Mr. Frank Laske Profile

Frank Laske

Projectmanager at KLA MIE GmbH

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Author

Publications (38)

Proceedings Article | 10 April 2024 Presentation + Paper

Micro-scale in-device overlay

Boris Habets, Stefan Eyring, Mirko Wittkoetter, Frank Laske, Marc Filzen, Clemens Utzny

Proceedings Volume 12955, 1295518 (2024) https://doi.org/10.1117/12.3012648

KEYWORDS: Semiconducting wafers, Overlay metrology, Logic, Scanning electron microscopy, Design, Spatial resolution, Nonlinear optics, Interference (communication), Reproducibility, Target detection

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Proceedings Article | 16 September 2022 Paper

High-precision and cost-effective EUV reticle defect registration with integrated grid matching using KLA LMS IPRO and FlashScan

P. Y. Portnichenko, F. Oezdogan, L. Dawahre, O. Lohse, B. Kalsbeck, P. Jain, H. Steigerwald, S. Ismail, F. Laske

Proceedings Volume 12325, 123250E (2022) https://doi.org/10.1117/12.2642100

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Metrology, Reticles, Optical alignment, Particles, Manufacturing, Defect inspection

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Proceedings Article | 13 June 2022 Presentation

Multi-layer, any-shape on-device overlay metrology

Stefan Eyring, Deepak Selvanathan, William Blanton, Nimrod Shuall, Frank Laske

Proceedings Volume PC12053, PC120530P (2022) https://doi.org/10.1117/12.2626772

KEYWORDS: Overlay metrology, Scanning electron microscopy, Electron microscopes, Multilayers, Measurement devices, Databases

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Proceedings Article | 20 October 2021 Presentation + Paper

High-precision and cost-effective EUV reticle defect registration with integrated grid matching using KLA LMS IPRO and FlashScan

P. Portnichenko, F. Oezdogan, L. Dawahre, O. Lohse, B. Kalsbeck, P. Jain, H. Steigerwald, S. Ismail, F. Laske

Proceedings Volume 11855, 1185504 (2021) https://doi.org/10.1117/12.2600957

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Metrology, Reticles, Optical alignment, Particles, Manufacturing, Defect inspection, Silicon

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Proceedings Article | 22 February 2021 Presentation + Paper

High voltage scanning electron microscope overlay metrology accuracy for after development inspection

S. Czerkas, N. Gutman, R. Gronheid, E. Gurevich, R. Wang, Y. Feler, M. Zaberchik, Y. Grauer, H. Stoschus, Y. Uziel, U. Pohlmann, F. Laske

Proceedings Volume 11611, 116110B (2021) https://doi.org/10.1117/12.2583710

KEYWORDS: Overlay metrology, Scanning electron microscopy, Inspection, Electron microscopes, Optical metrology, Optical lithography, New and emerging technologies, Metrology, Integrated optics, Imaging metrology

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Proceedings Article | 20 March 2020 Presentation + Paper

Optical imaging metrology calibration using high voltage scanning electron microscope at after-development inspection for advanced processes

N. Gutman, I. Tarshish, R. Gronheid, C. Dror, D. Michelsson, H. Backhauss, L. Levin, V. Levinski, Y. Paskover, L. Yerushalmi, T. Heidrich, S. Czerkas, U. Pohlmann, F. Laske

Proceedings Volume 11325, 113251X (2020) https://doi.org/10.1117/12.2551797

KEYWORDS: Scanning electron microscopy, Overlay metrology, Metrology, Calibration, Optical calibration

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Proceedings Article | 12 October 2018 Presentation

Fast local registration measurements for efficient e-beam writer qualification and correction: EMLC18 Best Paper (Conference Presentation)

