Mr. Koen van Ingen Schenau Profile

Koen van Ingen Schenau

at ASML Netherlands BV

SPIE Involvement:

Author

Publications (33)

Proceedings Article | 13 March 2018 Paper

Paper

Assessment of local variability by high-throughput e-beam metrology for prediction of patterning defect probabilities

Stefan Hunsche, Roy Anunciado, Fuming Wang , Antonio Corradi , Junwei Wei, Yongjun Wang, Wei Fang, Anton van Oosten, Koen van Ingen Schenau, Hung Yu Tien, Peng Tang, Patrick Wong, Bram Slachter

Proceedings Volume 10585, 1058525 (2018) https://doi.org/10.1117/12.2297603

KEYWORDS: Semiconducting wafers, Stochastic processes, Scanning electron microscopy, Metrology, Electron beam lithography, Photomasks, Inspection, Critical dimension metrology, Optical proximity correction, Deep ultraviolet

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Proceedings Article | 20 October 2016 Paper

Paper

Anamorphic imaging at high-NA EUV: mask error factor and interaction between demagnification and lithographic metrics

Gerardo Bottiglieri, Thorsten Last, Alberto Colina, Eelco van Setten, Gijsbert Rispens, Jan van Schoot, Koen van Ingen Schenau

Proceedings Volume 10032, 100320B (2016) https://doi.org/10.1117/12.2250630

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Extreme ultraviolet lithography, Nanoimprint lithography, Semiconducting wafers, Reticles, Reflectivity, Scanners, Image quality

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Proceedings Article | 18 March 2016 Paper

Paper

EUV high-NA scanner and mask optimization for sub-8nm resolution

Jan van Schoot, Koen van Ingen Schenau, Kars Troost, John Zimmerman, Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser, Gerardo Bottiglieri

Proceedings Volume 9776, 97761I (2016) https://doi.org/10.1117/12.2220150

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Reticles, Scanners, Semiconducting wafers, Source mask optimization, Wafer-level optics, Lithography, Imaging systems, Extreme ultraviolet, Neodymium, Ions

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Proceedings Article | 16 November 2015 Paper

Paper

EUV High-NA scanner and mask optimization for sub 8 nm resolution

Jan van Schoot, Koen van Ingen Schenau, Kars Troost, John Zimmerman, Sascha Migura, Jens Timo Neumann, Bernhard Kneer, Winfried Kaiser, Gerardo Bottiglieri

Proceedings Volume 9635, 963503 (2015) https://doi.org/10.1117/12.2202258

KEYWORDS: Extreme ultraviolet lithography, Scanners, Photomasks, Reticles, Image resolution, Lithography, Wafer-level optics, Semiconducting wafers, Source mask optimization, EUV optics, Imaging systems, Nanoimprint lithography, Ions, Neodymium

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Proceedings Article | 4 September 2015 Paper

Paper

Imaging performance of the EUV high NA anamorphic system

Koen van Ingen Schenau, Gerardo Bottiglieri, Jan van Schoot, Jens-Timo Neumann, Matthias Roesch

Proceedings Volume 9661, 96610S (2015) https://doi.org/10.1117/12.2195476

KEYWORDS: Photomasks, Imaging systems, Extreme ultraviolet, Nanoimprint lithography, Reticles, Semiconducting wafers, Electroluminescence, Ions, Nickel, Logic

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Proceedings Article | 16 March 2015 Paper

Paper

Imaging performance of EUV lithography optics configuration for sub-9nm resolution

Jens Timo Neumann, Matthias Rösch, Paul Gräupner, Sascha Migura, Bernhard Kneer, Winfried Kaiser, Koen van Ingen Schenau

Proceedings Volume 9422, 94221H (2015) https://doi.org/10.1117/12.2175658

KEYWORDS: Reticles, Imaging systems, Semiconducting wafers, Photomasks, Diffraction, Lithography, Extreme ultraviolet lithography, Image resolution, Source mask optimization, EUV optics

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Proceedings Article | 16 March 2015 Paper

Paper

EUV lithography scanner for sub-8nm resolution

Jan van Schoot, Koen van Ingen Schenau, Sascha Migura, Chris Valentin

Proceedings Volume 9422, 94221F (2015) https://doi.org/10.1117/12.2087502

KEYWORDS: Photomasks, Semiconducting wafers, Imaging systems, Extreme ultraviolet, Lithography, Extreme ultraviolet lithography, Nanoimprint lithography, Actuators, Scanners, Projection systems

