Dr. Jacek K. Tyminski Profile

Dr. Jacek K. Tyminski

Principla Scientist at Nikon Research Corp of America

SPIE Involvement:

Author

Publications (29)

SPIE Journal Paper | 30 March 2016

Lithographic imaging-driven pattern edge placement errors at the 10-nm node

Jacek Tyminski, Julia Sakamoto, Shane Palmer, Stephen Renwick

JM3, Vol. 15, Issue 02, 021402, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021402

KEYWORDS: Scanners, Optical proximity correction, Photomasks, Lithography, Metals, Error analysis, Overlay metrology, Semiconducting wafers, Statistical analysis, Optical lithography

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Proceedings Article | 15 March 2016 Paper

Lithographic imaging-driven pattern edge placement errors at 10nm node

Jacek Tyminski, Julia Sakamoto, Shane Palmer, Steven Slonaker, Stephen Renwick

Proceedings Volume 9780, 97800C (2016) https://doi.org/10.1117/12.2218146

KEYWORDS: Lithography, Optical lithography, Computational lithography, Optical proximity correction, Integrated circuit design, 193nm lithography, Performance modeling, Scanners, Optical design, Optical alignment, Semiconducting wafers, Monte Carlo methods, Image processing, Etching, Ions, Statistical analysis

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Proceedings Article | 18 March 2015 Paper

Single lithography exposure edge placement model

Jacek Tyminski

Proceedings Volume 9426, 94260B (2015) https://doi.org/10.1117/12.2086428

KEYWORDS: Scanners, Semiconducting wafers, Error analysis, Overlay metrology, Image processing, Optical lithography, Lithography, Manufacturing, Statistical analysis, Image acquisition

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Proceedings Article | 31 March 2014 Paper

Impact of topographic mask models on scanner matching solutions

Jacek Tyminski, Jan Pomplun, Stephen Renwick

Proceedings Volume 9052, 905218 (2014) https://doi.org/10.1117/12.2045919

KEYWORDS: Scanners, Photomasks, Fiber optic illuminators, Optimization (mathematics), Lithography, Computational lithography, Maxwell's equations, Optical proximity correction, Near field optics, Image acquisition

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Of keen interest to the IC industry are advanced computational lithography applications such as Optical Proximity Correction of IC layouts (OPC), scanner matching by optical proximity effect matching (OPEM), and Source Optimization (SO) and Source-Mask Optimization (SMO) used as advanced reticle enhancement techniques. The success of these tasks is strongly dependent on the integrity of the lithographic simulators used in computational lithography (CL) optimizers. Lithographic mask models used by these simulators are key drivers impacting the accuracy of the image predications, and as a consequence, determine the validity of these CL solutions. Much of the CL work involves Kirchhoff mask models, a.k.a. thin masks approximation, simplifying the treatment of the mask near-field images. On the other hand, imaging models for hyper-NA scanner require that the interactions of the illumination fields with the mask topography be rigorously accounted for, by numerically solving Maxwell’s Equations. The simulators used to predict the image formation in the hyper-NA scanners must rigorously treat the masks topography and its interaction with the scanner illuminators. Such imaging models come at a high computational cost and pose challenging accuracy vs. compute time tradeoffs. Additional complication comes from the fact that the performance metrics used in computational lithography tasks show highly non-linear response to the optimization parameters. Finally, the number of patterns used for tasks such as OPC, OPEM, SO, or SMO range from tens to hundreds. These requirements determine the complexity and the workload of the lithography optimization tasks. The tools to build rigorous imaging optimizers based on first-principles governing imaging in scanners are available, but the quantifiable benefits they might provide are not very well understood. To quantify the performance of OPE matching solutions, we have compared the results of various imaging optimization trials obtained with Kirchhoff mask models to those obtained with rigorous models involving solutions of Maxwell’s Equations. In both sets of trials, we used sets of large numbers of patterns, with specifications representative of CL tasks commonly encountered in hyper-NA imaging. In this report we present OPEM solutions based on various mask models and discuss the models’ impact on hyper- NA scanner matching accuracy. We draw conclusions on the accuracy of results obtained with thin mask models vs. the topographic OPEM solutions. We present various examples representative of the scanner image matching for patterns representative of the current generation of IC designs.

