Dr. Jérôme Rêche Profile

Dr. Jérôme Rêche

Advanced Lithography Researcher at CEA-LETI

SPIE Involvement:

Author

Area of Expertise:

Metrology , Microelectronic , Data treatment , Microscopy , X-Ray , Data fusion

Publications (17)

Proceedings Article | 10 April 2024 Poster

Multi-height pillars replication from a grayscale resist master by nanoimprint process

Api Warsono, Diana Fernandez Rodas, Jérôme Rêche, Anaïs De Lehelle D'Affroux, Chiara Sabbione

Proceedings Volume PC12956, PC1295613 (2024) https://doi.org/10.1117/12.3014929

KEYWORDS: Photoresist processing, Nanoimprint lithography, UV optics, Silicon, Silica, Semiconducting wafers, Microlens, Lithography, Grayscale lithography, Etching

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Proceedings Article | 9 April 2024 Poster + Paper

Manufacturing of 3D submicronic structures at wafer scale

Diana Fernandez Rodas, Jérôme Rêche, Ivanie Mendes, Raluca Tiron

Proceedings Volume 12956, 129560L (2024) https://doi.org/10.1117/12.3009978

KEYWORDS: Nanoimprint lithography, Manufacturing, Atomic force microscopy, Electron beam lithography, Deformation, Shrinkage, Semiconducting wafers, Scanning electron microscopy, Photoresist processing, Standards development, Grayscale lithography

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SPIE Journal Paper | 8 March 2024

Cross-evaluation of critical dimension measurement techniques

Timothée Choisnet, Abdelali Hammouti, Vincent Gagneur, Jérôme Reche, Guido Rademaker, Guillaume Freychet, Guillaume Jullien, Julien Ducoté, Patrice Gergaud, Delphine Le Cunff

JM3, Vol. 23, Issue 01, 014002, (March 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.1.014002

KEYWORDS: Critical dimension metrology, Transmission electron microscopy, Cadmium, X-rays, Synchrotrons, Silicon, Semiconducting wafers, Lithography, Scanning electron microscopy, Chromium

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Proceedings Article | 3 October 2023 Presentation + Paper

3D resist master evaluation protocol for nanoimprint lithography

Diana Fernandez Rodas, Jérôme Rêche, Raluca Tiron

Proceedings Volume 12653, 126530F (2023) https://doi.org/10.1117/12.2676111

KEYWORDS: Advanced patterning, Electron beam lithography, Grayscale lithography, Material characterization, Manufacturing, Nanoimprint lithography, Scanning electron microscopy, Adhesion, Ultraviolet radiation, Deformation, Silicon, Interfaces, Atomic force microscopy, Shrinkage

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Proceedings Article | 1 May 2023 Poster + Paper

Overlay performances of wafer scale nanoimprint lithography

Jerome Reche, Api Warsono, Anaïs De Lehelle D'Affroux, Jonas Khan, Sebastian Haumann, Andrea Kneidinger

Proceedings Volume 12497, 124970Q (2023) https://doi.org/10.1117/12.2655105

KEYWORDS: Semiconducting wafers, Nanoimprint lithography, Distortion, Optical alignment, Lithography, Metrology, Industry, Overlay metrology

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Proceedings Article | 1 May 2023 Presentation + Paper

Replication of 3D patterns from a grayscale resist master by nanoimprint process

Api Warsono, Diana Fernandez Rodas, Jérôme Rêche, Anaïs De Lehelle d'Affroux, Sébastien Berard Bergery

Proceedings Volume 12497, 124970A (2023) https://doi.org/10.1117/12.2658384

KEYWORDS: Microlens, Nanoimprint lithography, Photoresist processing, Atomic force microscopy, Scanning electron microscopy, Manufacturing, Critical dimension metrology, Silicon, Printing, Etching

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Proceedings Article | 27 April 2023 Presentation + Paper

Critical dimension measurement: from synchrotron small angle x-ray scattering to industrial optical scatterometry techniques

Timothée Choisnet, Abdelali Hammouti, Vincent Gagneur, Jérôme Reche, Guido Rademaker, Guillaume Freychet, Guillaume Jullien, Julien Ducote, Patrice Gergaud, Delphine Le Cunff

Proceedings Volume 12496, 124961K (2023) https://doi.org/10.1117/12.2657661

KEYWORDS: Transmission electron microscopy, Synchrotrons, Scanning electron microscopy, Critical dimension metrology, Semiconducting wafers, Cadmium, X-rays, Scattering, Lithography, Silicon

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Proceedings Article | 26 May 2022 Presentation + Paper

Multi-branch neural network for hybrid metrology improvement

P. Digraci, M. Besacier, P. Gergaud, G. Rademaker, J. Reche

Proceedings Volume 12053, 120530W (2022) https://doi.org/10.1117/12.2612798

KEYWORDS: Metrology, Neurons, Statistical analysis, Neural networks, Data modeling, Data fusion, Critical dimension metrology, Artificial neural networks

