Dr. Hiroshi Arimoto Profile

Dr. Hiroshi Arimoto

at Fujitsu Semiconductor Ltd

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 24 March 2006 Paper

Tri-layer resists process for fabricating 45-nm L&S patterns by EPL

Fumihiro Koba, Kazuyuki Matsumaro, Eiichi Soda, Tadayoshi Watanabe, Yoshihisa Matsubara, Hiroshi Arimoto, Tasuku Matsumiya, Daisuke Kawana, Naoki Yamashita, Yasushi Fujii, Katsumi Ohmori, Mitsuru Sato, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 6151, 615127 (2006) https://doi.org/10.1117/12.655976

KEYWORDS: Photoresist processing, Failure analysis, Etching, Back end of line, Semiconducting wafers, Critical dimension metrology, Electron beam lithography, Lithography, Extreme ultraviolet lithography, Photomasks

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In this study, we have demonstrated a resist process to fabricate sub 45-nm lines and spaces (L&S) patterns (1:1) by using electron projection lithography (EPL) for a back-end-of-line (BEOL) process for 45-nm technology node. As a starting point we tried to fabricate sub 45-nm L&S (1:1) patterns using a conventional EPL single-layer resist process. There, the resolution of the EPL resist patterns turned out to be limited to 70 nm L&S (1:1) with aspect ratio (AR) of 3.3 which was caused by pattern collapse during the drying step in resist develop process. It has been common knowledge that pattern collapse of this type could be prevented by reducing the surface tension of the rinse-liquid and by decreasing the AR of the resist patterns. Therefore, we first applied a surfactant rinse to a single-layer resist process that could control the pattern collapse by its reduced surface tension. In this experiment, we used the ArF resist instead of the EPL resist because the surfactant that we were able to obtain was the one optimized to the ArF resist materials. From the results of ArF resist experiments, it was guessed that it was difficult for the EPL resist to obtain the L&S patterns with AR of 3.5 or more even if we used the surfactant optimized to the EPL resist. And we found that it was considerably difficult to form 45-nm L&S patterns with AR of 5.1 that was our target. Next, we evaluated a EPL tri-layer resist process to prevent pattern collapse by decreasing the AR of the resist patterns. Because in a tri-layer resist process the purpose of the top-layer resist is to transfer pattern to the middle-layer, a thinner top-layer resist was selected. By using the tri-layer resist process we were able to control the resist pattern collapse and thus were successful in achieving 40-nm L/S (1:1) top-layer resist patterns with AR of 2.3. The process also gave us 40-nm L&S (1:1) patterns after low-k film etching. And moreover, using our tri-layer resist process we were able to fabricate a wiring device with Cu/low-k. Although it was our first attempt, the process resulted in a high yield of 70 % for a 60-nm (1:1) wiring device. As a part of our study we conducted failure analysis of the results of our experiment. We found that the failures were located at the edge of the wafer and might originate in the bottom-layer pattern collapse. We thought that the wiring yield could be increased by control the bottom-layer pattern collapse. These findings indicated that our tri-layer resist process had a high applicability for device fabrication in BEOL.

Proceedings Article | 23 March 2006 Paper

Assessment of electron projection lithography mask membrane image placement accuracy due to fabrication processes

Michael Boruszewski, Roxann Engelstad, Gerald Dicks, Hiroshi Sakaue, Hiroshi Arimoto

Proceedings Volume 6151, 61511J (2006) https://doi.org/10.1117/12.657659

KEYWORDS: Photomasks, Picosecond phenomena, Silicon carbide, Mask making, Metrology, Electron beam lithography, Projection lithography, Image processing, 3D modeling, Etching

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Proceedings Article | 23 March 2006 Paper

Resolution improvement of EPL stencil mask using thin membrane

Hiroshi Sugimura, Hideyuki Eguchi, Masashi Norimoto, Yoshiyuki Negishi, Isao Yonekura, Kojiro Ito, Akira Tamura, Fumihiro Koba, Hiroshi Arimoto

Proceedings Volume 6151, 61511F (2006) https://doi.org/10.1117/12.655425

KEYWORDS: Photomasks, Reactive ion etching, Etching, Semiconducting wafers, Scattering, Mask making, Electron beam lithography, Silicon, Image resolution, Optical lithography

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Proceedings Article | 23 March 2006 Paper