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Proceedings Article | 17 April 2014 Paper

Paper

EUV source-mask optimization for 7nm node and beyond

Frank Driessen, Xiaofeng Liu, Rafael Howell, Stephen Hsu, Kaiyu Yang, Keith Gronlund, Hua-Yu Liu, Steven Hansen, Koen van Ingen Schenau, Thijs Hollink, Paul van Adrichem, Kars Troost, Jörg Zimmermann, Oliver Schumann, Christoph Hennerkes, Paul Gräupner

Proceedings Volume 9048, 90480Q (2014) https://doi.org/10.1117/12.2047584

KEYWORDS: Source mask optimization, Photomasks, Extreme ultraviolet, Scanners, Fiber optic illuminators, 3D modeling, Optimization (mathematics), Extreme ultraviolet lithography, Deep ultraviolet, Algorithm development

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Proceedings Article | 16 April 2012 Paper

Paper

NXE:3100 full wafer imaging performance and budget verification

Friso Wittebrood, Jo Finders, Eelco van Setten, Mircea Dusa, Mark Eurlings, Kees Feenstra, Natalia Davydova, Thijs Hollink, Koen van Ingen Schenau, Mark O'Mahony, Stuart Young

Proceedings Volume 8352, 835205 (2012) https://doi.org/10.1117/12.918495

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Imaging systems, Reticles, Extreme ultraviolet, Electroluminescence, Critical dimension metrology, Lithography, Scanning electron microscopy

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Proceedings Article | 14 October 2011 Paper

Paper

Holistic lithography for EUV: NXE:3100 characterization of first printed wafers using an advanced scanner model and scatterometry

O. Schumann, J. Zimmermann, H. Liu, S. Kang, D. Oorschot, K. van Ingen-Schenau, I. Kim, V. Vaenkatesan, Frank A. J. M. Driessen, J. Jiang, H. Kang, Natalia Davydova, K. Gronlund, C. Wagner, Y. Lee, R. Peeters, J. Yeo

Proceedings Volume 8166, 81660Z (2011) https://doi.org/10.1117/12.898955

KEYWORDS: Semiconducting wafers, Scanners, Photomasks, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Reflectivity, Deep ultraviolet, Metrology, Critical dimension metrology

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Proceedings Article | 23 March 2010 Paper

Paper

Measuring resist-induced contrast loss using EUV interference lithography

Harun Solak, Vaida Auzelyte, Kees Feenstra, Koen van Ingen Schenau, Andreas Langner, Roel Gronheid, Eelco van Setten, Yasin Ekinci

Proceedings Volume 7636, 76362X (2010) https://doi.org/10.1117/12.846495

KEYWORDS: Nanoimprint lithography, Extreme ultraviolet lithography, Modulation transfer functions, Photomasks, Lithography, Silicon, Electroluminescence, Scanning electron microscopy, Diffraction gratings, Diffusion

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Proceedings Article | 20 March 2010 Paper

Paper

EUV into production with ASML's NXE platform

Christian Wagner, Martin Lowisch, Judon Stoeldraijer, Peter Kuerz, Eelco van Setten, David Ockwell, Noreen Harned, Bernd Thuering, Hans Meiling, Koen van Ingen-Schenau, Rudy Peeters

Proceedings Volume 7636, 76361H (2010) https://doi.org/10.1117/12.845700

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Reticles, Optics manufacturing, Lithography, System integration, Mirrors, Lithographic illumination, Optical alignment

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SPIE Journal Paper | 1 October 2009

Imaging budgets for extreme ultraviolet optics: ready for 22-nm node and beyond

Marc Bienert, Aksel Göhnermeier, Oliver Natt, Martin Lowisch, Paul Gräupner, Tilmann Heil, Reiner Garreis, Koen van Ingen Schenau, Steven Hansen

JM3, Vol. 8, Issue 04, 041509, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238543

KEYWORDS: EUV optics, Extreme ultraviolet, Stray light, Critical dimension metrology, Nanoimprint lithography, Fiber optic illuminators, Photomasks, Optics manufacturing, Printing, Optical proximity correction

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Proceedings Article | 23 September 2009 Paper

Paper

Feasibility study of the approach to flare, shadowing, optical and process corrections for EUVL OPC

Huayu Liu, Eric Hendrickx, Wei Liu, Jiong Jiang, Peter Nikolsky, Natalia Davydova, Paul van Adrichem, Koen van Ingen Schenau, Gian Lorusso

