Dr. Ronald G. Dixson Profile

Dr. Ronald G. Dixson

Physicist at National Institute of Standards and Technology

SPIE Involvement:

Author

Publications (77)

Proceedings Article | 12 March 2024 Presentation

Bullseye! Accurate integration of quantum dots and bullseye cavities

Craig Copeland, Adam Pintar, Ronald Dixson, Ashish Chanana, Kartik Srinivasan, Daron Westly, B. Robert Ilic, Marcelo Davanco, Samuel Stavis

Proceedings Volume PC12893, PC128930A (2024) https://doi.org/10.1117/12.2692245

KEYWORDS: Quantum dots, Lithography, Quantum devices, Microscopes, Cryogenics, Calibration, Yield improvement, Quantum processes, Optical microscopy, Distortion

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Proceedings Article | 30 April 2023 Presentation

A total shift show: submilliradian tilt goniometry in scanning electron microscopy

Andrew Madison, John Villarrubia, Daron Westly, Ronald Dixson, Craig Copeland, John Gerling, Katherine Cochrane, Alan Brodie, Lawrence Muray, J. Alexander Liddle, Samuel Stavis

Proceedings Volume 12496, 1249606 (2023) https://doi.org/10.1117/12.2673963

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Proceedings Article | 13 June 2022 Presentation

Dude, where’s my beam? Placement accuracy by localization microscopy

Andrew Madison, Craig Copeland, Ronald Dixson, B. Robert Ilic, J. Alexander Liddle, Samuel Stavis

Proceedings Volume PC12054, PC120540I (2022) https://doi.org/10.1117/12.2640143

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Beam placement accuracy is fundamental to advanced lithography and patterning. As applications of focused ion beams in semiconductor manufacturing and adjacent topics become more demanding, our titular question on the unknown whereabouts of a beam becomes more pressing to answer. Such a question may seem frivolous, but in reality, is quite serious and nontrivial to answer. In a previous study, we identified micrometer-scale systematic errors of feature placement by our focused ion beam across an ultrawide patterning field. Such errors are of particular concern for machining standards that provide reference positions, such as aperture arrays for optical microscopy. , Conversely, our recent advances of localization traceability present a new opportunity to not only measure but also improve placement accuracy. In the present study, we quantitate feature positions by critical-dimension localization microscopy with ultrahigh throughput, revealing complex errors that extend to appalling values of several micrometers across a submillimeter field. We introduce a novel correction that reduces scale errors by three orders of magnitude and distortion errors by more than a factor of 40, dramatically improving the placement accuracy of our focused ion beam. Although this improvement occurs in a research laboratory context and for optical microscopy standards, our methods have broad implications for advanced lithography and patterning. We begin by designing a square array with a lateral extent of 200 µm by 200 µm, a nominal pitch of 2502 nm, and apertures with a nominal diameter of 500 nm. This value of pitch separates aperture centers by an integer number of pixels across our wide patterning field and separates the aperture images beyond the resolution limit for optical microscopy and localization analysis. After fabrication, we trans-illuminate the aperture array, localize each aperture, and register the resulting positions with those of the design through a rigid transformation. This analysis shows total errors with magnitudes exceeding 2 µm, with root-mean-square values of 528.9 nm in the x direction and 1007.7 nm in the y direction (Figure 1a,c-d). A similarity transformation between the experimental and nominal positions distinguishes errors of uniform scale and complex distortion, returning the pitch of the experimental array as 2472.01 nm ± 0.27 nm, which is a scale error of 1.20 %, with additional systematic errors of distortion as large as approximately 1 µm and with root-mean-square values of 399.3 nm in both the x and y directions (Figure 1c-d). We report uncertainties as 68 % coverage intervals. We modify the array design to negate these errors and improve placement accuracy, uniformly increasing the array pitch to account for the 1.20 % scale error and achieve a nominal pitch of 2500 nm. We model the distortion errors by an interpolant that adjusts the design position of each aperture and enables general correction within the extents of our sampling field. We machine and measure a new array and apply a similar analysis, registering the localization data with the new design. We measure a pitch of 2500.03 nm ± 0.27 nm, corresponding to a scale error of 0.001 %, and distortion errors of up to approximately 40 nm and with root-mean-square values of 9.0 nm in the x direction and 9.4 nm in the y direction (Figure 1b,c-d). In this way, we have found our focused ion beam, which had gone several micrometers astray, and returned it to its proper place to within a few tens of nanometers.

SPIE Journal Paper | 28 March 2020

Wear comparison of critical dimension-atomic force microscopy tips

Ndubuisi Orji, Ronald Dixson, Ernesto Lopez, Bernd Irmer

JM3, Vol. 19, Issue 01, 014004, (March 2020) https://doi.org/10.1117/12.10.1117/1.JMM.19.1.014004

KEYWORDS: Silicon, Atomic force microscopy, Microscopy, Calibration, Electron beams, Critical dimension metrology, Transmission electron microscopy, Metrology, Scanning electron microscopy, Standards development

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SPIE Journal Paper | 19 October 2018 Open Access

Tip-on-tip imaging and self-consistent calibration for critical dimension atomic force microscopy: refinements and extension to second lateral axis

Ronald Dixson

JM3, Vol. 17, Issue 04, 044001, (October 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.044001

KEYWORDS: Calibration, Atomic force microscopy, Metrology, Standards development, Critical dimension metrology, Carbon, Silicon, Silicon carbide, Image analysis, Thermal weapon sites

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Proceedings Article | 8 November 2017 Paper

Dimensional measurement sensitivity analysis for a MoSi photomask using DUV reflection scatterfield imaging microscopy

Martin Sohn, Dong Ryoung Lee, Bryan Barnes, Ronald Dixson, Richard Silver, Sang-Soo Choi

Proceedings Volume 10451, 1045112 (2017) https://doi.org/10.1117/12.2280782

KEYWORDS: Photomasks, Microscopy, Illumination engineering, Beam shaping, Microscopes, Optical metrology, Metrology, Light scattering, Polarization, Objectives

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SPIE Journal Paper | 30 June 2017

Tip-on-tip imaging and self-consistent calibration using critical dimension atomic force microscopy

Ronald Dixson

JM3, Vol. 16, Issue 02, 024005, (June 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.2.024005