Proceedings Article | 12 April 2013 Paper

Topographic mask modeling with reduced basis finite element method

Jacek Tyminski, Jan Pomplun, Lin Zschiedrich, Donis Flagello, Tomiyuki Matsuyama

Proceedings Volume 8683, 86831C (2013) https://doi.org/10.1117/12.2011613

KEYWORDS: Photomasks, Finite element methods, Fiber optic illuminators, Scanners, Near field, Maxwell's equations, Lithography, Image acquisition, Computational lithography, Computer simulations

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Proceedings Article | 13 March 2012 Paper

Finite element models of lithographic mask topography

Lin Zschiedrich, Jacek Tyminski, Tomoya Noda, Sven Burger, Raluca Popescu, Tomoyuki Matsuyama, Jan Pomplun

Proceedings Volume 8326, 83261B (2012) https://doi.org/10.1117/12.916957

KEYWORDS: Finite element methods, Photomasks, Near field, Fiber optic illuminators, Scanners, Stanford Linear Collider, Image acquisition, Lithography, Semiconducting wafers, Computer simulations

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Proceedings Article | 25 September 2010 Paper

Reduced basis method for source mask optimization

Nakashima Toshiharu, Sven Burger, Jan Pomplun, Frank Schmidt, Donis Flagello, Lin Zschiedrich, Jacek Tyminski

Proceedings Volume 7823, 78230E (2010) https://doi.org/10.1117/12.866101

KEYWORDS: Source mask optimization, Chemical elements, Photomasks, Error analysis, Optimization (mathematics), Near field, Lithography, Maxwell's equations, Semiconducting wafers, Reliability

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Proceedings Article | 11 March 2010 Paper

Toward a consistent and accurate approach to modeling projection optics

Danping Peng, Steve Slonaker, Thuc Dam, Jacek Tyminski, Peter Hu, Vikram Tolani

Proceedings Volume 7640, 76402Y (2010) https://doi.org/10.1117/12.848252

KEYWORDS: Photomasks, Diffraction, Projection systems, Polarization, 3D modeling, Near field, Einsteinium, Near field optics, Spherical lenses, Semiconducting wafers

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Proceedings Article | 4 March 2010 Paper

Impact of scanner signatures on optical proximity correction

Yen-Liang Lu, George Bailey, Tomoyuki Matsuyama, Irene Su, Jacek Tyminski, Yung-Ching Mai, Jun-Cheng Lai, Kao-Tun Chen

Proceedings Volume 7640, 76400V (2010) https://doi.org/10.1117/12.845061

KEYWORDS: Optical proximity correction, Scanners, Photomasks, Fiber optic illuminators, Cadmium, Integrated circuits, Metrology, Tolerancing, Integrated optics, Diffraction

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Proceedings Article | 4 March 2010 Paper

Source-mask optimization (SMO): from theory to practice

Peter Hu, Ki-Ho Baik, Jacek Tyminski, Steven Slonaker, Linyong Pang, Vikram Tolani, Bob Gleason, Thuc Dam

Proceedings Volume 7640, 764028 (2010) https://doi.org/10.1117/12.848257

KEYWORDS: Source mask optimization, Photomasks, Photovoltaics, Fiber optic illuminators, Fluctuations and noise, Polarization, Lithography, Scanners, Optimization (mathematics), Calibration

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Proceedings Article | 11 May 2009 Paper

The impact of mask design on EUV imaging

Thomas Schmoeller, Jacek Tyminski, John Lewellen, Wolfgang Demmerle

Proceedings Volume 7379, 73792H (2009) https://doi.org/10.1117/12.824331

KEYWORDS: Photomasks, Extreme ultraviolet, Projection systems, Critical dimension metrology, Reflectivity, Extreme ultraviolet lithography, Image processing, Fiber optic illuminators, Imaging systems, Optical proximity correction

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Proceedings Article | 11 May 2009 Paper