Klaus-Dieter Roeth, Hendrik Steigerwald, Runyuan Han, Oliver Ache, Frank Laske

Proceedings Volume 10810, 108100A (2018) https://doi.org/10.1117/12.2506286

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Mask manufacturers are facing major reticle metrology challenges, driving the need for cost‐effective solutions that provide tighter registration specifications and on‐device registration qualification. E‐beam mask writers’ local registration error may have a critical impact on the error contribution of the reticles to wafer overlay, as it is very local and most likely is not revealed with standard quality control schemes and sampling. The reticle error signatures are, of course, writing‐strategy‐dependent, but may also be caused by residual deflector alignment issues, thus leading to a very local but potentially critical non‐correctable overlay error on the wafer. Since the e‐beam writer strategy does not differ significantly between ArFi masks and EUV masks, we expect a similar error signature for both mask types. We will present data which demonstrates local registration errors that can be correlated to the writing swathes of state‐of‐the‐art e‐beam writers and multi‐pass strategies, potentially leading to systematic device registration errors versus design of close to 2nm. Furthermore, error signatures for local charging and process effects are indicated by local registration measurements resulting in systematic error, also on the order of 2nm. A unique measurement methodology, Local Registration Metrology, is presented that allows for dense sampling of reticle dies to characterize the local e‐beam registration error. Several thousand sites in a region of interest with length and width of a few hundred microns are measured. LMS IPRO metrology algorithms enable parallel registration measurement of all individual sites for fast and accurate metrology. High throughput allows completion of Local Registration measurement within a few minutes instead of exceeding a day of measurement time with conventional registration metrology strategies. This capability enables mask users to add local registration quality control to ensure the local wafer pattern placement error contribution by a mask is within the acceptable tolerance. In addition, based on the results of Local Registration Metrology, e‐beam mask writer corrections via feed forward can now be developed to significantly reduce local overlay error on wafer caused by the reticles.

Proceedings Article | 19 September 2018 Paper

Fast local registration measurements for efficient e-beam writer qualification and correction

Klaus-Dieter Roeth, Hendrik Steigerwald, Runyuan Han, Oliver Ache, Frank Laske

Proceedings Volume 10775, 107750G (2018) https://doi.org/10.1117/12.2325627

KEYWORDS: Reticles, Photomasks, Image registration, Semiconducting wafers, Extreme ultraviolet, Overlay metrology, Metrology, Manufacturing, Lithography

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Proceedings Article | 12 June 2018 Paper

Enabling accurate and cost-effective registration metrology on EUVL masks

Runyuan Han, Hendrik Steigerwald, Frank Laske, Klaus-Dieter Roeth

Proceedings Volume 10807, 108070M (2018) https://doi.org/10.1117/12.2325128

KEYWORDS: Extreme ultraviolet, Metrology, Photomasks, Extreme ultraviolet lithography, Overlay metrology, Semiconducting wafers, Reticles

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Proceedings Article | 13 March 2018 Paper

LMS IPRO: Enabling local registration measurements for efficient e-beam writer correction

Hendrik Steigerwald, Oliver Ache, Runyuan Han, Frank Laske, Klaus-Dieter Roeth

Proceedings Volume 10585, 105851V (2018) https://doi.org/10.1117/12.2303959

KEYWORDS: Reticles, Photomasks, Image registration, Semiconducting wafers, Extreme ultraviolet, Metrology, Overlay metrology, Manufacturing, Time metrology, Lithography

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Proceedings Article | 23 October 2015 Paper

Accurate mask registration on tilted lines for 6F2 DRAM manufacturing

K. D. Roeth, W. Choi, Y. Lee, S. Kim, D. Yim, F. Laske, M. Ferber, M. Daneshpanah, E. Kwon

Proceedings Volume 9635, 963506 (2015) https://doi.org/10.1117/12.2202818

KEYWORDS: Photomasks, Overlay metrology, Reticles, Semiconducting wafers, Metrology, Image registration, Manufacturing, Ions, Scanners, Error analysis

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Proceedings Article | 9 July 2015 Paper

Investigation of local registration performance of IMS Nanofabrication’s Multi-Beam Mask Writer

Daniel Chalom, Jan Klikovits, David Geist, Peter Hudek, Stefan Eder-Kapl, Mehdi Daneshpanah, Frank Laske, Stefan Eyring, Klaus-Dieter Roeth

Proceedings Volume 9658, 965805 (2015) https://doi.org/10.1117/12.2196388

KEYWORDS: Photomasks, Metrology, Image registration, Nanofabrication, Calibration, Reticles, Beam shaping, Manufacturing, Lithography, Model-based design

