A diffraction-based measurement of overlay requires a target composed of two cells per direction of measurement, with induced shifts of opposite signs designed into each of the cells. We present a method for a measurement which only requires a single cell per direction. This is achieved by resolving the image in the pupil plane and using the angle of incidence inlieu of the induced shift. The use of single-celled targets reduces the target size by half and enables the placement of the target in-die, as well as reducing the measurement time. This single-cell measurement requires the calibration of the target’s optical stack height, which is done on a small number of two-cell targets. This calibration also produces a stable map of the aligned layers’ height profile across the wafer.
As the semiconductor industry rapidly approaches the 3nm technology node, on product overlay (OPO) requirements have become even tighter and, as a result, reduction of residual overlay errors have become more important and challenging. Metrology performance enhancements are required to meet these demands. Using angle-resolved pupil imaging, Scatterometry Based Overlay (SCOL®) is a unique overlay metrology architecture that includes massive multi-signal analysis to enable improved accuracy and residuals reduction. In this paper we present a new Rotated Quadrupole (RQ) illumination pattern for SCOL metrology systems designed to enable broad measurable landscape coverage, support additional target design pitches with smaller target dimensions, and improve tool-to-tool matching (TTTM). These improvements enable the SCOL measurement system to provide higher measurement accuracy, reduce residuals error, and improve robustness to process variation. In this paper we will cover theory, some use cases, and measured results.
Semiconductor manufacturers are increasingly motivated to reduce overlay (OVL) target size. The scribe line area is in high demand, especially as width reduction efforts persist. Furthermore, since overlay control challenges require a higher sampling density, there is a growing need to place ultra-small targets inside the active chip, especially for devices with a large area. One of the main challenges of this new reality is producing smaller cell (grating) sizes to form smaller overlay targets, while maintaining compatible measurements to the standard target size of the same design. To overcome this challenge on typical scatterometry-based overlay (SCOL®) targets, we describe a method developed to perform the preliminary evaluation on a standard cell size of 8μm. This method selects a scalable setup by predicting performance on a 3-5um cell with the same target design (TD) parameters. This allows chipmakers to qualify the OVL measurement during process development on standard size targets, with the confidence that the optimized measurement conditions will be carried over to the smaller targets, saving time and real estate. However, even for scalable designs, target size reduction necessarily forces some size-performance tradeoffs: factors that are negligible for a standard target size can have significant impact on a scaled-down version of the same target design. In this paper we analyze these factors, show how they relate to measurement indicators, and present a method to apply such indicators toward setup selection. For each setup candidate this method can provide predicted performance and measurability as a function of cell size, a powerful tool for target area reduction.
Overlay metrology plays a significant role in process and yield control for integrated circuit (IC) manufacturing. As the On-Product Overlay (OPO) in advance nodes is reduced to a few nanometers, a very small margin is left for measurement inaccuracy. We introduce a multi-wavelength (spectral) analysis and measurement method, capable of characterizing overlay inaccuracy signatures on the wafer, and quantifying and removing the inaccuracy portion of the overlay measurement, resulting in a more accurate measurement, better process control, and yield enhancement. This method was applied to SK hynix’s advanced process production wafers, demonstrating an enhancement in accuracy over single-wavelength based overlay measurements.
We show that an overlay (OVL) metrology system based on a scanning electron microscope can achieve accurate registration of buried and resist (top) structures. The positions were determined by both Back Scattered Electrons (BSE) and Secondary Electrons (SE). The accuracy was quantified for After-Development Inspection (ADI) of an advanced EUVL process. Results by linear tracking showed accuracy below 0.4nm, robust across process variation and target designs. The influence of various measurement conditions, e.g. Field of View, on position and OVL tracking was negligible. The measurement methodology presented is applicable for both standalone High Voltage SEM (HV-SEM) registration targets and optical targets, such as the Advanced Imaging Metrology (AIM®) target used by Imaging Based Overlay (IBO) metrology systems. Using SEM ADI OVL results as a calibration for optical overlay metrology tools we can demonstrate significant improvements in the optical ADI OVL accuracy on small targets like AIM in-die (AIMid).
On-product overlay (OPO) challenges are quickly becoming yield limiters for the latest IC technology nodes, requiring new and innovative solutions to meet the technology demands. One of the primary means for reducing OPO error is the measurement of the grid (on target) at after-develop inspection (ADI) correctly and accurately. To reduce the optical error in the measurement, signals from both high voltage scanning electron microscope (HV-SEM) technology and imaging based overlay (IBO) measurements at ADI can be leveraged. Using key performance indicators (KPIs) and information produced by multiple optical measurement conditions, it is possible to optimize SEM sampling across the wafer and to capture all relevant target deformations. The objective is to improve the accuracy of optical measurements by efficiently combining information from HV-SEM and optical metrology systems. This paper will demonstrate that the information extracted from electron-based metrology and IBO measurements can be used for direct measurement of target deformations, which feeds into advanced optical target diagnostics and utilized for de-correlation between asymmetries and overlay (OVL).
Scanner Focus window of the lithographic process becomes much smaller due to the shrink of the device node and multipatterning approach. Consequently, the required performance of scanner focus becomes tighter and more complicated. Focus control/monitoring methods such as “field-by-field focus control” or “intra-field focus control” is a necessity. Moreover, tight scanner focus performance requirement starts to raise another fundamental question: accuracy of the reported scanner focus.
The insufficient accuracy of the reported scanner focus using the existing methods originates from:
a) Focus measurement quality, which is due to low sensitivity of measured targets, especially around the nominal production focus.
b) The scanner focus is estimated using special targets, e.g. large pitch target and not using the device-like structures (irremovable aberration impact).
Both of these factors are eliminated using KLA-Tencor proprietary “Focus Offset” technology.
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