Dr. Hajime Aoyama Profile

Dr. Hajime Aoyama

at Nikon Corp

SPIE Involvement:

Author

Publications (42)

Proceedings Article | 5 October 2023 Presentation + Paper

Fabrication of superconducting quantum circuits on 12-inch wafers using an ArF immersion lithography system

Satoru Odate, Naooki Saito, Kosuke Suzuki, Hajime Aoyama, Koichi Kusuyama, Yasunobu Nakamura, Hiroyuki Tsukamoto

Proceedings Volume 12652, 1265205 (2023) https://doi.org/10.1117/12.2675964

KEYWORDS: Immersion lithography, Superconductors, Fabrication, Semiconducting wafers, Quantum circuits, Quantum communications, Resonators, Quantum systems, Quantum numbers, Quantum computers

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Proceedings Article | 18 March 2015 Paper

The study of lithography conditions to use advanced resist performance properly

Zhengkai Yang, Wuping Wang, Quan Chen, Hajime Aoyama, Kengo Takemasa, Toshihiko Sei, Tami Miyazawa, Tomoyuki Matsuyama, Chun Shao

Proceedings Volume 9426, 942621 (2015) https://doi.org/10.1117/12.2086062

KEYWORDS: Optical simulations, Critical dimension metrology, Scanners, Lithography, Photomasks, Optical proximity correction, Performance modeling, Photoresist processing, Immersion lithography, Data modeling

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Proceedings Article | 31 March 2014 Paper

Scanner performance predictor and optimizer in further low-k1 lithography

Hajime Aoyama, Toshiharu Nakashima, Taro Ogata, Shintaro Kudo, Naonori Kita, Junji Ikeda, Ryota Matsui, Hajime Yamamoto, Ayako Sukegawa, Katsushi Makino, Masayuki Murayama, Kazuo Masaki, Tomoyuki Matsuyama

Proceedings Volume 9052, 90520A (2014) https://doi.org/10.1117/12.2046547

KEYWORDS: Reticles, Photomasks, Scanners, Critical dimension metrology, Semiconducting wafers, Lithography, Electroluminescence, Error analysis, Distortion, Data modeling

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SPIE Journal Paper | 2 December 2013 Open Access

Impact of realistic source shape and flexibility on source mask optimization

Hirohiko Izumi, Keiichi Tajima, Joachim Siebert, Wolfgang Demmerle, Tomoyuki Matsuyama, Hajime Aoyama, Yasushi Mizuno, Noriyuki Hirayanagi, Naonori Kita, Ryota Matsui

JM3, Vol. 13, Issue 01, 011005, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011005

KEYWORDS: Source mask optimization, Scanners, Fiber optic illuminators, Critical dimension metrology, Photomasks, Optical proximity correction, Semiconducting wafers, SRAF, 3D modeling, Printing

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Proceedings Article | 12 April 2013 Paper

Global source optimization for MEEF and OPE

Ryota Matsui, Tomoya Noda, Hajime Aoyama, Naonori Kita, Tomoyuki Matsuyama, Donis Flagello

Proceedings Volume 8683, 86830O (2013) https://doi.org/10.1117/12.2008267

KEYWORDS: Photomasks, Optimization (mathematics), Image processing, Freeform optics, Semiconducting wafers, Optical proximity correction, Source mask optimization, Cadmium sulfide, Detection and tracking algorithms, Optics manufacturing

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Proceedings Article | 12 April 2013 Paper

Imaging application tools for extremely low-k1 ArF immersion lithography

Shinichi Mori, Hajime Aoyama, Taro Ogata, Ryota Matsui, Tomoyuki Matsuyama

Proceedings Volume 8683, 86830A (2013) https://doi.org/10.1117/12.2011382

KEYWORDS: Scanners, Metrology, Photomasks, Wavefronts, Image processing, Overlay metrology, Distortion, Reticles, Semiconducting wafers, Fiber optic illuminators

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Proceedings Article | 12 April 2013 Paper

Solutions with precise prediction for thermal aberration error in low-k1 immersion lithography

