Dr. Jianming Zhou Profile

Dr. Jianming Zhou

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Publications (17)

Proceedings Article | 20 October 2016 Paper

Eliminating the offset between overlay metrology and device patterns using computational metrology target design

Jianming Zhou, Sarah Wu, Craig Hickman, Ewoud van West, Maurits van der Schaar, Wangshi Zhou, Youping Zhang, Sean Park, Paul Tuffy, Dan Ulmer, Cedric Affentauschegg, Henk Niesing

Proceedings Volume 9778, 97781G (2016) https://doi.org/10.1117/12.2219439

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Proceedings Article | 24 March 2016 Paper

Overlay metrology performance prediction fidelity: the factors enabling a successful target design cycle

Inna Tarshish-Shapir, Eitan Hajaj, Greg Gray, Jeffery Hodges, Jianming Zhou, Sarah Wu, Sam Moore, Guy Ben-Dov, Chen Dror, Ze'ev Lindenfeld, David Gready, Mark Ghinovker, Mike Adel

Proceedings Volume 9778, 97782J (2016) https://doi.org/10.1117/12.2219181

KEYWORDS: Metrology, Overlay metrology, Electromagnetic simulation, Reflectivity, Diffraction, Semiconducting wafers, Inspection, Scatterometry, Polarization, Device simulation, Interference (communication), Optical design, Light sources

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Proceedings Article | 20 April 2011 Paper

Wafer quality analysis of various scribe line mark designs

Jianming Zhou, Craig Hickman, Yuan He, Scott Light, Lucas Lamonds, Anton deVilliers

Proceedings Volume 7971, 79711H (2011) https://doi.org/10.1117/12.881551

KEYWORDS: Semiconducting wafers, Spatial light modulators, Optical alignment, Diffraction, Scanners, Reflection, Signal detection, Manufacturing, Thin films, Sensors

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Proceedings Article | 4 March 2010 Paper

Improving aberration control with application specific optimization using computational lithography

Jianming Zhou, Youping Zhang, Peter Engblom, Mike Hyatt, Eric Wu, Martin Snajdr, Anton deVilliers, Yuan He, Craig Hickman, Peng Liu, Dennis de Lang, Bernd Geh, Erik Byers, Scott Light

Proceedings Volume 7640, 76400K (2010) https://doi.org/10.1117/12.846697

KEYWORDS: Semiconducting wafers, Scanners, Computational lithography, Optimization (mathematics), Calibration, Finite element methods, Thermal modeling, Computer simulations, Data modeling, Critical dimension metrology

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Proceedings Article | 4 March 2010 Paper

Simulation-based pattern matching using scanner metrology and design data to reduce reliance on CD metrology

Yuan He, Erik Byers, Scott Light, Danielle Hines, Anton Devilliers, Mike Hyatt, Jianming Zhou, Vinay Nair, Zongchang Yu, Yu Cao, Xu Xie, Wenjin Shao, Rafael Aldana, Ronald Goossens, Chang-Qun Ma, Junwei Lu, Hua-yu Liu, Chris Aquino, Peter Engblom, Tjitte Nooitgedagt, Eric Janda

Proceedings Volume 7640, 764014 (2010) https://doi.org/10.1117/12.848255

KEYWORDS: Scanners, Wafer-level optics, Semiconducting wafers, Metrology, Data modeling, Calibration, Critical dimension metrology, Optics manufacturing, Performance modeling, Optical simulations

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Proceedings Article | 16 March 2009 Paper

Process transfer strategies between ASML immersion scanners

Yuan He, Peter Engblom, Jianming Zhou, Eric Janda, Anton Devilliers, Bernd Geh, Erik Byers, Jasper Menger, Steve Hansen, Mircea Dusa

Proceedings Volume 7274, 72742P (2009) https://doi.org/10.1117/12.816417

KEYWORDS: Scanners, Printing, Semiconducting wafers, Reticles, Calibration, Metrology, Scatterometry, Data modeling, Cadmium, Scanning electron microscopy

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Proceedings Article | 12 March 2008 Paper

Applications of TM polarized illumination

Bruce Smith, Jianming Zhou, Peng Xie

Proceedings Volume 6924, 69240J (2008) https://doi.org/10.1117/12.775739

KEYWORDS: Polarization, Reflectivity, Modulation, Photoresist materials, Reflection, Dielectric polarization, Double patterning technology, Refractive index, Interfaces, Silicon

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The use of transverse electric (TE) polarization has dominated illumination schemes as selective polarization is used for high-NA patterning. The benefits of TE polarization are clear - the interference of diffracted beams remains absolute at oblique angles. Transverse magnetic (TM) polarization is usually considered less desirable as imaging modulation from interference at large angle falls off rapidly as the 1/cosθ. Significant potential remains, however, for the use of TM polarization at large angles when its reflection component is utilized. By controlling the resist/substrate interface reflectivity, high modulation for TM polarization can be maintained for angles up to 90° in the resist. This can potentially impact the design of illumination away from most recent TE-only schemes for oblique imaging angles (high NA). We demonstrate several cases of TM illumination combined with tuned substrate reflectivity for 0.93NA, 1.20NA, and 1.35NA and compare results to TE and unpolarized cases. The goal is to achieve a flat response through polarization at large imaging angles. An additional application of TM illumination is its potential use for double patterning. As double patterning and double exposure approaches are sought in order to meet the needs of 32nm device generations and beyond, materials and process engineering challenges become prohibitive. We have devised a method for frequency doubling in a single exposure using an unconventional means of polarization selection and by making use of the reflective component produced at the photoresist/substrate interface. In doing so, patterns can be deposited into a photoresist film with double density. As an example, using a projection system numerical aperture of 1.20, with water as an immersion fluid, and a conventional polyacrylate 193nm photoresist, pattern resolution at 20nm half-pitch are obtainable (which is 0.125lambda/NA). The process to transfer this geometry into a hardmask layer uses conventional materials, including the photoresist layer and thin film silicon oxide based materials.

