Mr. Yves Fabien Rody Profile

Yves Fabien Rody

Technical Reticle Expert at NXP Semiconductors

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Author

Publications (27)

Proceedings Article | 16 November 2007 Paper

3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node

Mazen Saied, Franck Foussadier, Jérôme Belledent, Yorick Trouiller, Isabelle Schanen, Emek Yesilada, Christian Gardin, Jean Christophe Urbani, Frank Sundermann, Frédéric Robert, Christophe Couderc, Florent Vautrin, Laurent LeCam, Gurwan Kerrien, Jonathan Planchot, Catherine Martinelli, Bill Wilkinson, Yves Rody, Amandine Borjon, Nicolo Morgana, Jean-Luc Di-Maria, Vincent Farys

Proceedings Volume 6730, 673050 (2007) https://doi.org/10.1117/12.752613

KEYWORDS: Photomasks, Optical proximity correction, 3D modeling, Semiconducting wafers, Diffraction, Scattering, Near field, Lithographic illumination, Systems modeling, Near field optics

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Proceedings Article | 14 May 2007 Paper

Characterization of inverse SRAF for active layer trenches on 45-nm node

Jean-Christophe Urbani, Jean-Damien Chapon, Jérôme Belledent, Amandine Borjon, Christophe Couderc, Jean-Luc Di-Maria, Vincent Farys, Franck Foussadier, Christian Gardin, Gurwan Kerrien, Laurent LeCam, Catherine Martinelli, Patrick Montgomery, Nicolo Morgana, Jonathan Planchot, Frédéric Robert, Yves Rody, Mazen Saied, Frank Sundermann, Yorick Trouiller, Florent Vautrin, Bill Wilkinson, Emek Yesilada

Proceedings Volume 6607, 66071C (2007) https://doi.org/10.1117/12.728960

KEYWORDS: SRAF, Optical proximity correction, Printing, Optical lithography, Silicon, Photomasks, Semiconducting wafers, Inspection, Optical simulations, Lithography

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Proceedings Article | 3 May 2007 Paper

OPC structures for maskshops qualification for the CMOS65nm and CMOS45nm nodes

Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani, Christophe Couderc, Jérôme Belledent, Amandine Borjon, Franck Foussadier, Christian Gardin, Laurent LeCam, Yves Rody, Mazen Saied, Emek Yesilada, Catherine Martinelli, Bill Wilkinson, Florent Vautrin, Nicolo Morgana, Frederic Robert, Patrick Montgomery, Gurwan Kerrien, Jonathan Planchot, Vincent Farys, Jean-Luc Di Maria

Proceedings Volume 6533, 65330E (2007) https://doi.org/10.1117/12.736927

KEYWORDS: Optical proximity correction, Reticles, Metals, Photoresist processing, Semiconducting wafers, Critical dimension metrology, Metrology, Manufacturing, Cadmium, Semiconductors

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Several qualification stages are required for new maskshop tools, first step is done by the maskshop internally. Taking a new writer for example, the maskshop will review the basic factory and site acceptance tests, including CD uniformity, CD linearity, local CD errors and registration errors. The second step is to have dedicated OPC (Optical Proximity Correction) structures from the wafer fab. These dedicated OPC structures will be measured by the maskshop to get a reticle CD metrology trend line. With this trend line, we can: - ensure the stability at reticle level of the maskshop processes - put in place a matching procedure to guarantee the same OPC signature at reticle level in case of any internal maskshop process change or new maskshop evaluation. Changes that require qualification could be process changes for capacity reasons, like introducing a new writer or a new manufacturing line, or for capability reasons, like a new process (new developer tool for example) introduction. Most advanced levels will have dedicated OPC structures. Also dedicated maskshop processes will be monitored with these specific OPC structures. In this paper, we will follow in detail the different reticle CD measurements of dedicated OPC structures for the three advanced logic levels of the 65nm node: poly level, contact level and metal level. The related maskshop's processes are - for poly: eaPSM 193nm with a nega CAR (Chemically Amplified Resist) process for Clear Field L/S (Lines & Space) reticles - for contact: eaPSM 193nm with a posi CAR process for Dark Field Holes reticles - for metal1: eaPSM 193nm with a posi CAR process for Dark Field L/S reticles. For all these structures, CD linearity, CD through pitch, length effects, and pattern density effects will be monitored. To average the metrology errors, the structures are placed twice on the reticle. The first part of this paper will describe the different OPC structures. These OPC structures are close to the DRM (Design Rule Manual) of the dedicated levels to be monitored. The second part of the paper will describe the matching procedure to ensure the same OPC signature at reticle level. We will give an example of an internal maskshop matching exercise, which could be needed when we switched from an already qualified 50 KeV tool to a new 50 KeV tool. The second example is the same matching exercise of our 65nm OPC structures, but with two different maskshops. The last part of the paper will show first results on dedicated OPC structures for the 45nm node.