Kazuya Fukuhara, Akiko Mimotogi, Takuya Kono, Hajime Aoyama, Taro Ogata, Naonori Kita, Tomoyuki Matsuyama

Proceedings Volume 8683, 86830U (2013) https://doi.org/10.1117/12.2011691

KEYWORDS: Photomasks, Diffraction, Lithographic illumination, Ions, Neodymium, Semiconductors, Critical dimension metrology, Immersion lithography, Control systems, Lithography

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Proceedings Article | 12 April 2013 Paper

The impact of realistic source shape and flexibility on source mask optimization

Hajime Aoyama, Yasushi Mizuno, Noriyuki Hirayanagi, Naonori Kita, Ryota Matsui, Hirohiko Izumi, Keiichi Tajima, Joachim Siebert, Wolfgang Demmerle, Tomoyuki Matsuyama

Proceedings Volume 8683, 86830M (2013) https://doi.org/10.1117/12.2011353

KEYWORDS: Source mask optimization, Scanners, Optical proximity correction, Electroluminescence, Fiber optic illuminators, Photomasks, Critical dimension metrology, Semiconducting wafers, SRAF, Printing

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Proceedings Article | 8 April 2011 Paper

Manufacturability of 2x-nm devices with EUV tool

Kazuo Tawarayama, Yumi Nakajima, Suigen Kyoh, Hajime Aoyama, Kentaro Matsunaga, Shunko Magoshi, Satoshi Tanaka, Yumi Hayashi, Ichiro Mori

Proceedings Volume 7969, 79691L (2011) https://doi.org/10.1117/12.879333

KEYWORDS: Extreme ultraviolet lithography, Manufacturing, Reactive ion etching, Extreme ultraviolet, Lithography, Lithographic illumination, Semiconducting wafers, Yield improvement, Semiconductors, Photoresist processing

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Proceedings Article | 7 April 2011 Paper

CD correction for half pitch 2x-nm on extreme ultraviolet lithography

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Alan Myers, Yashesh Shroff, Tetsunori Murachi, Gilroy Vandentop, Ichiro Mori

Proceedings Volume 7969, 79691J (2011) https://doi.org/10.1117/12.878672

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Extreme ultraviolet lithography, Logic, Photomasks, Optical proximity correction, Model-based design, Lithography, Point spread functions, Electronic design automation

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SPIE Journal Paper | 1 April 2011

Light-shield border impact on the printability of extreme-ultraviolet mask

Takashi Kamo, Kazuo Tawarayama, Yuusuke Tanaka, Yukiyasu Arisawa, Hajime Aoyama, Toshihiko Tanaka, Osamu Suga

JM3, Vol. 10, Issue 02, 023001, (April 2011) https://doi.org/10.1117/12.10.1117/1.3574117

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Multilayers, Reflectivity, Deep ultraviolet, Lithography, Semiconducting wafers, Reticles, Visible radiation

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SPIE Journal Paper | 1 October 2010

Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Mihoko Kijima, Toshihiko Tanaka, Osamu Suga

JM3, Vol. 9, Issue 04, 041204, (October 2010) https://doi.org/10.1117/12.10.1117/1.3494618

KEYWORDS: Photomasks, Line width roughness, Image processing, Scanning electron microscopy, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Photoresist processing, Semiconducting wafers, Tolerancing

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Proceedings Article | 27 May 2010 Paper

Challenges in flare correction in EUVL lithography for half pitch 22-nm generation

Taiga Uno, Yukiyasu Arisawa, Hajime Aoyama, Toshihiko Tanaka

Proceedings Volume 7748, 774826 (2010) https://doi.org/10.1117/12.867911

KEYWORDS: Model-based design, Optical proximity correction, Critical dimension metrology, Photomasks, Lithography, Extreme ultraviolet lithography, 3D modeling, Semiconducting wafers, Modulation, Data modeling

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Proceedings Article | 27 May 2010 Paper

Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Kazuo Tawarayama, Toshihiko Tanaka, Osamu Suga

Proceedings Volume 7748, 774805 (2010) https://doi.org/10.1117/12.867774

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet lithography, Multilayers, Extreme ultraviolet, Lithography, Semiconducting wafers, Coating, Reticles, Deep ultraviolet

