Dr. Uwe Stamm Profile

Dr. Uwe Stamm

at ASML Netherlands BV

SPIE Involvement:

Author

Publications (50)

Proceedings Article | 27 March 2017 Presentation + Paper

Presentation + Paper

The future of EUV lithography: enabling Moore's Law in the next decade

Alberto Pirati, Jan van Schoot, Kars Troost, Rob van Ballegoij, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Niclas Mika, Jeannot Dredonx, Uwe Stamm, Bernhard Kneer, Bernd Thuering, Winfried Kaiser, Tilmann Heil, Sascha Migura

Proceedings Volume 10143, 101430G (2017) https://doi.org/10.1117/12.2261079

KEYWORDS: Extreme ultraviolet lithography, Scanners, Manufacturing, Lens design, Sensors, Optical proximity correction, Modeling, Photomasks, Semiconducting wafers, Extreme ultraviolet, Reflectivity, EUV optics, Lithography, Projection systems

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Proceedings Article | 18 March 2016 Paper

Paper

EUV lithography performance for manufacturing: status and outlook

Alberto Pirati, Rudy Peeters, Daniel Smith, Sjoerd Lok, Martijn van Noordenburg, Roderik van Es, Eric Verhoeven, Henk Meijer, Arthur Minnaert, Jan-Willem van der Horst, Hans Meiling, Joerg Mallmann, Christian Wagner, Judon Stoeldraijer, Geert Fisser, Jo Finders, Carmen Zoldesi, Uwe Stamm, Herman Boom, David Brandt, Daniel Brown, Igor Fomenkov, Michael Purvis

Proceedings Volume 9776, 97760A (2016) https://doi.org/10.1117/12.2220423

KEYWORDS: Extreme ultraviolet, Overlay metrology, Extreme ultraviolet lithography, Manufacturing, Pellicles, Logic devices, Semiconducting wafers, Reticles, Photomasks, Scanners, Fiber optic illuminators, Tin

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Proceedings Article | 3 May 2007 Paper

Paper

Status report on EUV source development and EUV source applications in EUVL

Vivek Bakshi, Rainer Lebert, Bernhard Jägle, Christian Wies, Uwe Stamm, Juergen Kleinschmidt, Guido Schriever, Christian Ziener, Marc Corthout, Joseph Pankert, Klaus Bergmann, Willi Neff, André Egbert, Deborah Gustafson

Proceedings Volume 6533, 653315 (2007) https://doi.org/10.1117/12.737183

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Xenon, Plasma, Tin, Electrodes, Photomasks, Scanners, Lithography, Mirrors

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Proceedings Article | 15 March 2007 Paper

Paper

EUV source development for high-volume chip manufacturing tools

Uwe Stamm, Masaki Yoshioka, Jürgen Kleinschmidt, Christian Ziener, Guido Schriever, Max Schürmann, Guido Hergenhan, Vladimir Borisov

Proceedings Volume 6517, 65170P (2007) https://doi.org/10.1117/12.712136

KEYWORDS: Extreme ultraviolet, Plasma, Electrodes, Tin, Extreme ultraviolet lithography, Xenon, Prototyping, Manufacturing, Integrated optics, Laser applications

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Proceedings Article | 23 March 2006 Paper

Paper

Development status of EUV sources for use in Beta-tools and high-volume chip manufacturing tools

U. Stamm, J. Kleinschmidt, Denis Bolshukhin, J. Brudermann, G. Hergenhan, V. Korobotchko, B. Nikolaus, M. Schürmann, G. Schriever, C. Ziener, V. Borisov

Proceedings Volume 6151, 61510O (2006) https://doi.org/10.1117/12.652989

KEYWORDS: Extreme ultraviolet, Plasma, Electrodes, Xenon, Tin, Manufacturing, Extreme ultraviolet lithography, High volume manufacturing, Hydrogen, Prototyping