Effect of scanner illumination and lens transmittance signatures on OPC accuracy

Apo Sezginer, Hsu-Ting Huang, Jacek Tyminski

Proceedings Volume 7379, 737910 (2009) https://doi.org/10.1117/12.824277

KEYWORDS: Optical proximity correction, Scanners, Calibration, Photomasks, Data modeling, Polarization, Lithography, Tolerancing, Systems modeling, Projection systems

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Proceedings Article | 16 March 2009 Paper

Scanner-dependent optical proximity effects

Toshiharu Nakashima, Ryuichi Inoue, Tomoyuki Matsuyama, Jacek Tyminski

Proceedings Volume 7274, 72740U (2009) https://doi.org/10.1117/12.810850

KEYWORDS: Scanners, Fiber optic illuminators, Data modeling, Optical proximity correction, Performance modeling, Optical imaging, Diffraction, Photomasks, Image acquisition, Lenses

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Proceedings Article | 4 December 2008 Paper

The impact of illuminator signatures on optical proximity effects

Stephen Renwick, Jacek Tyminski

Proceedings Volume 7140, 71402A (2008) https://doi.org/10.1117/12.804488

KEYWORDS: Fiber optic illuminators, Scanners, Polarization, Data modeling, Image acquisition, Photomasks, Statistical modeling, Diamond, Reticles, Imaging systems

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Proceedings Article | 11 April 2008 Paper

Analysis of OPC optical model accuracy with detailed scanner information

Satyendra Sethi, Yongfa Fan, Lena Zavyalova, Hua Song, Jacek Tyminski, Kevin Lucas, Qiaolin Zhang

Proceedings Volume 6924, 69241D (2008) https://doi.org/10.1117/12.774116

KEYWORDS: Optical proximity correction, TCAD, Metrology, Lithography, Scanners, Systems modeling, Photomasks, Data modeling, Wafer-level optics, Semiconducting wafers

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Proceedings Article | 1 November 2007 Paper

Modeling scanner signatures in the context of OPC

Jacek Tyminski, Kevin Lucas, Qiaolin Zhang

Proceedings Volume 6730, 673056 (2007) https://doi.org/10.1117/12.746724

KEYWORDS: Scanners, Optical proximity correction, Fiber optic illuminators, Lithography, Apodization, Lithographic illumination, Process modeling, Optical imaging, Data modeling, Computer simulations

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SPIE Journal Paper | 1 July 2007

Novel apodization and pellicle optical models for accurate optical proximity correction modeling at 45 and 32 nm

Qiaolin Zhang, Kevin Lucas, Paul Van Adrichem, Jacek Tyminski, Joseph Gordon

JM3, Vol. 6, Issue 03, 031003, (July 2007) https://doi.org/10.1117/12.10.1117/1.2783418

KEYWORDS: Apodization, Optical proximity correction, Pellicles, Data modeling, Lithography, Signal attenuation, Critical dimension metrology, Gaussian filters, Calibration, Optical filters

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Proceedings Article | 15 May 2007 Paper

The impact of scanner model vectorization on optical proximity correction

Jacek Tyminski, Tashiharu Nakashima, Kevin Lucas, Tomoyuki Matsuyama, Qiaolin Zhang

Proceedings Volume 6607, 66071L (2007) https://doi.org/10.1117/12.728968

KEYWORDS: Optical proximity correction, Scanners, Fiber optic illuminators, Error analysis, Critical dimension metrology, Photomasks, Polarization, Electronic design automation, Optical lithography, Image acquisition