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Proceedings Article | 28 July 2014 Paper

Proximity corrected accurate in-die registration metrology

M. Daneshpanah, F. Laske, M. Wagner, K.-D. Roeth, S. Czerkas, H. Yamaguchi, N. Fujii, S. Yoshikawa, K. Kanno, H. Takamizawa

Proceedings Volume 9256, 92560F (2014) https://doi.org/10.1117/12.2072074

KEYWORDS: Photomasks, Metrology, Semiconducting wafers, Model-based design, Near field optics, Reticles, Autoregressive models, Overlay metrology, Systems modeling, Logic

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Proceedings Article | 28 July 2014 Paper

In-die registration measurement using novel model-based approach for advanced technology masks

Shunsuke Sato, Frank Laske, Shinji Kunitani, Tatsuhiko Kamibayashi, Akira Fuse, Naoki Takahashi, Klaus-Dieter Roeth, Slawomir Czerkas, Mehdi Daneshpanah, Yoshinori Nagaoka

Proceedings Volume 9256, 92560E (2014) https://doi.org/10.1117/12.2070399

KEYWORDS: Photomasks, Image registration, Model-based design, Semiconducting wafers, Overlay metrology, Data modeling, Metrology, Semiconductors, Data processing, Metals

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Proceedings Article | 2 April 2014 Paper

Mask contribution to intra-field wafer overlay

William Chou, Hsien-Min Chang, Chao Yin Chen, M. Wagner, K.-D. Roeth, S. Czerkas, M. Ferber, M. Daneshpanah, F. Laske, R. Chiang, S. Klein

Proceedings Volume 9050, 90501Q (2014) https://doi.org/10.1117/12.2049000

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, Overlay metrology, Metrology, Logic, Data modeling, Lithography, Process control, Ions

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Proceedings Article | 1 October 2013 Paper

Changing technology requirements of mask metrology

Klaus-Dieter Roeth, Mark Wagner, Frank Laske

Proceedings Volume 8886, 88860J (2013) https://doi.org/10.1117/12.2047087

KEYWORDS: Photomasks, Metrology, Reticles, Image registration, Pellicles, Semiconducting wafers, Lithography, Overlay metrology, Manufacturing, Extreme ultraviolet

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Proceedings Article | 16 September 2013 Paper

In-die mask registration for multi-patterning

F. Laske, S. Kunitani, T. Kamibayashi, M. Yamana, A. Fuse, M. Wagner, K.-D. Roeth, M. Ferber, M. Daneshpanah, S. Czerkas, H. Sakaguchi

Proceedings Volume 8880, 888024 (2013) https://doi.org/10.1117/12.2027200

KEYWORDS: Photomasks, Semiconducting wafers, Metrology, Reticles, Image registration, Overlay metrology, Model-based design, Manufacturing, Lithography, Error analysis

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Proceedings Article | 14 October 2011 Paper

Evaluation of KLA-Tencor LMS IPRO5 beta system for 22nm node registration and overlay applications

M. Ferber, F. Laske, K.-D. Röth, D. Adam

Proceedings Volume 8166, 81661F (2011) https://doi.org/10.1117/12.896850

KEYWORDS: Photomasks, Overlay metrology, Semiconducting wafers, Metrology, Reticles, Image registration, Extreme ultraviolet, Double patterning technology, Detection and tracking algorithms, Edge detection

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Proceedings Article | 20 April 2011 Paper

Impact of pellicle on overlay in double patterning lithography

Oliver Loeffler, Frank Laske, Michael Ferber, Klaus-Dieter Roeth, Lin Chua, You Seung Jin, Gino Marcuccilli, Venkat Nagaswami

Proceedings Volume 7971, 79712D (2011) https://doi.org/10.1117/12.879905

KEYWORDS: Pellicles, Photomasks, Reticles, Personal protective equipment, Double patterning technology, Lithography, Distortion, Image registration, Adhesives, Error analysis

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Proceedings Article | 2 April 2011 Paper

