Dr. Sung-Woo Lee Profile

Dr. Sung-Woo Lee

R&D Engineer at Synopsys Korea Inc

SPIE Involvement:

Author

Publications (18)

Proceedings Article | 1 October 2013 Paper

Model-driven target optimization to resolve design hotspots through image quality enhancement

Sung-Woo Lee, Jin-Hyuck Jeon, Chan Ha Park, Tom Cecil, Guangming Xiao, Mindy Lee, Jung-Hoe Choi, Seung-Hee Baek, Dave Kim, Kevin Lucas

Proceedings Volume 8880, 88801U (2013) https://doi.org/10.1117/12.2026140

KEYWORDS: Optical proximity correction, Image quality, Optimization (mathematics), Nanoimprint lithography, Image enhancement, Image processing, Design for manufacturing, Resolution enhancement technologies, Neodymium, Nano opto mechanical systems

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Proceedings Article | 12 April 2013 Paper

Mask compensation for process flare in 193nm very low k1 lithography

Kevin Lucas, Robert Boone, Sangjin Oh, Jeonkyu Lee, Taehyeong Lee, Chunsoo Kang, Jungchan Kim, Jaeseung Choi, Chanha Park, Hyunjo Yang, Donggyu Yim, Jung-Hoe Choi, Irene Su, Hua Song, Munhoe Do, Yongfa Fan, Anthony Wang, Sung-Woo Lee

Proceedings Volume 8683, 86830F (2013) https://doi.org/10.1117/12.2012463

KEYWORDS: Optical proximity correction, Lithography, Extreme ultraviolet, Transistors, Critical dimension metrology, Model-based design, 193nm lithography, Cadmium, Photomasks, Optical lithography

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Proceedings Article | 23 March 2011 Paper

Enhancing fullchip ILT mask synthesis capability for IC manufacturability

S. G. Jung, W. J. Sim, S. W. Lee, Chris Ashton, Bob Gleason, Guangming Xiao, David Irby, H. J. Lee, S. S. Suh, M. J. Hong, Xin Zhou, Lan Luan, D. H. Son, Thomas Cecil, David Kim

Proceedings Volume 7973, 79731C (2011) https://doi.org/10.1117/12.882814

KEYWORDS: Photomasks, Lithography, Optical proximity correction, Manufacturing, SRAF, Image segmentation, Inverse problems, Optimization (mathematics), Electronics, Electroluminescence

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Proceedings Article | 29 September 2010 Paper

Improving model prediction accuracy for ILT with aggressive SRAFs

Junghoon Ser, Seoung-woon Choi, Donghwan Son, Sunggon Jung, Lan Luan, Woojoo Sim, Robert Gleason, Sungwoo Lee, Thomas Cecil, David Kim, Moongyu Jeong, Xin Zhou

Proceedings Volume 7823, 782311 (2010) https://doi.org/10.1117/12.864528

KEYWORDS: SRAF, Optical proximity correction, Scanning electron microscopy, Calibration, Diffusion, Photomasks, Lithography, Performance modeling, Cadmium sulfide, Critical dimension metrology

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Proceedings Article | 22 March 2010 Paper

Comparison of OPC models with and without 3D-mask effect

Chan-Hoon Park, Seong-Woon Choi, Tae-Hoon Park, Moon-Gyu Jeong, Eun-Mi Lee, Sung-Woo Lee, Chun-Suk Suh, Joo-Tae Moon, Jung-Hoon Ser

Proceedings Volume 7640, 76401T (2010) https://doi.org/10.1117/12.848317

KEYWORDS: 3D modeling, Optical proximity correction, Photomasks, Cadmium, Semiconducting wafers, Scanning electron microscopy, Semiconductors, Electronics, Scanners, Lithography

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Proceedings Article | 23 September 2009 Paper

Revisit to aberration: a simulation study of lens aberration induced overlay misalignment and its experimental validation

Sanghwa Lee, Sung-Woo Lee, Seong-Woon Choi, Byeongcheol Lee, Kyoungyong Cho, Hoyeon Kim, Chan-Hoon Park

Proceedings Volume 7488, 74883E (2009) https://doi.org/10.1117/12.833345

KEYWORDS: Semiconducting wafers, Overlay metrology, Projection systems, Scanners, Monochromatic aberrations, Lithography, Solids, Aberration correction, Metrology, Optical alignment

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Proceedings Article | 11 May 2009 Paper