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In the paper we give an update about the development status of gas discharge produced plasma (GDPP) EUV sources at XTREME technologies. Already in 2003 first commercial prototypes of xenon GDPP sources of the type XTS 13-35 based on the Z-pinch with 35 W power in 2π sr have been delivered and integrated into micro-exposure tools from Exitech, UK. The micro-exposure tools with these sources have been installed in industry in 2004. The first tool has made more than 100 million pulses without visible degradation of the source collector optics. For the next generation of full-field exposure tools (we call it Beta-tools) we develop GDPP sources with power of > 10 W in intermediate focus. Also these sources use xenon as fuel which has the advantage of not introducing additional contaminations. Here we describe basic performance of these sources as well as aspects of collector integration and debris mitigation and optics lifetime. To achieve source performance data required for high volume chip manufacturing we consider tin as fuel for the source because of its higher conversion efficiency compared to xenon. While we had earlier reported an output power of 400 W in 2π sr from a tin source we could reach meanwhile 800 W in 2π sr from the source in burst operation. Provided a high power collector is available with a realistic collector module efficiency of between 9% and 15 % these data would support 70-120 W power in intermediate focus. However, we do not expect that the required duty cycle and the required electrode lifetimes can be met with this standing electrode design Z-pinch approach. To overcome lifetime and duty cycle limitations we have investigated GDPP sources with tin fuel and rotating disk electrodes. Currently we can generate more than 200 W in 2π sr with these sources at 4 kHz repetition rate. To achieve 180 W power in intermediate focus which is the recent requirement of some exposure tool manufacturers this type of source needs to operate at 21-28 kHz repetition rate which may be not possible by various reasons. In order to make operation at reasonable repetition rates with sufficient power possible we have investigated various new excitation concepts of the rotating disk electrode configurations. With one of the concepts pulse energies above 170 mJ in 2π sr could be demonstrated. This approach promises to support 180 W intermediate focus power at repetition rates in the range between 7 and 10 kHz. It will be developed to the next power level in the following phase of XTREME technologies' high volume manufacturing source development program.

Proceedings Article | 16 June 2005 Paper

Paper

Progress on EUV-source development, tool integration and applications

Rainer Lebert, Bernhard Jagle, Christian Wies, Uwe Stamm, Juergen Kleinschmidt, Kai Gaebel, Guido Schriever, Joseph Pankert, Klaus Bergmann, Willi Neff, Andre Egbert

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637333

KEYWORDS: Extreme ultraviolet, Plasma, Extreme ultraviolet lithography, Lithography, Metrology, Xenon, Photomasks, Tin, Reflectivity, Magnetism

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Proceedings Article | 6 May 2005 Paper

Paper

Development status of gas discharge produced plasma Z-pinch EUV sources for use in beta-tools and high volume chip manufacturing tools

U. Stamm, J. Kleinschmidt, K. Gabel, G. Hergenhan, C. Ziener, I. Ahmad, D. Bolshukhin, V. Korobotchko, A. Keller, A. Geier, J. Ringling, C. Tran, B. Mader, R. de Bruijn, S. Gotze, J. Brudermann, G. Schriever

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599560

KEYWORDS: Extreme ultraviolet, Plasma, Electrodes, Xenon, Tin, Integrated optics, EUV optics, Visible radiation, Optical filters, Metrology

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Proceedings Article | 6 May 2005 Paper

Paper

EUV sources for EUV lithography in alpha-, beta-, and high volume chip manufacturing: an update on GDPP and LPP technology

U. Stamm, J. Kleinschmidt, K. Gabel, G. Hergenhan, C. Ziener, G. Schriever, I. Ahmad, D. Bolshukhin, J. Brudermann, R. de Bruijn, T. Chin, A. Geier, S. Gotze, A. Keller, V. Korobotchko, B. Mader, J. Ringling, T. Brauner

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599544

KEYWORDS: Extreme ultraviolet, Xenon, Plasma, Tin, Reflectivity, Mirrors, Solids, Integrated optics, Optics manufacturing, High volume manufacturing

