Dr. Jen-Shiang Wang Profile

Dr. Jen-Shiang Wang

Senior Engineer at ASML

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Author

Publications (13)

Proceedings Article | 28 April 2023 Presentation + Paper

A holistic approach to model-based stochastic-aware computational lithography

ChangAn Wang, Yongfa Fan, Mu Feng, Qian Xie, Jazer Wang, Chris Kaplan, Michael Crouse, Xiaoyang Li, Stephen Hsu, Peigen Cao, Yi-Hsing Peng, Stephen Chang, Jun Ye, Youping Zhang, Bin Cheng, Ken Yang, Leiwu Zheng, Jen-Shiang Wang, Austin Peng, Li-Hao Yeh, Cuiping Zhang, Rafael Howell, Alexander Tan, Yiqiong Zhao, Jun Lang, Xiaolong Zhang

Proceedings Volume 12494, 124940B (2023) https://doi.org/10.1117/12.2658508

KEYWORDS: Stochastic processes, Data modeling, Optical proximity correction, Line width roughness, Source mask optimization, Computational lithography, Semiconducting wafers, Modeling, Performance modeling, Photons

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Proceedings Article | 28 September 2021 Presentation

Contour-based variability decomposition for stochastic band metrology

Thomas Wallow, Jiyou Fu, Jiao Liang, Jen-Shiang Wang, Jimmy Fan, Maxence Delorme, ChangAn Wang, Fahong Li, Vivek Jain, Rui Yuan

Proceedings Volume 11854, 118540E (2021) https://doi.org/10.1117/12.2601587

KEYWORDS: Metrology, Stochastic processes, Photomasks, Model-based design, Scanning electron microscopy, Line edge roughness, Optical lithography, Semiconducting wafers, Extreme ultraviolet, Wafer-level optics

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Proceedings Article | 22 February 2021 Presentation + Paper

Stochastic defect criticality prediction enabled by physical stochastic modeling and massive metrology

ChangAn Wang, Peigen Cao, Maxence Delorme, Jen-Yi Wuu, Jiyou Fu, Fuming Wang, Bob Lin, Yiqiong Zhao, Yi-Hsing Peng, Yongfa Fan, Mu Feng, Bin Cheng, Jen-Shiang Wang, Mark Simmoms, Stefan Hunsche, Oliver Patterson, Kuo-Feng Pao, Abdalmohsen Elmalk, Kevin Gao, Ruochong Fei, Xuefeng Zeng, Xiaolong Zhang

Proceedings Volume 11609, 1160916 (2021) https://doi.org/10.1117/12.2584767

KEYWORDS: Stochastic processes, Pattern recognition, Semiconducting wafers, Wafer inspection, Inspection, Defect detection, Metrology, Failure analysis, Data modeling, Calibration

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Proceedings Article | 22 March 2018 Paper

Massive metrology using fast e-beam technology improves OPC model accuracy by >2x at faster turnaround time

Qian Zhao, Lei Wang, Jazer Wang, ChangAn Wang, Hong-Fei Shi, James Guerrero, Mu Feng, Qiang Zhang, Jiao Liang, Yunbo Guo, Chen Zhang, Tom Wallow, David Rio, Lester Wang, Alvin Wang, Jen-Shiang Wang, Keith Gronlund, Jun Lang, Kar Kit Koh, Dong Qing Zhang, Hongxin Zhang, Subramanian Krishnamurthy, Ray Fei, Chiawen Lin, Wei Fang, Fei Wang

Proceedings Volume 10585, 105852Q (2018) https://doi.org/10.1117/12.2299971

KEYWORDS: Metrology, Data modeling, Calibration, Optical proximity correction, Scanning electron microscopy, Image processing, Time metrology, Critical dimension metrology, Semiconducting wafers, Error analysis

