Dr. Geng Han Profile

Dr. Geng Han

Advisory Engineer at IBM Thomas J Watson Research Ctr

SPIE Involvement:

Author

Publications (19)

Proceedings Article | 17 April 2020 Presentation + Paper

Dual tone sub-resolution assist features to improve corner rounding

Cheng Chi, Hao Tang, Oseo Park, Jing Xue, Jing Guo, Geng Han, Charlie King, Jeff Shearer, Sean Burns

Proceedings Volume 11327, 113270E (2020) https://doi.org/10.1117/12.2550834

KEYWORDS: SRAF, Photomasks, Semiconducting wafers, Optical proximity correction, Data modeling, Yield improvement, Optics manufacturing, Optical lithography, Deep ultraviolet, Logic

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Proceedings Article | 20 March 2018 Presentation + Paper

Line edge roughness reduction for 7nm metals

Zheng Chen, Steven McDermott, Christopher Ordonio, Ao Chen, Bradley Morgenfeld, Geng Han

Proceedings Volume 10587, 1058708 (2018) https://doi.org/10.1117/12.2297424

KEYWORDS: Line edge roughness, Etching, Lithography, Optical lithography, Photoresist processing, 193nm lithography

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Proceedings Article | 20 March 2018 Paper

Pre-PDK block-level PPAC assessment of technology options for sub-7nm high-performance logic

L. Liebmann, G. Northrop, M. Facchini, L. Riviere Cazaux, Z. Baum, N. Nakamoto, K. Sun, D. Chanemougame, G. Han, V. Gerousis

Proceedings Volume 10588, 1058808 (2018) https://doi.org/10.1117/12.2297634

KEYWORDS: Metals, Logic, Reliability, New and emerging technologies, Optical lithography, Manufacturing, Electronic design automation

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Proceedings Article | 24 March 2017 Presentation + Paper

Vote-taking for EUV lithography: a radical approach to mitigate mask defects

Timothy Brunner, Melih Ozlem, Geng Han, Jed Rankin, Obert Wood, Erik Verduijn

Proceedings Volume 10143, 1014313 (2017) https://doi.org/10.1117/12.2258656

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Reflectivity, Multilayers, Coating, Molybdenum, Silicon, Pellicles, Semiconducting wafers, Scanning electron microscopy, Bridges, Reticles, Opacity, High volume manufacturing

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Proceedings Article | 18 March 2016 Paper

EUV patterning successes and frontiers

Nelson Felix, Dan Corliss, Karen Petrillo, Nicole Saulnier, Yongan Xu, Luciana Meli, Hao Tang, Anuja De Silva, Bassem Hamieh, Martin Burkhardt, Yann Mignot, Richard Johnson, Chris Robinson, Mary Breton, Indira Seshadri, Derren Dunn, Stuart Sieg, Eric Miller, Genevieve Beique, Andre Labonte, Lei Sun, Geng Han, Erik Verduijn, Eunshoo Han, Bong Cheol Kim, Jongsu Kim, Koichi Hontake, Lior Huli, Corey Lemley, Dave Hetzer, Shinichiro Kawakami, Koichi Matsunaga

Proceedings Volume 9776, 97761O (2016) https://doi.org/10.1117/12.2219894

KEYWORDS: Extreme ultraviolet, Optical lithography, Lithography, Extreme ultraviolet lithography, Oxides, Neodymium, Ions, Etching

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Proceedings Article | 28 March 2014 Paper

Demonstrating production quality multiple exposure patterning aware routing for the 10NM node

Lars Liebmann, Vassilios Gerousis, Paul Gutwin, Mike Zhang, Geng Han, Brian Cline

Proceedings Volume 9053, 905309 (2014) https://doi.org/10.1117/12.2045958

KEYWORDS: Photomasks, Optical lithography, Metals, Double patterning technology, Etching, Image processing, Manufacturing, Lithography, Clocks, Image quality

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SPIE Journal Paper | 1 January 2010

Lithographic qualification of new opaque MoSi binary mask blank for the 32-nm node and beyond

Gregory McIntyre, Michael Hibbs, Jaione Tirapu-Azpiroz, Geng Han, Scott Halle, Thomas Faure, Ryan Deschner, Bradley Morgenfeld, Sridhar Ramaswamy, Alfred Wagner

JM3, Vol. 9, Issue 01, 013010, (January 2010) https://doi.org/10.1117/12.10.1117/1.3295712