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In the paper we report about the progress made at XTREME technologies in the development of EUV sources based on gas discharge produced plasma (GDPP) technologies and laser produced plasma (LPP) technologies. First prototype xenon GDPP sources of the type XTS 13-35 based on the Z-pinch principle with 35 W power in 2π sr have been integrated into micro-exposure tools from Exitech, UK. Specifications of the EUV sources and experience of integration as well as data about component and optics lifetime are presented. In the source development program for Beta exposure tools and high volume manufacturing exposure tools both tin and xenon have been investigated as fuel for the EUV sources. Development progress in porous metal cooling technology as well as pulsed power circuit design has led to GDPP sources with xenon fuel continuous operating with an output power of 200 W in 2π sr at 4500 Hz repetition rate. With tin fuel an output power of 400 W in 2π sr was obtained leaving all other conditions unaltered with respect to the xenon based source. The performance of the xenon fueled sources is sufficiently good to fulfill all requirements up to the beta tool level. For both the xenon and the tin GDPP sources detailed data about source performance are reported, including component lifetime and optics lifetime. The status of the integration of the sources with grazing incidence collector optics is discussed. Theoretical estimations of collection efficiencies are compared with experimental data to determine the loss mechanisms in the beam path. Specifically contamination issues related to tin as target material as well as debris mitigation in tin sources is addressed. As driver lasers for the LPP source research diode-pumped Nd:YAG lasers have been used to generate EUV emitting plasma. As target material xenon has been employed. Conversion efficiencies have been measured and currently the maximum conversion efficiency amounts to 1 %. The laser driver power of 1.2 kW is currently achieved with a masteroscillator power-amplifier industrial Nd:YAG laser configuration. With this laser, xenon based EUV sources have achieved 10 W EUV power at 13.5 nm emitted into 2π sr solid angle. For the xenon LPP sources detailed data about the achieved source performance including component lifetime and optics lifetime are reported. The status of the integration of the sources with normal incidence collector optics is shown. The potentials and limits of Z-pinch GDPP and LPP EUV source technologies to achieve high volume manufacturing specifications are discussed in this paper.

Proceedings Article | 20 September 2004 Paper

Paper

High-power sources for EUV lithography: state of the art

Uwe Stamm, Juergen Kleinschmidt, Kai Gaebel, Henry Birner, Imtiaz Ahmad, Denis Bolshukhin, Jesko Brudermann, Tran Duc Chinh, Frank Flohrer, Sven Goetze, Guido Hergenhan, Diethard Kloepfel, Vladimir Korobochko, Bjoern Mader, Rainer Mueller, Jens Ringling, Guido Schriever, Christian Ziener

Proceedings Volume 5448, (2004) https://doi.org/10.1117/12.548385

KEYWORDS: Extreme ultraviolet, Plasma, Extreme ultraviolet lithography, Tin, Mirrors, Xenon, Solids, Optics manufacturing, High volume manufacturing, Reflectivity

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The availability of extreme ultraviolet (EUV) light sources, measurement tools and integrated test systems is of major importance for the development of EUV lithography for use in high volume chip manufacturing which is expected to start in 2009. The estimates of cost of an EUV exposure tool in combination with sophisticated throughput models leads to a throughput of 120 wafers per hour necessary for economic use of EUV lithography. Concluding from that light sources are necessary which deliver an EUV output power of 115 W at 13.5 nm at the entrance of the illuminator system. The power requirement in combination with the required lifetimes of source components and collector optics make the source technology the most critical issue to be solved when developing EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 500 W average power at up to 10 kHz developed at XTREME technologies. The maximum conversion efficiency from laser power into EUV in-band power is 1.0% into 2π solid angle. 2.0 W EUV radiation is generated at 13.5 nm in 2π sr solid angle. The small source volume of < 0.3 mm diameter will allow large collection angles of 5 sr. The intermediate focus power is estimated to 1 W. Collector mirror lifetime tests showed 5 million pulses lifetime without debris mitigation. With debris mitigation in place lifetimes of more than 1 billion pulses are estimated. For the next generation of higher power EUV LPP sources a laser driver has been tested at 1.3 kW average laser power. This will lead to 5 W EUV power in intermediate focus. The GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. Prototype commercial gas discharge sources with an EUV power of 35W in 2π sr were already delivered for integration into EUV microsteppers. These sources are equipped with a debris-filter which results in an optics lifetime exceeding 100 million discharges at 1 kHz repetition frequency. The same lifetime was achieved for the components of the discharge system itself. The progress in the development of high-power discharge sources resulted in an EUV power of 150 W in continuous operation at 4.5 kHz repetition rate by implementation of porous metal cooling technology. The EUV plasma has a FWHM-diameter of 0.5 mm and a FWHM-length of 1.5 mm. The intermediate focus power is calculated to be in the range of 15 W - 20 W, depending somewhat on the transmission of the optical path to the intermediate focus and on the etendue specification. The typical fluctuations of the EUV energy are standard deviation σ<5% without any active stabilization. Discharge sources with Sn as emitter were investigated as more efficient alternative to Xenon. Estimates regarding Sn sources reveal the potential of achieving 65 W intermediate focus power by using developed porous metal cooling technology. Improvement of cooling could open the path to 115 W of power for high volume manufacturing using EUV lithography. However, Sn-sources are technologically risky und much less advanced than Xe sources, since fuel-handling and debris mitigation is much more challenging in comparison to Xe-sources. GDPP and LPP sources still compete for the technology of high volume manufacturing sources for EUV lithography. Optimization potential of the etendue of the optical system of EUV scanners will certainly influence any technology decision for HVM sources.