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Low pass filtering taking place in the projection tools used by IC industry leads to a range of optical proximity effects resulting in undesired IC characteristics. To correct these predicable OPEs, EDA industry developed various, model-based correction methodologies. Of course, the success of this mission is strongly dependent on how complete the imaging models are. To represent the image formation and to capture the OPEs, the EDA community adopted various models based on simplified representations of the projection tools. Resulting optical proximity correction models are capable of correcting OPEs driven by the fundamental imaging conditions such as wavelength, illuminator layout, reticle technology, and lens numerical aperture, to name a few. It is well known in the photolithography community that OPEs are dependent on the scanner characteristics. Therefore, to reach the level of accuracy required by the leading edge IC designs, photolithography simulation has to include systematic scanner fingerprint data. These tool fingerprints capture excursions of the imaging tools from the ideal imaging setup conditions. They quantify the performance of key projection tool components such as illuminator and lens signatures. To address the imaging accuracy requirements, the scanner engineering and the EDA communities developed OPC models capable of correcting for imaging tools engineering attributes captured by the imaging tools fingerprints. Deployment of immersion imaging systems has presented the photolithography community with new opportunities and challenges. These advanced scanners, designed to image in deep sub-wavelength regime, incorporate features invoking the optical phenomena previously unexplored in commercial scanners. Most notably, the state of the art scanners incorporate illuminators with high degree of polarization control and projection lenses with hyper-NAs. The image formation in these advanced projectors exploits a wide range of vectorial interactions originating at the illuminator, on the pattern mask, in the projection lens and at the wafer. The presence of these, previously subdued phenomena requires that the imaging simulation methodologies be refined, increasing the complexity of the OPE models and optical proximity correction methodologies.

Proceedings Article | 26 March 2007 Paper

Polarization-dependent proximity effects

Toshiharu Nakashima, John Lewellen, Tomoyuki Matsuyama, Thomas Schmoeller, Jacek Tyminski

Proceedings Volume 6520, 65200E (2007) https://doi.org/10.1117/12.711626

KEYWORDS: Scanners, Diffraction, Fiber optic illuminators, Optical lithography, Polarization, Manufacturing, Apodization, Solids, Cadmium sulfide, Image acquisition

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Proceedings Article | 21 March 2007 Paper

Scanner-characteristics-aware OPC modeling and correction

Jacek Tyminski, Paul VanAdrichem, Qiaolin Zhang, Laurent Depre, Kevin Lucas

Proceedings Volume 6521, 65210Z (2007) https://doi.org/10.1117/12.711624

KEYWORDS: Optical proximity correction, Scanners, Critical dimension metrology, Fiber optic illuminators, Error analysis, Performance modeling, Reticles, Coastal modeling, Model-based design, Optical lithography

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Proceedings Article | 24 March 2006 Paper

Aerial image sensor: in-situ scanner aberration monitor

Tsuneyuki Hagiwara, Jacek Tyminski, Hiroshi Irihama, Naoto Kondo

Proceedings Volume 6152, 61523D (2006) https://doi.org/10.1117/12.656651

KEYWORDS: Artificial intelligence, Scanners, Monochromatic aberrations, Image quality, Manufacturing, Wavefronts, Diffraction gratings, Image sensors, Interferometers, Diffraction

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IC manufacture has to meet stringent requirements pushing the imaging tools beyond their limits. The key performance attribute of the imaging tool is the quality of the image projected on wafer plane. The image quality is controlled by the wavefront aberrations present in the projection lens pupil. Therefore the quality of the lenses can be represented by either various image quality metrics or by the data on the lens pupil aberration residua. Projection lens quality can be quantified by interferometers capturing the lens pupil residual aberration, leading to estimates of the image quality. These various techniques can be used off-line, testing projection lenses installed on a dedicated test bench, used during or after lens manufacture, or in-situ, testing the lenses installed in the projection tools, often at the IC manufacturing floor. These techniques have inherent tradeoffs in terms their accuracy, portability, ease-of-use and completeness of the aberration and imaging metrics. Such tradeoffs determine which technique is the most appropriate for various applications ranging from lens quality control during imaging tool manufacture, to tool qualification during its installation and setup, to tool monitoring and tuning during the IC manufacture. It is acknowledged within the scanner engineering community that qualification and maintenance of tools used for critical level pattering requires in-situ lens monitoring technique. Such method would also help to select and to fine tune the imaging tools to design-specific requirements of IC critical patterns. A preferred method of aberration monitoring should be highly compatible with routine scanner operation and should be independent of resist process conditions. This paper presents aerial image-based technique to monitor and to diagnose the quality of projection lenses used in scanners. The method involves aerial image sensor, AIS. We start with a discussion of the fundamental principles of operation and the key design issues impacting the accuracy of the technique. We follow with an examples of the AIS aberration test. These tests lead to a discussion of the method's capabilities to quantify the performance of the imaging tools.