Proceedings Volume 7488, 74882N (2009) https://doi.org/10.1117/12.833527

KEYWORDS: Optical proximity correction, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Data modeling, Calibration, Semiconducting wafers, Optical calibration, Optical lithography, Scanners

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Proceedings Article | 27 May 2009 Paper

Paper

EUV imaging performance: moving towards production

Sjoerd Lok, Koen van Ingen Schenau, Hans Meiling, Kees Feenstra, Cemil Kaya, Eelco van Setten, Christian Wagner, Joep van Dijk

Proceedings Volume 7470, 74700G (2009) https://doi.org/10.1117/12.835178

KEYWORDS: Semiconducting wafers, Photomasks, Extreme ultraviolet lithography, Line width roughness, Reticles, Extreme ultraviolet, Logic, Electroluminescence, Optical proximity correction, Silicon

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Proceedings Article | 1 April 2009 Paper

Paper

Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools

Linda Ohara, Joerg Mallmann, Sang-In Han, Martin Burkhardt, Robert Routh, Hiroyuki Mizuno, Thomas Wallow, Kevin Cummings, Chiew-Seng Koay, Robert Watso, Obert Wood, Karen Petrillo, Koen van Ingen Schenau, Bill Pierson, Anita Fumar-Pici, Chris Anderson, Bart Kessels, Steven Hansen, Yunfei Deng, Patrick Naulleau, Lior Huli

Proceedings Volume 7273, 72733T (2009) https://doi.org/10.1117/12.814457

KEYWORDS: Optical proximity correction, Extreme ultraviolet lithography, Extreme ultraviolet, Data modeling, Lithography, Diagnostics, Photoresist processing, Nanoimprint lithography, Diffusion, Reticles

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Proceedings Article | 18 March 2009 Paper

Paper

Imaging budgets for EUV optics: ready for 22-nm node and beyond

Marc Bienert, Paul Gräupner, Steve Hansen, Oliver Natt, Tilmann Heil, Koen van Ingen Schenau, Martin Lowisch, Aksel Göhnemeier, Reiner Garreis

Proceedings Volume 7271, 72711B (2009) https://doi.org/10.1117/12.814185

KEYWORDS: Extreme ultraviolet, EUV optics, Nanoimprint lithography, Fiber optic illuminators, Critical dimension metrology, Optics manufacturing, Lithography, Optical proximity correction, Image processing, Solids

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Proceedings Article | 19 May 2008 Open Access

Open Access

Paper

The lithography technology for the 32 nm HP and beyond

Alek Chen, Bill Arnold, Hans Meiling, Jo Finders, Mircea Dusa, Koen van Ingen Schenau

Proceedings Volume 7028, 702810 (2008) https://doi.org/10.1117/12.796016

KEYWORDS: Etching, Critical dimension metrology, Lithography, Extreme ultraviolet, Double patterning technology, Reticles, Optical lithography, Scanners, Semiconducting wafers, Process control

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Proceedings Article | 15 April 2008 Paper

Paper

Photoresist induced contrast loss and its impact on EUV imaging extendibility

Steve Hansen, Jan van Schoot, Koen van Ingen Schenau, Bill Pierson

Proceedings Volume 6923, 692314 (2008) https://doi.org/10.1117/12.772809

KEYWORDS: Diffusion, Photoresist materials, Electroluminescence, Extreme ultraviolet lithography, Extreme ultraviolet, Image processing, Convolution, Photoresist processing, Interferometers, Data modeling

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Proceedings Article | 3 April 2008 Paper

Paper

EUV simulation extension study for mask shadowing effect and its correction

Hoyoung Kang, Steve Hansen, Koen van Ingen Schenau, Jan van Schoot

Proceedings Volume 6921, 69213I (2008) https://doi.org/10.1117/12.772487

KEYWORDS: Photomasks, Extreme ultraviolet, Artificial intelligence, Extreme ultraviolet lithography, Image quality, Reflectivity, Optical proximity correction, Lithography, Electromagnetism, Computer simulations

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Proceedings Article | 27 March 2007 Paper

Paper

Pitch doubling through dual-patterning lithography challenges in integration and litho budgets

Olaf Larsen, Paul de Haas, Mireille Maenhoudt, Shaunee Cheng, Bert Vleeming, Geert Storms, Jeroen Meessen, John Quaedackers, Patrick Jaenen, Eddy van der Heijden, Jo Finders, Mircea Dusa, Onno Wismans, Gerald Dicker, Koen van Ingen Schenau