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Classical SEM metrology, CD-SEM, uses low data rate and extensive frame-averaging technique to achieve high-quality SEM imaging for high-precision metrology. The drawbacks include prolonged data collection time and larger photoresist shrinkage due to excess electron dosage. This paper will introduce a novel e-beam metrology system based on a high data rate, large probe current, and ultra-low noise electron optics design. At the same level of metrology precision, this high speed e-beam metrology system could significantly shorten data collection time and reduce electron dosage. In this work, the data collection speed is higher than 7,000 images per hr. Moreover, a novel large field of view (LFOV) capability at high resolution was enabled by an advanced electron deflection system design. The area coverage by LFOV is >100x larger than classical SEM. Superior metrology precision throughout the whole image has been achieved, and high quality metrology data could be extracted from full field. This new capability on metrology will further improve metrology data collection speed to support the need for large volume of metrology data from OPC model calibration of next generation technology. The shrinking EPE (Edge Placement Error) budget places more stringent requirement on OPC model accuracy, which is increasingly limited by metrology errors. In the current practice of metrology data collection and data processing to model calibration flow, CD-SEM throughput becomes a bottleneck that limits the amount of metrology measurements available for OPC model calibration, impacting pattern coverage and model accuracy especially for 2D pattern prediction. To address the trade-off in metrology sampling and model accuracy constrained by the cycle time requirement, this paper employs the high speed e-beam metrology system and a new computational software solution to take full advantage of the large volume data and significantly reduce both systematic and random metrology errors. The new computational software enables users to generate large quantity of highly accurate EP (Edge Placement) gauges and significantly improve design pattern coverage with up to 5X gain in model prediction accuracy on complex 2D patterns. Overall, this work showed >2x improvement in OPC model accuracy at a faster model turn-around time.

Proceedings Article | 24 March 2017 Presentation + Paper

Accurate characterization of 2D etch bias by capturing surrounding effects from resist and trench areas

Yongfa Fan, Leiwu Zheng, Mu Feng, Jinze Wang, Qiao Zhao, Jen-Shiang Wang, Rafael Howell, Keith Gronlund

Proceedings Volume 10147, 101470Z (2017) https://doi.org/10.1117/12.2258702

KEYWORDS: Etching, Optical lithography, Optical proximity correction, Calibration, Reactive ion etching, Plasma, Plasma etching

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The extension of optical lithography to 7 nm node and beyond relies heavily on multiple litho-etch patterning technologies. The etch processes in multiple patterning often require progressively large bias differences between litho and etch as the target features become smaller. Moreover, since this litho-etch bias has strong pattern dependency, it must be taken into consideration during the Optical Proximity Correction (OPC) processes. Traditionally, two approaches are used to compensate etch biases: rule-based retargeting and model-based retargeting. The rule-based approach has a turn-around-time advantage but now has challenges meeting the increasingly tighter critical dimension (CD) requirements using a reasonable etch-bias table, especially for complex 2D patterns. Alternatively, model-based retargeting can meet these CD requirements by capturing the etch process physics with high accuracy, including the etch bias variability that arises from both patterning proximity effects and etch chamber non-uniformity. In the past, empirical terms have been used to approximate the etch bias due to pattern proximity effects but sometimes empirical models are known to have compromised model accuracy so a physical based approach is desired. This paper’s work will address the etch bias variability due to patterning proximity effects by using a physical approach based simplified chemical kinetics. It starts from a well calibrated After-Development-Inspection (ADI) model and the subsequent etch model is based on the ADI model contour. By assuming that plasma chemical species in the trenches are maintained in an equilibrium state, the plasma species act on the edges to induce etch bias. Methods are developed to evaluate plasma collision probability on trench edges for random layouts. Furthermore, the impact of resist materials on etch bias are treated with Arrhenius equation or as a second order reaction. Equations governing plasma collision probabilities on trench edges as a function of time are derived. An etch bias model can be calibrated based on those equations. Experimental results have shown that this physical approach to model etch bias is a promising direction to applications for full-chip etch proximity corrections.

Proceedings Article | 29 September 2010 Paper

Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000

Takashi Kamikubo, Takayuki Ohnishi, Shigehiro Hara, Hirohito Anze, Yoshiaki Hattori, Shuichi Tamamushi, Shufeng Bai, Jen-Shiang Wang, Rafael Howell, George Chen, Jiangwei Li, Jun Tao, Jim Wiley, Terunobu Kurosawa, Yasuko Saito, Tadahiro Takigawa

Proceedings Volume 7823, 782331 (2010) https://doi.org/10.1117/12.865822

KEYWORDS: Extreme ultraviolet, Data modeling, Photomasks, Scattering, Monte Carlo methods, Point spread functions, Process modeling, Electron beams, Tantalum, Chromium

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Proceedings Article | 27 May 2010 Paper

Performance and stability of mask process correction for EBM-7000

Yasuko Saito, George Chen, Jen-Shiang Wang, Shufeng Bai, Rafael Howell, Jiangwei Li, Jun Tao, Doug VanDenBroeke, Jim Wiley, Tadahiro Takigawa, Takayuki Ohnishi, Takashi Kamikubo, Shigehiro Hara, Hirohito Anze, Yoshiaki Hattori, Shuichi Tamamushi