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Proceedings Article | 26 May 2022 Poster + Paper

Pattern customization on 193 immersion lithography by negative tone development process and multiple exposures

Ivanie Mendes, Michael May, Jérôme Rêche, Raluca Tiron, Aurélien Sarrazin, Olivier Dubreuil

Proceedings Volume 12051, 120510Q (2022) https://doi.org/10.1117/12.2614018

KEYWORDS: Reticles, Lithography, Semiconducting wafers, Scanners, Silicon, Overlay metrology, Scanning electron microscopy, Process control, Image processing, Photomasks, Immersion lithography

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Proceedings Article | 25 May 2022 Presentation + Paper

Wafer scale nanoimprint lithography: distortion improvement and stabilization

Jerome Reche, Maxime Argoud, Anaïs De Lehelle D'Affroux, Haidar Al Dujaili, Jonas Khan, Sebastian Haumann, Peter Ledel, Martin Eibelhuber

Proceedings Volume 12054, 1205404 (2022) https://doi.org/10.1117/12.2613788

KEYWORDS: Distortion, Semiconducting wafers, Nanoimprint lithography, Overlay metrology, Standards development, Lithography, Data modeling

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Proceedings Article | 22 February 2021 Poster + Paper

Data fusion by artificial neural network for hybrid metrology development

L. Penlap Woguia, J. Reche, M. Besacier, P. Gergaud, G. Rademaker

Proceedings Volume 11611, 116112L (2021) https://doi.org/10.1117/12.2583590

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Proceedings Article | 22 February 2021 Presentation + Paper

Integration of sub 50 nm features based on EVG SmartNIL for 8-inch substrates

Jérôme Rêche, Maxime Argoud, Anaïs De Lehelle D'Affroux, Khatia Benotmane, Sebastian Haumann, Jonas Khan, Martin Eibelhuber

Proceedings Volume 11610, 116100C (2021) https://doi.org/10.1117/12.2583631

KEYWORDS: Semiconducting wafers, Nanoimprint lithography, Standards development, Scanning electron microscopy, Photoresist processing, Photonics, Optical lithography, Nanotechnology, Metrology, Lithography

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Proceedings Article | 25 March 2020 Paper

Block copolymer line roughness measurement via PSD: application to fingerprint samples

Aurélie Le Pennec, Jérôme Rêche, Patrick Quéméré, Guido Rademaker, Romain Jarnias, Charlotte Bouet, Célia Nicolet, Christophe Navarro, Maxime Argoud, Raluca Tiron

Proceedings Volume 11326, 113261I (2020) https://doi.org/10.1117/12.2551854

KEYWORDS: Line width roughness, Ultraviolet radiation, Edge detection, Polymethylmethacrylate, Directed self assembly, Binary data, Polymerization, Statistical analysis, Software development

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Proceedings Article | 26 March 2019 Presentation + Paper

Application of PSD for the extraction of programmed line roughness from SAXS

Jérôme Reche, Maxime Besacier, Patrice Gergaud, Yoann Blancquaert

Proceedings Volume 10959, 109590U (2019) https://doi.org/10.1117/12.2514919

KEYWORDS: Line width roughness, Scanning electron microscopy, Diffraction, Line edge roughness, Metrology, Fourier transforms, Critical dimension metrology

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Proceedings Article | 19 September 2018 Paper

Manufacturing of roughness standard samples based on ACF/PSD model programming

Jérôme Reche, Maxime Besacier, Patrice Gergaud, Yoann Blancquaert

Proceedings Volume 10775, 1077519 (2018) https://doi.org/10.1117/12.2327095

KEYWORDS: Scanning electron microscopy, Computer programming, Manufacturing, Line width roughness, Lithography, Statistical modeling, Line edge roughness, Critical dimension metrology, Metrology, Edge roughness

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SPIE Journal Paper | 31 July 2018

Programmed line width roughness metrology by multitechniques approach

Jérôme Reche, Maxime Besacier, Patrice Gergaud, Yoann Blancquaert, Guillaume Freychet, Thibault Labbaye

JM3, Vol. 17, Issue 04, 041005, (July 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.041005

KEYWORDS: Metrology, Line width roughness, Critical dimension metrology, Sensors, X-rays, Scanning electron microscopy, Reflectivity, Scattering, Reliability, Manufacturing

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Proceedings Article | 13 March 2018 Presentation + Paper

Programmed LWR metrology by multi-techniques approach

Jérôme Reche, Maxime Besacier, Patrice Gergaud, Yoann Blancquaert, Guillaume Freychet, Thibault Labbaye

Proceedings Volume 10585, 105850F (2018) https://doi.org/10.1117/12.2292169

KEYWORDS: Line width roughness, Metrology, Critical dimension metrology, Reflectivity, Reliability, Scanning electron microscopy, Manufacturing, X-rays, Microelectronics

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Showing 5 of 17 publications

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