KEYWORDS: Calibration, Atomic force microscopy, Metrology, Standards development, Critical dimension metrology, Semiconductors, Electron microscopes

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SPIE Journal Paper | 19 June 2017 Open Access

Multiple-instrument evaluation of the consistency and long-term stability of tip width calibration for critical dimension atomic force microscopy

Ronald Dixson, Ndubuisi Orji

JM3, Vol. 16, Issue 02, 024003, (June 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.2.024003

KEYWORDS: Calibration, Standards development, Atomic force microscopy, Atomic force microscope, Metrology, Contamination, Electron microscopes

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SPIE Journal Paper | 15 December 2016

Contour metrology using critical dimension atomic force microscopy

Ndubuisi Orji, Ronald Dixson, Boon Ping Ng, András Vladár, Michael Postek

JM3, Vol. 15, Issue 04, 044006, (December 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.044006

KEYWORDS: Metrology, Scanning electron microscopy, Atomic force microscopy, Error analysis, Calibration, 3D metrology, Image segmentation, Optical proximity correction, Lithography, Composites

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SPIE Journal Paper | 13 October 2016

Transmission electron microscope calibration methods for critical dimension standards

Ndubuisi G. Orji, Ronald Dixson, Domingo Garcia-Gutierrez, Benjamin Bunday, Michael Bishop, Michael Cresswell, Richard Allen, John A. Allgair

JM3, Vol. 15, Issue 04, 044002, (October 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.4.044002

KEYWORDS: Critical dimension metrology, Calibration, Transmission electron microscopy, Electron microscopes, Error analysis, Silicon, Line width roughness, Oxides, Statistical analysis, Standards development

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SPIE Journal Paper | 26 August 2016 Open Access

Evaluation of carbon nanotube probes in critical dimension atomic force microscopes

Jinho Choi, Byong Chon Park, Sang Jung Ahn, Dal-Hyun Kim, Joon Lyou, Ronald Dixson, Ndubuisi Orji, Joseph Fu, Theodore Vorburger

JM3, Vol. 15, Issue 03, 034005, (August 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.3.034005

KEYWORDS: Scanning electron microscopy, Line edge roughness, Carbon nanotubes, Atomic force microscope, Metrology, Atomic force microscopy, Standards development, Silicon, Manufacturing, Ion beams

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SPIE Journal Paper | 9 March 2016

Process optimization for lattice-selective wet etching of crystalline silicon structures

Ronald Dixson, William Guthrie, Richard Allen, Ndubuisi Orji, Michael Cresswell, Christine Murabito

JM3, Vol. 15, Issue 01, 014503, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.014503

KEYWORDS: Etching, Silicon, Calibration, Crystals, Standards development, Scanning electron microscopy, Oxides, Metrology, Wet etching, Photomasks

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SPIE Journal Paper | 25 January 2016

Lateral tip control effects in critical dimension atomic force microscope metrology: the large tip limit

Ronald Dixson, Ndubuisi Orji, Ryan Goldband

JM3, Vol. 15, Issue 01, 014003, (January 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.014003

KEYWORDS: Virtual point source, Atomic force microscope, Calibration, Metrology, Critical dimension metrology, Standards development, Atomic force microscopy, Silicon, Semiconductor manufacturing, Statistical modeling

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Sidewall sensing in critical dimension atomic force microscopes (CD-AFMs) usually involves continuous lateral dithering of the tip or the use of a control algorithm and fast response piezoactuator to position the tip in a manner that resembles touch-triggering of coordinate measuring machine probes. All methods of tip position control, however, induce an effective tip width that may deviate from the actual geometrical tip width. Understanding the influence and dependence of the effective tip width on the dither settings and lateral stiffness of the tip can improve the measurement accuracy and uncertainty estimation for CD-AFM measurements. Since CD-AFM typically uses tips that range from 15 to 850 nm in geometrical width, the behavior of effective tip width throughout this range should be understood. The National Institute of Standards and Technology (NIST) has been investigating the dependence of effective tip width on the dither settings and lateral stiffness of the tip, as well as the possibility of material effects due to sample composition. For tip widths of 130 nm and lower, which also have lower lateral stiffness, the response of the effective tip width to lateral dither is greater than for larger tips. However, we have concluded that these effects will not generally result in a residual bias, provided that the tip calibration and sample measurement are performed under the same conditions. To confirm that our prior conclusions about the dependence of effective tip width on lateral stiffness are valid for large CD tips, we recently performed experiments using a very large non-CD tip with an etched plateau of ∼2-μm width. The effective lateral stiffness of these tips is at least 20 times greater than typical CD-AFM tips, and these results supported our prior conclusions about the expected behavior for larger tips. The bottom-line importance of these latest observations is that we can now reasonably conclude that a dither slope of 3 nm/V is the baseline response due to the induced motion of the cantilever base.

Proceedings Article | 2 November 2015 Paper

Photomask linewidth comparison by PTB and NIST

D. Bergmann, B. Bodermann, H. Bosse, E. Buhr, G. Dai, R. Dixson, W. Häßler-Grohne, K. Hahm, M. Wurm

Proceedings Volume 9636, 96360S (2015) https://doi.org/10.1117/12.2199453

KEYWORDS: Photomasks, Metrology, Critical dimension metrology, Microscopes, Manufacturing, Standards development, Data modeling, Dimensional metrology, Scanning electron microscopy, Line width roughness, Opacity, Calibration, Atomic force microscopy

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Proceedings Article | 21 October 2015 Paper

Lateral tip control effects in CD-AFM metrology: the large tip limit

Ronald Dixson, Ryan Goldband, Ndubuisi Orji

Proceedings Volume 9636, 96360Q (2015) https://doi.org/10.1117/12.2199169

KEYWORDS: Virtual point source, Calibration, Metrology, Standards development, Atomic force microscopy, Silicon, Atomic force microscope, Actuators, Critical dimension metrology, Physics

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Proceedings Article | 8 September 2014 Paper

Technique for AFM tip characterization

Ndubuisi Orji, Hiroshi Itoh, Chunmei Wang, Ronald Dixson

Proceedings Volume 9173, 917305 (2014) https://doi.org/10.1117/12.2062759

KEYWORDS: Atomic force microscopy, Transmission electron microscopy, Calibration, System on a chip, Metrology, Atomic force microscope, Silicon, Photomicroscopy, Semiconductors, Critical dimension metrology