Proceedings Article | 12 May 2005 Paper

Wavefront-based tool selection for critical level imaging

John Lewellen, Jacek Tyminski

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600224

KEYWORDS: Photomasks, Electroluminescence, Manufacturing, Critical dimension metrology, Phase shifts, Diamond, Optical lithography, Transparency, Range imaging, Feature extraction

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Proceedings Article | 12 May 2005 Paper

Technology qualification for 65-nm node

Toshiharu Nakashima, Jacek Tyminski

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600246

KEYWORDS: Imaging technologies, Photomasks, Process control, Picosecond phenomena, Manufacturing, Reticles, Phase shifts, Fiber optic illuminators, Image acquisition, Diffraction

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Proceedings Article | 26 June 2003 Paper

Simulation benchmarking

Takehito Kudo, Shigeru Hirukawa, Jacek Tyminski, Toshiharu Nakashima, Steve Slonaker

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485447

KEYWORDS: Picosecond phenomena, Optical lithography, Binary data, Computer simulations, Image acquisition, Cadmium, Electroluminescence, Photomasks, Phase shifts, Solids

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Proceedings Article | 26 June 2003 Paper

Imaging performance extendibility

Jacek Tyminski, Steve Slonaker

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485446

KEYWORDS: Optical lithography, Photomasks, Picosecond phenomena, Manufacturing, Wavefronts, Process engineering, Scanners, Phase shifts, Electroluminescence, Chemical elements

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Proceedings Article | 29 June 1998 Paper

CD control of ASIC polysilicon gate level

Sean McNamara, Ronald Gorham, Stephen Meisner, Jacek Tyminski

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310791

KEYWORDS: Critical dimension metrology, Metrology, Manufacturing, Optical lithography, Tolerancing, Cadmium, Photoresist processing, Fiber optic illuminators, Data modeling, Reticles

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As ASIC manufacture continues to evolve towards 0.35 micrometer, photolithography optimization becomes increasingly complex. I-line photolithography at these feature sizes results in proximity effects contributing to CD budgets and dominating the CD control. One of the critical levels of the current generation ASIC devices is the polysilicon gate level containing a set of lines in nesting configurations ranging from dense to isolated. The optical proximity effects of such geometries are pitch-dependent. Thus the key challenge of the gate level exposure is CD control of the features nested on a wide range of pitches. The state-of-the-art photolithography tools used for critical level manufacture are equipped with a wide range of illumination options including conventional, small-sigma, and off-axis. These options expand the exposure capabilities of steppers and complicate the optimization of the photolithography. The complexity of the image formation, coupled with the number of stepper exposure options, vastly expands the parameter space of photolithography optimization. The optimization of the photolithography process has to take into consideration the requirements of IC manufacture. These requirements include the CD tolerance, the depth of focus and the exposure latitude. The numeric value of each represents statistical and systematic factors influencing the yield of manufacture as well as the CD tolerance reflecting the IC performance goals. Our goal was to optimize the CD performance of critical level i-line photolithography. Our strategy combined resist model simulation and proof-of-principle testing. We analyzed a set of features with the nominal, pitch-independent CDs. We analyzed the CD range of variation for different pitches characteristic for the polysilicon gate level. The analysis was performed for a wide range of illumination/exposure conditions representing capabilities of the state-of-the-art, commercial i-line steppers. To qualify the exposure options, we have developed a metric taking into consideration the requirements of IC manufacture. We conducted systematic studies of the CD range versus illumination and exposure conditions. As a result, we identified the exposure strategies leading to the range of CD variation meeting the tolerance requirements of the ASIC manufacture. A methodology combining the resist image simulation and limited resist testing allowed us to find quickly the optimum exposure strategy supportive of manufacturing requirements. It also resulted in a great reduction of resources required to conduct the process characterization and the CD metrology. We applied this methodology to optimize the exposure condition of a current generation ASIC polysilicon gate level. The optimization methodology was verified experimentally. This discussion presents examples of optimization solutions. The report reviews the results of the resist modeling simulation, and reviews the results of the proof-of-principle metrology. We compare the modeling and the metrology and draw conclusions on the quality of the models' predictions. We interpret the model results in terms of CD characteristics of the critical level features exposed and developed in the resist. Finally, we assess the value of anchored resist simulation as a predictor of the CD characteristics.

