Dr. Sébastien Barnola Profile

Dr. Sébastien Barnola

Head of Plasma Etching & Stripping Laboratory at CEA-LETI

SPIE Involvement:

Author

Publications (22)

Proceedings Article | 12 March 2024 Presentation + Paper

Presentation + Paper

Neogly QCL-based NI-CGM medical device

Jean-Guillaume Coutard, Rolf Aidam, Florent Bernet, Romain Blanc, Morgane Boucher-Doigneau, Daphnée Jobert, Thibault Le Roux-Mallouf, Grégoire Mathieu, Alexandra Metz, Cyrielle Monpeurt, Sophie Moulin, Freddy Runget, Stéphane Triomphe, Kevin Jourde, Sebastien Barnola, Olivier Lartigue, Marion Volpert, Toufiq Bria, Hélène Lefebvre

Proceedings Volume 12838, 1283802 (2024) https://doi.org/10.1117/12.2692660

KEYWORDS: Skin, Photoacoustic spectroscopy, Glucose, Sensors, Quantum cascade lasers, Design, Algorithm development, Blood, Clinical trials

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Proceedings Article | 23 March 2020 Paper

Paper

Cleaning chamber walls after ITO plasma etching process

Salma Younesy, Camille Petit-Etienne, Sébastien Barnola, Pascal Gouraud, Gilles Cunge

Proceedings Volume 11329, 113290V (2020) https://doi.org/10.1117/12.2549210

KEYWORDS: Plasma etching, Indium, Ions, Tin

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Proceedings Article | 10 April 2017 Presentation + Paper

Presentation + Paper

Nanoimprint, DSA, and multi-beam lithography: patterning technologies with new integration challenges

S. Landis, H. Teyssedre, G. Claveau, I. Servin, F. Delachat, M. L. Pourteau, A. Gharbi, P. Pimenta Barros, R. Tiron, L. Nouri, N. Possemé, M. May, P. Brianceau, S. Barnola, Y. Blancquaert, J. Pradelles, P. Essomba, A. Bernadac, B. Dal'zotto, S. Bos, M. Argoud, G. Chamiot-Maitral, A. Sarrazin, C. Tallaron, C. Lapeyre, L. Pain

Proceedings Volume 10149, 101490K (2017) https://doi.org/10.1117/12.2259966

KEYWORDS: Directed self assembly, Lithography, Line width roughness, Nanoimprint lithography, Semiconducting wafers, Etching, Electron beam lithography, System on a chip, Critical dimension metrology, Photoresist processing

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Proceedings Article | 23 March 2016 Paper

Paper

PMMA removal selectivity to PS using dry etch approach: sub-10nm patterning application

A. Sarrazin, N. Posseme, P. Pimenta Barros, S. Barnola, G. Claveau, A. Gharbi, M. Argoud, G. Chamiot-Maitral, R. Tiron, C. Nicolet, C. Navarro, C. Cardinaud

Proceedings Volume 9782, 97820G (2016) https://doi.org/10.1117/12.2220586

KEYWORDS: Directed self assembly, Polymethylmethacrylate, Chemistry, Picosecond phenomena, Etching, Xenon, Plasma, Carbon monoxide, Plasma etching, Semiconducting wafers

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Proceedings Article | 23 March 2016 Paper

Paper

Plasma etching processes for the integration of InP based compounds on 200mm Si wafer for photonic applications

E. Pargon, G. Gay, C. Petit-Etienne, M. Brihoum, M. Bizouerne, P. Burtin, S. Barnola

Proceedings Volume 9782, 97820C (2016) https://doi.org/10.1117/12.2221903

KEYWORDS: Plasma etching, Semiconducting wafers, Photonic integrated circuits, Semiconductor lasers, Silicon photonics, Optoelectronics, Silica, Anisotropic etching, Neodymium, Ions, Oxygen

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Proceedings Article | 19 March 2015 Paper

Paper

Template affinity role in CH shrink by DSA planarization

R. Tiron, A. Gharbi, P. Pimenta Barros, S. Bouanani, C. Lapeyre, S. Bos, A. Fouquet, J. Hazart, X. Chevalier, M. Argoud, G. Chamiot-Maitral, S. Barnola, C. Monget, V. Farys, S. Berard-Bergery, L. Perraud, C. Navarro, C. Nicolet, G. Hadziioannou, G. Fleury

Proceedings Volume 9423, 942317 (2015) https://doi.org/10.1117/12.2085819

KEYWORDS: Polymethylmethacrylate, Lithography, Semiconducting wafers, Picosecond phenomena, Etching, Error analysis, Optical lithography, Line edge roughness, Image processing, Directed self assembly