New directions in image placement metrology

K.-D. Roeth, O. Loeffler, J. Richter, A. Wiswesser, F. Laske, D. Adam, M. Ferber

Proceedings Volume 7985, 79850F (2011) https://doi.org/10.1117/12.883771

KEYWORDS: Photomasks, Metrology, Reticles, Semiconducting wafers, Distortion, Lithography, Pellicles, Overlay metrology, Double patterning technology, Manufacturing

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Proceedings Article | 29 March 2011 Paper

Mask registration impact on intrafield on-wafer overlay performance

Guo-Tsai Huang, Alex Chen, Tung-Yaw Kang, S. C. Lee, Frank Laske, Klaus-Dieter Roethe, DongSub Choi, Chiang Reinhart, John Robinson, You Seung Jin, Lin Chua, David Tien, Venkat Nagaswami

Proceedings Volume 7971, 797106 (2011) https://doi.org/10.1117/12.879485

KEYWORDS: Photomasks, Semiconducting wafers, Overlay metrology, Scanners, Image registration, Error analysis, Optical lithography, Lithography, Double patterning technology, Reticles

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Proceedings Article | 25 September 2010 Paper

In-Die registration metrology: design data preparation solution

Frank Laske, Loc Ho, Michael Ferber, Klaus-Dieter Roeth, Dieter Adam, Stephen Kim, Seurien Chou

Proceedings Volume 7823, 78232M (2010) https://doi.org/10.1117/12.864281

KEYWORDS: Metrology, Image registration, Photomasks, Measurement devices, Double patterning technology, Semiconducting wafers, Reticles, Image processing, Detection and tracking algorithms, Overlay metrology

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Proceedings Article | 25 September 2010 Paper

Performance evaluation results on 2Xnm node enabler for mask registration metrology

O. Loeffler, J. Richter, A. Wiswesser, F. Laske, D. Adam, M. Ferber, K.-D. Roeth

Proceedings Volume 7823, 78232P (2010) https://doi.org/10.1117/12.864683

KEYWORDS: Photomasks, Reticles, Metrology, Pellicles, Overlay metrology, Semiconducting wafers, Distortion, Lithography, Double patterning technology, Manufacturing

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Proceedings Article | 25 September 2010 Paper

Improving registration measurement capability by defining a 2D grid standard using multiple registration measurement tools

O. Loeffler, G. Antesberger, A. Ullrich, J. Richter, A. Wiswesser, Masaru Higuchi, Tatsuhiko Kamibayashi, F. Laske, D. Adam, M. Ferber, K.-D. Roeth

Proceedings Volume 7823, 78232K (2010) https://doi.org/10.1117/12.864459

KEYWORDS: Calibration, Metrology, Image registration, Photomasks, Standards development, Double patterning technology, Manufacturing, Lithography, Image processing, Reticles

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Proceedings Article | 28 May 2010 Paper

Advanced mask-to-mask overlay analysis for next generation technology node reticles

Klaus-Dieter Roeth, Frank Laske, Karl-Heinrich Schmidt, Dieter Adam, Oliver Ache, David Ilsen

Proceedings Volume 7748, 77480L (2010) https://doi.org/10.1117/12.867720

KEYWORDS: Reticles, Photomasks, Overlay metrology, Double patterning technology, Metrology, Manufacturing, Semiconducting wafers, Error analysis, Image registration, Spatial frequencies

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Proceedings Article | 2 April 2010 Paper

Mask registration and wafer overlay

Chulseung Lee, Changjin Bang, Myoungsoo Kim, Hyosang Kang, Dohwa Lee, Woonjae Jeong, Ok-Sung Lim, Seunghoon Yoon, Jaekang Jung, Frank Laske, Lidia Parisoli, Klaus-Dieter Roeth, John Robinson, Sven Jug, Pavel Izikson, Berta Dinu, Amir Widmann, DongSub Choi

Proceedings Volume 7638, 76382I (2010) https://doi.org/10.1117/12.846321

KEYWORDS: Photomasks, Semiconducting wafers, Overlay metrology, Scanners, Pellicles, Metrology, Image registration, Distance measurement, Distortion, Double patterning technology

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Proceedings Article | 2 April 2010 Paper