Proceedings Article | 7 July 1997 Paper

Manufacturing optimization strategies for 0.35-um design rules

Toshihiro Sasaya, Jacek Tyminski, Arthur Winslow, Masaya Komatsu, Dean Humphrey, Sean McNamara

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275999

KEYWORDS: Manufacturing

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Critical level photolithography optimization for 0.35 μm design rules faces new challenges threatening the process control and jeopardizing manufacturing yields. To address these challenges we have adopted a methodology combining photolithography simulation and limited proof-of-principle DOE. It allowed us to analyze the process control requirements and to establish photolithography strategies resulting in optimum manufacturing performance. As manufacturing CD's continue to shrink towards and beyond the wave length at which photolithography is performed, the lithography process control becomes limited by optical proximity effects. The proximity effects modify the geometry of the reticle features printed in the resist and thus they impact both CD control and overlay performance. The proximity effects can be highly non-linear and thus difficult to quantify unless sophisticated analytical methods are adopted. Another challenge faced by IC manufacturing rose with the advent of illumination options [l, 2]. In particular, off-axis illumination options offered with commercial exposure tools expand the exposure capabilities of steppers. Inevitably, these new illuminators complicate optimization of photolithography process. If the optimization task is to be executed in a purely empirical fashion, the optimization resources requirements become prohibitive. To simplify the photolithography optimization cycle, we have developed methodology combining process modeling [3] and limited proof-of-principle testing; the modeling was done with Nikon Corporation's proprietary simulator. Our methodology was employed in photolithography process optimization of a set of critical levels used in manufacture of a DRAM chip. Photolithography modeling in support of the process optimization resulted in a set of illumination and projection optics alternatives. The optimization of illumination strategies involved conventional and off-axis exposure options. The modeling identified illumination tradeoffs in terms of process depth of focus, DOF, exposure latitude EL, and stepper throughput. The results of the analysis suggested off-axis illumination as a basis for a robust exposure process. The results of the modeling served as a basis for a reduced design-of-experiment, DOE, quantifying the CD characteristics of the levels. We present the results of photolithography optimization of a chosen critical level exposed with an i-line stepper, and discuss the merits of the methodology. The discussion presents examples of optimization solutions. This report reviews the results of the modeling, including aerial image analysis and resist simulation. The report also reviews the results of the proof-ofprinciple metrology. We compare the modeling and the metrology and draw conclusions on the quality of the models' predictions. We interpret the model results in terms of CD characteristics of the critical level features exposed and developed in the resist. The aerial image analysis and resist simulation allowed us to reduce the optimization space. This, in tum, reduced the resource required to conduct the limited, proof-of-principle verification. We stress the advantage of using the methodology combining process modeling together with limited, proof-of-principle metrology to simplify and to shorten the exposure optimization process.

Proceedings Article | 1 July 1991 Paper

Second-harmonic generation of mode-locked Nd:YAG and Nd:YLF lasers using LiB₃O₅

William Bischel, Jacek Tyminski, Murray Reed

Proceedings Volume 1410, (1991) https://doi.org/10.1117/12.43606

KEYWORDS: Nd:YAG lasers, Crystals, Second-harmonic generation, Neodymium lasers, Laser crystals, High power lasers, Harmonic generation, Continuous wave operation, Mode locking, Solid state lasers

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Proceedings Article | 1 April 1990 Paper

Materials for high-power second-harmonic generation

William Bischel, Jacek Tyminski, Edward Reed, George Frangineas

Proceedings Volume 1223, (1990) https://doi.org/10.1117/12.18397

KEYWORDS: Crystals, Ferroelectric materials, Nonlinear crystals, Distortion, Laser crystals, Solid state lasers, Refraction, Absorption, Second-harmonic generation, Phase matching

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Showing 5 of 29 publications

Conference Committee Involvement (3)

SPIE Photomask Technology

10 September 2013 | Monterey, California, United States

Photomask Technology

11 September 2012 | Monterey, California, United States

Photomask Technology

15 September 2009 | Monterey, California, United States

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