Proceedings Article | 20 May 2004 Paper

Paper

EUV source power and lifetime: the most critical issues for EUV lithography

Uwe Stamm, Juergen Kleinschmidt, Kai Gaebel, Henry Birner, Imtiaz Ahmad, Denis Bolshukhin, Jesko Brudermann, Tran Duc Chinh, Frank Flohrer, Sven Goetze, Guido Hergenhan, Diethard Kloepfel, Vladimir Korobotchko, Bjorn Mader, Rainer Mueller, Jens Ringling, Guido Schriever, Christian Ziener

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535410

KEYWORDS: Extreme ultraviolet, Plasma, Extreme ultraviolet lithography, Tin, Mirrors, Xenon, High volume manufacturing, Metals, Reflectivity, EUV optics

Read Abstract +

Semiconductor chip manufacturers are expecting to use extreme ultraviolet (EUV) lithography for high volume manufacturing of DRAMs and ICs starting by the end of this decade. Among all the technologies and modules which have to be developed EUV sources at 13.5 nm are considered to be the most critical issue. Specifically the required output power of 115 W at the entrance of the illuminator system in combination with the required lifetimes of source components and collector optics make the source technology critical for EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 500 W average power at up to 10 kHz developed at XTREME technologies. The maximum conversion efficiency from laser power into EUV in-band power is 1.0 % into 2p solid angle. 2.0 W EUV radiation is generated at 13.5 nm in 2p sr solid angle. The small source volume of < 0.3 mm diameter will allow large collection angles of 5 sr. The intermediate focus power is estimated to 1 W. Collector mirror lifetime tests showed 5 million pulses lifetime without debris mitigation. With debris mitigation in place lifetimes of more than 1 billion pulses are estimated. For the next generation of higher power EUV LPP sources a laser driver has been tested at 1.3 kW average laser power. This will lead to 5 W EUV power in intermediate focus. The GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. Prototype commercial gas discharge sources with an EUV power of 35W in 2p sr were already delivered for integration into EUV microsteppers. These sources are equipped with a debris-filter which results in an optics lifetime exceeding 100 million discharges at 1 kHz repetition frequency. The same lifetime was achieved for the components of the discharge system itself. The progress in the development of high-power discharge sources resulted in an EUV power of 150 W in continuous operation at 4.5 kHz repetition rate by implementation of porous metal cooling technology. The EUV plasma has a FWHM-diameter of 0.5 mm and a FWHM-length of 1.5 mm. The intermediate focus power is calculated to be in the range of 15 W - 20 W, depending somewhat on the transmission of the optical path to the intermediate focus and on the etendue specification. The typical fluctuations of the EUV energy are standard deviation s<5% without any active stabilization. Discharge sources with Sn as emitter were investigated as more efficient alternative to Xenon. Estimates regarding Sn sources reveal the potential of achieving 65 W intermediate focus power by using developed porous metal cooling technology. Improvement of cooling could open the path to 115 W of power for high volume manufacturing using EUV lithography. However, Sn-sources are technologically risky und much less advanced than Xe sources, since fuel-handling and debris mitigation is much more challenging in comparison to Xe-sources. GDPP and LPP sources still compete for the technology of high volume manufacturing sources for EUV lithography. Optimization potential of the etendue of the optical system of EUV scanners will certainly influence any technology decision for HVM sources.