In-depth overlay contribution analysis of a poly-layer reticle

Frank Laske, J. Whittey, K.-D. Roeth, J. McCormack, D. Adam, J. Bender, C. Berglund, M. Takac, Seurien Chou

Proceedings Volume 7638, 76382E (2010) https://doi.org/10.1117/12.848343

KEYWORDS: Reticles, Error analysis, Photomasks, Image registration, Metrology, Overlay metrology, Semiconducting wafers, Manufacturing, Spatial frequencies, Data analysis

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Proceedings Article | 23 September 2009 Paper

Measurement sampling frequency impact on determining magnitude of pattern placement errors on photomasks

J. Whittey, F. Laske, K.-D. Roeth, J. McCormack, D. Adam, J. Bender, C. N. Berglund, M. Takac, Seurien Chou

Proceedings Volume 7488, 74881I (2009) https://doi.org/10.1117/12.833495

KEYWORDS: Reticles, Error analysis, Photomasks, Image registration, Metrology, Manufacturing, Semiconducting wafers, Statistical analysis, Data analysis, Calibration

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Proceedings Article | 23 September 2009 Paper

Experimental test results of pattern placement metrology on photomasks with laser illumination source designed to address double patterning lithography challenges

Klaus-Dieter Roeth, Frank Laske, Michael Heiden, Dieter Adam, Lidia Parisoli, Slawomir Czerkas, John Whittey, Karl-Heinrich Schmidt

Proceedings Volume 7488, 74881M (2009) https://doi.org/10.1117/12.833203

KEYWORDS: Metrology, Photomasks, Double patterning technology, Reticles, Deep ultraviolet, Pellicles, Laser development, Lithographic illumination, Lithography, Image registration

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Proceedings Article | 27 May 2009 Paper

Registration metrology on double patterning reticles

Karl-Heinrich Schmidt, Klaus-Dieter Röth, Frank Laske, Jochen Bender, Dieter Adam, Oliver Ache

Proceedings Volume 7470, 74700N (2009) https://doi.org/10.1117/12.835185

KEYWORDS: Photomasks, Overlay metrology, Reticles, Metrology, Double patterning technology, Lithography, Image registration, Immersion lithography, Manufacturing, Semiconducting wafers

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Proceedings Article | 11 May 2009 Paper

In-die mask registration metrology for 32nm node DPT lithography

Klaus-Dieter Roeth, Frank Laske, Michael Heiden, Dieter Adam, Artur Boesser, Klaus Rinn, André Schepp, Jochen Bender

Proceedings Volume 7379, 737915 (2009) https://doi.org/10.1117/12.824282

KEYWORDS: Metrology, Photomasks, Reticles, Detection and tracking algorithms, Algorithm development, Edge detection, Image registration, Lithography, Double patterning technology, Manufacturing

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Proceedings Article | 24 March 2009 Paper

In-die registration metrology on future-generation reticles

Klaus-Dieter Roeth, Frank Laske, Hiroshi Kinoshita, Daisuke Kenmochi, Karl-Heinrich Schmidt, Dieter Adam

Proceedings Volume 7272, 72722W (2009) https://doi.org/10.1117/12.813944

KEYWORDS: Reticles, Metrology, Photomasks, Image registration, Lithography, Edge detection, Detection and tracking algorithms, Scanning electron microscopy, Overlay metrology, Double patterning technology

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Proceedings Article | 17 October 2008 Paper

World wide matching of registration metrology tools of various generations

F. Laske, A. Pudnos, L. Mackey, P. Tran, M. Higuchi, C. Enkrich, K.-D. Roeth, K.-H. Schmidt, D. Adam, J. Bender

Proceedings Volume 7122, 712230 (2008) https://doi.org/10.1117/12.802941

KEYWORDS: Photomasks, Metrology, Manufacturing, Distortion, Semiconductors, Image registration, Software development, Spatial frequencies, Process modeling, Data modeling

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Proceedings Article | 19 May 2008 Paper

Registration measurement capability of VISTEC LMS IPRO4 with focus on small features

Christian Enkrich, Gunter Antesberger, Oliver Loeffler, Klaus-Dieter Roeth, Frank Laske, Karl-Heinrich Schmidt, Dieter Adam