KEYWORDS: Photomasks, Binary data, Optical proximity correction, Lithography, Opacity, Semiconducting wafers, Data modeling, Electromagnetism, Calibration, Phase shifting

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Proceedings Article | 16 March 2009 Paper

Overcoming the challenges of 22-nm node patterning through litho-design co-optimization

Martin Burkhardt, J. C. Arnold, Z. Baum, S. Burns, J. Chang, J. Chen, J. Cho, V. Dai, Y. Deng, S. Halle, G. Han, S. Holmes, D. Horak, S. Kanakasabapathy, R. H. Kim, A. Klatchko, C. S. Koay, A. Krasnoperova, Y. Ma, E. McLellan, K. Petrillo, S. Schmitz, C. Tabery, Y. Yin, L. Zhuang, Y. Zou, J. Kye, V. Paruchuri, S. Mansfield, C. Spence, M. Colburn

Proceedings Volume 7274, 727404 (2009) https://doi.org/10.1117/12.814433

KEYWORDS: Etching, Lithography, Printing, Optical lithography, Double patterning technology, Resolution enhancement technologies, Logic, Metals, Photomasks, Tolerancing

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Proceedings Article | 1 April 2008 Paper

32 nm logic patterning options with immersion lithography

K. Lai, S. Burns, S. Halle, L. Zhuang, M. Colburn, S. Allen, C. Babcock, Z. Baum, M. Burkhardt, V. Dai, D. Dunn, E. Geiss, H. Haffner, G. Han, P. Lawson, S. Mansfield, J. Meiring, B. Morgenfeld, C. Tabery, Y. Zou, C. Sarma, L. Tsou, W. Yan, H. Zhuang, D. Gil, D. Medeiros

Proceedings Volume 6924, 69243C (2008) https://doi.org/10.1117/12.784107

KEYWORDS: Photomasks, Double patterning technology, Logic, Lithography, Etching, Optical lithography, Optical proximity correction, Immersion lithography, Printing, Image processing

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The semiconductor industry faces a lithographic scaling limit as the industry completes the transition to 1.35 NA immersion lithography. Both high-index immersion lithography and EUV lithography are facing technical challenges and commercial timing issues. Consequently, the industry has focused on enabling double patterning technology (DPT) as a means to circumvent the limitations of Rayleigh scaling. Here, the IBM development alliance demonstrate a series of double patterning solutions that enable scaling of logic constructs by decoupling the pattern spatially through mask design or temporally through innovative processes. These techniques have been successfully employed for early 32nm node development using 45nm generation tooling. Four different double patterning techniques were implemented. The first process illustrates local RET optimization through the use of a split reticle design. In this approach, a layout is decomposed into a series of regions with similar imaging properties and the illumination conditions for each are independently optimized. These regions are then printed separately into the same resist film in a multiple exposure process. The result is a singly developed pattern that could not be printed with a single illumination-mask combination. The second approach addresses 2D imaging with particular focus on both line-end dimension and linewidth control [1]. A double exposure-double etch (DE2) approach is used in conjunction with a pitch-filling sacrificial feature strategy. The third double exposure process, optimized for via patterns also utilizes DE2. In this method, a design is split between two separate masks such that the minimum pitch between any two vias is larger than the minimum metal pitch. This allows for final structures with vias at pitches beyond the capability of a single exposure. In the fourth method,, dark field double dipole lithography (DDL) has been successfully applied to BEOL metal structures and has been shown to be overlay tolerant [6]. Collectively, the double patterning solutions developed for early learning activities at 32nm can be extended to 22nm applications.

Proceedings Article | 22 March 2008 Paper

Challenges of implementing contour modeling in 32nm technology

Daniel Fischer, Geng Han, James Oberschmidt, Yong Wah Cheng, Jae Yeol Maeng, Charles Archie, Wei Lu, Cyrus Tabery

Proceedings Volume 6922, 69220A (2008) https://doi.org/10.1117/12.775444

KEYWORDS: Calibration, Scanning electron microscopy, Metrology, Optical proximity correction, Critical dimension metrology, Cadmium, Data modeling, Line edge roughness, Tolerancing, Systems modeling

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SPIE Journal Paper | 1 July 2007

Through-process modeling for design-for-manufacturability applications

Scott Mansfield, Geng Han, Lars Liebmann

JM3, Vol. 6, Issue 03, 031007, (July 2007) https://doi.org/10.1117/12.10.1117/1.2774987

