Mr. Rick Lai Profile

Rick Lai

Department Manager at Taiwan Semiconductor Manufacturing Co Ltd

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Author

Publications (11)

Proceedings Article | 22 November 2023 Presentation

A new 193nm inspection tool for N3 EUV mask inspection

Yian Huang, Owen Wang, Rick Lai

Proceedings Volume PC12751, PC1275105 (2023) https://doi.org/10.1117/12.2688128

KEYWORDS: Inspection, Extreme ultraviolet, Defect detection, Speckle, Signal to noise ratio, Objectives, Light sources and illumination, Calibration, Analog to digital converters

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Proceedings Article | 4 October 2016 Paper

Megasonic cleaning strategy for sub-10nm photomasks

Jyh-Wei Hsu, Martin Samayoa, Peter Dress, Uwe Dietze, Ai-Jay Ma, Chia-Shih Lin, Rick Lai, Peter Chang, Laurent Tuo

Proceedings Volume 9985, 998515 (2016) https://doi.org/10.1117/12.2241143

KEYWORDS: SRAF, Photomasks, Cavitation, Particles, Inspection, Glasses, Plasma, Mask cleaning, Acoustics, Oxygen

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Proceedings Article | 20 September 2013 Paper

Automated Defect Classification (ADC) and Progression Monitoring (DPM) in wafer fab reticle requalification

T. Yen, Rick Lai, Laurent Tuo, Vikram Tolani, Dongxue Chen, Peter Hu, Jiao Yu, George Hwa, Yan Zheng, Suresh Lakkapragada, Kechang Wang, Danping Peng, Bill Wang, Kaiming Chiang

Proceedings Volume 8880, 88800A (2013) https://doi.org/10.1117/12.2031786

KEYWORDS: Inspection, Reticles, Photomasks, Semiconducting wafers, Contamination, Air contamination, Optical proximity correction, Scanners, Defect inspection, Visualization

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Proceedings Article | 16 April 2012 Paper

AIMS D2DB simulation for DUV and EUV mask inspection

Danping Peng, Ying Li, Masaki Satake, Peter Hu, Jerry Chen, S. Hsu, Rick Lai, C. Lin, Laurent C. C. Tuo

Proceedings Volume 8352, 835209 (2012) https://doi.org/10.1117/12.921128

KEYWORDS: Photomasks, Diffraction, 3D modeling, Near field, Semiconducting wafers, Spherical lenses, Lithography, Deep ultraviolet, Extreme ultraviolet, Optical proximity correction

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Proceedings Article | 14 October 2011 Paper

Efficiency and throughput improvement on defect disposition through automated defect classification

Lin He, Noel Corcoran, Danping Peng, Vikram Tolani, Hsien-Min Chang, Paul Yu, Kechang Wang, C. J. Chen, T. H. Yen, Rick Lai, B. H. Ong, Laurent C. C. Tuo

Proceedings Volume 8166, 81661I (2011) https://doi.org/10.1117/12.896948

KEYWORDS: Inspection, Photomasks, Defect detection, Optical proximity correction, Classification systems, Image classification, Image resolution, Defect inspection, Lithography, Metals

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Proceedings Article | 14 October 2011 Paper

Enabling virtual wafer CD (WCD) using inverse pattern rendering (IPR) of mask CD-SEM images

Thuc Dam, Dongxue Chen, Hsien-Min Chang, Noel Corcoran, Paul Yu, Linyong Pang, Chia-Wei Chang, Rick Lai, Peter Chang, Laurent Tuo

Proceedings Volume 8166, 81660O (2011) https://doi.org/10.1117/12.896951

KEYWORDS: Scanning electron microscopy, Photomasks, Semiconducting wafers, Calibration, Critical dimension metrology, Optical proximity correction, Image processing, Signal to noise ratio, Mask making, Holons

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Proceedings Article | 29 September 2010 Paper

Lithographic plane review (LPR) for sub-32nm mask defect disposition

Vikram Tolani, Danping Peng, Lin He, George Hwa, Hsien-Min Chang, Grace Dai, Noel Corcoran, Thuc Dam, Linyong Pang, Laurent Tuo, C. J. Chen, Rick Lai

Proceedings Volume 7823, 78232G (2010) https://doi.org/10.1117/12.864284

KEYWORDS: Photomasks, Inspection, Lithography, Image restoration, Defect detection, Image transmission, Optical proximity correction, Image processing, Extreme ultraviolet, Scanning electron microscopy

