Mr. Daisuke Kawamura Profile

Daisuke Kawamura

Chief Specialist at Toshiba Memory Corp

SPIE Involvement:

Author

Publications (23)

SPIE Journal Paper | 9 July 2012

Nanopatterning of diblock copolymer directed self-assembly lithography with wet development

Makoto Muramatsu, Mitsuaki Iwashita, Takahiro Kitano, Takayuki Toshima, Mark Somervell, Yuriko Seino, Daisuke Kawamura, Masahiro Kanno, Katsutoshi Kobayashi, Tsukasa Azuma

JM3, Vol. 11, Issue 3, 031305, (July 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.031305

KEYWORDS: Polymethylmethacrylate, Picosecond phenomena, Ultraviolet radiation, Lithography, Mercury, Nanostructures, Oxygen, Lamps, Scanning electron microscopy, Directed self assembly

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Proceedings Article | 8 April 2011 Paper

Paper

Study of ion implantation into EUV resist for LWR improvement

Yukiko Kikuchi, Daisuke Kawamura, Hiroyuki Mizuno

Proceedings Volume 7969, 79692H (2011) https://doi.org/10.1117/12.879359

KEYWORDS: Line width roughness, Etching, Ion implantation, Extreme ultraviolet, Ions, Photomasks, Extreme ultraviolet lithography, Dry etching, Semiconducting wafers, Photoresist processing

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Proceedings Article | 4 April 2011 Paper

Paper

Nanopatterning of diblock copolymer directed self-assembly lithography with wet development

Makoto Muramatsu, Mitsuaki Iwashita, Takahiro Kitano, Takayuki Toshima, Yuriko Seino, Daisuke Kawamura, Masahiro Kanno, Katsutoshi Kobayashi, Tsukasa Azuma

Proceedings Volume 7970, 79701F (2011) https://doi.org/10.1117/12.878931

KEYWORDS: Picosecond phenomena, Polymethylmethacrylate, Ultraviolet radiation, Lithography, Lamps, Mercury, Scanning electron microscopy, Oxygen, Photography, Directed self assembly

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Proceedings Article | 23 March 2010 Paper

Paper

Fabrication of 35nm via-hole patterns for interconnect test chips with EUV lithography

Yuusuke Tanaka, Hajime Aoyama, Kazuo Tawarayama, Shunko Magoshi, Daisuke Kawamura, Kentaro Matsunaga, Takashi Kamo, Yukiyasu Arisawa, Taiga Uno, Hiroyuki Tanaka, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76362D (2010) https://doi.org/10.1117/12.846315

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical proximity correction, Metals, Extreme ultraviolet, Semiconducting wafers, Critical dimension metrology, Semiconductors, Anisotropy, Error analysis

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Proceedings Article | 23 March 2010 Paper

Paper

Challenges of EUVL resist process toward practical application

Shinichi Ito, Yukiko Kikuchi, Daisuke Kawamura, Eishi Shiobara, Keiichi Tanaka, Hitoshi Kosugi, Junichi Kitano, Takayuki Toshima

Proceedings Volume 7636, 76362V (2010) https://doi.org/10.1117/12.846260

KEYWORDS: Extreme ultraviolet lithography, Photoresist processing, Critical dimension metrology, Semiconducting wafers, Extreme ultraviolet, Surface plasmons, Photomasks, Lithography, Nanoimprint lithography, Line edge roughness

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Proceedings Article | 23 March 2010 Paper

Paper

Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Kentaro Matsunaga, Daisuke Kawamura, Toshihiko Tanaka, Hiroyuki Tanaka, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76361N (2010) https://doi.org/10.1117/12.846325

KEYWORDS: Extreme ultraviolet lithography, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Photomasks, Etching, Photoresist processing, Overlay metrology, Lithography, Scanning electron microscopy

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Proceedings Article | 23 March 2010 Paper

Paper

Process liability evaluation for beyond 22nm node using EUVL

Kazuo Tawarayama, Hajime Aoyama, Kentaro Matsunaga, Yukiyasu Arisawa, Taiga Uno, Shunko Magoshi, Suigen Kyoh, Yumi Nakajima, Ryoichi Inanami, Satoshi Tanaka, Ayumi Kobiki, Yukiko Kikuchi, Daisuke Kawamura, Kosuke Takai, Koji Murano, Yumi Hayashi, Ichiro Mori

