Mr. Gerardo Bottiglieri Profile

Gerardo Bottiglieri

Senior Design Engineer

SPIE Involvement:

Conference Program Committee | Author

Publications (22)

Proceedings Article | 10 April 2024 Presentation + Paper

Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Tim Brunner, Eelco van Setten, Claire van Lare, Mark van de Kerkhof

Proceedings Volume 12953, 1295302 (2024) https://doi.org/10.1117/12.3009996

KEYWORDS: Photomasks, Light sources and illumination, Source mask optimization, Lithography, Near field, Diffraction

Read Abstract +

Proceedings Article | 13 June 2022 Presentation

EUV mask absorber induced best focus shifts

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Proceedings Volume PC12051, PC1205108 (2022) https://doi.org/10.1117/12.2614174

KEYWORDS: Extreme ultraviolet, Refractive index, Nanoimprint lithography, High volume manufacturing, Extreme ultraviolet lithography, Diffraction, 3D printing, 3D image processing

Read Abstract +

Proceedings Article | 29 September 2021 Presentation

Pathfinding the perfect EUV mask: understanding the EUV mask using the hybrid mask model

Hazem M. Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Proceedings Volume 11854, 118540U (2021) https://doi.org/10.1117/12.2601243

KEYWORDS: Photomasks, Extreme ultraviolet, Diffraction, Refractive index, Systems modeling, Reflectivity, Phase shifts, Mirrors, Lithographic illumination, Extreme ultraviolet lithography

Read Abstract +

We employ the hybrid mask model of the Fraunhofer IISB simulator Dr.LiTHO to investigate the role of the absorber and multilayer for the observed image blur and contrast loss mechanisms. Hybrid mask model decomposes the EUV mask into the absorber and multilayer part. Both parts can be described by real 3D objects or idealized 2D objects. An idealized absorber is specified by the transmission tr and phase of the transmitted light. An idealized multilayer mirror is characterized by a certain reflectivity value, by an angular range or bandwidth (BW) where the light is reflected and by a distance Zeff from the absorber. The diffraction of the incident light by the absorber, the reflection of the diffracted light by the multilayer mirror, and the second diffraction of the reflected light by the absorber are combined by transfer matrices. The obtained superposed diffraction orders provide characteristic diffraction efficiencies and phase values of discrete orders. The presented analysis of the light diffraction from EUV mask and resulting imaging metrics provides several novel insights into the root causes of M3D effects in high NA EUV imaging. The combination of double diffraction by an ideal (thin) absorber and reflection by an ideal (thin) multilayer with a limited reflectivity range (BW <= 15°) explains the peculiarities of the optimum phase of attenuated PSM for EUV. In contrast to phase shift masks for DUV with an optimum phase of 180°, the optimum phase of attenuated phase shift mask for EUV is in the range between 200° and 250°. The optimum value varies with the pitch and a chosen trade-off between large image contrast (normalized image log slope - NILS) and large threshold to size. The real 3D absorber and multilayer contribute to the specific value of the best absorber thickness and phase as well, This finding explains previous observations of this phenomenon. Waveguide effects in real absorbers with low refractive index n are at the basis of the good imaging performance of low n materials. Low n absorber materials exhibit significant sensitivity to illumination direction and feature size. The described double diffraction of light by the absorber introduces characteristic jumps in the optimum bias (and other imaging metrics) versus pitch. The optimized phase/thickness of low n (low k) absorbers can extend the performance of high NA EUV imaging to pitches below 10 nm.

Proceedings Article | 28 September 2021 Presentation

High-NA EUV imaging: from system introduction towards low-k1 extension

Eelco van Setten, Jan Van Schoot, Anton van Oosten, Claire van Lare, Friso Wittebrood, Gijsbert Rispens, Gerardo Bottiglieri, John McNamara, Natalia Davydova, Jo Finders, Joerg Zimmermann, Bartosz Bilski, Paul Graeupner

Proceedings Volume 11854, 118540G (2021) https://doi.org/10.1117/12.2600965

KEYWORDS: Imaging systems, Extreme ultraviolet, Fiber optic illuminators, Transistors, Scanners, Optimization (mathematics), Mirrors, Metals, Extreme ultraviolet lithography