Proceedings Article | 18 November 2003 Paper

Paper

Extreme ultraviolet sources and measurement tools for EUV-lithography and system development

Kai Gaebel, Juergen Kleinschmidt, Guido Schriever, Uwe Stamm, Rainer Lebert, Max Schuermann

Proceedings Volume 5063, (2003) https://doi.org/10.1117/12.541147

KEYWORDS: Extreme ultraviolet, Plasma, Solids, Extreme ultraviolet lithography, Laser development, Lithography, EUV optics, Metrology, Xenon, Calibration

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Proceedings Article | 16 June 2003 Paper

Paper

Compact electron-based extreme-ultraviolet source at 13.5 nm

Andre Egbert, Bjoern Mader, Boris Tkachenko, Andreas Ostendorf, Boris Chichkov, Thomas Missalla, Max Schuermann, Kai Gaebel, Guido Schriever, Uwe Stamm

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482366

KEYWORDS: Extreme ultraviolet, Electrons, Silicon, Solids, Beryllium, Photons, Molybdenum, Metrology, Spectrographs, Titanium

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Proceedings Article | 16 June 2003 Paper

Paper

High-power EUV lithography sources based on gas discharges and laser-produced plasmas

Uwe Stamm, Imtiaz Ahmad, Istvan Balogh, H. Birner, D. Bolshukhin, J. Brudermann, S. Enke, Frank Flohrer, Kai Gäbel, S. Götze, G. Hergenhan, Jürgen Kleinschmidt, Diethard Klöpfel, Vladimir Korobotchko, Jens Ringling, Guido Schriever, C. Tran, C. Ziener

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482676

KEYWORDS: Extreme ultraviolet, Plasmas, Solids, Xenon, Extreme ultraviolet lithography, Optical filters, Gas lasers, EUV optics, Lithography, Reflectivity

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Semiconductor chip manufacturers are expecting to use extreme UV lithography for production in 2009. EUV tools require high power, brilliant light sources at 13.5 nm with collector optics producing 120 W average power at entrance of the illuminator system. Today the power and lifetime of the EUV light source are considered as the most critical issue for EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 400 W average power at 10 kHz developed at XTREME technologies. The maximum conversion efficiency form laser power into EUV in-band power is 0.75% into 2π solid angle. With 300 W laser average power at 3300 Hz repetition rate up to 1.5 W EUV radiation is generated at 13.5 nm. After a collector of 5 sr this corresponds to 0.6 W in intermediate focus without spectral purity filter and 0.5 W in intermediate focus with spectral purity filter. The direct generation of the EUV emitting plasma from electrical discharges is much simpler than LPP because the electrical energy has not to be converted into laser radiation before plasma excitation. XTREME technologies' Xenon GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. The plasma pinch size and the available emission angle have been matched to the etendue of the optical system of 2-3 mm2 sr, i.e. no additional etendue related loss reduces the usable EUV power from the source. In continuous operation at 1000 Hz the GDPP sources emit 50W into 2π solid angle are obtained from the Z-pinch sources. Spatial and temporal emission stability of the EUV sources is in the range of a few percent. Debris shields for EUV sources have been developed which give improvement of the collector optics lifetime by several orders of magnitude.

SPIE Journal Paper | 1 April 2003

Compact electron-based extreme ultraviolet source at 13.5 nm

Andre Egbert, Bjoern Mader, Boris Tkachenko, Andreas Ostendorf, Carsten Fallnich, Boris Chichkov, Thomas Miflalla, Max Schuermann, Kai Gaebel, Guido Schriever, Uwe Stamm

JM3, Vol. 2, Issue 02, (April 2003) https://doi.org/10.1117/12.10.1117/1.1532350

KEYWORDS: Extreme ultraviolet, Electrons, Silicon, Solids, Beryllium, Photons, Metrology, X-rays, X-ray technology, Extreme ultraviolet lithography

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Proceedings Article | 1 July 2002 Paper

Paper

Development of high-power EUV sources for lithography

Vladimir Borisov, Imtiaz Ahmad, S. Goetze, Alexander Ivanov, Oleg Khristoforov, Juergen Kleinschmidt, Vladimir Korobotchko, Jens Ringling, Guido Schriever, Uwe Stamm, Aleksandr Vinokhodov

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472338

KEYWORDS: Extreme ultraviolet, Plasma, Lithography, Spectrographs, Mirrors, Calibration, Metrology, Coded apertures, Visible radiation, Spectral resolution

