Ms. Maki Tanaka Profile

Maki Tanaka

Chief Engineer at Hitachi High-Tech Corp

SPIE Involvement:

Author

Publications (30)

Proceedings Article | 10 April 2024 Poster

Poster

Three-dimensional global uniformity control in plasma etcher using multi parameter profile characterization technique based on CD-SEM image

Makoto Satake, Chisaki Takubo, Tadashi Okumura, Kenji Yasui, Hitoshi Namai, Takahiro Kawasaki, Mayuka Osaki, Maki Tanaka

Proceedings Volume 12955, 129553K (2024) https://doi.org/10.1117/12.3011778

KEYWORDS: Plasma etching, Plasma, 3D image processing, Semiconducting wafers, Critical dimension metrology, Control systems, Temperature control, Semiconductors, Gallium arsenide, Field effect transistors

Proceedings Article | 10 April 2024 Presentation + Paper

Presentation + Paper

Cu pad surface height evaluation technique by in-line SEM for wafer hybrid bonding

Hiroaki Kasai, Mayuka Osaki, Kazuhisa Hasumi, Nobuyuki Mise, Maki Tanaka, Bensu Tunca Altintas, Soon Aik Chew, Janusz Bogdanowicz, Alain Moussa, Mohamed Saib, Boyao Zhang, Anne-Laure Charley

Proceedings Volume 12955, 129551N (2024) https://doi.org/10.1117/12.3008658

KEYWORDS: Copper, Semiconducting wafers, Scanning electron microscopy, Wafer bonding, Sensors, Atomic force microscopy, Signal detection, Image sensors, Chemical mechanical planarization, Target detection

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SPIE Journal Paper | 1 March 2023

Quantification of three-dimensional pattern-shape variation with CD-SEM top-down image

Mayuka Osaki, Kenji Yasui, Maki Tanaka, Hitoshi Namai, Yuki Ojima

JM3, Vol. 22, Issue 02, 021008, (March 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.2.021008

KEYWORDS: Semiconducting wafers, 3D image processing, Scanning electron microscopy, Education and training, Signal detection, Electron beams, Tolerancing, Image analysis, Target detection, Semiconductors

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Proceedings Article | 13 June 2022 Poster

Poster

A method for quantifying the three-dimensional shape of circuit patterns with a top-down CD-SEM image

Kenji Yasui, Mayuka Osaki, Hitoshi Namai, Yuki Ojima, Masami Ikota, Maki Tanaka

Proceedings Volume PC12053, PC120530R (2022) https://doi.org/10.1117/12.2614738

KEYWORDS: 3D metrology, 3D image processing, Scanning electron microscopy, 3D acquisition, Electron microscopes, Semiconducting wafers, Optical lithography, Image processing, Critical dimension metrology, Visualization

Proceedings Article | 26 March 2019 Paper

Paper

Depth measurement technique for extremely deep holes using back-scattered electron images with high voltage CD-SEM

Takahiro Nishihata, Mayuka Osaki, Maki Tanaka, Takuma Yamamoto, Akira Hamaguchi, Chihiro Ida, Yusaku Suzuki

Proceedings Volume 10959, 109591B (2019) https://doi.org/10.1117/12.2514799

KEYWORDS: 3D metrology, Scanning electron microscopy, Monte Carlo methods, Calibration, 3D acquisition, Scattering, Nondestructive evaluation

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SPIE Journal Paper | 1 October 2011

Improved secondary electron extraction efficiency model for accurate measurement of narrow-space patterns using model-based library matching

Chie Shishido, Maki Tanaka, Akira Hamamatsu, Tomoharu Nagao

JM3, Vol. 10, Issue 04, 043017, (October 2011) https://doi.org/10.1117/12.10.1117/1.3664410

KEYWORDS: Scanning electron microscopy, Model-based design, Monte Carlo methods, Calibration, Cadmium, Mathematical modeling, 3D metrology, Scatterometry, Semiconducting wafers, Metrology

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Proceedings Article | 20 April 2011 Paper

Paper

Improved secondary electron extraction efficiency model for accurate measurement of narrow-space patterns using model-based library matching