Proceedings Article | 27 March 2007 Paper

32-nm SOC printing with double patterning, regular design, and 1.2 NA immersion scanner

Yorick Trouiller, Vincent Farys, Amandine Borjon, Jérôme Belledent, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Yves Rody, Christian Gardin, Jonathan Planchot, Will Conley, Pierre-Jerome Goirand, Scott Warrick, Frédéric Robert, Gurwan Kerrien, Florent Vautrin, Bill Wilkinson, Mazen Saied, Emic Yesilada, Patrick Montgomery, Laurent Le Cam, Catherine Martinelli

Proceedings Volume 6520, 65201D (2007) https://doi.org/10.1117/12.714116

KEYWORDS: Optical lithography, Polarization, Transistors, Double patterning technology, Resolution enhancement technologies, Printing, System on a chip, Logic, Scanners, Optical proximity correction

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Proceedings Article | 27 March 2007 Paper

Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window

M. Saied, F. Foussadier, J. Belledent, Y. Trouiller, I. Schanen, C. Gardin, J. C. Urbani, P. K. Montgomery, F. Sundermann, F. Robert, C. Couderc, F. Vautrin, G. Kerrien, J. Planchot, E. Yesilada, C. Martinelli, B. Wilkinson, A. Borjon, L. Le-Cam, J. L. Di-Maria, Y. Rody, N. Morgana, Vincent Farys

Proceedings Volume 6520, 65204Q (2007) https://doi.org/10.1117/12.715120

KEYWORDS: 3D modeling, Photomasks, Optical proximity correction, Polarization, Process modeling, Lithium, Optical lithography, Information technology, Semiconducting wafers, Semiconductors

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Proceedings Article | 26 March 2007 Paper

SRAF placement and sizing using inverse lithography technology

Timothy Lin, Frederic Robert, Amandine Borjon, Gordon Russell, Catherine Martinelli, Andrew Moore, Yves Rody

Proceedings Volume 6520, 65202A (2007) https://doi.org/10.1117/12.712369

KEYWORDS: SRAF, Photomasks, Manufacturing, Image quality, Lithography, Diffractive optical elements, Computer simulations, Lithographic illumination, Printing, Optical lithography

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Proceedings Article | 20 October 2006 Paper

Sensitivity of a variable threshold model toward process and modeling parameters

Mazen Saied, Franck Foussadier, Yorick Trouiller, Jérôme Belledent, Kevin Lucas, Isabelle Schanen, Amandine Borjon, Christophe Couderc, Christian Gardin, Laurent LeCam, Yves Rody, Frank Sundermann, Jean-Christophe Urbani, Emek Yesilada

Proceedings Volume 6349, 634919 (2006) https://doi.org/10.1117/12.686666

KEYWORDS: Calibration, Process modeling, Data modeling, Optical proximity correction, Mathematical modeling, Photoresist processing, Model-based design, Photomasks, Image processing, Image quality

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Proceedings Article | 21 March 2006 Paper

Process window OPC verification: dry versus immersion lithography for the 65nm node

Amandine Borjon, Jerome Belledent, Yorick Trouiller, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Yves Rody, Christian Gardin, Frank Foussadier, Patrick Schiavone

Proceedings Volume 6154, 61544D (2006) https://doi.org/10.1117/12.657056

KEYWORDS: Immersion lithography, Lithography, Calibration, Optical proximity correction, Printing, Optical transfer functions, Data modeling, Process modeling, Convolution, Optical lithography

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Proceedings Article | 5 November 2005 Paper

Through-process window resist modelling strategies for the 65 nm node

Amandine Borjon, Jerôme Belledent, Yorick Trouiller, Kyle Patterson, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yves Rody, Christian Gardin, Franck Foussadier, Patrick Schiavone

Proceedings Volume 5992, 599219 (2005) https://doi.org/10.1117/12.632096

KEYWORDS: Data modeling, Calibration, Statistical modeling, Printing, Critical dimension metrology, Electroluminescence, Convolution, Modeling, Mathematical modeling, Computer simulations