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Proceedings Article | 1 July 2002 Paper

Paper

High-power EUV sources for lithography: a comparison of laser-produced plasma and gas-discharge-produced plasma

Uwe Stamm, Imtiaz Ahmad, Vladimir Borisov, Frank Flohrer, Kai Gaebel, S. Goetze, Alexander Ivanov, Oleg Khristoforov, Diethard Kloepfel, Peter Koehler, Juergen Kleinschmidt, Vladimir Korobotchko, Jens Ringling, Guido Schriever, Aleksandr Vinokhodov

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472283

KEYWORDS: Extreme ultraviolet, Plasma, Solids, Optical filters, Xenon, Calibration, Extreme ultraviolet lithography, Lithography, Liquids, Plasma generation

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Next generation semiconductor chip manufacturing using extreme ultraviolet (EUV) lithography requires a brilliant radiation source with output power between 50 W and 120 W in intermediate focus. This is about five to ten times higher power than that of current DUV excimer lasers used in optical lithography. Lifetime and cost of ownership however, need to be comparable to today's technology. In the present paper experimental results of both laser produced plasma and gas discharge produced plasma EUV source development at XTREME technologies - the EUV joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany - are presented. Source characterization has been performed with calibrated metrology tools for measurement of energy, power, size, spectra and stability of the EUV emission. The laser plasma investigations are performed with a 1st experimental facility comprising a commercial 40 W Nd:YAG laser coupled to a liquid xenon-jet target system, which was developed by XTREME technologies. The EUV in-band power emitted from the 0.25 mm diameter plasma into 2p solid angle is 0.2 W, the conversion efficiency amounts 0.5 percent. Estimated EUV emission parameters using a 500 W laser for plasma generation to be installed in spring 2002 are discussed. The gas discharge EUV sources described here are based on efficient Xenon Z-pinches. In the 3rd prototype generation the plasma pinch size and the available emission angle have been matched to the etendue of the optical system of 2-3 mm2. The solid angle of emission from the pinch of 1.3 mm x 1.5 mm amounts 1.8 sr. The Z-pinch EUV source can be operated continuously at 1000 Hz with an in-band output power of 10 W in 1.8 sr. This corresponds to 4.5 W in intermediate focus, if no spectral purity filter is needed. The power emitted into a solid angle of 2p sr is 35 W. Emission energy stability ranges between 1 percent and 4 percent standard deviation. Spectral, temporal as well as spatial emission characteristics of the discharge source in dependence on the gas discharge geometry have been evaluated. The potentials as well as limits for power scaling of the two technological source concepts are discussed.

Proceedings Article | 6 May 2002 Paper

Paper

High-power-gas-discharge- and laser-plasma-based EUV sources

Frank Flohrer, Kai Gaebel, Diethard Kloepfel, Peter Koehler, Imtiaz Ahmad, S. Goetze, Juergen Kleinschmidt, Vladimir Korobotchko, Jens Ringling, Guido Schriever, Uwe Stamm

Proceedings Volume 4631, (2002) https://doi.org/10.1117/12.465786

KEYWORDS: Extreme ultraviolet, Plasmas, Xenon, Mirrors, High power lasers, Liquids, Solids, Calibration, Extreme ultraviolet lithography, Pulsed laser operation

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Proceedings Article | 25 February 2002 Paper

Paper

Precision machining of innovative materials using 157-nm excimer laser radiation

Andreas Ostendorf, Uwe Stamm, Thorsten Temme

Proceedings Volume 4426, (2002) https://doi.org/10.1117/12.456905

KEYWORDS: Silica, Laser ablation, Excimer lasers, Fluorine, Laser applications, Refractive index, Quartz, Glasses, Waveguides, Microfabrication

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Proceedings Article | 25 February 2002 Paper

Paper

History and future prospects of excimer lasers

Dirk Basting, Klaus Pippert, Uwe Stamm

Proceedings Volume 4426, (2002) https://doi.org/10.1117/12.456812

KEYWORDS: Excimer lasers, Laser applications, Lithography, Laser development, Electromyography, Excimers, Ultraviolet radiation, Pulsed laser operation, Manufacturing, Switches

