Dr. Stuart Young Profile

Dr. Stuart Young

Product Manager at ASML Netherlands BV

SPIE Involvement:

Author

Stuart Young has a PhD in solid state physics from Glasgow University and has been working in ASML since 1997 primarily in product management and other customer facing roles. His product responsibilities have included i-line, KrF, ArF, ArFi lithography tools, Yieldstar metrology tools and most recently EUV systems.

Proceedings Article | 10 April 2024 Presentation

0.33 NA EUV systems for high-volume manufacturing

Peter Klomp, Roderik van Es, Stuart Young, Christophe Smeets

Proceedings Volume PC12953, PC129530O (2024) https://doi.org/10.1117/12.3014165

KEYWORDS: High volume manufacturing, Extreme ultraviolet, Scanners, Sustainability, Semiconducting wafers, Reliability, Overlay metrology, Logic devices, Critical dimension metrology, Control systems

Read Abstract +

Proceedings Article | 22 November 2023 Presentation

0.33 NA EUV systems for high volume manufacturing

Stuart Young, Pieter Gunter, Emiel Eussen, Christophe Smeets, Roderik van Es

Proceedings Volume PC12750, PC127500N (2023) https://doi.org/10.1117/12.2692698

Read Abstract +

Proceedings Article | 28 April 2023 Presentation + Paper

0.33 NA EUV systems for high volume manufacturing

Christophe Smeets, Nico Benders, Frank Bornebroek, Joe Carbone, Roderik van Es, Arthur Minnaert, Guido Salmaso, Stuart Young

Proceedings Volume 12494, 1249406 (2023) https://doi.org/10.1117/12.2658046

KEYWORDS: Extreme ultraviolet, High volume manufacturing, Semiconducting wafers, Carbon, Wavefront errors, Wavefront aberrations, Semiconductors, Scanners

Read Abstract +

Proceedings Article | 8 March 2016 Paper

Improving focus performance at litho using diffraction-based focus metrology, novel calibration methods, interface, and control loop

Jiarui Hu, Y. L. Chen, K. H. Chen, Brian Lee, Frankie Tsai, C. M. Ke, C. H. Liao, Desmond Ngo, Benny Gosali, Robin Tijssen, Vincent Huang, Ward Tu, Marc Noot, Maryana Escalante Marun, Christian Leewis, Carlo Luijten, Frank Staals, Martijn Van Veen, Francois Furthner, Stuart Young, Kaustuve Bhattacharyya

Proceedings Volume 9778, 977829 (2016) https://doi.org/10.1117/12.2220373

KEYWORDS: Metrology, Calibration, Scanners, Process control, Interfaces, Optical lithography, Semiconducting wafers, Photoresist materials, Finite element methods, Inspection, Data modeling, Diffraction

Read Abstract +

Proceedings Article | 19 March 2015 Paper

Intra-field patterning control using high-speed and small-target optical metrology of CD and focus

Hugo Cramer, Stefan Petra, Bastiaan Onne Fagginger Auer, Henk-Jan Smilde, Baukje Wisse, Steven Welch, Stefan Kruijswijk, Paul Hinnen, Bart Segers, Christian Leewis, Frank Staals, Maryana Escalante Marun, Stuart Young, Wei Guo, Arie den Boef

Proceedings Volume 9424, 94241F (2015) https://doi.org/10.1117/12.2085957

KEYWORDS: Semiconducting wafers, Metrology, Etching, Critical dimension metrology, Scanners, Scatterometry, Optical lithography, Optical metrology, Computer simulations, Overlay metrology

Read Abstract +

Proceedings Article | 16 April 2012 Paper

NXE:3100 full wafer imaging performance and budget verification

Eelco van Setten, Koen van Ingen Schenau, Mark O'Mahony, Thijs Hollink, Friso Wittebrood, Natalia Davydova, Mark Eurlings, Kees Feenstra, Jo Finders, Mircea Dusa, Stuart Young

Proceedings Volume 8352, 835205 (2012) https://doi.org/10.1117/12.918495

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Imaging systems, Reticles, Extreme ultraviolet, Electroluminescence, Critical dimension metrology, Lithography, Scanning electron microscopy

Read Abstract +

Proceedings Article | 23 March 2012 Paper

From performance validation to volume introduction of ASML's NXE platform

Hans Meiling, Wim de Boeij, Frank Bornebroek, Noreen Harned, Ivo de Jong, Peter Kűrz, Martin Lowisch, Henk Meijer, David Ockwell, Rudy Peeters, Eelco van Setten, Judon Stoeldraijer, Christian Wagner, Stuart Young, Ron Kool