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Density multiplication and contact shrinkage of patterned templates by directed self-assembly (DSA) of block copolymers (BCP) stands out as a promising alternative to overcome the limitations of conventional lithography. The main goal of this paper is to investigate the potential of DSA to address contact and via levels patterning with high resolution by performing either CD shrink or contact multiplication. Different DSA processes are benchmarked based on several success criteria such as: CD control, defectivity (missing holes) as well as placement control. More specifically, the methodology employed to measure DSA contact overlay and the impact of process parameters on placement error control is detailed. Using the 300mm pilot line available in LETI and Arkema’s materials, our approach is based on the graphoepitaxy of PS-b-PMMA block copolymers. Our integration scheme, depicted in figure 1, is based on BCP self-assembly inside organic hard mask guiding patterns obtained using 193i nm lithography. The process is monitored at different steps: the generation of guiding patterns, the directed self-assembly of block copolymers and PMMA removal, and finally the transfer of PS patterns into the metallic under layer by plasma etching. Furthermore, several process flows are investigated, either by tuning different material related parameters such as the block copolymer intrinsic period or the interaction with the guiding pattern surface (sidewall and bottom-side affinity). The final lithographic performances are finely optimized as a function of the self-assembly process parameters such as the film thickness and bake (temperature and time). Finally, DSA performances as a function of guiding patterns density are investigated. Thus, for the best integration approach, defect-free isolated and dense patterns for both contact shrink and multiplication (doubling and more) have been achieved on the same processed wafer. These results show that contact hole shrink and multiplication approach using DSA is well compatible with the conventional integration used for CMOS technology.

Proceedings Article | 18 March 2015 Paper

Paper

Progresses in 300mm DUV photolithography for the development of advanced silicon photonic devices

Charles Baudot, Bertrand Szelag, Nacima Allouti, Corinne Comboroure, Sébastien Bérard-Bergery, Christian Vizioz, Sébastien Barnola, Fabien Gays, Denis Mariolle, Thomas Ferrotti, Aurélie Souhaité, Stéphane Brision, Christophe Kopp, Sylvie Menezo

Proceedings Volume 9426, 94260D (2015) https://doi.org/10.1117/12.2085800

KEYWORDS: Waveguides, Optical lithography, Silicon photonics, Silicon, Etching, Lithography, Photoresist materials, Wave propagation, Deep ultraviolet, 193nm lithography

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Proceedings Article | 17 March 2015 Paper

Paper

DSA planarization approach to solve pattern density issue

P. Pimenta Barros, A. Gharbi, Aurélien Sarrazin, R. Tiron, N. Posseme, S. Barnola, S. Bos, C. Tallaron, G. Claveau, X. Chevalier, M. Argoud, Isabelle Servin, C. Navarro, Célia Nicolet, C. Lapeyre, C. Monget

Proceedings Volume 9428, 94280D (2015) https://doi.org/10.1117/12.2086810

KEYWORDS: Polymethylmethacrylate, Etching, Critical dimension metrology, Picosecond phenomena, Semiconducting wafers, Chemistry, Scanning electron microscopy, Carbon monoxide, Dry etching, Directed self assembly

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Proceedings Article | 17 March 2015 Paper

Paper

Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach

Emmanuel Dupuy, E. Pargon, M. Fouchier, H. Grampeix, J. Pradelles, M. Darnon, P. Pimenta-Barros, S. Barnola, O. Joubert

Proceedings Volume 9428, 94280B (2015) https://doi.org/10.1117/12.2085812

KEYWORDS: Line edge roughness, Line width roughness, Plasma, Etching, Critical dimension metrology, Plasma etching, Silicon, Oxygen, Photoresist processing, Neodymium

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Proceedings Article | 28 March 2014 Paper

Paper

Plasma etching and integration challenges using alternative patterning techniques for 11nm node and beyond

S. Barnola, P. Pimenta Barros, C. Arvet, C. Vizioz, N. Posseme, A. Gharbi, M. Argoud, R. Tiron, J. Pradelles, L. Desvoivres, S. Barraud

Proceedings Volume 9054, 90540E (2014) https://doi.org/10.1117/12.2046251

KEYWORDS: Etching, Electron beam lithography, Polymethylmethacrylate, Silicon, Picosecond phenomena, Photomasks, Chemistry, Lithography, System on a chip, Metals

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Proceedings Article | 28 March 2014 Paper

Paper

300mm pilot line DSA contact hole process stability

M. Argoud, I. Servin, A. Gharbi, P. Pimenta Barros, K. Jullian, M. Sanche, G. Chamiot-Maitral, S. Barnola, R. Tiron, C. Navarro, X. Chevalier, C. Nicolet, G. Fleury, G. Hadziioannou, M. Asai, C. Pieczulewski