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Proceedings Article | 5 November 2005 Paper

Evaluation of transparent etch stop layer phase shift mask patterning and comparison with the single trench undercut approach

Y. Rody, P. Martin, C. Couderc, P. Sixt, C. Gardin, K. Lucas, K. Patterson, C. Miramond-Collet, J. Belledent, R. Boone, A. Borjon, Y. Trouiller

Proceedings Volume 5992, 59920R (2005) https://doi.org/10.1117/12.632561

KEYWORDS: Etching, Optical lithography, Photomasks, Quartz, Phase shifts, Printing, Electroluminescence, Manufacturing, Chromium, Optical proximity correction

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Despite the complexity of AAPSM patterning using the complementary PSM approach with respect to OPC correction, mask making, fab logistics etc, the technique still remains a valuable solution for special products where a low CD dispersion printing process is required. For current and next generation process technologies (90-65nm ground rules), the most common alternating mask solution of single trench etch with or without undercut becomes more difficult to manufacture. Especially challenging is the aspect ratio control of quartz etched trenches as a function of density in order to assure the correct phase angle and sidewall for dense and isolated structures over all phase shifted geometries. In order to solve this problem, a modified mask architecture is proposed, called the Transparent Etch Stop Layer (TESL) phase shift mask. In TESL, a transparent (etch stop) layer is deposited on the quartz substrate, followed by the deposition of a quartz layer having a thickness corresponding to the required phase angle for the used wavelength. On top a Chromium layer will be deposited. The patterning of this mask will be quite similar to the single trench variant. The difference is, that now an overetch can be applied for the phase definition resulting from the high etch selectivity of quartz to the etch stop material. The result of this approach should be that we can better control the phase depth and sidewall angle for dense and isolated structures. In this paper we will discuss the results of the printing tests performed using TESL masks especially with respect to litho process window, and we will compare these with the single trench undercut approach. Simulation results are presented with respect to shifter sidewall profile and TESL thickness in order to optimize image imbalance. Throughout the study we will correlate simulations and measurements to the after-MBOPC CD values for the shifter structures. These results will allow us to determine if the TESL AAPSM approach can be a more effective alternative to the single trench undercut approach.

Proceedings Article | 28 June 2005 Paper

Dual layer patterning failures in complex RET processes using ORC tools and pre- or post-optical proximity correction strategy

Christophe Couderc, Jerome Belledent, Amandine Borjon, Yorick Trouiller, Frank Sundermann, Kevin Lucas, Jean-Christophe Urbani, Franck Foussadier, Yves Rody, Kyle Patterson, Stanislas Baron

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617412

KEYWORDS: Optical proximity correction, Resolution enhancement technologies, Multilayers, Optical lithography, Photomasks, Optics manufacturing, Semiconducting wafers, Metals, Manufacturing, Lithography

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Proceedings Article | 28 June 2005 Paper

Correction of long-range effects applied to the 65-nm node

Jerome Belledent, James Word, Yorick Trouiller, Christophe Couderc, Corinne Miramond, Olivier Toublan, Jean-Damien Chapon, Stanislas Baron, Amandine Borjon, Franck Foussadier, Christian Gardin, Kevin Lucas, Kyle Patterson, Yves Rody, Frank Sundermann, Jean-Christophe Urbani

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617433

KEYWORDS: Critical dimension metrology, Etching, Photomasks, Convolution, Optical proximity correction, Electrons, Point spread functions, Optical lithography, Scattering, Light scattering

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Proceedings Article | 12 May 2005 Paper

High accuracy 65nm OPC verification: full process window model vs. critical failure ORC

Amandine Borjon, Jerome Belledent, Shumay Shang, Olivier Toublan, Corinne Miramond, Kyle Patterson, Kevin Lucas, Christophe Couderc, Yves Rody, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yorick Trouiller, Patrick Schiavone

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600471

KEYWORDS: Data modeling, Optical proximity correction, Calibration, Printing, Optical lithography, Scanning electron microscopy, Process modeling, 3D modeling, Lithography, Photomasks