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Proceedings Article | 20 August 2001 Paper

Paper

Compact Z-pinch EUV source for photolithography

Guido Schriever, Manfred Rahe, Uwe Stamm, Dirk Basting, Oleg Khristoforov, Aleksandr Vinokhodov, Vladimir Borisov

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436716

KEYWORDS: Extreme ultraviolet, Plasma, Optical lithography, Optics manufacturing, Extreme ultraviolet lithography, Lithography, Electrodes, EUV optics, Chlorine, Signal detection

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Proceedings Article | 30 April 2001 Paper

Paper

1-J and 300-W excimer laser with exceptional pulse stability for poly-Si crystallization

Michael Fiebig, Uwe Stamm, Peter Oesterlin, Naoyuki Kobayashi, Burkhard Fechner

Proceedings Volume 4295, (2001) https://doi.org/10.1117/12.424885

KEYWORDS: Excimer lasers, Annealing, LCDs, Manufacturing, Laser stabilization, Silicon, Optics manufacturing, Pulsed laser operation, Laser development, Amorphous silicon

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Proceedings Article | 12 April 2001 Paper

Paper

Reliable materials and instruments for 157-nm lithography

Klaus Vogler, Frank Voss, Elko Bergmann, Uwe Stamm, Wojciech Walecki, Dirk Basting

Proceedings Volume 4347, (2001) https://doi.org/10.1117/12.425041

KEYWORDS: Lithography, Vacuum ultraviolet, Optical components, Beam analyzers, Optical testing, Silver, Optical lithography, Semiconductors, Metrology, Profiling

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Proceedings Article | 12 April 2001 Paper

Paper

Development and characterization of advanced F2 laser source for 157-nm lithography

Klaus Vogler, Frank Voss, Elko Bergmann, Uwe Stamm, Sergei Govorkov, Gongxue Hua, Wojciech Walecki

Proceedings Volume 4347, (2001) https://doi.org/10.1117/12.425040

KEYWORDS: Lithography, Laser applications, Laser sources, Reliability, Laser components, Silver, Fourier transforms, Laser marking, Laser induced damage, Laser development

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Proceedings Article | 6 November 2000 Paper

Paper

Novel results of laser precision microfabrication with excimer lasers and solid state lasers

Uwe Stamm, Michael Fiebig, Sergei Govorkov, Eric Mayer, Rustem Osmanov, Michael Scaggs, Evgueni Slobodtchikov, Alexander Wiessner, Dirk Basting

Proceedings Volume 4088, (2000) https://doi.org/10.1117/12.405697

KEYWORDS: Excimer lasers, Laser development, Laser ablation, Microfabrication, Laser applications, Diode pumped solid state lasers, Nd:YAG lasers, Annealing, Pulsed laser operation, Fluorine

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Proceedings Article | 25 October 2000 Paper

Paper

Long-term test and characterization of optical components at 193 nm and 157 nm

Klaus Vogler, Ingo Klaft, Thomas Schroeder, Uwe Stamm, Klaus Mann, Oliver Apel, Christian Goerling, Uwe Leinhos

Proceedings Volume 4102, (2000) https://doi.org/10.1117/12.405292

KEYWORDS: Sensors, Optical components, Ultraviolet detectors, Signal detection, Excimer lasers, Mirrors, Absorption, Scattering, Laser irradiation, Nitrogen

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Proceedings Article | 5 July 2000 Paper

Paper

Advanced F2 lasers for microlithography

Klaus Vogler, Uwe Stamm, Igor Bragin, Frank Voss, Sergei Govorkov, Gongxue Hua, Juergen Kleinschmidt, Rainer Paetzel

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388991

KEYWORDS: Lithography, Laser stabilization, Sensors, Calibration, Metrology, Power meters, Pulsed laser operation, Laser resonators, Optical lithography, Laser metrology

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Proceedings Article | 5 July 2000 Paper

Paper

High-repetition-rate ultranarrow-bandwidth 193-nm excimer lasers for DUV lithography

Uwe Stamm, Rainer Paetzel, Igor Bragin, Juergen Kleinschmidt, Peter Lokai, Rustem Osmanov, Thomas Schroeder, Martin Sprenger, Wolfgang Zschocke