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SPIE Journal Paper | 4 June 2013

Distributed force probe bending model of critical dimension atomic force microscopy bias

Vladimir Ukraintsev, Ndubuisi Orji, Theodore Vorburger, Ronald Dixson, Joseph Fu, Richard Silver

JM3, Vol. 12, Issue 02, 023009, (June 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.023009

KEYWORDS: Atomic force microscopy, Data modeling, 3D modeling, Numerical analysis, Error analysis, Metrology, Statistical modeling, Carbon nanotubes, Solids, Standards development

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Proceedings Article | 11 October 2012 Paper

Multiple-order imaging for optical critical dimension metrology using microscope characterization

Jing Qin, Hui Zhou, Bryan Barnes, Francois Goasmat, Ronald Dixson, Richard Silver

Proceedings Volume 8466, 84660G (2012) https://doi.org/10.1117/12.946120

KEYWORDS: Polarization, Critical dimension metrology, Microscopes, Optical imaging, Illumination engineering, Light scattering, Optical metrology, Microscopy, 3D acquisition, Scattering

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SPIE Journal Paper | 29 May 2012

Robust auto-alignment technique for orientation-dependent etching of nanostructures

Craig McGray, Ndubuisi Orji, Ronald Dixson, Michael Cresswell, Richard Allen, Jon Geist, Richard Kasica

JM3, Vol. 11, Issue 02, 023005, (May 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.2.023005

KEYWORDS: Etching, Crystals, Nanostructures, Photomasks, Silicon, Nanolithography, Lithography, Optical alignment, Atomic force microscopy, Semiconducting wafers

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Proceedings Article | 14 May 2012 Paper

Progress on CD-AFM tip width calibration standards

Ronald Dixson, Boon Ping Ng, Craig McGray, Ndubuisi Orji, Jon Geist

Proceedings Volume 8378, 83780B (2012) https://doi.org/10.1117/12.921597

KEYWORDS: Calibration, Standards development, Etching, Crystals, Line width roughness, Metrology, Silicon, Nanotechnology, Electron beam lithography, Nanolithography

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Proceedings Article | 5 April 2012 Paper

Phase sensitive parametric optical metrology: exploring the limits of three-dimensional optical metrology

Richard Silver, Jing Qin, Bryan Barnes, Hui Zhou, Ronald Dixson, Francois Goasmat

Proceedings Volume 8324, 83240N (2012) https://doi.org/10.1117/12.916988

KEYWORDS: 3D metrology, Optical metrology, Polarization, Light scattering, Statistical analysis, 3D image processing, Data acquisition, Metrology, Atomic force microscopy, Silicon

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Proceedings Article | 3 April 2012 Paper

On CD-AFM bias related to probe bending

V. Ukraintsev, N. Orji, T. Vorburger, R. Dixson, J. Fu, R. Silver

Proceedings Volume 8324, 83240V (2012) https://doi.org/10.1117/12.916737

KEYWORDS: Data modeling, 3D modeling, Numerical analysis, Metrology, Atomic force microscopy, Statistical analysis, Standards development, Semiconductors, 3D metrology, Statistical modeling

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Proceedings Article | 3 April 2012 Paper

Contour metrology using critical dimension atomic force microscopy

Ndubuisi Orji, Ronald Dixson, András Vladár, Bin Ming, Michael Postek

Proceedings Volume 8324, 83240U (2012) https://doi.org/10.1117/12.918056

KEYWORDS: Scanning electron microscopy, Metrology, Atomic force microscopy, Lithography, Data acquisition, Optical proximity correction, Atomic force microscope, Electron microscopes, Scanning helium ion microscopy, 3D metrology

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SPIE Journal Paper | 8 March 2012

Traceable calibration of a critical dimension atomic force microscope

Ronald Dixson, Ndubuisi Orji, Craig McGray, John Bonevich, Jon Geist

JM3, Vol. 11, Issue 1, 011006, (March 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.1.011006

KEYWORDS: Calibration, Atomic force microscopy, Atomic force microscope, Standards development, Transmission electron microscopy, Crystals, Metrology, Semiconductor manufacturing, Dimensional metrology, Nanotechnology

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SPIE Journal Paper | 24 February 2012 Open Access

Dimensional Metrology with Atomic Force Microscopy

Ronald Dixson, Ndubuisi Orji

JM3, Vol. 11, Issue 1, 011001, (February 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.1.011001

KEYWORDS: Atomic force microscopy, Dimensional metrology, Metrology, Microscopy, Analytical research, Biological research, Materials science, Cell biology, Nanostructures, Interferometry

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Proceedings Article | 20 September 2011 Paper

Strategies for nanoscale contour metrology using critical dimension atomic force microscopy

Ndubuisi Orji, Ronald Dixson, András Vládar, Michael Postek

Proceedings Volume 8105, 810505 (2011) https://doi.org/10.1117/12.894416

KEYWORDS: Scanning electron microscopy, Metrology, Lithography, Atomic force microscopy, Resolution enhancement technologies, Feature extraction, Data acquisition, Error analysis, Optical proximity correction, 3D metrology

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Proceedings Article | 1 June 2011 Paper

Traceable calibration of a critical dimension atomic force microscope

Ronald Dixson, Ndubuisi Orji, Craig McGray, Jon Geist

Proceedings Volume 8036, 80360S (2011) https://doi.org/10.1117/12.887290

KEYWORDS: Calibration, Standards development, Atomic force microscopy, Metrology, Atomic force microscope, Semiconductor manufacturing, Dimensional metrology, Nanotechnology, Crystals, Helium neon lasers

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Proceedings Article | 1 June 2011 Paper

Through-focus scanning optical microscopy

Ravikiran Attota, Ronald Dixson, Andras Vladár

Proceedings Volume 8036, 803610 (2011) https://doi.org/10.1117/12.884706

KEYWORDS: Optical microscopes, Silicon, Scanning electron microscopy, Overlay metrology, Optical microscopy, Near field optics, Confocal microscopy, 3D image processing, Optical simulations, Optical aberrations

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Proceedings Article | 23 May 2011 Paper

A Bayesian statistical model for hybrid metrology to improve measurement accuracy