Model-based assist feature insertion for sub-40nm memory device

Chan-hoon Park, Seong-woon Choi, Suk-joo Lee, Sung-Woo Lee, Sungsoo Suh

Proceedings Volume 7379, 73792T (2009) https://doi.org/10.1117/12.824343

KEYWORDS: SRAF, Photomasks, Lithography, Optical proximity correction, Instrument modeling, Optical lithography, Manufacturing, Model-based design, Inspection, Optimization (mathematics)

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Proceedings Article | 15 May 2007 Paper

Robust approach to determine the optimized illumination condition using process window analysis

Sooryong Lee, Suk-Joo Lee, Yong-Jin Chun, Sung-Woo Lee, Young-Mi Lee, Brad Falch, Sungsoo Suh, Ho-Jin Park, Han-Ku Cho

Proceedings Volume 6607, 660737 (2007) https://doi.org/10.1117/12.729026

KEYWORDS: Photomasks, Optical proximity correction, Nanoimprint lithography, Fiber optic illuminators, Image enhancement, Design for manufacturing, Critical dimension metrology, Semiconducting wafers, Lithography, Diffraction

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Several criteria are applied to optimize the best illumination and bias condition for a layer. Normalized image log-slope (NILS) and mask error enhancement factor (MEEF) are promising candidates to simply decide the optimized condition. NILS represents imaging capability and MEEF represents the mask uniformity influence on wafer image. MEEF has inversely relationship with NILS, but the optimized point of NILS does not exactly coincide with that of MEEF. Besides NILS and MEEF, the depth of focus (DoF) is an important factor for defining the process margin. The process window (PW) is expressed by DoF and exposure Latitude (EL). PW is general parameter used to determine the best lithographic condition. Large EL can be obtained at the condition with good image performance. In order to include mask uniformity effect in PW analysis, the common PW overlapping the final layout with positive and negative biased layouts is adopted. Starting with the minimum NA, sigma and threshold, OPC is performed to satisfy the target layout using aerial image model, and the final OPCed layout is obtained. The positive and negative biased layouts are generated from the final OPCed layout. The bias limit is determined considering mask uniformity. The common PW obtained by overlapping the final layout with positive and negative biased layouts is calculated. Then, NA, sigma and threshold are increased until the maximum values are reached. The common PW at each NA, sigma and threshold value is obtained using the same flow sequence. Comparing among calculated PWs, the NA, sigma and threshold of the maximum PW can be chosen as the best illuminator and bias condition. In this paper, the optimized illumination and bias condition is determined using PW for 60 nm memory device. The process flow is implemented by an OPC tool. By using the OPC tool for the illuminator optimization, the actual layout and multiple monitoring points can be measured. In spite of a large number of calculations, the fast calculation speed can be obtained by using the distributed process.

Proceedings Article | 26 March 2007 Paper

Fast and accurate 3D mask model for full-chip OPC and verification

Yu Cao, Mu Feng, Sungsoo Suh, Jiong Jiang, Peng Liu, Sukjoo Lee, Guangqing Chen, Hua-yu Liu, Sung-Woo Lee, Luoqi Chen

Proceedings Volume 6520, 65200R (2007) https://doi.org/10.1117/12.712171

KEYWORDS: 3D modeling, Photomasks, Data modeling, Optical proximity correction, Calibration, Binary data, Semiconducting wafers, Performance modeling, Systems modeling, Fourier transforms

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Proceedings Article | 20 October 2006 Paper

OPC to account for thick mask effect using simplified boundary layer model

Hanku Cho, Young-Chang Kim, Sook Lee, Sungsoo Suh, Sooryong Lee, Jootae Moon, Sukjoo Lee, Sungwoo Lee, Sangwook Kim, Jonathan Cobb

Proceedings Volume 6349, 63493I (2006) https://doi.org/10.1117/12.686394

KEYWORDS: Optical proximity correction, Near field, Polarization, 3D modeling, Photomasks, Critical dimension metrology, Chromium, Binary data, Optical lithography, Transmittance

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Proceedings Article | 21 June 2006 Paper

Analysis method to determine and characterize the mask mean-to-target and uniformity specification

Sang-Gyun Woo, Vicky Philipsen, Jeroen Van de Kerkhove, Suk-Joo Lee, Han-Ku Cho, Rik Jonckheere, Sung-Woo Lee, Leonardus Leunissen, Joo-Tae Moon