Proceedings Volume 6520, 65200G (2007) https://doi.org/10.1117/12.714278

KEYWORDS: Etching, Semiconducting wafers, Double patterning technology, Optical lithography, Overlay metrology, Critical dimension metrology, Lithography, Neodymium, Photomasks, Manufacturing

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Proceedings Article | 26 March 2007 Paper

Paper

The random contact hole solutions for future technology nodes

Koen van Ingen Schenau, Marco Moers, Shih-en Tseng, Andre Engelen, Steve Hansen, Jason Shieh, Alek Chen

Proceedings Volume 6520, 65201B (2007) https://doi.org/10.1117/12.712447

KEYWORDS: Photomasks, Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Double patterning technology, Logic, Error analysis, Lithographic illumination, Optical lithography, Imaging systems

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Proceedings Article | 21 June 2006 Paper

Paper

Spot sensor enabled reticle uniformity measurements for 65nm CDU analysis with scatterometry

Maurice Janssen, Hans van der Laan, Koen van Ingen Schenau

Proceedings Volume 6281, 62810F (2006) https://doi.org/10.1117/12.692636

KEYWORDS: Reticles, Semiconducting wafers, Sensors, Scatterometry, Scanning electron microscopy, Metrology, Scatter measurement, Inspection, Pellicles, Time metrology

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Proceedings Article | 15 March 2006 Paper

Paper

Enabling the 45nm node by hyper-NA polarized lithography

Christian Wagner, Geert Swinkels, Koen van Ingen Schenau, Steve Hansen, Martijn Wehrens, Laurens de Winter, Henk van Greevenbroek, Michel Klaassen, Nicolas Le Masson, Mark van de Kerkhof, Armand Koolen, Wim de Boeij

Proceedings Volume 6154, 61540B (2006) https://doi.org/10.1117/12.659006

KEYWORDS: Polarization, Birefringence, Reticles, Lithography, Lithographic illumination, Imaging systems, Photomasks, Fiber optic illuminators, Electroluminescence, Scanners

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Proceedings Article | 12 May 2005 Paper

Paper

Imaging enhancements by polarized illumination: theory and experimental verification

Carsten Kohler, Mark van de Kerkhof, Jos de Klerk, Wim de Boeij, Tilmann Heil, Geert Swinkels, Haico Kok, Damian Fiolka, Jan Mulkens, Jo Finders, Koen van Ingen-Schenau

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599626

KEYWORDS: Polarization, Photomasks, Critical dimension metrology, Imaging systems, Semiconducting wafers, Line edge roughness, Fiber optic illuminators, Electroluminescence, Lithographic illumination, Reticles

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Proceedings Article | 10 May 2005 Paper

Paper

Scatterometry based 65nm node CDU analysis and prediction using novel reticle measurement technique

Maurice Janssen, Koen van Ingen Schenau, Ton Kiers, Peter Vanoppen, Hans van der Laan

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601500

KEYWORDS: Reticles, Critical dimension metrology, Scatterometry, Scanning electron microscopy, Sensors, Semiconducting wafers, Photomasks, Phase shifts, Binary data, Scatter measurement

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Proceedings Article | 4 May 2005 Paper

Paper

New advanced BARC materials for ultra-high NA applications

James Claypool, Vandana Krishnamurthy, Marc Weimer, Koen van Ingen Schenau, Wendy Gehoel

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599988

KEYWORDS: Reflectivity, Electroluminescence, Line edge roughness, Lithography, Semiconducting wafers, Immersion lithography, Line width roughness, Polarization, Scanning electron microscopy, Lithographic illumination

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Proceedings Article | 30 July 2002 Paper

Paper

System qualification and optimization for imaging performance on the 0.80-NA 248-nm step-and-scan systems

Koen van Ingen Schenau, Jeroen Linders, Wolfgang Emer, Hans Bakker, Thomas Rohe, Richard Moerman, Mark Zellenrath

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474612

KEYWORDS: Lithography, Monochromatic aberrations, Imaging systems, Photomasks, Scanning electron microscopy, Critical dimension metrology, Binary data, Manufacturing, Semiconducting wafers, Image sensors

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Proceedings Article | 24 August 2001 Paper

Paper

Process optimization for sub-100-nm gate patterns using phase edge lithography

Wendy Gehoel-van Ansem, Geert Vandenberghe, Bert Vleeming, Patrick Wong, Koen van Ingen Schenau

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436849

KEYWORDS: Photoresist materials, Photomasks, Lithography, Photoresist developing, Critical dimension metrology, Chemistry, Reticles, Optical lithography, Antireflective coatings, Capillaries

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Proceedings Article | 20 October 2000 Paper

Paper

Low-k1 imaging: how low can we go?