R. Silver, N. Zhang, B. Barnes, J. Qin, H. Zhou, R. Dixson

Proceedings Volume 8083, 808307 (2011) https://doi.org/10.1117/12.889876

KEYWORDS: Atomic force microscopy, Metrology, Statistical analysis, Data modeling, Reflectivity, Optical testing, Model-based design, 3D modeling, Oxides, Scanning electron microscopy

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Proceedings Article | 20 April 2011 Paper

Nested uncertainties and hybrid metrology to improve measurement accuracy

R. Silver, N. F. Zhang, B. Barnes, H. Zhou, J. Qin, R. Dixson

Proceedings Volume 7971, 797116 (2011) https://doi.org/10.1117/12.882411

KEYWORDS: Atomic force microscopy, Metrology, Reflectivity, Data modeling, 3D modeling, Optical testing, Model-based design, Statistical analysis, Oxides, Scatter measurement

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Proceedings Article | 20 April 2011 Paper

TSOM method for semiconductor metrology

Ravikiran Attota, Ronald Dixson, John Kramar, James Potzick, András Vladár, Benjamin Bunday, Erik Novak, Andrew Rudack

Proceedings Volume 7971, 79710T (2011) https://doi.org/10.1117/12.881620

KEYWORDS: Silicon, Overlay metrology, Scanning electron microscopy, Optical microscopes, Metrology, 3D acquisition, 3D metrology, Polarization, 3D modeling, Photomasks

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SPIE Journal Paper | 1 January 2011

Multilaboratory comparison of traceable atomic force microscope measurements of a 70-nm grating pitch standard

Ronald Dixson, Donald Chernoff, Shihua Wang, Theodore Vorburger, Siew-Leng Tan, Ndubuisi Orji, Joseph Fu

JM3, Vol. 10, Issue 1, 013015, (January 2011) https://doi.org/10.1117/12.10.1117/1.3549914

KEYWORDS: Calibration, Metrology, Atomic force microscope, Atomic force microscopy, Standards development, Error analysis, Interferometry, Scanners, Interferometers, Helium neon lasers

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SPIE Journal Paper | 1 January 2011

Measurement traceability and quality assurance in a nanomanufacturing environment

Ndubuisi Orji, Ronald Dixson, Aaron Cordes, Benjamin Bunday, John Allgair

JM3, Vol. 10, Issue 1, 013006, (January 2011) https://doi.org/10.1117/12.10.1117/1.3549736

KEYWORDS: Metrology, Calibration, Environmental sensing, Quality measurement, Manufacturing, Control systems, Data processing, Standards development, Measurement devices, Error analysis

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Proceedings Article | 10 June 2010 Paper

Interlaboratory comparison of traceable atomic force microscope pitch measurements

Ronald Dixson, Donald Chernoff, Shihua Wang, Theodore Vorburger, Siew Leng Tan, Ndubuisi Orji, Joseph Fu

Proceedings Volume 7729, 77290M (2010) https://doi.org/10.1117/12.858353

KEYWORDS: Calibration, Metrology, Atomic force microscopy, Atomic force microscope, Error analysis, Standards development, Interferometers, Scanners, Helium neon lasers, Head

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Proceedings Article | 2 April 2010 Paper

Calibration of 1-nm SiC step height standards

T. Vorburger, A. Hilton, R. Dixson, N. Orji, J. Powell, A. Trunek, P. Neudeck, P. Abel

Proceedings Volume 7638, 76381D (2010) https://doi.org/10.1117/12.849176

KEYWORDS: Calibration, Silicon carbide, Capacitance, Standards development, Atomic force microscopy, Motion measurement, Crystals, Etching, Atomic force microscope, Error analysis

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Proceedings Article | 2 April 2010 Paper

Proximity-associated errors in contour metrology

John Villarrubia, Ronald Dixson, András Vladár

Proceedings Volume 7638, 76380S (2010) https://doi.org/10.1117/12.848406

KEYWORDS: Scanning electron microscopy, Metrology, Scattering, Monte Carlo methods, Atomic force microscopy, Silicon, Critical dimension metrology, Interfaces, Laser scattering, Electron microscopes

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Proceedings Article | 23 September 2009 Paper

Results of an international photomask linewidth comparison of NIST and PTB

B. Bodermann, D. Bergmann, E. Buhr, W. Hässler-Grohne, H. Bosse, J. Potzick, R. Dixson, R. Quintanilha, M. Stocker, A. Vladar, N. Orji

Proceedings Volume 7488, 74881H (2009) https://doi.org/10.1117/12.831373

KEYWORDS: Photomasks, Scanning electron microscopy, Standards development, Metrology, Ultraviolet radiation, Microscopes, Atomic force microscopy, Calibration, Critical dimension metrology, Microscopy

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Proceedings Article | 21 August 2009 Paper

Measurement traceability and quality assurance in a nanomanufacturing environment

N. George Orji, Ronald Dixson, Aaron Cordes, Benjamin Bunday, John Allgair

Proceedings Volume 7405, 740505 (2009) https://doi.org/10.1117/12.826606

KEYWORDS: Metrology, Calibration, Environmental sensing, Quality measurement, Manufacturing, Control systems, Data processing, Measurement devices, Time metrology, Error analysis

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Proceedings Article | 17 June 2009 Paper

Angle-resolved optical metrology using multi-technique nested uncertainties

R. Silver, B. Barnes, H. Zhou, N. Zhang, R. Dixson

Proceedings Volume 7390, 73900P (2009) https://doi.org/10.1117/12.827676

KEYWORDS: Metrology, Atomic force microscopy, Optical testing, Microscopy, Uncertainty analysis, Reflectivity, Scanning electron microscopy, Optical metrology, Overlay metrology, Scatterometry

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Proceedings Article | 23 March 2009 Paper

Reference metrology in a research fab: the NIST clean calibrations thrust

Ronald Dixson, Joe Fu, Ndubuisi Orji, Thomas Renegar, Alan Zheng, Theodore Vorburger, Al Hilton, Marc Cangemi, Lei Chen, Mike Hernandez, Russell Hajdaj, Michael Bishop, Aaron Cordes

Proceedings Volume 7272, 727209 (2009) https://doi.org/10.1117/12.815499

KEYWORDS: Calibration, Metrology, Scanning electron microscopy, Standards development, Atomic force microscopy, Scanners, Nanotechnology, Profiling, Dimensional metrology, Semiconductors

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Proceedings Article | 23 March 2009 Paper

