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On the other hand, since the resist pattern CD for the most advanced resist is very much different from the prediction of optical simulation, it is a challenge to build OPC models using the exposure result with the resist. In order to solve this issue, we have tried to use several litho parameters to reduce the gap between optical simulation and resist CDs for OPC modeling. In this paper we discuss the effect of the parameters to reduce the gap between optical model and actual resist behavior with keeping superior performance as much as possible. The method we mention may be a key to use the most advanced resist in near future. As a result the life of ArF immersion lithography in the critical layer would be extended than we expect today.
To enable managing such a large amount of data easily and to setup lithography tools smoothly, we have developed a total lithography system called Litho Turnkey Solution based on a new software application platform, which we call Plug and Play Manager (PPM). PPM has its own graphical user interface, which enables total management of various data. Here various data means recipes, sub-recipes, tuning-parameters, measurement results, and so on. Through PPM, parameter making by intelligent applications such as CDU/Overlay tuning tools can easily be implemented. In addition, PPM is also linked to metrology tools and the customer’s host computer, which enables data flow automation. Based on measurement data received from the metrology tools, PPM calculates correction parameters and sends them to the scanners automatically. This scheme can make calibration feedback loops possible. It should be noted that the abovementioned functions are running on the same platform through a user-friendly interface. This leads to smart scanner management and usability improvement.
In this paper, we will demonstrate the latest development status of Nikon’s total lithography solution based on PPM; describe details of each application; and provide supporting data for the accuracy and usability of the system. Keywords: exposure
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