Mr. Patrick K. Montgomery Profile

Patrick K. Montgomery

Lithographer at NXP Semiconductors

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 14 May 2007 Paper

Paper

Characterization of inverse SRAF for active layer trenches on 45-nm node

Jean-Christophe Urbani, Jean-Damien Chapon, Jérôme Belledent, Amandine Borjon, Christophe Couderc, Jean-Luc Di-Maria, Vincent Farys, Franck Foussadier, Christian Gardin, Gurwan Kerrien, Laurent LeCam, Catherine Martinelli, Patrick Montgomery, Nicolo Morgana, Jonathan Planchot, Frédéric Robert, Yves Rody, Mazen Saied, Frank Sundermann, Yorick Trouiller, Florent Vautrin, Bill Wilkinson, Emek Yesilada

Proceedings Volume 6607, 66071C (2007) https://doi.org/10.1117/12.728960

KEYWORDS: SRAF, Optical proximity correction, Printing, Optical lithography, Silicon, Photomasks, Semiconducting wafers, Inspection, Optical simulations, Lithography

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Proceedings Article | 3 May 2007 Paper

Paper

OPC structures for maskshops qualification for the CMOS65nm and CMOS45nm nodes

Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani, Christophe Couderc, Jérôme Belledent, Amandine Borjon, Franck Foussadier, Christian Gardin, Laurent LeCam, Yves Rody, Mazen Saied, Emek Yesilada, Catherine Martinelli, Bill Wilkinson, Florent Vautrin, Nicolo Morgana, Frederic Robert, Patrick Montgomery, Gurwan Kerrien, Jonathan Planchot, Vincent Farys, Jean-Luc Di Maria

Proceedings Volume 6533, 65330E (2007) https://doi.org/10.1117/12.736927

KEYWORDS: Optical proximity correction, Reticles, Metals, Photoresist processing, Semiconducting wafers, Critical dimension metrology, Metrology, Manufacturing, Cadmium, Semiconductors

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Several qualification stages are required for new maskshop tools, first step is done by the maskshop internally. Taking a new writer for example, the maskshop will review the basic factory and site acceptance tests, including CD uniformity, CD linearity, local CD errors and registration errors. The second step is to have dedicated OPC (Optical Proximity Correction) structures from the wafer fab. These dedicated OPC structures will be measured by the maskshop to get a reticle CD metrology trend line. With this trend line, we can: - ensure the stability at reticle level of the maskshop processes - put in place a matching procedure to guarantee the same OPC signature at reticle level in case of any internal maskshop process change or new maskshop evaluation. Changes that require qualification could be process changes for capacity reasons, like introducing a new writer or a new manufacturing line, or for capability reasons, like a new process (new developer tool for example) introduction. Most advanced levels will have dedicated OPC structures. Also dedicated maskshop processes will be monitored with these specific OPC structures. In this paper, we will follow in detail the different reticle CD measurements of dedicated OPC structures for the three advanced logic levels of the 65nm node: poly level, contact level and metal level. The related maskshop's processes are - for poly: eaPSM 193nm with a nega CAR (Chemically Amplified Resist) process for Clear Field L/S (Lines & Space) reticles - for contact: eaPSM 193nm with a posi CAR process for Dark Field Holes reticles - for metal1: eaPSM 193nm with a posi CAR process for Dark Field L/S reticles. For all these structures, CD linearity, CD through pitch, length effects, and pattern density effects will be monitored. To average the metrology errors, the structures are placed twice on the reticle. The first part of this paper will describe the different OPC structures. These OPC structures are close to the DRM (Design Rule Manual) of the dedicated levels to be monitored. The second part of the paper will describe the matching procedure to ensure the same OPC signature at reticle level. We will give an example of an internal maskshop matching exercise, which could be needed when we switched from an already qualified 50 KeV tool to a new 50 KeV tool. The second example is the same matching exercise of our 65nm OPC structures, but with two different maskshops. The last part of the paper will show first results on dedicated OPC structures for the 45nm node.