Through-focus scanning and scatterfield optical methods for advanced overlay target analysis

Ravikiran Attota, Michael Stocker, Richard Silver, Alan Heckert, Hui Zhou, Richard Kasica, Lei Chen, Ronald Dixson, George Orji, Bryan Barnes, Peter Lipscomb

Proceedings Volume 7272, 727214 (2009) https://doi.org/10.1117/12.817062

KEYWORDS: Overlay metrology, Silicon, Optical microscopes, Calibration, Scatterometry, Reflectivity, Microscopy, Polarization, Optical aberrations, Optical testing

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Proceedings Article | 19 March 2009 Open Access

Improving optical measurement accuracy using multi-technique nested uncertainties

R. Silver, N. F. Zhang, B. Barnes, H. Zhou, A. Heckert, R. Dixson, T. Germer, B. Bunday

Proceedings Volume 7272, 727202 (2009) https://doi.org/10.1117/12.816569

KEYWORDS: Metrology, Critical dimension metrology, Atomic force microscopy, Scatterometry, Optical testing, Scanning electron microscopy, Uncertainty analysis, Reflectivity, Microscopy, Line edge roughness

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Proceedings Article | 17 October 2008 Paper

Re-calibration of the NIST SRM 2059 master standard using traceable atomic force microscope metrology

Ronald Dixson, James Potzick, Ndubuisi Orji

Proceedings Volume 7122, 71222Q (2008) https://doi.org/10.1117/12.801923

KEYWORDS: Metrology, Calibration, Photomasks, Standards development, Atomic force microscopy, Atomic force microscope, Ultraviolet radiation, Microscopes, Dimensional metrology, Optical testing

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Proceedings Article | 17 October 2008 Paper

International photomask linewidth comparison by NIST and PTB

J. Potzick, R. Dixson, R. Quintanilha, M. Stocker, A. Vladar, E. Buhr, W. Häßler-Grohne, B. Bodermann, C. G. Frase, H. Bosse

Proceedings Volume 7122, 71222P (2008) https://doi.org/10.1117/12.801435

KEYWORDS: Photomasks, Metrology, Scanning electron microscopy, Calibration, Microscopes, Chromium, Ultraviolet radiation, Standards development, Critical dimension metrology, Interferometers

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Proceedings Article | 9 September 2008 Paper

Accuracy considerations for critical dimension semiconductor metrology

N. Orji, R. Dixson, B. Bunday, J. Allgair

Proceedings Volume 7042, 70420A (2008) https://doi.org/10.1117/12.796372

KEYWORDS: Metrology, Calibration, Transmission electron microscopy, Semiconductors, Standards development, Lithography, Atomic force microscope, Line edge roughness, Atomic force microscopy, Carbon nanotubes

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Proceedings Article | 25 March 2008 Paper

Traceable calibration of AFM step height measurements for integrated circuit manufacturing

James Robert, Bill Banke, Ronald Dixson, Carlos Strocchia-Rivera

Proceedings Volume 6922, 69223V (2008) https://doi.org/10.1117/12.778463

KEYWORDS: Calibration, Manufacturing, Scanners, Metrology, Silicon, Atomic force microscopy, Line scan image sensors, Error analysis, Surface roughness, Standards development

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Proceedings Article | 24 March 2008 Paper

Angle resolved optical metrology

R. Silver, B. Barnes, A. Heckert, R. Attota, R. Dixson, J. Jun

Proceedings Volume 6922, 69221M (2008) https://doi.org/10.1117/12.777131

KEYWORDS: Silicon, Atomic force microscopy, Polarization, Critical dimension metrology, Reflectivity, Data modeling, Scatterometry, Error analysis, Dielectric mirrors, Overlay metrology

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Proceedings Article | 22 March 2008 Paper

Toward accurate feature shape metrology

Ndubuisi Orji, Ronald Dixson, Benjamin Bunday, John Allgair

Proceedings Volume 6922, 692208 (2008) https://doi.org/10.1117/12.774426

KEYWORDS: Calibration, Transmission electron microscopy, Metrology, Atomic force microscope, Process control, Atomic force microscopy, Head, Electron microscopes, Binary data, Feature extraction

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SPIE Journal Paper | 1 January 2008

Optical critical dimension measurement of silicon grating targets using back focal plane scatterfield microscopy

Heather Patrick, Ravikiran Attota, Bryan Barnes, Thomas Germer, Ronald Dixson, Michael Stocker, Richard Silver, Michael Bishop

JM3, Vol. 7, Issue 01, 013012, (January 2008) https://doi.org/10.1117/12.10.1117/1.2885275

KEYWORDS: Reflectivity, Diffraction, Silicon, Microscopy, Scanning electron microscopy, Optical testing, Objectives, Atomic force microscopy, Diffraction gratings, Microscopes

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Proceedings Article | 30 October 2007 Paper

Photomask applications of traceable atomic force microscope dimensional metrology at NIST

Ronald Dixson, Ndubuisi Orji, James Potzick, Joseph Fu, Richard Allen, Michael Cresswell, Stewart Smith, Anthony Walton, Andreas Tsiamis

Proceedings Volume 6730, 67303D (2007) https://doi.org/10.1117/12.746755

KEYWORDS: Metrology, Calibration, Atomic force microscopy, Photomasks, Standards development, Phase shifts, Dimensional metrology, Atomic force microscope, Resistance, Microelectronics

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The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. Three major instruments are being used for traceable measurements. The first is a custom in-house metrology AFM, called the calibrated AFM (C-AFM), the second is the first generation of commercially available critical dimension AFM (CD-AFM), and the third is a current generation CD-AFM at SEMATECH - for which NIST has established the calibration and uncertainties. All of these instruments have useful applications in photomask metrology. Linewidth reference metrology is an important application of CD-AFM. We have performed a preliminary comparison of linewidths measured by CD-AFM and by electrical resistance metrology on a binary mask. For the ten selected test structures with on-mask linewidths between 350 nm and 600 nm, most of the observed differences were less than 5 nm, and all of them were less than 10 nm. The offsets were often within the estimated uncertainties of the AFM measurements, without accounting for the effect of linewidth roughness or the uncertainties of electrical measurements. The most recent release of the NIST photomask standard - which is Standard Reference Material (SRM) 2059 - was also supported by CD-AFM reference measurements. We review the recent advances in AFM linewidth metrology that will reduce the uncertainty of AFM measurements on this and future generations of the NIST photomask standard. The NIST C-AFM has displacement metrology for all three axes traceable to the 633 nm wavelength of the iodine-stabilized He-Ne laser. One of the important applications of the C-AFM is step height metrology, which has some relevance to phase shift calibration. In the current generation of the system, the approximate level of relative standard uncertainty for step height measurements at the 100 nm scale is 0.1 %. We discuss the monitor history of a 290 nm step height, originally measured on the C-AFM with a 1.9 nm (k = 2) expanded uncertainty, and describe advances that bring the step height uncertainty of recent measurements to an estimated 0.6 nm (k = 2). Based on this work, we expect to be able to reduce the topographic component of phase uncertainty in alternating aperture phase shift masks (AAPSM) by a factor of three compared to current calibrations based on earlier generation step height references.