Jo Finders, Peter Jenkins, Koen Van Ingen Schenau, Mark Eurlings, Mircea Dusa

Proceedings Volume 4226, (2000) https://doi.org/10.1117/12.404849

KEYWORDS: Photomasks, Optical lithography, Lithographic illumination, Phase shifts, Binary data, Lithography, Nanoimprint lithography, Scattering, Optical proximity correction, Printing

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As critical dimensions continue to shrink in line with the SIA roadmap, the ratio of printed feature size and accepted wavelengths for optical lithography is driving inexorably towards the theoretical limitation of 0.25 for the Raleigh equation constant, k1. With the drive to lower k1 values fundamental limitations start to impact optical lithography. One example is the inability to simultaneously print features at different duty cycles with acceptable process windows. In the k1 regime down to 0.5, dense and isolated features could be printed in one with acceptable process windows. Today advanced lithography is operating at k1 values of 0.42-0.37 using KrF excimer laser light sources at a wavelength ((lambda) ) of 248nm. High lens Numerical Aperture (NA) is required to obtain sufficient aerial image contrast for dense lines, but results in reduced depth of focus which scales proportional to (lambda) /NA². Using off-axis illumination techniques such as annular illumination can compensate the reduction in depth of focus for dense lines. For isolated lines high NA has only limited impact on the aerial image contrast due to the difference in the diffraction pattern and only serves to reduce the limited depth of focus which, unlike dense lines, does not benefit from the application of off-axis illumination. Use of increasingly strong imaging enhancement techniques will be required at lower k1 values resulting in further trade-offs to be addressed in pattern dependency. For example, quadrupole and di-pole off-axis illumination provides stronger enhancement to the available process window than annular illumination but only for features with specific orientations. In this paper an overview of the different imaging enhancement techniques will be given and examples of the trade-offs between enhancement and techniques, constraints on orientations and duty cycles will have to be applied in the device design. Alternatively, individual device layers will have to be separated by feature type, duty cycle and orientation to allow optimum enhancement techniques to be applied for each feature using multiple exposures. These approaches will be required if optical lithography at k1 values around 0.3 is to be realized. In the paper we will compare the use of two very strong enhancement techniques, dipole illumination and alternating (Levinson type) Phase Shift Mask with respect to process latitude, complexity and aberration sensitivity. To complete the review of low k1 the economic viability of optical lithography utilizing these strong enhancement techniques will be analyzed in terms of Cost of Ownership.

Proceedings Article | 5 July 2000 Paper

Paper

Status of ArF lithography for the 130-nm technology node

Kurt Ronse, Anne-Marie Goethals, Frieda Van Roey, Guy Davies, Barbra Heskamp, Ardavan Niroomand, Mireille Maenhoudt, Christie Delvaux, Patrick Jaenen, Bert Vleeming, Diziana Vangoidsenhoven, Jo Finders, Ivan Pollentier, Ingrid Pollers, Geert Vandenberghe, Koen van Ingen Schenau

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389029

KEYWORDS: Lithography, 193nm lithography, Photomasks, Manufacturing, Etching, Reticles, Dry etching, Lenses, Oxides, Resolution enhancement technologies

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Proceedings Article | 26 July 1999 Paper

Paper

Mask error factor: causes and implications for process latitude

Jan van Schoot, Koen van Ingen Schenau, Michel Klaassen, Corine Buijk, Jo Finders

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354338

KEYWORDS: Reticles, Critical dimension metrology, Semiconducting wafers, Diffraction, Photomasks, Cadmium, Lithographic illumination, Photoresist materials, Lithography, Resolution enhancement technologies

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Proceedings Article | 29 June 1998 Paper

Paper

Lithographic performance of recent DUV photoresists

Corine Buijk, Koen van Ingen Schenau, Bob Streefkerk

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312369

KEYWORDS: Photoresist materials, Semiconducting wafers, Chlorine, Electroluminescence, Critical dimension metrology, Deep ultraviolet, Reticles, Thin film coatings, Scanning electron microscopy, Silicon

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Showing 5 of 33 publications

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