Proceedings Article | 27 March 2007 Paper

Paper

Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window

M. Saied, F. Foussadier, J. Belledent, Y. Trouiller, I. Schanen, C. Gardin, J. C. Urbani, P. K. Montgomery, F. Sundermann, F. Robert, C. Couderc, F. Vautrin, G. Kerrien, J. Planchot, E. Yesilada, C. Martinelli, B. Wilkinson, A. Borjon, L. Le-Cam, J. L. Di-Maria, Y. Rody, N. Morgana, Vincent Farys

Proceedings Volume 6520, 65204Q (2007) https://doi.org/10.1117/12.715120

KEYWORDS: 3D modeling, Photomasks, Optical proximity correction, Polarization, Process modeling, Lithium, Optical lithography, Information technology, Semiconducting wafers, Semiconductors

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Proceedings Article | 27 March 2007 Paper

Paper

32-nm SOC printing with double patterning, regular design, and 1.2 NA immersion scanner

Yorick Trouiller, Vincent Farys, Amandine Borjon, Jérôme Belledent, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Yves Rody, Christian Gardin, Jonathan Planchot, Will Conley, Pierre-Jerome Goirand, Scott Warrick, Frédéric Robert, Gurwan Kerrien, Florent Vautrin, Bill Wilkinson, Mazen Saied, Emic Yesilada, Patrick Montgomery, Laurent Le Cam, Catherine Martinelli

Proceedings Volume 6520, 65201D (2007) https://doi.org/10.1117/12.714116

KEYWORDS: Optical lithography, Polarization, Transistors, Double patterning technology, Resolution enhancement technologies, Printing, System on a chip, Logic, Scanners, Optical proximity correction

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Proceedings Article | 29 March 2006 Paper

Paper

Improved ion implantation masking through photoresist fluorination

Patrick Montgomery, Richard Peters, Cesar Garza, Terry Breeden, Marijean Azrak, Jack Jiang, Kiwoon Kim

Proceedings Volume 6153, 61532Y (2006) https://doi.org/10.1117/12.651047

KEYWORDS: Photoresist materials, Ions, Fluorine, Boron, Ion implantation, Semiconducting wafers, Silicon, Phosphorus, Chemical species, Semiconductors

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Proceedings Article | 29 March 2006 Paper

Paper

Gas-phase fluorination of resist for improving line-end pullback during etch

Richard Peters, Patrick Montgomery, Phillip Stout

Proceedings Volume 6153, 61532X (2006) https://doi.org/10.1117/12.654879

KEYWORDS: Etching, Photoresist materials, Photoresist processing, Optical proximity correction, Fluorine, Optical lithography, Chemistry, Lithography, Semiconducting wafers, 3D modeling

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Line-end pullback has been an issue for photoresist patterning for many years. The two-dimensional nature of line-ends leads to increased deprotection of the resist and shortening of the resist features. From a lithographic standpoint, line-end pullback can be mitigated to some extent using optical proximity correction (OPC). However, as the space between line-ends gets smaller, a trade-off exists with respect to OPC. Over-correction of the line-end on the reticle by the addition of hammerheads can lead to bridging. In some cases, the line-end spacing can actually be less than design rules. The poor aerial image contrast at these line-ends can lead to sloped profiles as well as pullback. The line-end slope depends on the resist contrast, the OPC, and the target line end-to-end space. These sloped line ends lead to increased pullback during the subsequent gate etch process. For gate patterning, a resist trim step is often utilized prior to etching a hardmask and polysilicon. During each etch step the resist line-end is quickly eroded due to the sloped profile. In this paper, we present a novel post-develop processing technique for improving the line-end profile of patterned photoresist. This improvement in the line-end profile results in less pullback during subsequent etch processing. After development, a patterned photoresist film is treated to a gas phase fluorination process. The fluorination process leads to substitution of F for H in the polymer matrix of the resist film, and causes the resist to swell. This swelling causes the line-end profile to become more vertical due to the fact that the base of resist features are anchored to the substrate, and only the top portion of the resist features will swell. This improvement in the line-end profile is shown to reduce line end-to-end spacing by 20-30% after etch. Cross-sectional images show the improvement throughout the partitioned etch process. Simulation results verify that a more vertical line-end slope is sufficient to decrease line-end pullback during etch.

Proceedings Article | 4 May 2005 Paper

Paper

A novel contact hole shrink process for the 65-nm-node and beyond

Richard Peters, Patrick Montgomery, Cesar Garza, Stanley Filipiak, Tab Stephens, Dan Babbitt

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599918

KEYWORDS: Photoresist processing, Cadmium sulfide, Fluorine, Optical lithography, Thermal effects, Scanning electron microscopy, Critical dimension metrology, Semiconducting wafers, Polymers, Semiconductors

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Proceedings Article | 20 August 2004 Paper

Paper

CPL mask technology for sub-100-nm contact hole imaging

Bryan Kasprowicz, Willard Conley, Lloyd Litt, Douglas Van Den Broeke, Patrick Montgomery, Robert Socha, Wei Wu, Kevin Lucas, Bernard Roman, J. Fung Chen, Kurt Wampler, Thomas Laidig, Christopher Progler, Michael Hathorn