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It is becoming more and more difficult to ensure robust patterning after OPC due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high imaging fidelity throughout the entire range of normal process variations. The techniques of Mask Rule Checking (MRC) and Optical Rule Checking (ORC) have become mandatory tools for ensuring that OPC delivers robust patterning. However the first method relies on geometrical checks and the second one is based on a model built at best process conditions. Thus those techniques do not have the ability to address all potential printing errors throughout the process window (PW). To address this issue, a technique known as Critical Failure ORC (CFORC) was introduced that uses optical parameters from aerial image simulations. In CFORC, a numerical model is used to correlate these optical parameters with experimental data taken throughout the process window to predict printing errors. This method has proven its efficiency for detecting potential printing issues through the entire process window [1]. However this analytical method is based on optical parameters extracted via an optical model built at single process conditions. It is reasonable to expect that a verification method involving optical models built from several points throughout PW would provide more accurate predictions of printing errors for complex features. To verify this approach, compact optical models similar to those used for standard OPC were built and calibrated with experimental data measured at the PW limits. This model is then applied to various test patterns to predict potential printing errors. In this paper, a comparison between these two approaches is presented for the poly layer at 65 nm node patterning. Examples of specific failure predictions obtained separately with the two techniques are compared with experimental results. The details of implementing these two techniques on full product layouts are also included in this study.

Proceedings Article | 5 May 2005 Paper

Investigation of model-based physical design restrictions

Kevin Lucas, Stanislas Baron, Jerome Belledent, Robert Boone, Amandine Borjon, Christophe Couderc, Kyle Patterson, Lionel Riviere-Cazaux, Yves Rody, Frank Sundermann, Olivier Toublan, Yorick Trouiller, Jean-Christophe Urbani, Karl Wimmer

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.601105

KEYWORDS: Model-based design, Optical proximity correction, Optical lithography, Data modeling, Lithography, Systems modeling, Semiconductors, Resolution enhancement technologies, Reticles, Semiconducting wafers

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Proceedings Article | 5 May 2005 Paper

Improving model-based OPC performance for the 65-nm node through calibration set optimization

Kyle Patterson, Yorick Trouiller, Kevin Lucas, Jerome Belledent, Amandine Borjon, Yves Rody, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.601166

KEYWORDS: Calibration, Data modeling, Optical proximity correction, Statistical modeling, Performance modeling, Model-based design, Photoresist materials, Printing, Coastal modeling, Optimization (mathematics)

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Proceedings Article | 5 May 2005 Paper

65nm OPC and design optimization by using simple electrical transistor simulation

Yorick Trouiller, Thierry Devoivre, Jerome Belledent, Franck Foussadier, Amandine Borjon, Kyle Patterson, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yves Rody, Jean-Damien Chapon, Franck Arnaud, Jorge Entradas

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.600887

KEYWORDS: Transistors, Ions, Optical proximity correction, Lithography, Optical lithography, Lithium, Logic, Photomasks, Lithographic illumination, Manufacturing

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Proceedings Article | 6 December 2004 Paper

Closing the defect printability loop: optimizing defect specifications for an established lithographic process

Kyle Patterson, Clare Wakefield, Pierre Sixt, Frank Sundermann, Yorick Trouiller, Jerome Belledent, Christophe Couderc, Yves Rody, Kevin Lucas

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569257

KEYWORDS: Semiconducting wafers, Metrology, Reticles, Lithography, Feature extraction, Optical proximity correction, Photomasks, Photoresist processing, Calibration, Array processing

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Proceedings Article | 28 May 2004 Paper

MEV as a new constraint for lithographers in the sub-100-nm regime

Yorick Trouiller, Sergei Postnikov, Kevin Lucas, Frank Sundermann, Kyle Patterson, Jerome Belledent, Christophe Couderc, Yves Rody

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.556617

KEYWORDS: Electroluminescence, Critical dimension metrology, Photomasks, Semiconducting wafers, Lithography, Cadmium, Logic devices, Process control, Sodium, SRAF

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Proceedings Article | 28 May 2004 Paper

Critical failure ORC: application to the 90-nm and 65-nm nodes

Jerome Belledent, Shumay Shang, Yorick Trouiller, Corinne Miramond, Kyle Patterson, Olivier Toublan, Christophe Couderc, Frank Sundermann, Yves Rody

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537190

KEYWORDS: Optical proximity correction, Data modeling, Calibration, Printing, Visualization, Failure analysis, Bridges, Scattering, Image processing, Semiconducting wafers

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SPIE Journal Paper | 1 April 2004

Complementary double-exposure technique (CODE): a way to print 80- and 65-nm gate levels using a double-exposure binary mask approach

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre-Jerome Goirand

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1683359

KEYWORDS: Photomasks, Binary data, Printing, Electroluminescence, Scanners, Resolution enhancement technologies, Visualization, Semiconducting wafers, Manufacturing, Optical proximity correction

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Proceedings Article | 10 July 2003 Paper