Read Abstract +

SPIE Journal Paper | 20 May 2021 Open Access

Investigation of waveguide modes in EUV mask absorbers

Hazem M. Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Claire van Lare, Eelco van Setten, Andreas Erdmann

JM3, Vol. 20, Issue 02, 021004, (May 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.021004

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Refractive index, Waveguide modes, Diffraction, Wave propagation, Near field, Nanoimprint lithography, Extreme ultraviolet lithography

Read Abstract +

DOWNLOAD PAPER

Proceedings Article | 22 February 2021 Presentation + Paper

EUV dark field lithography: extreme resolution by blocking 0th order

Timothy Brunner, Jara Santaclara, Gerardo Bottiglieri, Chris Anderson, Patrick Naulleau

Proceedings Volume 11609, 1160906 (2021) https://doi.org/10.1117/12.2582751

Read Abstract +

We have used the MET5 exposure system using “dark field” lithography, where a small σ=0.1 source is wholly contained in the 30% Central Obscuration of the 0.5NA mirror optics. One goal of this paper is to quantify and explain the superior image contrast of dark field lithography over normal dipole imagery. We demonstrate that almost ideal grating images can be obtained over the pitch range from 15 to 25nm. With the x-polarized source, gratings with Horizontal lines (TE polarized) have the best image contrast, while Vertical lines (TM polarized) have lesser contrast, showing less contrast as pitch decreases. By comparing lines of different orientation, the impact of polarization on lithography can be assessed. At the 16nm pitch, the experimental data showed roughly 20% improvement of the LWR metric for TE over TM. Besides the image contrast, we also calculate the effective contrast C_eff by folding in a Gaussian resist blur. These calculations highlight the need to find resist processes with small blur, e.g. with σ < 3nm. Exposure latitude scales with C_eff, as does LWR, LCDU and stochastic defect levels. Therefore optimization of C_eff, at the small pitches needed for production, is of high importance. We have also looked at dense arrays of bright spots produced with dark field imaging, which can produce either dense contact holes or dense pillars depending on the resist process tone. Our experimental results used a negative tone Metal Oxide resist process to print pillar arrays with pitches of 22, 24 and 26nm. Our experiments, and most of our simulations, were done with a standard EUV mask using a Ta-based absorber. Additional simulations explored the use of alternative absorber materials which can increase the dark field image intensity. For example, 25nm thick Ru absorber can more than double the image intensity relative to Ta absorber. The MET5 dark field litho imaging method is well-suited for testing resist processes in advance of the high NA tool availability. Both dense line gratings and dense hole/pillar array images can be imaged with good image contrast. However, pure dark field imaging is not capable of producing all the patterns needed for production, such as the larger pitch structures needed for overlay and alignment marks. On the other hand, there is a kind of “partial” dark field imagery that is very promising for production imaging with the high NA tool. Allowing Source Mask Optimization (SMO) software to include source points within the obscured part of the pupil, i.e. “dark field source points”, implements this capability in a very natural way and seems attractive for High Volume Manufacturing (HMV) applications with the high NA tool in the near future.

Proceedings Article | 22 February 2021 Presentation

Investigation of waveguide modes in EUV mask absorbers

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Claire van Lare, Eelco van Setten, Andreas Erdmann

Proceedings Volume 11609, 116090E (2021) https://doi.org/10.1117/12.2587948

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Refractive index, Waveguide modes, Near field, Nanoimprint lithography, SRAF, Coherence imaging, Binary data

Read Abstract +

Proceedings Article | 18 December 2020 Presentation + Paper

Multilayer optimization for high-NA EUV mask3D suppression

Eelco van Setten, Katrina Rook, Hazem Mesilhy, Gerardo Bottiglieri, Frank Timmermans, Meng Lee, Andreas Erdmann, Tim Brunner

Proceedings Volume 11517, 115170Y (2020) https://doi.org/10.1117/12.2574450

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Reflectivity, EUV optics, Ion beams, Manufacturing