Proceedings Volume 8322, 83221G (2012) https://doi.org/10.1117/12.916971

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Extreme ultraviolet, Scanners, Mirrors, Photomasks, Particles, Overlay metrology, Line width roughness

Read Abstract +

Proceedings Article | 8 April 2011 Paper

Deep ultraviolet out-of-band contribution in extreme ultraviolet lithography: predictions and experiments

Gian Lorusso, Natalia Davydova, Mark Eurlings, Cemil Kaya, Yue Peng, Kees Feenstra, Theodore Fedynyshyn, Oliver Natt, Peter Huber, Christoph Zaczek, Stuart Young, Paul Graeupner, Eric Hendrickx

Proceedings Volume 7969, 79692O (2011) https://doi.org/10.1117/12.879381

KEYWORDS: Deep ultraviolet, Extreme ultraviolet, Photomasks, Aluminum, Reflectivity, Extreme ultraviolet lithography, Semiconducting wafers, Plasma, Photoresist materials, Data modeling

Read Abstract +

Extreme ultraviolet lithography (EUVL) sources emit a broad spectrum of wavelengths ranging from EUV to DUV and beyond. If the deep ultraviolet (DUV) reaches the wafer it will affect imaging performance by exposing the photoresist. Hence it is critical to determine the amount of DUV out of band (OoB) present in a EUVL tool, as well as its effect on the printed features on the wafer. In this study we investigate the effect of DUV OoB in EUVL. A model is developed in order to be able to quantify the DUV/EUV ratio at wafer level and all the required input parameters are estimated in the range from 140 to 400nm, as well as for the EUV at 13.5nm. The transmission of the optical system was estimated based on the optical design and reflectivity measurements of the mirrors. The mask reflectivity for multilayer (ML) and absorber was measured at wavelengths down to 140 nm and for EUV. The sensitivity to EUV and DUV for a variety of resist platforms was measured at 13.5 nm, 157 nm, 193 nm, 248 nm and 365 nm. The source spectra were also measured. By using these inputs, it was possible to estimate the DUV/EUV ratio for two different ASML tool configurations, the EUV Alpha Demo Tool and the NXE:3100. Both NXE:3100 with LPP (laser produced plasma) source and Alpha Demo Tool with DPP (discharge produced plasma) source show less than 1% DUV/EUV ratio in resist. The modeling predictions were compared to experimental results. A methodology is introduced to measure the DUV/EUV ratio at wafer level in situ. With this aim, an aluminum coated mask was fabricated and its reflectivity was qualified in both EUV and DUV wavelength range. By comparing the dose to clear exposures of a reflective blank and of the aluminum mask, it is possible to quantify the DUV/EUV ratio. The experimental results are in order of magnitude agreement with modeling predictions. The proposed experimental approach can be used to benchmark the DUV sensitivity of different resist platforms and may be used to monitor DUV OoB.

Proceedings Article | 7 April 2011 Paper

EUV lithography at chipmakers has started: performance validation of ASML's NXE:3100

Christian Wagner, Jose Bacelar, Noreen Harned, Erik Loopstra, Stef Hendriks, Ivo de Jong, Peter Kuerz, Leon Levasier, Mark van de Kerkhof, Martin Lowisch, Hans Meiling, David Ockwell, Rudy Peeters, Eelco van Setten, Judon Stoeldraijer, Stuart Young, John Zimmerman, Ron Kool

Proceedings Volume 7969, 79691F (2011) https://doi.org/10.1117/12.878603

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Overlay metrology, Optical proximity correction, Manufacturing, Extreme ultraviolet, Contamination, High volume manufacturing, Optics manufacturing

Read Abstract +

Proceedings Article | 4 December 2008 Paper

Lithography performance and simulation accuracy at different polarization states for sub 40nm node

Ki-Yeop Park, Ho-young Kang, Gratiela Isai, Khalid Elbattay, Peter van Oorschot, Stuart Young, Seung-Chul Oh, Young-Hong Min, Sung-Goo Hong, Youn-Tak Park

Proceedings Volume 7140, 71403N (2008) https://doi.org/10.1117/12.804732

KEYWORDS: Polarization, Nanoimprint lithography, Photomasks, 3D image processing, 3D modeling, Chromium, 3D displays, Lithography, Computer simulations, Device simulation

Read Abstract +

Showing 5 of 10 publications

Keywords/Phrases

Search In:

Publication Years