Chie Shishido, Maki Tanaka, Akira Hamamatsu

Proceedings Volume 7971, 79711S (2011) https://doi.org/10.1117/12.878745

KEYWORDS: Scanning electron microscopy, Calibration, Monte Carlo methods, Model-based design, 3D metrology, Mathematical modeling, Silicon, 3D image processing, Scatterometry, Semiconducting wafers

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Proceedings Article | 20 April 2011 Paper

Paper

Verification and extension of the MBL technique for photo resist pattern shape measurement

Miki Isawa, Maki Tanaka, Hideyuki Kazumi, Chie Shishido, Akira Hamamatsu, Norio Hasegawa, Peter De Bisschop, David Laidler, Philippe Leray, Shaunee Cheng

Proceedings Volume 7971, 79710Z (2011) https://doi.org/10.1117/12.878960

KEYWORDS: Cadmium, Critical dimension metrology, Photoresist materials, Atomic force microscopy, Metrology, Scanning electron microscopy, Finite element methods, Terbium, Semiconducting wafers, Double patterning technology

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Proceedings Article | 20 April 2011 Paper

Paper

Calibration studies of pattern top resist loss detection by CD-SEM for advanced lithography process

Toru Ishimoto, Miki Isawa, Maki Tanaka, Shaunee Cheng

Proceedings Volume 7971, 79712H (2011) https://doi.org/10.1117/12.880916

KEYWORDS: Calibration, Semiconducting wafers, Metrology, Scanning electron microscopy, Photoresist processing, Surface roughness, Atomic force microscopy, Lithography, Process control, Wafer-level optics

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SPIE Journal Paper | 1 January 2011

Accurate measurement of very small line patterns in critical dimension scanning electron microscopy using model-based library matching technique

Chie Shishido, Maki Tanaka, Mayuka Osaki

JM3, Vol. 10, Issue 1, 013010, (January 2011) https://doi.org/10.1117/12.10.1117/1.3541780

KEYWORDS: Critical dimension metrology, Atomic force microscopy, Scanning electron microscopy, Critical dimension scanning electron microscopy, Monte Carlo methods, Model-based design, Silicon, Statistical analysis, Cadmium, Image processing

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Proceedings Article | 2 April 2010 Paper

Paper

Application of model-based library approach to photoresist pattern shape measurement in advanced lithography

Naoki Yasui, Miki Isawa, Toru Ishimoto, Kohei Sekiguchi, Maki Tanaka, Mayuka Osaki, Chie Shishido, Norio Hasegawa, Shaunee Cheng

Proceedings Volume 7638, 76382O (2010) https://doi.org/10.1117/12.846504

KEYWORDS: Photoresist materials, Lithography, Critical dimension metrology, Scanning electron microscopy, Lithographic illumination, Model-based design, Process control, Mathematical modeling, Immersion lithography, Semiconducting wafers

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Proceedings Article | 2 April 2010 Paper

Paper

Study on practical application to pattern top resist loss measurement by CD-SEM for high NA immersion lithography

Toru Ishimoto, Naoki Yasui, Norio Hasegawa, Maki Tanaka, Shaunee Cheng

Proceedings Volume 7638, 76382P (2010) https://doi.org/10.1117/12.846541

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Immersion lithography, Etching, Photoresist processing, Metrology, Lithography, Semiconducting wafers, Finite element methods, Semiconductors

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Proceedings Article | 2 April 2010 Paper

Paper

CD bias reduction in CD-SEM of very small line patterns: sidewall shape measurement using model-based library matching method

Chie Shishido, Maki Tanaka, Mayuka Osaki

Proceedings Volume 7638, 76383I (2010) https://doi.org/10.1117/12.846402

KEYWORDS: Critical dimension metrology, Atomic force microscopy, Scanning electron microscopy, Monte Carlo methods, Silicon, Model-based design, Image processing, Statistical analysis, Cadmium, Scattering

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Proceedings Article | 24 March 2009 Paper

Paper

CD-bias reduction in CD-SEM line-width measurement for the 32-nm node and beyond using the model-based library method

Chie Shishido, Maki Tanaka, Mayuka Osaki

Proceedings Volume 7272, 72722C (2009) https://doi.org/10.1117/12.813948

KEYWORDS: Critical dimension metrology, Atomic force microscopy, Monte Carlo methods, Silicon, Beam shaping, Model-based design, Scanning electron microscopy, Scattering, Silica, Mathematical modeling