Read Abstract +

Proceedings Article | 16 October 2020 Presentation + Paper

Experimental verification of high-NA imaging simulations using SHARP

Natalia Davydova, Fei Liu, Markus Benk, Eelco van Setten, Gerardo Bottiglieri, Anton van Oosten, John McNamara, Vincent Wiaux, Joern-Holger Franke, Kenneth Goldberg, DS Nam, Joseph Zekry, Patrick Naulleau, Timon Fliervoet, Rene Carpaij

Proceedings Volume 11517, 1151714 (2020) https://doi.org/10.1117/12.2572846

KEYWORDS: Scanners, Photomasks, Extreme ultraviolet lithography, Optical lithography, Reticles, Extreme ultraviolet, Microscopes, Light sources, Fiber optic illuminators, Projection systems

Read Abstract +

Proceedings Article | 23 March 2020 Presentation + Paper

Pathfinding the perfect EUV mask: the role of the multilayer

H. Mesilhy, P. Evanschitzky, G. Bottiglieri, E. van Setten, T. Fliervoet, A. Erdmann

Proceedings Volume 11323, 1132316 (2020) https://doi.org/10.1117/12.2551870

KEYWORDS: Reflectivity, Multilayers, Photomasks, Extreme ultraviolet, Silicon, Molybdenum, Diffraction, Optimization (mathematics), Lithography, Optical lithography

Read Abstract +

Proceedings Article | 9 October 2019 Presentation + Paper

Particle on EUV pellicles, impact on LWR

Michiel Kupers, Gijsbert Rispens, Lokesh Devaraj, Gerardo Bottiglieri, Twan van den Hoogenhoff, Par Broman, Andreas Erdmann, Felix Wahlisch

Proceedings Volume 11147, 111470S (2019) https://doi.org/10.1117/12.2537103

KEYWORDS: Particles, Line width roughness, Pellicles, Semiconducting wafers, Extreme ultraviolet, Reticles, Scanners, Extreme ultraviolet lithography, Photomasks

Read Abstract +

Proceedings Article | 29 August 2019 Paper

High-NA EUV imaging: challenges and outlook

Bartosz Bilski, Jörg Zimmermann, Matthias Roesch, Jack Liddle, Eelco van Setten, Gerardo Bottiglieri, Jan van Schoot

Proceedings Volume 11177, 111770I (2019) https://doi.org/10.1117/12.2536329

KEYWORDS: Lithography, Extreme ultraviolet, Projection systems, Diffraction, Extreme ultraviolet lithography, Scanners, EUV optics, Lithographic illumination, Projection lithography, Optical imaging, Computational lithography

Read Abstract +

Proceedings Article | 29 August 2019 Paper

Lithographic effects due to particles on high-NA EUV mask pellicle

Lokesh Devaraj, Gerardo Bottiglieri, Andreas Erdmann, Felix Wählisch, Michiel Kupers, Eelco van Setten, Timon Fliervoet

Proceedings Volume 11177, 111770V (2019) https://doi.org/10.1117/12.2534177

KEYWORDS: Particles, Pellicles, Photomasks, Phase shifts, Extreme ultraviolet, Scanners, Nanoimprint lithography, Extreme ultraviolet lithography, Reticles

Read Abstract +

Proceedings Article | 26 March 2019 Presentation + Paper

High NA EUV lithography: Next step in EUV imaging

Eelco van Setten, Gerardo Bottiglieri, John McNamara, Jan van Schoot, Kars Troost, Joseph Zekry, Timon Fliervoet, Stephen Hsu, Joerg Zimmermann, Matthias Roesch, Bartosz Bilski, Paul Graeupner

Proceedings Volume 10957, 1095709 (2019) https://doi.org/10.1117/12.2514952

KEYWORDS: Source mask optimization, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Photomasks, Diffraction

Read Abstract +

Proceedings Article | 26 March 2019 Presentation + Paper

3D mask effects in high NA EUV imaging

Andreas Erdmann, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Timon Fliervoet

Proceedings Volume 10957, 109570Z (2019) https://doi.org/10.1117/12.2515678

KEYWORDS: Diffraction, Photomasks, Extreme ultraviolet, 3D modeling, 3D image processing, Lithography, Projection systems