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Proceedings Article | 23 March 2010 Paper

Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Kentaro Matsunaga, Daisuke Kawamura, Toshihiko Tanaka, Hiroyuki Tanaka, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76361N (2010) https://doi.org/10.1117/12.846325

KEYWORDS: Extreme ultraviolet lithography, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Photomasks, Etching, Photoresist processing, Overlay metrology, Lithography, Scanning electron microscopy

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Proceedings Article | 23 March 2010 Paper

Fabrication of 35nm via-hole patterns for interconnect test chips with EUV lithography

Yuusuke Tanaka, Hajime Aoyama, Kazuo Tawarayama, Shunko Magoshi, Daisuke Kawamura, Kentaro Matsunaga, Takashi Kamo, Yukiyasu Arisawa, Taiga Uno, Hiroyuki Tanaka, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76362D (2010) https://doi.org/10.1117/12.846315

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical proximity correction, Metals, Extreme ultraviolet, Semiconducting wafers, Critical dimension metrology, Semiconductors, Anisotropy, Error analysis

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Proceedings Article | 23 March 2010 Paper

Process liability evaluation for beyond 22nm node using EUVL

Kazuo Tawarayama, Hajime Aoyama, Kentaro Matsunaga, Yukiyasu Arisawa, Taiga Uno, Shunko Magoshi, Suigen Kyoh, Yumi Nakajima, Ryoichi Inanami, Satoshi Tanaka, Ayumi Kobiki, Yukiko Kikuchi, Daisuke Kawamura, Kosuke Takai, Koji Murano, Yumi Hayashi, Ichiro Mori

Proceedings Volume 7636, 76361O (2010) https://doi.org/10.1117/12.846265

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Manufacturing, Lithography, Etching, Extreme ultraviolet, Photoresist processing, Reactive ion etching, Silica, Metals

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Proceedings Article | 20 March 2010 Paper

Impact of EUV mask absorber defect with pattern-roughness on lithographic images

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Mihoko Kijima, Toshihiko Tanaka, Osamu Suga

Proceedings Volume 7636, 76360L (2010) https://doi.org/10.1117/12.846347

KEYWORDS: Photomasks, Line width roughness, Scanning electron microscopy, Extreme ultraviolet lithography, Image processing, Lithography, Extreme ultraviolet, Opacity, Semiconducting wafers, Line edge roughness

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Proceedings Article | 20 March 2010 Paper

EUV flare correction for the half-pitch 22nm node

Yukiyasu Arisawa, Hajime Aoyama, Taiga Uno, Toshihiko Tanaka

Proceedings Volume 7636, 763618 (2010) https://doi.org/10.1117/12.846487

KEYWORDS: Optical proximity correction, Model-based design, Point spread functions, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Critical dimension metrology, Semiconducting wafers, Lithography, Space mirrors

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SPIE Journal Paper | 1 October 2009

Recent progress in developing an extreme ultraviolet full-field exposure tool at Selete

Kazuo Tawarayama, Hajime Aoyama, Shunko Magoshi, Yuusuke Tanaka, Seiichiro Shirai, Hiroyuki Tanaka

JM3, Vol. 8, Issue 04, 041510, (October 2009) https://doi.org/10.1117/12.10.1117/1.3275786

KEYWORDS: Semiconducting wafers, Optical alignment, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Photoresist processing, Photomasks, Overlay metrology, Image processing, Semiconductors

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SPIE Journal Paper | 1 October 2009

Process liability evaluation for extreme ultraviolet lithography

Hajime Aoyama, Kazuo Tawarayama, Yuusuke Tanaka, Daisuke Kawamura, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Toshiro Itani, Hiroyuki Tanaka, Yumi Nakajima, Ryoichi Inanami, Kosuke Takai, Koji Murano, Takeshi Koshiba, Kohji Hashimoto, Ichiro Mori

JM3, Vol. 8, Issue 04, 041508, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238542

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Point spread functions, Semiconducting wafers, Lithography, Photoresist processing, Semiconductors, Projection systems, Tungsten

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