Proceedings Volume 6281, 62810U (2006) https://doi.org/10.1117/12.692804

KEYWORDS: Photomasks, Critical dimension metrology, Tolerancing, Cadmium, Manufacturing, Semiconducting wafers, Polarization, Logic devices, Fiber optic illuminators, Mask making

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Proceedings Article | 28 May 2004 Paper

Fulfillment of model-based OPC for contact patterns in 60-nm level logic device

Soo-Han Choi, Young-Mi Lee, Sang-Wook Kim, Woo-Sung Han, Han-Ku Cho, Yool Kang, Chang-Min Park, Gi-Sung Yeo, Sung-Woo Lee, Jung-Hyeon Lee

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536268

KEYWORDS: Optical proximity correction, Logic devices, Model-based design, Critical dimension metrology, Instrument modeling, Data modeling, Transistors, Resistance, Materials processing, Optical lithography

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Proceedings Article | 24 May 2004 Paper

Assessments on process parameters' influences to the proximity correction

Gi-Sung Yeo, Woo-Sung Han, Han-Ku Cho, Doo-Youl Lee, Joo-On Park, Soo-Han Choi, Jung-Hyeon Lee, Sung-Woo Lee, Sung-Gon Jung, Eun-Mi Lee

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536341

KEYWORDS: Optical proximity correction, Critical dimension metrology, Atrial fibrillation, Cadmium, Resolution enhancement technologies, Data modeling, Logic devices, Photomasks, Line edge roughness, Scanning electron microscopy

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Proceedings Article | 26 June 2003 Paper

Challenge for effective OCV control in 90-nm logic gate using ArF lithography

Jung-Hyeon Lee, Gi-Sung Yeo, Hyun-Jae Kang, Sung-Woo Lee, Woo-Sung Han, Doo-Youl Lee, Joo-Tae Moon, Han-Ku Cho

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485472

KEYWORDS: Optical proximity correction, Lithography, Logic devices, Photoresist materials, Line edge roughness, Photomasks, Critical dimension metrology, Atrial fibrillation, Logic, Transistors

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Proceedings Article | 27 December 2002 Paper

Comprehensive approach to determining the specification for mask mean to target

Sung-Woo Lee, Woo-Sung Han, Han-Ku Cho, In-Sung Kim, Jung-Hyun Lee

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467479

KEYWORDS: Tolerancing, Critical dimension metrology, Photomasks, Electroluminescence, Cadmium, Diffusion, Convolution, Optical lithography, Semiconducting wafers, Scanners

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Proceedings Article | 11 March 2002 Paper

Analysis of dry etch loading effect in mask fabrication

Sung-Yong Cho, Woo-Sung Han, Sung-Woo Lee, Jung-Min Sohn, Jeong-Yun Lee, Chang-Hwan Kim, Seong-Woon Choi

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458341

KEYWORDS: Etching, Chromium, Critical dimension metrology, Photomasks, Oxygen, Plasma etching, Dry etching, Mask making, Plasma, Optical proximity correction

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Proceedings Article | 14 September 2001 Paper

Doubly exposed patterning using mutually one-pitch step-shifted alternating phase-shift masks

Seong-Woon Choi, Sung-Woo Lee, Jung-Min Sohn, Yong-Hoon Kim, In-Gyun Shin, Woo-Sung Han, Dong-Hoon Chung

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435775

KEYWORDS: Cadmium, Photomasks, Optical lithography, Tolerancing, Lithography, Phase shifts, Resolution enhancement technologies, Phase measurement, Quartz, Etching

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Proceedings Article | 9 April 2001 Paper

Doubly exposed patterning characteristics using two alternating phase-shift masks

Hee-Sun Yoon, Woo-Sung Han, In-Gyun Shin, Jung-Min Sohn, Yonghoon Kim, Seong-Woon Choi, Sung-Woo Lee

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425100

KEYWORDS: Photomasks, Optical lithography, Tolerancing, Lithography, Phase shifts, Cadmium, Resolution enhancement technologies, Critical dimension metrology, Manufacturing, Optical alignment

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Showing 5 of 18 publications

Conference Committee Involvement (4)

Alternative Lithographic Technologies III

1 March 2011 | San Jose, California, United States

Alternative Lithographic Technologies II

23 February 2010 | San Jose, California, United States

Alternative Lithographic Technologies

24 February 2009 | San Jose, California, United States

Emerging Lithographic Technologies XII

26 February 2008 | San Jose, California, United States

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