Proceedings Volume 7636, 76361O (2010) https://doi.org/10.1117/12.846265

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Manufacturing, Lithography, Etching, Extreme ultraviolet, Photoresist processing, Reactive ion etching, Silica, Metals

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SPIE Journal Paper | 1 October 2009

Process liability evaluation for extreme ultraviolet lithography

Hajime Aoyama, Kazuo Tawarayama, Yuusuke Tanaka, Daisuke Kawamura, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Toshiro Itani, Hiroyuki Tanaka, Yumi Nakajima, Ryoichi Inanami, Kosuke Takai, Koji Murano, Takeshi Koshiba, Kohji Hashimoto, Ichiro Mori

JM3, Vol. 8, Issue 04, 041508, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238542

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Point spread functions, Semiconducting wafers, Lithography, Photoresist processing, Semiconductors, Projection systems, Tungsten

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Proceedings Article | 1 April 2009 Paper

Paper

Development of EUV resists at Selete

Hiroaki Oizumi, Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 7273, 72731M (2009) https://doi.org/10.1117/12.812937

KEYWORDS: Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Optical lithography, Manufacturing, Standards development, Semiconductors, Photoresist processing, Chemically amplified resists, Diffusion

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Proceedings Article | 1 April 2009 Paper

Paper

Effect of resist polymer molecular weight on EUV lithography

Hideaki Tsubaki, Katsuhiro Yamashita, Hidenori Takahashi, Daisuke Kawamura, Toshiro Itani

Proceedings Volume 7273, 72733S (2009) https://doi.org/10.1117/12.812204

KEYWORDS: Polymers, Line width roughness, Diffusion, Extreme ultraviolet lithography, Photomasks, Electroluminescence, Semiconducting wafers, Glasses, Extreme ultraviolet, Image resolution

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Proceedings Article | 1 April 2009 Paper

Paper

Pattern transfer process development for EUVL

Daisuke Kawamura, Yuusuke Tanaka, Toshiro Itani, Eiichi Soda, Noriaki Oda

Proceedings Volume 7273, 72731O (2009) https://doi.org/10.1117/12.812928

KEYWORDS: Etching, Reactive ion etching, Extreme ultraviolet lithography, Silicon, Manufacturing, System on a chip, Photoresist processing, Scanning electron microscopy, Photomasks, Overlay metrology

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Proceedings Article | 18 March 2009 Paper

Paper

Process liability evaluation for EUVL

Hajime Aoyama, Kazuo Tawarayama, Yuusuke Tanaka, Daisuke Kawamura, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Toshiro Itani, Hiroyuki Tanaka, Yumi Nakajima, Ryoichi Inanami, Kosuke Takai, Koji Murano, Takeshi Koshiba, Kohji Hashimoto, Ichiro Mori

Proceedings Volume 7271, 727120 (2009) https://doi.org/10.1117/12.813484

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet lithography, Point spread functions, Semiconducting wafers, Logic, Lithography, Electronic design automation, Projection systems, Mask making

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Proceedings Article | 4 December 2008 Paper

Paper

Current benchmarking results of EUV resist at Selete

Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7140, 714008 (2008) https://doi.org/10.1117/12.804665

KEYWORDS: Line width roughness, Extreme ultraviolet, Convolution, Lithographic illumination, Extreme ultraviolet lithography, Scanning electron microscopy, Polymers, Manufacturing, Electroluminescence, Point spread functions

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Proceedings Article | 15 April 2008 Paper

Paper

LWR reduction in low-k1 ArF-immersion lithography

Kentaro Matsunaga, Tomoya Oori, Hirokazu Kato, Daisuke Kawamura, Eishi Shiobara, Yuichiro Inatomi, Tetsu Kawasaki, Mitsuaki Iwashita, Shinichi Ito

Proceedings Volume 6923, 69231E (2008) https://doi.org/10.1117/12.771922

KEYWORDS: Photoresist processing, Line width roughness, Vacuum ultraviolet, Etching, Photomasks, Immersion lithography, Image processing, Lithography, Natural surfaces, Semiconducting wafers

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Proceedings Article | 4 April 2008 Paper

