This manuscript shows the relationship between defectivity of a typical chemo-epitaxy sequence and the DSA-specific materials, namely the mat, the brush and the block co-polymer. We demonstrate that the density of assembly defects in a line-space DSA flow, namely the dislocations and 1-period bridges have a direct correlation to certain parameters in the synthesis sequence of these materials. The primary focus of this manuscript is on identifying, controlling and reproducing the defects-critical parameters in the block co-polymer synthesis process for a stable and low defect performance of DSA flows.
High-defect density in thermodynamics driven directed self-assembly (DSA) flows has been a major cause of concern for a while and several questions have been raised about the relevance of DSA in high-volume manufacturing. The major questions raised in this regard are: (1) What is the intrinsic level of DSA-induced defects? (2) Can we isolate the DSA-induced defects from the other processes-induced defects? (3) How much do the DSA materials contribute to the final defectivity and can this be controlled? (4) How can we understand the root causes of the DSA-induced defects and their kinetics of annihilation? (5) Can we have block copolymer anneal durations that are compatible with standard CMOS fabrication techniques (in the range of minutes) with low-defect levels? We address these important questions and identify the issues and the level of control needed to achieve a stable DSA defect performance.
High defect density in thermodynamics driven DSA flows has been a major cause of concern for a while and several questions have been raised about the relevance of DSA in high volume manufacturing. The major questions raised in this regard are: 1. What is the intrinsic level of DSA-induced defects, 2. Can we isolate the DSA-induced defects from the other processes-induced defects, 3. How much do the DSA materials contribute to the final defectivity and can this be controlled, 4. How can we understand the root causes of the DSA-induced defects, their kinetics of annihilation and finally, 5. Can we have block co-polymer anneal durations that are compatible with standard CMOS fabrication techniques (in the range of minutes) with low defect levels. This manuscript addresses these important questions and identifies the issues and the level of control needed to achieve a stable DSA defect performance.
Next-generation lithography technology is required to meet the needs of advanced design nodes. Directed Self Assembly (DSA) is gaining momentum as an alternative or complementary technology to EUV lithography. We investigate defectivity on a 2xnm patterning of contacts for 25nm or less contact hole assembly by grapho epitaxy DSA technology with guide patterns printed using immersion ArF negative tone development. This paper discusses the development of an analysis methodology for DSA with optical wafer inspection, based on defect source identification, sampling and filtering methods supporting process development efficiency of DSA processes and tools.
Directed Self-Assembly (DSA) is considered as a potential patterning solution for future generation devices. One of the
most critical challenges for translating DSA into high volume manufacturing is to achieve low defect density in the DSA
patterning process. The defect inspection capability is fundamental to defect reduction in any process, particularly the
DSA process, as it provides engineers with information on the numbers and types of defects. While the challenges of
other candidates of new generation lithography are well known (for example, smaller size, noise level due to LER etc.),
the DSA process causes certain defects that are unique. These defects are nearly planar and in a material which produces
very little defect scattering signal. These defects, termed as “dislocation” and “disclination” have unique shapes and have
very little material contrast. While large clusters of these unique defects are easy to detect, single dislocation and
disclination defects offer considerable challenge during inspection. In this investigation, etching the DSA pattern into a
silicon (Si) substrate structure to enhance defect signal and Signal-to-Noise Ratio (SNR) is studied. We used a Rigorous
Coupled-Wave Analysis (RCWA) method for solving Maxwell’s equations to simulate the DSA unique defects and
calculate inspection parameters. Controllable inspection parameters include various illumination and collection
apertures, wavelength band, polarization, noise filtering, focus, pixel size, and signal processing. From the RCWA
simulation, we compared SNR between “Post-SiN etch” and “Post-SiN+Si-substrate etch” steps. The study is also
extended to investigate wafer-level data at post etch inspection. Both the simulations and inspection tool results showed
dramatic signal and SNR improvements when the pattern was etched into the SiN+Si substrate allowing capture of DSA
unique defect types.
Directed Self-Assembly (DSA) of Block Co-Polymers (BCP) has become an intense field of study as a potential patterning solution for future generation devices. The most critical challenges that need to be understood and controlled include pattern placement accuracy, achieving low defectivity in DSA patterns and how to make chip designs DSA-friendly. The DSA program at imec includes efforts on these three major topics. Specifically, in this paper the progress in DSA defectivity within the imec program will be discussed. In previous work, defectivity levels of ~560 defects/cm2 were reported and the root causes for these defects were identified, which included particle sources, material interactions and pre-pattern imperfections. The specific efforts that have been undertaken to reduce defectivity in the line/space chemoepitaxy DSA flow that is used for the imec defectivity studies are discussed. Specifically, control of neutral layer material and improved filtration during the block co-polymer manufacturing have enabled a significant reduction in the defect performance. In parallel, efforts have been ongoing to enhance the defect inspection capabilities and allow a high capture rate of the small defects. It is demonstrated that transfer of the polystyrene patterns into the underlying substrate is critical for detecting the DSA-relevant defect modes including microbridges and small dislocations. Such pattern transfer enhances the inspection sensitivity by ~10x. Further improvement through process optimization allows for substantial defectivity reduction.
This paper discusses the defect density detection and analysis methodology using advanced optical wafer inspection capability to enable accelerated development of a DSA process/process tools and the required inspection capability to monitor such a process. The defectivity inspection methodologies are optimized for grapho epitaxy directed self-assembly (DSA) contact holes with 25 nm sizes. A defect test reticle with programmed defects on guide patterns is designed for improved optimization of defectivity monitoring. Using this reticle, resist guide holes with a variety of sizes and shapes are patterned using an ArF immersion scanner. The negative tone development (NTD) type thermally stable resist guide is used for DSA of a polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer (BCP). Using a variety of defects intentionally made by changing guide pattern sizes, the detection rates of each specific defectivity type has been analyzed. It is found in this work that to maximize sensitivity, a two pass scan with bright field (BF) and dark field (DF) modes provides the best overall defect type coverage and sensitivity. The performance of the two pass scan with BF and DF modes is also revealed by defect analysis for baseline defectivity on a wafer processed with nominal process conditions.
As design rule shrinks, it is essential that the capability to detect smaller and smaller defects should improve. There is
considerable effort going on in the industry to enhance Immersion Lithography using DSA for 14 nm design node and
below. While the process feasibility is demonstrated with DSA, material issues as well as process control requirements
are not fully characterized. The chemical epitaxy process is currently the most-preferred process option for frequency
multiplication and it involves new materials at extremely small thickness. The image contrast of the lamellar Line/Space
pattern at such small layer thickness is a new challenge for optical inspection tools. In this investigation, the focus is on the capability for optical inspection systems to capture DSA unique defects such as dislocations and disclination clusters over the system and wafer noise. The study is also extended to investigate wafer level data at multiple process steps and determining contribution from each process step and materials using ‘Defect Source Analysis’ methodology. The added defect pareto and spatial distributions of added defects at each process step are discussed.
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