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Proceedings Article | 23 March 2009 Paper

Paper

Validation of CD-SEM etching residue evaluation technique for MuGFET structures

Miki Isawa, Maki Tanaka, Tatsuya Maeda, Kenji Watanabe, Tom Vandeweyer, Nadine Collaert, Rita Rooyackers

Proceedings Volume 7272, 72720Q (2009) https://doi.org/10.1117/12.813616

KEYWORDS: Etching, Scanning transmission electron microscopy, Semiconducting wafers, Critical dimension metrology, Manufacturing, Transistors, Field effect transistors, Edge detection, Scanning electron microscopy, Image resolution

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Proceedings Article | 23 March 2009 Paper

Paper

Performance verification of resist loss measurement method using top-view CD-SEM images for hyper-NA lithography

Mayuka Osaki, Maki Tanaka, Chie Shishido, Shaunee Cheng, David Laidler, Monique Ercken, Efrain Altamirano

Proceedings Volume 7272, 727211 (2009) https://doi.org/10.1117/12.813472

KEYWORDS: Etching, Semiconducting wafers, Surface roughness, Finite element methods, Scanning electron microscopy, Lithography, Atomic force microscopy, Critical dimension metrology, Atomic force microscope, Photoresist processing

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Proceedings Article | 16 April 2008 Paper

Paper

Advanced CD-SEM metrology to improve total process control performance for hyper-NA lithography

Mayuka Osaki, Maki Tanaka, Chie Shishido, Toru Ishimoto, Norio Hasegawa, Kohei Sekiguchi, Kenji Watanabe, Shaunee Cheng, David Laidler, Monique Ercken, Efrain Altamirano

Proceedings Volume 6922, 69221B (2008) https://doi.org/10.1117/12.771886

KEYWORDS: Critical dimension metrology, Etching, Photoresist processing, Lithography, Scanning electron microscopy, Semiconducting wafers, Finite element methods, Signal attenuation, Process control, Metrology

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Proceedings Article | 24 March 2008 Paper

Paper

CD bias reduction in CD-SEM linewidth measurements for advanced lithography

Maki Tanaka, Jeroen Meessen, Chie Shishido, Kenji Watanabe, Ingrid Minnaert-Janssen, Peter Vanoppen

Proceedings Volume 6922, 69221T (2008) https://doi.org/10.1117/12.772088

KEYWORDS: Scanning electron microscopy, Atomic force microscopy, Calibration, Critical dimension metrology, Lithography, Image processing, Monte Carlo methods, Model-based design, Mathematical modeling, Gaussian filters

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Proceedings Article | 24 March 2008 Paper

Paper

MuGFET observation and CD measurement by using CD-SEM

Tatsuya Maeda, Maki Tanaka, Miki Isawa, Kenji Watanabe, Norio Hasegawa, Kohei Sekiguchi, Rita Rooyackers, Nadine Collaert, Tom Vandeweyer

Proceedings Volume 6922, 69222P (2008) https://doi.org/10.1117/12.771861

KEYWORDS: Etching, Semiconducting wafers, Transistors, Field effect transistors, Scanning electron microscopy, Scatterometry, 3D metrology, Edge roughness, Metrology, Process control

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Proceedings Article | 24 March 2008 Paper

Paper

Application of model-based library approach to Si3N4 hardmask measurements

Maki Tanaka, Chie Shishido, Wataru Nagatomo, Kenji Watanabe

Proceedings Volume 6922, 69222L (2008) https://doi.org/10.1117/12.772097

KEYWORDS: Atomic force microscopy, Scanning electron microscopy, Scanning transmission electron microscopy, Monte Carlo methods, Critical dimension metrology, Metrology, Calibration, Silicon, Cadmium, Model-based design

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Proceedings Article | 5 April 2007 Paper

Paper

CD-bias evaluation and reduction in CD-SEM linewidth measurements

Maki Tanaka, Chie Shishido, Wataru Nagatomo, Kenji Watanabe

Proceedings Volume 6518, 651848 (2007) https://doi.org/10.1117/12.710803

KEYWORDS: Line edge roughness, Scanning electron microscopy, Monte Carlo methods, Detection and tracking algorithms, Smoothing, Image processing, Signal to noise ratio, Model-based design, Edge detection, Electron beams