Proceedings Article | 5 April 2007 Paper

TEM calibration methods for critical dimension standards

Ndubuisi Orji, Ronald Dixson, Domingo Garcia-Gutierrez, Benjamin Bunday, Michael Bishop, Michael Cresswell, Richard Allen, John Allgair

Proceedings Volume 6518, 651810 (2007) https://doi.org/10.1117/12.713368

KEYWORDS: Transmission electron microscopy, Calibration, Standards development, Crystals, Electron microscopes, Scanning electron microscopy, Metrology, Silicon, Atomic force microscope, Image resolution

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One of the key challenges in critical dimension (CD) metrology is finding suitable calibration standards. Over the last few years there has been some interest in using features measured with the transmission electron microscope (TEM) as primary standards for linewidth measurements. This is because some modes of TEM can produce lattice-resolved images having scale traceability to the SI (Systeme International d'Unites or International System of Units) definition of length through an atomic lattice constant. As interest in using calibration samples that are closer to the length scales being measured increases, so will the use of these TEM techniques. An area where lattice-traceable images produced by TEM has been used as a primary standard is in critical dimension atomic force microscope (CD-AFM) tip width calibration. Two modes of TEM that produce crystal lattice-traceable images are high resolution transmission electron microscope (HR-TEM) and high angle annular dark field scanning transmission electron microscope (HAADF-STEM). HR-TEM produces lattice-traceable images by interference patterns of the diffracted and transmitted beams rather than the actual atomic columns, while HAADF-STEM produces direct images of the crystal lattice. The difference in how both of these techniques work could cause subtle variations in the way feature edges are defined. In this paper, we present results from width samples measured using HR-TEM and HAADF-STEM. Next we compare the results with measurements taken from the same location by two different CD-AFMs. Both of the CD-AFM instruments used for this work have been calibrated using a single crystal critical dimension reference material (SCCDRM). These standards, developed by the National Institute of Standards and Technology (NIST) and SEMATECH, used HR-TEM for traceable tip-width calibration. Consequently, the present work and the previous SCCDRM work provide a mutual cross-check on the traceability of the width calibration. Excellent agreement was observed.

Proceedings Article | 5 April 2007 Paper

Single crystal critical dimension reference materials (SCCDRM): process optimization for the next generation of standards

Ronald Dixson, William Guthrie, Michael Cresswell, Richard Allen, Ndubuisi Orji

Proceedings Volume 6518, 651815 (2007) https://doi.org/10.1117/12.713289

KEYWORDS: Etching, Calibration, Standards development, Scanning electron microscopy, Silicon, Photomasks, Oxides, Metrology, Ultrasonics, Atomic force microscopy

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Proceedings Article | 5 April 2007 Paper

Application of carbon nanotube probes in a critical dimension atomic force microscope

B. Park, J. Choi, S. Ahn, D-H Kim, J. Lyou, R. Dixson, N. Orji, J. Fu, T. Vorburger

Proceedings Volume 6518, 651819 (2007) https://doi.org/10.1117/12.712326

KEYWORDS: Silicon, Carbon nanotubes, Metrology, Atomic force microscopy, Standards development, Scanning electron microscopy, Line edge roughness, Ion beams, Atomic force microscope, Platinum

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Proceedings Article | 5 April 2007 Paper

Comparison and uncertainties of standards for critical dimension atomic force microscope tip width calibration

Ronald Dixson, Ndubuisi Orji

Proceedings Volume 6518, 651816 (2007) https://doi.org/10.1117/12.714032

KEYWORDS: Calibration, Charge-coupled devices, Standards development, Scanning electron microscopy, Metrology, Line width roughness, Transmission electron microscopy, Silicon, Etching, Atomic force microscope

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Proceedings Article | 5 April 2007 Paper

Leveraging LER to minimize linewidth measurement uncertainty in a calibration exercise

James Robert, Bill Banke, Ronald Dixson

Proceedings Volume 6518, 65184T (2007) https://doi.org/10.1117/12.713101

KEYWORDS: Calibration, Line width roughness, Metrology, Line edge roughness, Standards development, Semiconductors, Atomic force microscopy, Crystals, Error analysis, Line scan image sensors

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Proceedings Article | 5 April 2007 Paper

Image simulation and surface reconstruction of undercut features in atomic force microscopy

Xiaoping Qian, John Villarrubia, Fenglei Tian, Ronald Dixson

Proceedings Volume 6518, 651811 (2007) https://doi.org/10.1117/12.712399

KEYWORDS: 3D image reconstruction, Atomic force microscopy, 3D image processing, 3D modeling, 3D metrology, Mathematical morphology, Critical dimension metrology, Reconstruction algorithms, Algorithm development, Device simulation

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SPIE Journal Paper | 1 April 2007

Progress on implementation of a reference measurement system based on a critical-dimension atomic force microscope

Ndubuisi Orji, Ronald Dixson, Angela Martinez, Benjamin Bunday, John Allgair, Theodore Vorburger

JM3, Vol. 6, Issue 02, 023002, (April 2007) https://doi.org/10.1117/12.10.1117/1.2728742

KEYWORDS: Calibration, Standards development, Error analysis, Scanners, Atomic force microscope, Silicon, Semiconductor manufacturing, Semiconductors, Metrology, Semiconducting wafers

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Proceedings Article | 24 March 2006 Paper

