung-Won Choi, Joon-Soo Park, Hong-Cheon Yang, Philipp Meixner, Dong-jin Lee, Oh-Sung Kwon, Hyun-Su Kim, Jin-Tae Park, Sung-Min Lee, Cedric Grouwstra, Vidar van der Meijden, Mohamed El Kodadi, Chris Kim, Pierre-Yves Guittet, Tjitte Nooitgedagt

Proceedings Volume 10585, 1058527 (2018) https://doi.org/10.1117/12.2297099

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Overlay metrology, Logic, Metrology, Diffraction, Target acquisition, Performance modeling, Diffraction gratings

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Proceedings Article | 8 March 2016 Paper

Metrology target design simulations for accurate and robust scatterometry overlay measurements

Guy Ben-Dov, Inna Tarshish-Shapir, David Gready, Mark Ghinovker, Mike Adel, Eitan Herzel, Soonho Oh, DongSub Choi, Sang Hyun Han, Mohamed El Kodadi, Chan Hwang, Jeongjin Lee, Seung Yoon Lee, Kuntack Lee

Proceedings Volume 9778, 97783B (2016) https://doi.org/10.1117/12.2219108

KEYWORDS: Overlay metrology, Metrology, Critical dimension metrology, Scatterometry, Optical testing, Image processing, Scatter measurement, Optical metrology, Diffraction gratings, Diffraction, Semiconducting wafers, Wafer testing, Device simulation

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Proceedings Article | 19 March 2015 Paper

Overlay measurement accuracy enhancement by design and algorithm

Honggoo Lee, Byongseog Lee, Sangjun Han, Myoungsoo Kim, Wontaik Kwon, Sungki Park, DongSub Choi, Dohwa Lee, Sanghuck Jeon, Kangsan Lee, Tal Itzkovich, Nuriel Amir, Roie Volkovich, Eitan Herzel, Mark Wagner, Mohamed El Kodadi

Proceedings Volume 9424, 94242B (2015) https://doi.org/10.1117/12.2085272

KEYWORDS: Overlay metrology, Metrology, Scatterometry, Signal processing, Process control, Quality measurement, Lithography, Double patterning technology, Photomasks, Uncertainty analysis

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Proceedings Article | 19 March 2015 Paper

Overlay accuracy investigation for advanced memory device

Honggoo Lee, Byongseog Lee, Sangjun Han, Myoungsoo Kim, Wontaik Kwon, Sungki Park, DongSub Choi, Dohwa Lee, Sanghuck Jeon, Kangsan Lee, Roie Volkovich, Tal Itzkovich, Eitan Herzel, Mark Wagner, Mohamed Elkodadi

Proceedings Volume 9424, 94240C (2015) https://doi.org/10.1117/12.2085270

KEYWORDS: Overlay metrology, Metrology, Quality measurement, Signal processing, Image quality, Lithography, Target detection, Semiconducting wafers, Sensors, Etching

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Showing 5 of 10 publications

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