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Proceedings Article | 24 March 2006 Paper

Paper

Influence of electron incident angle distribution on CD-SEM linewidth measurements

Maki Tanaka, Chie Shishido, Hiroki Kawada

Proceedings Volume 6152, 61523Z (2006) https://doi.org/10.1117/12.655468

KEYWORDS: Electron beams, Monte Carlo methods, Optical simulations, Scanning electron microscopy, Statistical modeling, Gaussian beams, Error analysis, Beam shaping, Model-based design, Mathematical modeling

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Proceedings Article | 10 May 2005 Paper

Paper

Influence of focus variation on linewidth measurements

Maki Tanaka, John Villarrubia, Andras Vladar

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.599741

KEYWORDS: Beam shaping, Critical dimension metrology, Scanning electron microscopy, Gold, Carbon, Mathematical modeling, Line scan image sensors, Data modeling, Spatial resolution, Detection and tracking algorithms

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Proceedings Article | 10 May 2005 Paper

Paper

Development of beam-tilt angle calibration method for CD-SEM

Katsumi Setoguchi, Hidetoshi Morokuma, Atsushi Miyamoto, Maki Tanaka

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.602010

KEYWORDS: Statistical analysis, Semiconducting wafers, Distortion, Image processing, Scanning electron microscopy, Calibration, Beam analyzers, Ridge detection, Detection and tracking algorithms, Process control

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Proceedings Article | 24 May 2004 Paper

Paper

New technique to reconstruct effective 3D profile from tilt images of CD-SEM

Hidetoshi Morokuma, Atsushi Miyamoto, Maki Tanaka, Masato Kazui, Atsushi Takane

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536445

KEYWORDS: 3D image processing, 3D image reconstruction, Scanning electron microscopy, 3D modeling, Error analysis, Reconstruction algorithms, Semiconductors, Edge detection, Analytical research, 3D metrology

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Proceedings Article | 24 May 2004 Paper

Paper

MPPC technique for gate etch process monitoring using CD-SEM images and its validity verification

Maki Tanaka, Chie Shishido, Yuji Takagi, Hidetoshi Morokuma

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536284

KEYWORDS: Semiconducting wafers, Atomic force microscopy, Scanning electron microscopy, Transistors, 3D metrology, Etching, Process control, Image processing, Control systems, Monte Carlo methods

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Proceedings Article | 2 June 2003 Paper

Paper

Dose and focus estimation using top-down SEM images

Chie Shishido, Ryo Nakagaki, Maki Tanaka, Yuji Takagi, Hidetoshi Morokuma, Osamu Komuro, Hiroyoshi Mori

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483673

KEYWORDS: Data modeling, Photoresist materials, Scanning electron microscopy, Error analysis, Semiconducting wafers, Finite element methods, Optical lithography, Image processing, Tolerancing, Semiconductors

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Proceedings Article | 2 June 2003 Paper

Paper

Cross-sectional gate feature identification method using top-down SEM images

Maki Tanaka, Chie Shishido, Yuji Takagi, Hidetoshi Morokuma, Osamu Komuro, Hiroyoshi Mori

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483685

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Etching, Process control, Algorithm development, Critical dimension metrology, 3D metrology, Monte Carlo methods, Metrology, Control systems

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Proceedings Article | 16 July 2002 Paper

Paper

Characterizing cross-sectional profile variations by using multiple parameters extracted from top-down SEM images

Chie Shishido, Yuji Takagi, Maki Tanaka, Osamu Komuro, Hidetoshi Morokuma, Katsuhiro Sasada

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473507

KEYWORDS: Lithography, Scanning electron microscopy, Photoresist materials, Semiconductors, Image processing, Finite element methods, Critical dimension metrology, Semiconducting wafers, Feature extraction, Optical simulations

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Proceedings Article | 2 June 2000 Paper

Paper

New voltage-contrast imaging method for detection of electrical failures

Mari Nozoe, Hidetoshi Nishiyama, Hiroyuki Shinada, Maki Tanaka

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386512

KEYWORDS: Oxides, Electron beams, Resistance, Inspection, Semiconducting wafers, Imaging systems, Scanning electron microscopy, Transmission electron microscopy, Wafer inspection, Analytical research

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Showing 5 of 30 publications

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