KEYWORDS: Optical proximity correction, Design for manufacturing, Data modeling, Process modeling, Image processing, Photoresist materials, Photomasks, Calibration, Lithography, Model-based design

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Proceedings Article | 4 April 2007 Paper

Statistical optimization of sampling plan and its relation to OPC model accuracy

Geng Han, Andrew Brendler, Scott Mansfield, Jason Meiring

Proceedings Volume 6518, 651808 (2007) https://doi.org/10.1117/12.712725

KEYWORDS: Semiconducting wafers, Optical proximity correction, Error analysis, Data modeling, Statistical modeling, Calibration, Scanning electron microscopy, Statistical analysis, Optimization (mathematics), Critical dimension metrology

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Proceedings Article | 27 March 2007 Paper

Modeling polarization for hyper-NA lithography tools and masks

Kafai Lai, Alan Rosenbluth, Geng Han, Jaione Tirapu-Azpiroz, Jason Meiring, Aksel Goehnermeier, Bernhard Kneer, Michael Totzeck, Laurens de Winter, Wim de Boeij, Mark van de Kerkhof

Proceedings Volume 6520, 65200D (2007) https://doi.org/10.1117/12.712272

KEYWORDS: Polarization, Photomasks, Lithography, Optical proximity correction, Diffraction, Birefringence, Pellicles, Critical dimension metrology, Optical lithography, Thin films

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Proceedings Article | 21 March 2007 Paper

Lithography simulation in DfM: achievable accuracy versus requirements

Scott Mansfield, Ioana Graur, Geng Han, Jason Meiring, Lars Liebmann, Dureseti Chidambarrao

Proceedings Volume 6521, 652106 (2007) https://doi.org/10.1117/12.712437

KEYWORDS: Design for manufacturing, Process modeling, Optical proximity correction, Lithography, Manufacturing, Photomasks, Resolution enhancement technologies, Data modeling, Semiconducting wafers, Etching

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Proceedings Article | 24 March 2006 Paper

Model-based calculation of weighting in OPC model calibration

Mohamed Talbi, Amr Abdo, Daniel Fischer, Geng Han, Scott Mansfield, James Oberschmidt, Ramya Viswanathan

Proceedings Volume 6152, 615202 (2006) https://doi.org/10.1117/12.656568

KEYWORDS: Optical proximity correction, Data modeling, Calibration, Scanning electron microscopy, Statistical modeling, Model-based design, Error analysis, Metrology, Statistical analysis, Computer simulations

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Proceedings Article | 21 March 2006 Paper

Integration of the retical systematic CD errors into an OPC modeling and correction

Geng Han, Scott Mansfield, Azalia Krasnoperova

Proceedings Volume 6154, 61543I (2006) https://doi.org/10.1117/12.657194

KEYWORDS: Optical proximity correction, Data modeling, Photomasks, Critical dimension metrology, Calibration, Process modeling, Semiconducting wafers, Model-based design, Reticles, Control systems

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Proceedings Article | 14 March 2006 Paper

Through-process modeling in a DfM environment

Scott Mansfield, Geng Han, Mohamed Al-Imam, Rami Fathy

Proceedings Volume 6156, 615603 (2006) https://doi.org/10.1117/12.658049

KEYWORDS: Optical proximity correction, Design for manufacturing, Process modeling, Data modeling, Image processing, Photomasks, Calibration, Photoresist materials, Lithography, Model-based design

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Proceedings Article | 13 March 2006 Paper

Reducing DfM to practice: the lithography manufacturability assessor

Lars Liebmann, Scott Mansfield, Geng Han, James Culp, Jason Hibbeler, Roger Tsai

Proceedings Volume 6156, 61560K (2006) https://doi.org/10.1117/12.657139

KEYWORDS: Manufacturing, Lithography, Design for manufacturing, Failure analysis, Metals, Resolution enhancement technologies, Optical proximity correction, Error analysis, Solids, Photomasks

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Proceedings Article | 20 August 2001 Paper

New results in high-energy proximity x-ray lithography

Mumit Khan, Geng Han, Juan Maldonado, Franco Cerrina

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436639

KEYWORDS: Photomasks, Photons, Electrons, Absorption, Diffraction, X-ray lithography, Diamond, Silicon, Printing, Semiconducting wafers

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Showing 5 of 19 publications

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