Read Abstract +

Proceedings Article | 12 October 2018 Presentation

High-NA EUV lithography: The next step in EUV imaging (Conference Presentation)

Eelco van Setten, John McNamara, Jan van Schoot, Gerardo Bottiglieri, Kars Troost, Timon Fliervoet, Stephen Hsu, Jörg Zimmermann, Jens-Timo Neumann, Matthias Rösch, Paul Graeupner

Proceedings Volume 10809, 1080910 (2018) https://doi.org/10.1117/12.2502149

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Fiber optic illuminators, Transistors, Photomasks, Mirrors, Image resolution

Read Abstract +

Proceedings Article | 29 May 2018 Paper

Simulation study of illumination effects in high-NA EUV lithography

Mohamed Ismail, Peter Evanschitzky, Andreas Erdmann, Gerardo Bottiglieri, Eelco van Setten, Timon Fliervoet

Proceedings Volume 10694, 106940H (2018) https://doi.org/10.1117/12.2315091

KEYWORDS: Photomasks, Nanoimprint lithography, Diffraction, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Lithographic illumination, Imaging systems, Reflectivity, Critical dimension metrology

Read Abstract +

Current EUV exposure systems employ a numerical aperture (NA) of 0.33. This relatively small NA is a consequence of geometrical design limitations of all reflective projection systems with a 4 demagnification in the orthogonal x- and y-directions of the image plane. Anamorphic imaging, which employs different demagnification in horizontal (y) and vertical (x) direction can increase the NA to a value of 0.55. The consequences of using anamorphic high-NA imaging system have to be studied by rigorous methods. Since the range of illumination angles of the anamorphic system is different in x and y directions, one way to understand the involved phenomena, is to investigate and compare the impact of illumination angles for both the high-NA 4 8 anamorphic system at 0.55NA and the lower-NA 4 4 system at 0.33NA. We employ fully coherent that is single source point illumination and imaging to study the impact of the illumination direction on the most relevant lithographic metrics. These metrics include the resulting feature size or critical dimension (CD), the feature position, a local contrast or the normalized image log slope (NILS) and the best-focus position of the projected images. In this study, aerial images from a uniformly-distributed grid of 230 illumination positions were computed and analyzed. The results of the simulation study confirmed that larger illumination angles cause more pronounced shadowing effects and significant variations of the position and feature size versus the illumination direction. The larger demagnification direction of the anamorphic system involves a smaller object-side angular spread of the illumination direction, resulting in less pronounced variation of CD and position versus the illumination direction compared to the isomorphic system. Both systems exhibit a drop of the NILS for more oblique angles. However, the larger image side angles of the high-NA system result in more pronounced polarization effects, which reduce the NILS values compared to that of the lower NA system. The high NA achieved by anamorphic imaging increases the importance of 3D mask effects in EUV lithography. It is not a priori known, which of these 3D mask effects can be attributed to the absorber or the multilayer part of the mask. A hybrid mask simulation approach addresses this question. In the second part of this study, simulations using an hybrid of real and ideal mask elements were performed in an attempt to understand their individual effects of the mask elements and which mask element contributes to which of the observed effects.

Proceedings Article | 30 October 2017 Presentation + Paper

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

Eelco van Setten, Gerardo Bottiglieri, Laurens de Winter, John McNamara, Paul Rusu, Jan Lubkoll, Gijsbert Rispens, Jan van Schoot, Jens Timo Neumann, Matthias Roesch, Bernhard Kneer

Proceedings Volume 10450, 104500W (2017) https://doi.org/10.1117/12.2280624

KEYWORDS: Extreme ultraviolet lithography, Nanoimprint lithography, Photomasks, Extreme ultraviolet, Reflectivity, Scanners, Mirrors, Semiconducting wafers, Reticles, Imaging systems