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As optical lithography continues to extend into low-k1 regime, resolution of mask patterns under mask inspection optical conditions continues to diminish. Furthermore, as mask complexity and MEEF has also increased, it requires detecting even smaller defects in the already narrower pitch mask patterns. This leaves the mask inspection engineer with the option to either purchase a higher resolution mask inspection tool or increase the detector sensitivity on the existing inspection system or maybe even both. In order to meet defect sensitivity requirements in critical features of sub-32nm node designs, increasing sensitivity typically results in increased nuisance (i.e., small sub-specification) defect detection by 5-20X defects making post-inspection defect review non-manufacturable. As a solution for automatically dispositioning the increased number of nuisance and real defects detected at higher inspection sensitivity, Luminescent has successfully extended Inverse Lithography Technology (ILT) and its patented level-set methods to reconstruct the defective mask from its inspection image, and then perform simulated AIMS dispositioning on the reconstructed mask. In this technique, named Lithographic Plane Review (LPR), inspection transmitted and reflected light images of the test (i.e. defect) and reference (i.e., corresponding defect-free) regions are provided to the "inversion" engine which then computes the corresponding test and reference mask patterns. An essential input to this engine is a well calibrated model incorporating inspection tool optics, mask processing and 3D effects, and also the subsequent AIMS tool optics to be able to then simulate the aerial image impact of the defects. This flow is equivalent to doing an actual AIMS tool measurement of every defect detected during mask inspection, while at the same time maintaining inspection at high enough resolution. What makes this product usable in mask volume production is the high degree of accuracy of mask defect reconstruction, predicting actual AIMS measurements to within ±4% CD error for > 95% of defects while not missing any OOS (out-of-specification) defect and maintaining high simulation throughput of ≥250 defects/min on Luminescent's distributed computing platform. This technique enables inspection recipes to be setup based on the sensitivity required to detect small but lithographically-significant defects, even if in the process a large number of nuisance defects are detected. LPR is being implemented as an integral part of defect classification for high-volume sub-32nm technology nodes and higher. Furthermore, this technique will be essential to the lithographic disposition of defects detected on EUV masks inspected under non-actinic conditions.

Proceedings Article | 4 November 2005 Paper

Improvement in defect classification efficiency by grouping disposition for reticle inspection

Rick Lai, Luke T. Hsu, Peter Chang, C.H. Ho, Frankie Tsai, Garrett Long, Paul Yu, John Miller, Vincent Hsu, Ellison Chen

Proceedings Volume 5992, 59920B (2005) https://doi.org/10.1117/12.632095

KEYWORDS: Photomasks, Inspection, Reticles, Diffractive optical elements, Manufacturing, Optical proximity correction, Semiconductor manufacturing, Lithography, Intelligence systems, Semiconducting wafers

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Proceedings Article | 28 June 2005 Paper

Implementation of an efficient defect classification methodology for advanced reticle inspection

Paul Yu, Vincent Hsu, Ellison Chen, Rick Lai, Kong Son, Weimin Ma, Peter Chang, Jackie Chen

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617488

KEYWORDS: Inspection, Reticles, Defect detection, Photomasks, Defect inspection, Manufacturing, Process engineering, Sensors, Image processing

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Proceedings Article | 17 December 2003 Paper

Reticle inspection optimization for 90-nm and 130-nm technology nodes using a multibeam UV wavelength inspection tool

Rick Lai, Luke Hsu, Chiun Hong Kung, Johnson Hung, Wei Huang, Chue-San Yoo, Yao-Tsu Huang, Vincent Hsu

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518016

KEYWORDS: Inspection, Calibration, Reticles, Photomasks, Defect detection, Image transmission, Manufacturing, SRAF, Lithography, Defect inspection

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Proceedings Article | 28 August 2003 Paper

Photomask defect tracing, analysis, and reduction with chemically amplified resist process

Cheng-ming Lin, Rick Lai, W. Huang, B. Wang, C. Chen, C. Kung, Chue-San Yoo, Jieh-Jang Chen, Sheng-Cha Lee

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504189

KEYWORDS: Inspection, Particles, Scanning electron microscopy, Chromium, Atomic force microscopy, Dry etching, Photomasks, Contamination, Photoresist processing, Optical proximity correction

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Showing 5 of 11 publications

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