Advanced Image Placement Performance for the Current EPL Masks

Hideyuki Eguchi, Hiroshi Sugimura, Kaoru Koike, Hiroshi Sakaue, Hiroshi Arimoto, Kentaro Ogawa, Takashi Susa, Shinji Kunitani, Toshiaki Kurosu, Takashi Yoshii, Kojiro Itoh, Akira Tamura

Proceedings Volume 6151, 61511G (2006) https://doi.org/10.1117/12.655423

KEYWORDS: Photomasks, Semiconducting wafers, Metrology, Photoresist processing, Mask making, Optical alignment, Image processing, Silicon, Process control, Reactive ion etching

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Proceedings Article | 28 June 2005 Paper

Local IP evaluations of EPL reticle with 4 mm-sq Si membranes

Kaoru Koike, Hiroshi Sakaue, Hiroshi Arimoto, Tukasa Yamazaki, Hiroshi Sugimura, Takashi Susa, Kojiro Ito, Akira Tamura

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617467

KEYWORDS: Reticles, Distortion, Semiconducting wafers, Photomasks, Silicon, Metrology, Electron beam lithography, Optical alignment, Data corrections, Overlay metrology

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Proceedings Article | 28 June 2005 Paper

Preliminary study on EPL mask repair technology for 45-nm node

Nobuyuki Iriki, Hiroshi Arimoto, Yo Yamamoto, Akira Tamura

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617280

KEYWORDS: Photomasks, Etching, Photomicroscopy, Semiconducting wafers, Inspection, Defect inspection, Image transmission, Printing, Raster graphics, Ion beams

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Proceedings Article | 6 May 2005 Paper

The improvement of the overlay accuracy using the reticle distortion correction for EPL technologies

Kaoru Koike, Hiroshi Sakaue, Hiroshi Arimoto, Akira Tamura, Takashi Susa, Kojiro Ito

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599332

KEYWORDS: Distortion, Reticles, Metrology, Photomasks, Semiconducting wafers, Time metrology, Electron beam lithography, Silicon, Optical alignment, Overlay metrology

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Proceedings Article | 6 May 2005 Paper

EPL performance in 65-nm node metallization technology and beyond

F. Koba, T. Tsuchida, H. Sakaue, K. Koike, J. Yamamoto, N. Iriki, H. Yamashita, S. Kageyama, T. Nasuno, E. Soda, K. Takeda, H. Kobayashi, F. Shoji, H. Okamura, Y. Matsubara, H. Arimoto

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599257

KEYWORDS: Metals, Transmission electron microscopy, Lithography, Scanners, Copper, Scanning electron microscopy, Resistance, Electron beam lithography, Overlay metrology, Chemical mechanical planarization

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Proceedings Article | 6 May 2005 Paper

Preliminary study on systematic optimization of EPL mask infrastructure

Nobuyuki Iriki, Jiro Yamamoto, Hiroshi Arimoto

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599533

KEYWORDS: Photomasks, Inspection, Photomicroscopy, Defect inspection, Etching, Semiconducting wafers, Carbon, Image transmission, Printing, Calibration

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Proceedings Article | 6 December 2004 Paper

Development of defect inspection and repair systems for EPL mask infrastructure

Jiro Yamamoto, Nobuyuki Iriki, Hiroshi Arimoto

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.578652

KEYWORDS: Photomasks, Defect inspection, Inspection, Semiconducting wafers, Printing, Defect detection, Holons, Electron beam lithography, Projection lithography, Nanotechnology

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Proceedings Article | 28 May 2004 Paper

Model-based OPC/DRC considering local flare effects

Hiroki Futatsuya, Teruyoshi Yao, Morimi Osawa, Kozo Ogino, Hiromi Hoshino, Hiroshi Arimoto, Yasuhide Machida, Satoru Asai

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535076

KEYWORDS: Optical proximity correction, Printing, Photomasks, Model-based design, Semiconducting wafers, Light scattering, Diffraction, Acquisition tracking and pointing, Manufacturing, Lithography

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Proceedings Article | 14 April 1999 Paper

Surface-mount-type LD module

Tsutomu Nakamura, Hajime Hotta, Tokihiro Terashima, Hiroshi Arimoto, Masanobu Kato

Proceedings Volume 3626, (1999) https://doi.org/10.1117/12.345425

KEYWORDS: Silicon, Optical alignment, Optical fibers, Semiconductor lasers, Single mode fibers, Glasses, Optical components, Reliability, Optical fabrication, Lenses

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Showing 5 of 12 publications

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