Proceedings Article | 29 March 2007 Paper

Mask enhancement using an evanescent wave effect

Neal Lafferty, Jianming Zhou, Bruce Smith

Proceedings Volume 6520, 652041 (2007) https://doi.org/10.1117/12.711781

KEYWORDS: Chromium, Photomasks, Near field, Lithography, Wave propagation, Refractive index, Polarization, Image enhancement, Resolution enhancement technologies, Finite-difference time-domain method

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Proceedings Article | 27 March 2007 Paper

Immersion lithography with numerical apertures above 2.0 using high index optical materials

Jianming Zhou, Neal Lafferty, Bruce Smith, John Burnett

Proceedings Volume 6520, 65204T (2007) https://doi.org/10.1117/12.712429

KEYWORDS: Photoresist materials, Refractive index, Absorbance, Sapphire, Optical lithography, Aluminum, Interfaces, Birefringence, Lutetium, Prisms

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Proceedings Article | 26 March 2007 Paper

Snell or Fresnel: the influence of material index on hyper-NA lithography

Bruce Smith, Jianming Zhou

Proceedings Volume 6520, 65200A (2007) https://doi.org/10.1117/12.713203

KEYWORDS: Reflectivity, Refractive index, Photoresist materials, Interfaces, Polarization, Reflection, Silica, Refraction, Absorption, Sapphire

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Proceedings Article | 22 March 2007 Paper

Outlook for potential third-generation immersion fluids

Juan López-Gejo, Joy Kunjappu, J. Zhou, B. Smith, Paul Zimmerman, Will Conley, Nicholas Turro

Proceedings Volume 6519, 651921 (2007) https://doi.org/10.1117/12.695536

KEYWORDS: Absorption, Refractive index, Oxygen, Argon, Microfluidics, Absorbance, Nitrogen, Liquids, Optical lithography, Oxidation

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Proceedings Article | 21 March 2006 Paper

Three-dimensional imaging of 30-nm nanospheres using immersion interferometric lithography

Jianming Zhou, Yongfa Fan, Bruce Smith

Proceedings Volume 6154, 61544M (2006) https://doi.org/10.1117/12.656544

KEYWORDS: Lithography, Photonic crystals, Polarization, Interferometry, 3D image processing, Dielectric polarization, Photoresist materials, Immersion lithography, Crystals, Semiconducting wafers

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Proceedings Article | 15 March 2006 Paper

Evanescent wave imaging in optical lithography

Bruce Smith, Yongfa Fan, Jianming Zhou, Neal Lafferty, Andrew Estroff

Proceedings Volume 6154, 61540A (2006) https://doi.org/10.1117/12.657322

KEYWORDS: Wave propagation, Refractive index, Photoresist materials, Lithography, Optical lithography, Photomasks, Near field, Interfaces, Imaging systems, Solids

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Proceedings Article | 12 May 2005 Paper

ILSim: a compact simulation tool for interferometric lithography

Yongfa Fan, Anatoly Bourov, Lena Zavyalova, Jianming Zhou, Andrew Estroff, Neal Lafferty, Bruce Smith

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.621286

KEYWORDS: Polarization, Thin films, Interferometry, Reflection, Interfaces, Lithography, Imaging systems, Thin film coatings, Immersion lithography, Nanolithography

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Proceedings Article | 12 May 2005 Paper

Immersion lithography fluids for high NA 193 nm lithography

Jianming Zhou, Yongfa Fan, Anatoly Bourov, Neal Lafferty, Frank Cropanese, Lena Zavyalova, Andrew Estroff, Bruce Smith

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.602533

KEYWORDS: Refractive index, Absorbance, Microfluidics, Immersion lithography, Absorption, Water, Quartz, Prisms, Sodium, 193nm lithography

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Proceedings Article | 12 May 2005 Paper

Synthetic defocus in interferometric lithography

Frank Cropanese, Anatoly Bourov, Yongfa Fan, Jianming Zhou, Lena Zavyalova, Bruce Smith

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.602948

KEYWORDS: Modulation, Interferometry, Lithography, Polarization, Projection systems, Interferometers, Demodulation, Critical dimension metrology, Polarizers, Mirrors

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Proceedings Article | 4 May 2005 Paper

Amplification of the index of refraction of aqueous immersion fluids by ionic surfactants

Kwangjoo Lee, Joy Kunjappu, Steffen Jockusch, Nicholas Turro, Tatjana Widerschpan, Jianming Zhou, Bruce Smith, Paul Zimmerman, Will Conley

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.606105

KEYWORDS: Refraction, Refractive index, Water, Sodium, Cadmium, Luminescence, Optical lithography, Ions, Molecules, Lithography

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Showing 5 of 17 publications

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