Paper

EUV resist development in Selete

Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 6923, 692313 (2008) https://doi.org/10.1117/12.771858

KEYWORDS: Line width roughness, Extreme ultraviolet, Electroluminescence, Scanning electron microscopy, Extreme ultraviolet lithography, Solids, 3D modeling, Diffusion, Photomasks, Lithographic illumination

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Proceedings Article | 29 March 2006 Paper

Paper

Pattern defect study using cover material film in immersion lithography

Daisuke Kawamura, Tomoyuki Takeishi, Kentarou Matsunaga, Eishi Shiobara, Yasunobu Oonishi, Shinichi Ito

Proceedings Volume 6153, 61531Q (2006) https://doi.org/10.1117/12.655505

KEYWORDS: Semiconducting wafers, Coating, Immersion lithography, Particles, Inspection, Silicon, Wafer inspection, Wafer testing, Water, Digital watermarking

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Proceedings Article | 4 May 2005 Paper

Paper

Influence of the watermark in immersion lithography process

Daisuke Kawamura, Tomoyuki Takeishi, Koutarou Sho, Kentarou Matsunaga, Naofumi Shibata, Kaoru Ozawa, Satoru Shimura, Hideharu Kyoda, Tetsu Kawasaki, Seiki Ishida, Takayuki Toshima, Yasunobu Oonishi, Shinichi Ito

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599314

KEYWORDS: Scanning electron microscopy, Semiconducting wafers, Digital watermarking, Immersion lithography, Silicon, Photoresist processing, Thin film coatings, Coating, Liquids, Water

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Proceedings Article | 28 May 2004 Paper

Paper

Development of an accurate empirical model for ArF lithography

Shoji Mimotogi, Daisuke Kawamura, Takashi Sato, Soichi Inoue

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536279

KEYWORDS: Lithography, Photomasks, Semiconducting wafers, Error analysis, Critical dimension metrology, Image processing, Mask making, Photoresist processing, Chemical analysis, Process engineering

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Proceedings Article | 28 May 2004 Paper

Paper

Study of the impact of illumination intensity distribution on resist parameter modification

Daisuke Kawamura, Kazuya Sato, Shoji Mimotogi

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535169

KEYWORDS: Finite element methods, Photomasks, Semiconducting wafers, Data modeling, Critical dimension metrology, Scanning electron microscopy, Diffraction, Temperature metrology, Solids, Scanners

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Proceedings Article | 14 May 2004 Paper

Paper

Dependence of ArF resist on exposed area ratio

Eishi Shiobara, Kenji Chiba, Kei Hayasaki, Daisuke Kawamura

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535142

KEYWORDS: Ear, Critical dimension metrology, Semiconducting wafers, Solids, Photoresist processing, Photomasks, Manufacturing, Silicon, Excimer lasers, Statistical modeling

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Proceedings Article | 24 August 2001 Paper

Paper

Dependence of resist profile on exposed area ratio

Eishi Shiobara, Daisuke Kawamura, Kentaro Matsunaga, Yasunobu Onishi

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436896

KEYWORDS: Ear, Semiconducting wafers, Photomasks, Photoresist processing, Lithography, Semiconductors, Image processing, Process control, Critical dimension metrology, Scanning electron microscopy

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Proceedings Article | 23 June 2000 Paper

Paper

Line-edge roughness of chemically amplified resists

Tsukasa Azuma, Kenji Chiba, Maki Imabeppu, Daisuke Kawamura, Yasunobu Onishi

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388310

KEYWORDS: Imaging systems, Line edge roughness, Chemically amplified resists, Scanning electron microscopy, Transparency, Light sources, Bottom antireflective coatings, Binary data, Microelectronics, Sodium

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Proceedings Article | 29 June 1998 Paper

Paper

Resist edge roughness with reducing pattern size

Eishi Shiobara, Daisuke Kawamura, Kentaro Matsunaga, Toru Koike, Shoji Mimotogi, Tsukasa Azuma, Yasunobu Onishi

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312421

KEYWORDS: Edge roughness, Solids, Photography, Excimer lasers, Radium, Laser scanners, 3D scanning, Scanning electron microscopy, Microelectronics, Quenching (fluorescence)

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Showing 5 of 23 publications

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