Proceedings Volume 9049, 904929 (2014) https://doi.org/10.1117/12.2046315

KEYWORDS: Polymethylmethacrylate, Etching, Lithography, Critical dimension metrology, Semiconductors, Electron beam lithography, Semiconducting wafers, Silicon, High volume manufacturing, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Etch challenges for DSA implementation in CMOS via patterning

P. Pimenta Barros, S. Barnola, A. Gharbi, M. Argoud, I. Servin, R. Tiron, X. Chevalier, C. Navarro, C. Nicolet, C. Lapeyre, C. Monget, E. Martinez

Proceedings Volume 9054, 90540G (2014) https://doi.org/10.1117/12.2046267

KEYWORDS: Etching, Polymethylmethacrylate, Picosecond phenomena, Plasma, Chemistry, Optical lithography, Argon, Dry etching, Dielectrics, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Contact holes patterning by directed self-assembly of block copolymers: What would be the Bossung plot?

A. Gharbi, R. Tiron, M. Argoud, X. Chevalier, J. Belledent, J. Pradelles, P. Pimenta Barros, C. Navarro, C. Nicolet, G. Hadziioannou, G. Fleury, S. Barnola

Proceedings Volume 9049, 90491N (2014) https://doi.org/10.1117/12.2046342

KEYWORDS: Critical dimension metrology, Optical lithography, Semiconducting wafers, Annealing, Scanning electron microscopy, Coating, Tolerancing, Lithography, Inspection, Directed self assembly

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Proceedings Article | 8 March 2014 Paper

Paper

Introducing photonic devices for 40Gbits/s wavelength division multiplexing transceivers on 300-mm SOI wafers using CMOS processes

Charles Baudot, Jean-Marc Fédéli, Delphine Marris-Morini, Boris Caire-Remonnay, Léopold Virot, Ségolène Olivier, André Myko, Philippe Grosse, Gilles Grand, Badhise Ben Bakir, Jean-Michel Hartmann, Nacima Allouti, Sébastien Barnola, Christian Vizioz, Maurice Rivoire, Aurélien Seignard, Nathalie Vulliet, Aurélie Souhaité, Sonia Messaoudène, Ian O'Connor, Laurent Vivien, Sylvie Menezo, Frédéric Boeuf

Proceedings Volume 8988, 89880O (2014) https://doi.org/10.1117/12.2042496

KEYWORDS: Germanium, Silicon, Waveguides, Semiconducting wafers, Etching, Photodiodes, Photomasks, Wavelength division multiplexing, Lithography, Doping

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Proceedings Article | 26 March 2013 Paper

Paper

The potential of block copolymer’s directed self-assembly for contact hole shrink and contact multiplication

R. Tiron, A. Gharbi, M. Argoud, X. Chevalier, J. Belledent, P. Pimmenta Barros, I. Servin, C. Navarro, G. Cunge, S. Barnola, L. Pain, M. Asai, C. Pieczulewski

Proceedings Volume 8680, 868012 (2013) https://doi.org/10.1117/12.2011477

KEYWORDS: Etching, Polymethylmethacrylate, Picosecond phenomena, Lithography, Polymers, 193nm lithography, Critical dimension metrology, Oxygen, Neodymium, Directed self assembly

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Proceedings Article | 21 March 2012 Paper

Paper

Sub-20nm hybrid lithography using optical, pitch-division, and e-beam

J. Belledent, M. Smayling, J. Pradelles, P. Pimenta-Barros, S. Barnola, L. Mage, B. Icard, C. Lapeyre, S. Soulan, L. Pain

Proceedings Volume 8323, 83230F (2012) https://doi.org/10.1117/12.916486

KEYWORDS: Electron beam lithography, Photomasks, Lithography, Optical lithography, Logic, Optics manufacturing, Semiconducting wafers, Double patterning technology, Neodymium, Scanning electron microscopy