Traceable atomic force microscope dimensional metrology at NIST

Ronald Dixson, Ndubuisi Orji, Joseph Fu, Michael Cresswell, Rich Allen, Will Guthrie

Proceedings Volume 6152, 61520P (2006) https://doi.org/10.1117/12.656803

KEYWORDS: Calibration, Metrology, Standards development, Atomic force microscopy, Dimensional metrology, Atomic force microscope, Prototyping, Error analysis, Crystals, Photomasks

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Proceedings Article | 24 March 2006 Paper

The limits of image-based optical metrology

R. Silver, B. Barnes, R. Attota, J. Jun, J. Filliben, J. Soto, M. Stocker, P. Lipscomb, E. Marx, H. Patrick, R. Dixson, R. Larrabee

Proceedings Volume 6152, 61520Z (2006) https://doi.org/10.1117/12.660289

KEYWORDS: Overlay metrology, Silicon, Scanning electron microscopy, Polarization, Metrology, Reflectivity, Illumination engineering, Critical dimension metrology, Indium arsenide, Dysprosium

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Proceedings Article | 24 March 2006 Paper

Optical critical dimension measurement and illumination analysis using the through-focus focus metric

Ravikiran Attota, Richard Silver, Michael Bishop, Ronald Dixson

Proceedings Volume 6152, 61520K (2006) https://doi.org/10.1117/12.656421

KEYWORDS: Microscopes, Cadmium, Critical dimension metrology, Silicon, Optical microscopes, Optical simulations, Scanning electron microscopy, Optical testing, Metrology, Calibration

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Proceedings Article | 24 March 2006 Paper

Progress on implementation of a CD-AFM-based reference measurement system

Ndubuisi Orji, Angela Martinez, Ronald Dixson, John Allgair

Proceedings Volume 6152, 61520O (2006) https://doi.org/10.1117/12.653287

KEYWORDS: Calibration, Error analysis, Standards development, Scanners, Liquid crystal lasers, Semiconductors, Dimensional metrology, Atomic force microscope, Metrology, Silicon

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Proceedings Article | 10 May 2005 Paper

CD-AFM reference metrology at NIST and SEMATECH

Ronald Dixson, Joseph Fu, Ndubuisi Orji, William Guthrie, Richard Allen, Michael Cresswell

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601972

KEYWORDS: Metrology, Calibration, Atomic force microscopy, Standards development, Transmission electron microscopy, Critical dimension metrology, Silicon, Scanning electron microscopy, Semiconductor manufacturing, Crystals

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Proceedings Article | 10 May 2005 Paper

CD reference features with sub-five nanometer uncertainty

M. Cresswell, R. Dixson, W. Guthrie, R. Allen, C. Murabito, B. Park, J. Martinez de Pinillos, A. Hunt

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.606807

KEYWORDS: Atomic force microscopy, Calibration, Critical dimension metrology, Cadmium, Metrology, Semiconducting wafers, Platinum, Silicon, Scanning electron microscopy, Etching

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Proceedings Article | 24 May 2004 Paper

Reference metrology using a next-generation CD-AFM

Ronald Dixson, Angela Guerry

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536898

KEYWORDS: Metrology, Calibration, Standards development, Atomic force microscopy, Transmission electron microscopy, Critical dimension metrology, Semiconducting wafers, Semiconductor manufacturing, Scanning electron microscopy, Error analysis

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Proceedings Article | 24 May 2004 Paper

Determination of optimal parameters for CD-SEM measurement of line-edge roughness

Benjamin Bunday, Michael Bishop, Donald McCormack, John Villarrubia, Andras Vladar, Ronald Dixson, Theodore Vorburger, N. Orji, John Allgair

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535926

KEYWORDS: Line edge roughness, Line scan image sensors, Line width roughness, Edge roughness, Image segmentation, Critical dimension metrology, Metrology, Edge detection, Image quality, Tolerancing

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The measurement of line-edge roughness (LER) has recently become a topic of concern in the litho-metrology community and the semiconductor industry as a whole. The Advanced Metrology Advisory Group (AMAG), a council composed of the chief metrologists from the International SEMATECH (ISMT) consortium’s Member Companies and from the National Institute of Standards and Technology (NIST), has a project to investigate LER metrics and to direct the critical dimension scanning electron microscope (CD-SEM) supplier community towards a semiconductor industry-backed, standardized solution for implementation. The 2003 International Technology Roadmap for Semiconductors (ITRS) has included a new definition for roughness. The ITRS envisions root mean square measurements of edge and width roughness. There are other possible metrics, some of which are surveyed here. The ITRS envisions the root mean square measurements restricted to roughness wavelengths falling within a specified process-relevant range and with measurement repeatability better than a specified tolerance. This study addresses the measurement choices required to meet those specifications. An expression for the length of line that must be measured and the spacing of measurement positions along that length is derived. Noise in the image is shown to produce roughness measurement errors that have both random and nonrandom (i.e., bias) components. Measurements are reported on both UV resist and polycrystalline silicon in special test patterns with roughness typical for those materials. These measurements indicate that the sensitivity of a roughness measurement to noise depends importantly both on the choice of edge detection algorithm and the quality of the focus. Measurements are less sensitive to noise when a model-based or sigmoidal fit algorithm is used and when the images are in good focus. Using the measured roughness characteristics for UV resist lines and applying the ITRS requirements for the 90 nm technology node, the derived expression for sampling length and sampling interval implies that a length at least 8 times the node (i.e., 720 nm) must be measured at intervals of 7.5 nm or less.