Read Abstract +

To enable cost-effective shrink at the 3nm node and beyond, and to extend Moore’s law into the next decade, ASML is developing a new high-NA EUV platform. The high-NA system is targeted to feature a numerical aperture (NA) of 0.55 to extend the single exposure resolution limit to 8nm half pitch. The system is being designed to achieve an on-product-overlay (OPO) performance well below 2nm, a high image contrast to drive down local CD errors and to obtain global CDU at sub-1nm level to be able to meet customer edge placement error (EPE) requirements for the devices of the future. EUV scanners employ reflective Bragg multi-layer mirrors in the mask and in the Projection Optics Box (POB) that is used to project the mask pattern into the photoresist on the silicon wafer. These MoSi multi-layer mirrors are tuned for maximum reflectivity, and thus productivity, at 13.5nm wavelength. The angular range of incident light for which a high reflectivity at the reticle can be obtained is limited to ~ +/- 11o, exceeding the maximum angle occurring in current 0.33NA scanners at 4x demagnification. At 0.55NA the maximum angle at reticle level would extend up to 17o in the critical (scanning) direction and compromise the imaging performance of horizontal features severely. To circumvent this issue a novel anamorphic optics design has been introduced, which has a 4x demagnification in the X- (slit) direction and 8x demagnification in the Y- (scanning) direction as well as a central obscuration in the exit pupil. In this work we will show that the EUV high-NA anamorphic concept can successfully solve the angular reflectivity issues and provide good imaging performance in both directions. Several unique imaging challenges in comparison to the 0.33NA isomorphic baseline are being studied, such as the impact of the central obscuration in the POB and Mask-3D effects at increased NA that seem most pronounced for vertical features. These include M3D induced contrast loss and non-telecentricity. We will explore the solutions needed to mitigate these effects and to offer high quality imaging to be able to meet the required EPE performance in both orientations.

Proceedings Article | 20 October 2016 Paper

Anamorphic imaging at high-NA EUV: mask error factor and interaction between demagnification and lithographic metrics

Gerardo Bottiglieri, Thorsten Last, Alberto Colina, Eelco van Setten, Gijsbert Rispens, Jan van Schoot, Koen van Ingen Schenau

Proceedings Volume 10032, 100320B (2016) https://doi.org/10.1117/12.2250630

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Extreme ultraviolet lithography, Nanoimprint lithography, Semiconducting wafers, Reticles, Reflectivity, Scanners, Image quality

Read Abstract +

Proceedings Article | 18 March 2016 Paper

EUV high-NA scanner and mask optimization for sub-8nm resolution

Jan van Schoot, Koen van Ingen Schenau, Gerardo Bottiglieri, Kars Troost, John Zimmerman, Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser

Proceedings Volume 9776, 97761I (2016) https://doi.org/10.1117/12.2220150

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Reticles, Scanners, Semiconducting wafers, Source mask optimization, Wafer-level optics, Lithography, Imaging systems, Extreme ultraviolet, Neodymium, Ions

Read Abstract +

Proceedings Article | 16 November 2015 Paper

EUV High-NA scanner and mask optimization for sub 8 nm resolution

Jan van Schoot, Koen van Ingen Schenau, Gerardo Bottiglieri, Kars Troost, John Zimmerman, Sascha Migura, Bernhard Kneer, Jens Timo Neumann, Winfried Kaiser

Proceedings Volume 9635, 963503 (2015) https://doi.org/10.1117/12.2202258

KEYWORDS: Extreme ultraviolet lithography, Scanners, Photomasks, Reticles, Image resolution, Lithography, Wafer-level optics, Semiconducting wafers, Source mask optimization, EUV optics, Imaging systems, Nanoimprint lithography, Ions, Neodymium

Read Abstract +

Proceedings Article | 4 September 2015 Paper

Imaging performance of the EUV high NA anamorphic system

Koen van Ingen Schenau, Gerardo Bottiglieri, Jan van Schoot, Jens-Timo Neumann, Matthias Roesch

Proceedings Volume 9661, 96610S (2015) https://doi.org/10.1117/12.2195476

KEYWORDS: Photomasks, Imaging systems, Extreme ultraviolet, Nanoimprint lithography, Reticles, Semiconducting wafers, Electroluminescence, Ions, Nickel, Logic

Read Abstract +

Showing 5 of 22 publications

Conference Committee Involvement (1)

Computational Optics 2024

10 April 2024 | Strasbourg, France

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years