Proceedings Volume 7748, 774814 (2010) https://doi.org/10.1117/12.867969

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet, Manufacturing, Metrology, Time metrology, EUV optics, Computational lithography, Scattering, Optical lithography

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Proceedings Article | 23 September 2009 Paper

Defect printability analysis by lithographic simulation from high resolution mask images

George Chen, James Wiley, Jen-Shiang Wang, Rafael Howell, Shufeng Bai, Yi-Fan Chen, Frank Chen, Yu Cao, Tadahiro Takigawa, Yasuko Saito, Terunobu Kurosawa, Hideo Tsuchiya, Kinya Usuda, Masakazu Tokita, Fumio Ozaki, Nobutaka Kikuiri, Yoshitake Tsuji

Proceedings Volume 7488, 74880A (2009) https://doi.org/10.1117/12.831475

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Lithography, Scanners, Sensors, Image resolution, Optical inspection, Wafer-level optics, Printing

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Proceedings Article | 11 May 2009 Paper

Mask-LMC: lithographic simulation and defect detection from high-resolution mask images

George Chen, James Wiley, Jen-Shiang Wang, Rafael Howell, Shufeng Bai, Yi-Fan Chen, Frank Chen, Yu Cao, Tadahiro Takigawa, Terunobu Kurosawa, Hideo Tsuchiya, Kinya Usuda, Masakazu Tokita, Fumio Ozaki, Nobutaka Kikuiri, Yoshitake Tsuji

Proceedings Volume 7379, 73791B (2009) https://doi.org/10.1117/12.824288

KEYWORDS: Photomasks, Inspection, Lithography, Semiconducting wafers, Scanners, Sensors, Defect detection, Optical inspection, Wafer-level optics, Image resolution

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Proceedings Article | 19 May 2008 Paper

Model-based mask verification on critical 45nm logic masks

F. Sundermann, F. Foussadier, T. Takigawa, J. Wiley, A. Vacca, L. Depre, G. Chen, S. Bai, J.-S. Wang, R. Howell, V. Arnoux, K. Hayano, S. Narukawa, S. Kawashima, H. Mohri, N. Hayashi, H. Miyashita, Y. Trouiller, F. Robert, F. Vautrin, G. Kerrien, J. Planchot, C. Martinelli, J. L. Di-Maria, V. Farys, B. Vandewalle, L. Perraud, J. C. Le Denmat, A. Villaret, C. Gardin, E. Yesilada, M. Saied

Proceedings Volume 7028, 70280U (2008) https://doi.org/10.1117/12.793037

KEYWORDS: Photomasks, Semiconducting wafers, Bridges, Scanning electron microscopy, Critical dimension metrology, Process modeling, Optical proximity correction, Reticles, Model-based design, Logic

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Proceedings Article | 19 May 2008 Paper

Model based short range mask process correction

G. Chen, J.-S. Wang, S. Bai, R. Howell, J. Wiley, A. Vacca, T. Kurosawa, T. Nishibe, T. Takigawa

Proceedings Volume 7028, 70280G (2008) https://doi.org/10.1117/12.793024

KEYWORDS: Photomasks, Process modeling, Optical proximity correction, Calibration, Scanning electron microscopy, Head, Manufacturing, Cadmium, Sensors, Error analysis

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Proceedings Article | 23 March 2006 Paper

High-sensitivity interferometric schemes for ML2 micromirror calibrations

Jen-Shiang Wang, Olav Solgaard, Andrew Neureuther

Proceedings Volume 6151, 615112 (2006) https://doi.org/10.1117/12.656553

KEYWORDS: Calibration, Mirrors, Micromirrors, Interferometry, Signal to noise ratio, Maskless lithography, Point spread functions, Spatial light modulators, Photomasks, Lithography

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Proceedings Article | 6 May 2005 Paper

Design and fabrication of tilting and piston micromirrors for maskless lithography

Yijian Chen, Chi Hui Chu, Yashesh Shroff, Jen-Shiang Wang, William Oldham

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599389

KEYWORDS: Micromirrors, Mirrors, Maskless lithography, Actuators, Extreme ultraviolet, Control systems, Nanolithography, Lithography, Photomasks, Deep ultraviolet

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Showing 5 of 13 publications

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