Proceedings Article | 2 June 2003 Paper

Electron beam metrology of 193-nm resists at ultralow voltage

Neal Sullivan, Ron Dixson, Benjamin Bunday, Martin Mastovich, Paul Knutrud, Pascal Fabre, Robert Brandom

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.487598

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Atomic force microscopy, Metrology, Electron beams, Data modeling, Contamination, Semiconducting wafers, Systems modeling, Process control

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Proceedings Article | 2 June 2003 Paper

Implementation of reference measurement system using CD-AFM

Ronald Dixson, Angela Guerry, Marylyn Bennett, Theodore Vorburger, Benjamin Bunday

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483667

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Standards development, Calibration, Atomic force microscopy, Metrology, Critical dimension metrology, Error analysis, Semiconductor manufacturing, Line edge roughness

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Proceedings Article | 16 July 2002 Paper

Toward traceability for at-line AFM dimensional metrology

Ronald Dixson, Angela Guerry, Marylyn Bennett, Theodore Vorburger, Michael Postek

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473471

KEYWORDS: Calibration, Semiconducting wafers, Metrology, Standards development, Scanners, Line edge roughness, Error analysis, Motion measurement, Atomic force microscopy, Scanning electron microscopy

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Proceedings Article | 22 August 2001 Paper

Silicon single atom steps as AFM height standards

Ronald Dixson, Ndubuisi Orji, Joseph Fu, Vincent Tsai, Ellen Williams, Raghu Kacker, Theodore Vorburger, Hal Edwards, Debra Cook, Paul West, Ralph Nyffenegger

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436739

KEYWORDS: Silicon, Calibration, Atomic force microscopy, Oxides, Metrology, Statistical analysis, Chemical species, Standards development, Error analysis, Atomic force microscope

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Proceedings Article | 2 June 2000 Paper

Accurate dimensional metrology with atomic force microscopy

Ronald Dixson, Rainer Koening, Joseph Fu, Theodore Vorburger, Brian Renegar

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386492

KEYWORDS: Atomic force microscopy, Calibration, Standards development, Metrology, Interferometers, Sensors, Dimensional metrology, Capacitance, Holography, Prototyping

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Proceedings Article | 30 November 1999 Paper

Step-height metrology for data storage applications

Rainer Koening, Ronald Dixson, Joseph Fu, Brian Renegar, Theodore Vorburger, Vincent Tsai, Michael Postek

Proceedings Volume 3806, (1999) https://doi.org/10.1117/12.371161

KEYWORDS: Calibration, Interferometers, Metrology, Data storage, Compact discs, Atomic force microscopy, Capacitance, Head, Metals, Atomic force microscope

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Proceedings Article | 14 June 1999 Paper

Intercomparison of SEM, AFM, and electrical linewidths

John Villarrubia, Ronald Dixson, Samuel Jones, Jeremiah Lowney, Michael Postek, Richard Allen, Michael Cresswell

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350846

KEYWORDS: Scanning electron microscopy, Atomic force microscopy, Bridges, Image segmentation, Silicon, Resistance, Crystals, Oxides, Metrology, Contamination

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Proceedings Article | 14 June 1999 Paper

Dimensional metrology with the NIST calibrated atomic force microscope

Ronald Dixson, Rainer Koening, Vincent Tsai, Joseph Fu, Theodore Vorburger

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350822

KEYWORDS: Calibration, Atomic force microscopy, Capacitance, Sensors, Edge detection, Metrology, Interferometers, Silicon, Motion measurement, Dimensional metrology

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Proceedings Article | 8 June 1998 Paper

Measurement of pitch and width samples with the NIST calibrated atomic force microscope

Ronald Dixson, Rainer Koening, Theodore Vorburger, Joseph Fu, Vincent Tsai

Proceedings Volume 3332, (1998) https://doi.org/10.1117/12.308751

KEYWORDS: Calibration, Error analysis, Standards development, Metrology, Interferometers, Atomic force microscopy, Atomic force microscope, Resistance, Silicon, Heterodyning

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Because atomic force microscopes (AFMs) are capable of generating three dimensional images with nanometer level resolution, these instruments are being increasingly used in many industries as tools for dimensional metrology at sub- micrometer length scales. To achieve high accuracy, the scales of an AFM must be calibrated. Presently available standards for this purpose are commonly calibrated using stylus instruments and optical techniques. We have developed the calibrated AFM (C-AFM) in order to calibrate pitch and height standards using an AFM. Our instrument has metrology traceable to the wavelength of light for all three axes. This is accomplished through the integration of a flexure x-y translation stage, heterodyne laser interferometers, and a digital-signal-processor based closed-loop feedback system to control the x-y scan motion. The z-axis translation is accomplished using a piezoelectric actuator with an integrated capacitance sensor, which is calibrated using a heterodyne laser interferometer. When fully developed, this instrument will be a calibration tool for pitch and height standards for scanning probe microscopes. We have recently completed a reevaluation of the titling motions of the C-AFM scanner. This has allowed a refinement in our estimate of the Abbe error contribution to our measurement uncertainty. Our most recent pitch measurements are consistent with this new estimate and thus support our refined uncertainty budget. We have recently completed measurements of pitch on several samples, including both grid type and linear scale patterns, for an industrial user. We are also working toward the development of linewidth standards through the comparison of C-AFM width measurements with values obtained from other methods, including an electrical resistance techniques. In this paper, we will describe the current status of the C-AFM, discuss the use of the instrument for measurements of pitch and width, and describe our plans for future measurements.

Proceedings Article | 21 May 1996 Paper

Toward accurate linewidth metrology using atomic force microscopy and tip characterization

Ronald Dixson, Jason Schneir, Thomas McWaid, Neal Sullivan, Vincent Tsai, Saleem Zaidi, Steven Brueck

Proceedings Volume 2725, (1996) https://doi.org/10.1117/12.240131

KEYWORDS: Optical spheres, Particles, Transmission electron microscopy, Silicon, Gold, Photomicroscopy, Atomic force microscopy, Error analysis, Metrology, Atomic force microscope

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Proceedings Article | 21 May 1996 Paper

Measurement of a CD and sidewall angle artifact with two-dimensional CD AFM metrology

Ronald Dixson, Neal Sullivan, Jason Schneir, Thomas McWaid, Vincent Tsai, Jerry Prochazka, Michael Young

Proceedings Volume 2725, (1996) https://doi.org/10.1117/12.240113

KEYWORDS: Transmission electron microscopy, Atomic force microscopy, Metrology, Scanning electron microscopy, Calibration, Photomicroscopy, Critical dimension metrology, Silicon, Scanners, Standards development

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Proceedings Article | 22 May 1995 Paper

Progress on accurate metrology of pitch, height, roughness, and width artifacts using an atomic force microscope

Jason Schneir, Thomas McWaid, Ronald Dixson, Vincent Tsai, John Villarrubia, Ellen Williams, E. Fu

Proceedings Volume 2439, (1995) https://doi.org/10.1117/12.209224

KEYWORDS: Calibration, Metrology, Atomic force microscopy, Surface roughness, Interferometers, Atomic force microscope, Standards development, Polarization, Capacitance, Digital signal processing

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