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557755

KEYWORDS: Photomasks, Reticles, Manufacturing, Inspection, Lithography, Image processing, Semiconducting wafers, Quartz, Metrology, Optical lithography

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Proceedings Article | 28 May 2004 Paper

Paper

The impact of MEEF through pitch for 120-nm contact holes

Lloyd Litt, Wei Wu, Will Conley, Kevin Lucas, Bernard Roman, Patrick Montgomery, Bryan Kasprowicz, Christopher Progler, Robert Socha, Arjan Verhappen, Kurt Wampler, Erika Schaefer, Pat Cook, Jan-Pieter Kuijten, Wil Pijnenburg

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537437

KEYWORDS: Fiber optic illuminators, Atrial fibrillation, Critical dimension metrology, Resolution enhancement technologies, Photomasks, Semiconducting wafers, Manufacturing, Reticles, Nanoimprint lithography, Binary data

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Proceedings Article | 28 May 2004 Paper

Paper

Defect printability in CPL mask technology

Jan-Pieter Kuijten, Arjan Verhappen, Wil Pijnenburg, Will Conley, Lloyd Litt, Wei Wu, Patrick Montgomery, Bernard Roman, Bryan Kasprowicz, Christopher Progler, Robert Socha, Douglas Van Den Broeke, Erika Schaefer, Pat Cook

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537619

KEYWORDS: Photomasks, Resolution enhancement technologies, Reticles, Manufacturing, Scanning electron microscopy, Semiconductors, Phase shifts, Binary data, Lithography, Semiconducting wafers

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Proceedings Article | 12 May 2004 Paper

Paper

Reduction of line edge roughness and post resist trim pattern collapse for sub 60 nm gate patterns using gas-phase resist fluorination

Patrick Montgomery, Richard Peters, Cesar Garza, Jonathan Cobb, Bill Darlington, Colita Parker, Stan Filipiak, Danny Babbitt

Proceedings Volume 5753, (2004) https://doi.org/10.1117/12.600785

KEYWORDS: Line edge roughness, Etching, Photoresist processing, Edge roughness, Fluorine, Silicon, Lithography, Yield improvement, Transistors, Scanning electron microscopy

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SPIE Journal Paper | 1 April 2004

Comparisons of 9% versus 6% transmission attenuated phase shift mask for the 65 nm device node

Patrick Montgomery, Lloyd Litt, Willard Conley, Kevin Lucas, Johannes van Wingerden, Geert Vandenberghe, Vincent Wiaux

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1669524

KEYWORDS: Photomasks, Printing, Critical dimension metrology, Lithography, Phase shifts, Optical lithography, Metals, Nanoimprint lithography, Semiconducting wafers, Image transmission

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Proceedings Article | 17 December 2003 Paper

Paper

Comparisons of 9% versus 6% transmission attenuated phase-shift mask for the 65-nm device mode

Patrick Montgomery, Kevin Lucas, Lloyd Litt, Will Conley, Eric Fanucchi, Johannes Van Wingerden, Geert Vandenberghe, Vincent Wiaux, Darren Taylor, Michael Cangemi, Bryan Kasprowicz

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518022

KEYWORDS: Photomasks, Inspection, Printing, Reticles, Critical dimension metrology, Optical lithography, Manufacturing, Metals, 193nm lithography, Nanoimprint lithography

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Proceedings Article | 26 June 2003 Paper

Paper

ArF solutions for low-k₁ back-end imaging

Vincent Wiaux, Patrick Montgomery, Geert Vandenberghe, Philippe Monnoyer, Kurt Ronse, Will Conley, Lloyd Litt, Kevin Lucas, Jo Finders, Robert Socha, Douglas Van Den Broeke

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485502

KEYWORDS: Electroluminescence, Printing, Resolution enhancement technologies, Photomasks, Lithography, Reticles, Optical lithography, Phase shifts, Lithographic illumination, Metrology