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A roadmap extending far beyond the current 22nm CMOS node has been presented several times. [1] This roadmap includes the use of a highly regular layout style which can be decomposed into "lines and cuts."[2] The "lines" can be done with existing optical immersion lithography and pitch division with self-aligned spacers.[3] The "cuts" can be done with either multiple exposures using immersion lithography, or a hybrid solution using either EUV or direct-write ebeam.[ 4] The choice for "cuts" will be driven by the availability of cost-effective, manufacturing-ready equipment and infrastructure. Optical lithography improvements have enabled scaling far beyond what was expected; for example, soft x-rays (aka EUV) were in the semiconductor roadmap as early as 1994 since optical resolution was not expected for sub-100nm features. However, steady improvements and innovations such as Excimer laser sources and immersion photolithography have allowed some manufacturers to build 22nm CMOS SOCs with single-exposure optical lithography. With the transition from random complex 2D shapes to regular 1D-patterns at 28nm, the "lines and cuts" approach can extend CMOS logic to at least the 7nm node. The spacer double patterning for lines and optical cuts patterning is expected to be used down to the 14nm node. In this study, we extend the scaling to 18nm half-pitch which is approximately the 10-11nm node using spacer pitch division and complementary e-beam lithography. For practical reasons, E-Beam lithography is used as well to expose the "mandrel" patterns that support the spacers. However, in a production mode, it might be cost effective to replace this step by a standard 193nm exposure and applying the spacer technique twice to divide the pitch by 3 or 4. The Metal-1 "cut" pattern is designed for a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops. Since the final conductor is defined by a Damascene process, the "cut" patterns become islands of resist blocking hard-mask trenches. The shapes are often small and positioned on a dense grid making this layer to be the most critical one. This is why direct-write e-beam patterning, possibly using massively parallel beams, is well suited for this task. In this study, we show that a conventional shaped beam system can already pattern the 11nm node Metal-1 layer with reasonable overlay margin. The combination of design style, optical lithography plus pitch-division, and e-beam lithography appears to provide a scaling path far into the future.

Proceedings Article | 27 May 2009 Paper

Paper

Mask contribution on CD and OVL errors budgets for double patterning lithography

I. Servin, C. Lapeyre, S. Barnola, B. Connolly, R. Ploss, K. Nakagawa, P. Buck, M. McCallum

Proceedings Volume 7470, 747009 (2009) https://doi.org/10.1117/12.835171

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Reticles, Double patterning technology, Pellicles, Lithography, Image registration, Optical alignment, Scanners

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Proceedings Article | 16 March 2009 Paper

Paper

Integration of dry etching steps for double patterning and spacer patterning processes

S. Barnola, C. Lapeyre, I. Servin, C. Arvet, P. Maury, L. Mage

Proceedings Volume 7274, 72741X (2009) https://doi.org/10.1117/12.814856

KEYWORDS: Etching, Carbon, Double patterning technology, Photomasks, Optical lithography, Chemistry, Lithography, Critical dimension metrology, Plasma, Scanning electron microscopy

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Proceedings Article | 16 March 2009 Paper

Paper

Impact of CD and overlay errors on double-patterning processes

Céline Lapeyre, Sébastien Barnola, Isabelle Servin, Stéphanie Gaugirana, Vincent Salvetat, Nobutaka Magome, Andrew Hazelton, Martin McCallum

Proceedings Volume 7274, 72740W (2009) https://doi.org/10.1117/12.814165

KEYWORDS: Double patterning technology, Etching, Semiconducting wafers, Lithography, Photomasks, Image processing, Photoresist processing, Reticles, Line width roughness, Overlay metrology

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Proceedings Article | 16 March 2009 Paper

Paper

Achieving overlay budgets for double patterning

Andrew Hazelton, Nobutaka Magome, Shinji Wakamoto, Akira Tokui, Céline Lapeyre, Sébastien Barnola, Guillaume Jullien, Vincent Salvetat

Proceedings Volume 7274, 72740X (2009) https://doi.org/10.1117/12.813599

KEYWORDS: Double patterning technology, Optical alignment, Semiconducting wafers, Optical lithography, Distortion, Etching, Overlay metrology, Lithography, Reticles, Logic

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SPIE Journal Paper | 1 January 2009

Double-patterning requirements for optical lithography and prospects for optical extension without double patterning

Andrew Hazelton, Shinji Wakamoto, Shigeru Hirukawa, Martin McCallum, Nobutaka Magome, Jun Ishikawa, Céline Lapeyre, Isabelle Guilmeau, Sébastien Barnola, Stéphanie Gaugiran

JM3, Vol. 8, Issue 01, 011003, (January 2009) https://doi.org/10.1117/12.10.1117/1.3023077

KEYWORDS: Double patterning technology, Photomasks, Etching, Reticles, Lithography, Optical lithography, Semiconducting wafers, Image processing, Photoresist processing, Deposition processes

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Proceedings Article | 7 March 2008 Paper

Paper

Double patterning requirements for optical lithography and prospects for optical extension without double patterning

Andrew Hazelton, Shinji Wakamoto, Shigeru Hirukawa, Martin McCallum, Nobutaka Magome, Jun Ishikawa, Céline Lapeyre, Isabelle Guilmeau, Sébastien Barnola, Stéphanie Gaugiran

Proceedings Volume 6924, 69240R (2008) https://doi.org/10.1117/12.771914

KEYWORDS: Double patterning technology, Photomasks, Etching, Reticles, Semiconducting wafers, Lithography, Image processing, Photoresist processing, Optical lithography, Deposition processes

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Showing 5 of 22 publications

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