Using the CODE technique to print complex two-dimensional structures in a 90-nm ground rule process

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre Jerome Goirand

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485529

KEYWORDS: Photomasks, Printing, Neodymium, Electroluminescence, Binary data, Scanners, Resolution enhancement technologies, Optical proximity correction, Visualization, Manufacturing

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Proceedings Article | 26 June 2003 Paper

Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach

Yorick Trouiller, Jerome Belledent, J. D. Chapon, V. Rousset, Yves Rody, Serdar Manakli, Pierre-Jerome Goirand

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485527

KEYWORDS: Printing, Photomasks, Lithographic illumination, Logic, Critical dimension metrology, Lithography, Optical proximity correction, Binary data, Electroluminescence, Scattering

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Proceedings Article | 27 December 2002 Paper

Complementary double-exposure technique (CODE) solutions to the two-dimensional structures of 90-nm node

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre Jerome Goirand

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468203

KEYWORDS: Photomasks, Resolution enhancement technologies, Binary data, Optical proximity correction, Manufacturing, Scanners, Printing, Cadmium, Integrated circuits, Lithographic illumination

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Proceedings Article | 30 July 2002 Paper

Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Corinne Miramond, Yves Rody, Frank Sundermann, J. D. Chapon, Pierre-Jerome Goirand

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474597

KEYWORDS: Photomasks, Binary data, Electroluminescence, Resolution enhancement technologies, Neodymium, Visualization, Scanners, Critical dimension metrology, Manufacturing, Printing

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Proceedings Article | 30 July 2002 Paper

ArF imaging with off-axis illumination and subresolution assist bars: a compromise between mask constraints and lithographic process constraints

Yorick Trouiller, J. Serrand, Corinne Miramond, Yves Rody, Serdar Manakli, Pierre-Jerome Goirand

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474539

KEYWORDS: Scattering, Photomasks, Critical dimension metrology, Lithography, Electroluminescence, Lithographic illumination, Printing, Scanners, Photoresist processing, Lutetium

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Proceedings Article | 11 March 2002 Paper

Leap ahead in mask data processing for technology nodes below 130 nm

Corinne Miramond, Dominique Goubier, Michael Chomat, Yorick Trouiller, Yves Rody, Olivier Toublan

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458354

KEYWORDS: Optical proximity correction, Model-based design, Photomasks, Data modeling, Data processing, Etching, Data conversion, Metals, Visualization, Manufacturing

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Proceedings Article | 14 September 2001 Paper

ArF lithography for printing 100-nm gates on low-volume ASIC devices: CD budget issues related to various binary mask-making processes

Yorick Trouiller, Gilles Fanget, Corinne Miramond, Yves Rody

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435715

KEYWORDS: Photomasks, Beam shaping, Raster graphics, Etching, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Binary data, Dry etching, Mask making

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The first cost effective solution, to achieve a 100 nm gate with a 300 nm pitch, for ASICS manufacturing, is to validate a 193 nm technology using binary masks and weak OPC. This allows us to have zero defects mask with a relative short cycle time. In order to determine and minimize the CD dispersion resulting from the mask making process for ArF lithography, the following sources of errors have been studied: (1) Mask CD dispersion: the effect of CD dispersion was analyzed for different mask making processes (combinations of raster optical, raster e-beam and shape beam writers and dry and wet etch). Shape beam in combination with dry etch showed the best results in this study. CD dispersion at 1x of 3 nm is observed. (2) MEEF: the MEEF was determined using different methods and found to be 1.6 for a 300 nm pitch at 193 nm and NA equals 0.63/sigma equals 0.8. This value can be further improved when using quadrupole illumination or a higher NA. (3) Linearity and proximity effects on mask: the shape beam process shows better linearity and less proximity effects as compared to a raster tool based process. Without OPC correction, this difference is very important. The choice of the writing tool is less important with respect to proximity and linearity effects when using a model based OPC approach, since the effects are more or less systematic and can be compensated for. (4) Effect of quartz transmission at 193 nm: transmission variation at 193 nm of standard 248 nm quartz blanks is around three times higher than at 248 nm. This leads to a 3 nm CD variation, which is not negligible considering the 20 nm budget. A new type of blank is required. To achieve a 100 nm gate printing capability for low volume ASIC production a good understanding and control of all the steps in the mask process are needed. Furthermore, even if all these steps are well controlled, the total mask CD budget is still larger today than the budget indicated by the ITRS roadmap; 35% versus 30%.

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