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The requirements stated in the ITRS roadmap for back-end-of-line imaging of current and future technology nodes are very aggressive. Therefore, it is likely that high NA in combination with enhancement techniques will be necessary for the imaging of contacts and trenches, pushing optical lithography into the low-k₁ regime. In this paper, we focus more specifically on imaging solutions for contact holes beyond the 90 nm node using high NA ArF lithography, as this is currently seen as one of the major challenges in optical lithography. We investigate the performance of various existing enhancement techniques in order to provide contact holes imaging solutions in a k₁ range from 0.35 to 0.45, using the ASML PAS5500/1100 0.75NA ArF scanner installed at IMEC. For various resolution enhancement techniques (RET), the proof of concept has been demonstrated in literature. In this paper, we propose an experimental one-to-one comparison of these RET’s with fixed CD target, exposure tool, lithographic process, and metrology. A single exposure through pitch (dense through isolated) printing solution is preferred and is the largest challenge. The common approach using a 6% attenuated phase-shifted mask (attPSM) with a conventional illumination fails. The advantages and drawbacks of other techniques are discussed. High transmission (17%) attenuated phase shift, potentially beneficial for part of the pitch range, requires conflicting trade-offs when looking for a single exposure through pitch solution. More promising results are obtained combining a BIM or a 6% attPSM with assist slots and off-axis illumination, yielding a depth of focus (DOF) at 8% exposure latitude (EL) greater than 0.31 μm from 200 nm pitch through isolated. Chromeless phase lithography (CPL) is also discussed with promising results obtained at the densest pitch. At a 0.4 k₁, an experimental extrapolation to 0.85NA demonstrates that a pitch of 180 nm can be resolved with 0.4 μm DOF at 8% EL. For all of these imaging solutions, various metrics are studied to compare printing performance. In addition to process latitude, we consider forbidden pitches, sidelobes printability, and mask error enhancement factor (MEEF).

Proceedings Article | 26 June 2003 Paper

Paper

Process, design, and optical proximity correction requirements for the 65nm device generation

Kevin Lucas, Patrick Montgomery, Lloyd Litt, Will Conley, Sergei Postnikov, Wei Wu, Chi-Min Yuan, Marc Olivares, Kirk Strozewski, Russell Carter, James Vasek, David Smith, Eric Fanucchi, Vincent Wiaux, Geert Vandenberghe, Olivier Toublan, Arjan Verhappen, Jan Kuijten, Johannes van Wingerden, Bryan Kasprowicz, Jeffrey Tracy, Christopher Progler, Eugene Shiro, Igor Topouzov, Karl Wimmer, Bernard Roman

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485498

KEYWORDS: Reticles, Optical lithography, Optical proximity correction, Lithography, 193nm lithography, Scanners, Logic, Optical design, Lithographic illumination, SRAF

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Proceedings Article | 26 June 2003 Paper

Paper

Mighty high-T lithography for 65-nm generation contacts

Will Conley, Patrick Montgomery, Kevin Lucas, Lloyd Litt, John Maltabes, Laurent Dieu, Gregory Hughes, David Mellenthin, Robert Socha, Eric Fanucchi, Arjan Verhappen, Kurt Wampler, Linda Yu, Erika Schaefer, Shawn Cassel, Jan Kuijten, Wil Pijnenburg, Vincent Wiaux, Geert Vandenberghe

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485499

KEYWORDS: Photomasks, Lithography, Inspection, Reticles, Optical lithography, Lithographic illumination, Binary data, Manufacturing, 193nm lithography, Semiconducting wafers

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Proceedings Article | 12 June 2003 Paper

Paper

Photoresist reflow for 193-nm low-K1 lithography contacts

Patrick Montgomery, Kevin Lucas, Kirk Strozewski, Lena Zavyalova, Grozdan Grozev, Mario Reybrouck, Plamen Tzviatkov, Mireille Maenhoudt

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485186

KEYWORDS: Lithography, Semiconducting wafers, Etching, Optical lithography, Photoresist processing, Photomasks, Cadmium, Binary data, Polymers, 193nm lithography

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Proceedings Article | 30 July 2002 Paper

Paper

Model-based design improvements for the 100-nm lithography generation

Kevin Lucas, Sergei Postnikov, Kyle Patterson, Chi-Min Yuan, Carla Nelson-Thomas, Matthew Thompson, Russell Carter, Lloyd Litt, Patrick Montgomery, Karl Wimmer

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474563

KEYWORDS: Optical proximity correction, Lithography, Reticles, Model-based design, Semiconducting wafers, Photomasks, 193nm lithography, Optical lithography, Lithographic illumination, Data modeling

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Proceedings Article | 30 July 2002 Paper

Paper

High-NA ArF lithography for 70-nm technologies

Patrick Montgomery, Geert Vandenberghe, Kevin Lucas

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474570

KEYWORDS: Photomasks, Phase shifts, Binary data, Diffraction, Objectives, Electroluminescence, Image processing, Resolution enhancement technologies, Optical lithography, Lithography

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Proceedings Article | 30 July 2002 Paper

Paper

Model-based corrections for complementary phase-shift mask toward 70-nm technology node

Frank Driessen, Geert Vandenberghe, Monique Ercken, Patrick Montgomery, Kurt Ronse, Paul van Adrichem, Jason Li, Hua-Yu Liu, Linard Karklin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.490520

KEYWORDS: Model-based design

Showing 5 of 20 publications

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