Proceedings Volume 7028, 70282Y (2008) https://doi.org/10.1117/12.793104

KEYWORDS: Image registration, Photomasks, Error analysis, Metrology, Cadmium, Critical dimension metrology, Reticles, Double patterning technology, Quartz, Manufacturing

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Proceedings Article | 2 May 2008 Paper

45nm node registration metrology on LTEM EUV reticles

Frank Laske, Hiroshi Kinoshita, Naoki Nishida, Daisuke Kenmochi, Hitoshi Ota, Yukitake Tanioka, Slawomir Czerkas, Karl-Heinrich Schmidt, Dieter Adam, Klaus-Dieter Roeth

Proceedings Volume 6792, 67920Y (2008) https://doi.org/10.1117/12.798939

KEYWORDS: Extreme ultraviolet, Photomasks, Quartz, Reticles, Metrology, Extreme ultraviolet lithography, Image registration, Tolerancing, Temperature metrology, Time metrology

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Proceedings Article | 3 May 2007 Paper

First measurement data obtained on the new Vistec LMS IPRO4

Dieter Adam, Artur Boesser, Michael Heiden, Jochen Bender, Frank Laske, Klaus-Dieter Röth

Proceedings Volume 6533, 65330I (2007) https://doi.org/10.1117/12.736972

KEYWORDS: Photomasks, Metrology, Reticles, Image registration, Tolerancing, Optics manufacturing, Overlay metrology, Interferometers, Control systems, Semiconductors

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Proceedings Article | 20 October 2006 Paper

Analysis of the Vistec LMS IPRO3 performance and accuracy enhancement techniques

Gunter Antesberger, Sven Knoth, Frank Laske, Jens Rudolf, Eric Cotte, Benjamin Alles, Carola Bläsing, Wolfgang Fricke, Klaus Rinn

Proceedings Volume 6349, 63491M (2006) https://doi.org/10.1117/12.686089

KEYWORDS: Error analysis, Reticles, Distortion, Calibration, Photomasks, Image registration, Statistical analysis, Ceramics, Statistical methods, Interferometers

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Proceedings Article | 20 May 2006 Paper

Measurement tool influence on CD results on photolithographic masks

Jan Richter, Roman Liebe, Frank Laske, Jens Rudolf, Torben Heins

Proceedings Volume 6283, 628315 (2006) https://doi.org/10.1117/12.681867

KEYWORDS: Critical dimension metrology, Photomasks, Calibration, Scanning electron microscopy, Etching, Dry etching, Metrology, Photoresist processing, Phase shifts, Atomic force microscopy

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The precise targeting of critical dimension (CD) features on photolithographic masks is an essential part of the mask production process. It is straight forward that the usual decrease of specification numbers can only be achieved using cutting edge CD Metrology tools. That also implies that the most advanced CD tool might change from node to node and over time mask houses accommodate a small variety of different tools. Therefore, it is an important task of current mask metrology to ensure accurate matching and calibration and also to transfer these standards precisely over time. Here, we investigate the influences of the photolithographic mask material and the resist type on critical dimension measurements utilizing one Atomic Force Microscope (AFM), two CD-Scanning electrical microscopes (CD-SEM) by different suppliers and one optical CD tool. Simulating usual mask house strategies we defined one CD tool as golden tool and measured a 700 A chrome mask on it. This reference measurement was then repeated on all other tools and each of them was matched to the golden tool using standard procedures. Once matching was achieved 5 other masks were measured on all tools with exactly the same settings as the reference measurements. In all we varied the material COG, Mosi193, Mosi248, Chrome thickness 700A and 1000A and different resists. We do observe that calibration within the CD SEM tool class works very well for linearity, but with detectable offset in the range of a couple of nm for different reference masks used. Cross-calibration on the other hand from optical CD to CD SEM tools shows significant differences for process variations, layer thickness and different materials. These findings strongly point out that first of all cross calibration is extremely difficult with current metrology tools and can not be utilized for high end products with the necessary precision. And secondly, even matching within tool classes is material dependent which has to be considered for accurate tool to tool matching.

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