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388976

KEYWORDS: Excimer lasers, Lithography, Calibration, Pulsed laser operation, Laser development, Spectroscopy, Laser stabilization, Laser scanners, 3D scanning, Scanners

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Proceedings Article | 5 July 2000 Paper

Paper

Prospects for very high repetition rate lasers for microlithography

Igor Bragin, Vadim Berger, Rainer Paetzel, Uwe Stamm, Andreas Targsdorf, Juergen Kleinschmidt, Dirk Basting

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389003

KEYWORDS: Pulsed laser operation, Laser stabilization, Lithography, Pulsed power, Optical lithography, Deep ultraviolet, Electrodes, Excimer lasers, Gas lasers, Laser development

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Proceedings Article | 7 February 2000 Paper

Paper

High-power excimer lasers for high-throughput poly-Si annealing

Michael Fiebig, Rustem Osmanov, Uwe Stamm, Frank Vofl, Peter Oesterlin, Naoyuki Kobayashi, Burkhard Fechner, L. Uzuka

Proceedings Volume 3888, (2000) https://doi.org/10.1117/12.377054

KEYWORDS: Annealing, Excimer lasers, LCDs, Manufacturing, High power lasers, Laser stabilization, Optics manufacturing, Silicon, Laser applications, Amorphous silicon

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Proceedings Article | 26 July 1999 Paper

Paper

High-repetition-rate excimer lasers for DUV lithography

Uwe Stamm, Rainer Paetzel, Igor Bragin, Vincent Berger, Ingo Klaft, Juergen Kleinschmidt, Rustem Osmanov, Thomas Schroeder, Klaus Vogler, Wolfgang Zschocke, Dirk Basting

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354310

KEYWORDS: Excimer lasers, Lithography, Laser stabilization, Deep ultraviolet, Semiconducting wafers, Combined lens-mirror systems, Optical lithography, Reliability, Pulsed laser operation, Laser resonators

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Proceedings Article | 15 July 1999 Paper

Paper

High-power ultraviolet all-solid-state laser for industrial applications

Christoph Mehlmann, Thomas Schroeder, Peter Klopp, R. Koch, Uwe Stamm, Dirk Basting

Proceedings Volume 3618, (1999) https://doi.org/10.1117/12.352701

KEYWORDS: Ultraviolet radiation, Laser applications, Pulsed laser operation, Semiconductor lasers, Nd:YAG lasers, Manufacturing, Laser systems engineering, Resonators, High power lasers, Micromachining

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Proceedings Article | 25 June 1999 Paper

Paper

Excimer laser for 157-nm lithography

Uwe Stamm, Igor Bragin, Sergei Govorkov, Juergen Kleinschmidt, Rainer Paetzel, Evgueni Slobodtchikov, Klaus Vogler, Frank Vofl, Dirk Basting

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351152

KEYWORDS: Excimer lasers, Lithography, Laser resonators, Laser stabilization, Optical lithography, Deep ultraviolet, Laser applications, Vacuum ultraviolet, Resonators, Optical design

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Proceedings Article | 22 December 1998 Paper

Paper

High-average-power excimer lasers

Vladimir Borisov, Andrei Demin, Oleg Khristoforov, Yurii Kirykhin, Aleksandr Vinokhodov, V. Vodchits, Dirk Basting, Uwe Stamm, Frank Voss, Igor Bragin

Proceedings Volume 3574, (1998) https://doi.org/10.1117/12.334492

KEYWORDS: Pulsed laser operation, Excimer lasers, Electrodes, Gas lasers, Ultraviolet radiation, Fluctuations and noise, Laser applications, Laser development, Inductance, Energy efficiency

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Proceedings Article | 14 September 1998 Paper

Paper

Optimization of high-power excimer laser for TFT annealing

Heinrich Endert, Bruno Becker-de Mos, Uwe Stamm, Stefan Borneis, Frank Voss, Dirk Basting

Proceedings Volume 3343, (1998) https://doi.org/10.1117/12.321581

KEYWORDS: Excimer lasers, Annealing, LCDs, Amorphous silicon, Reliability, Manufacturing, Pulsed laser operation, Beam controllers, High power lasers, Silicon

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Proceedings Article | 29 June 1998 Paper

Paper

ArF excimer laser for 193-nm lithography

Uwe Stamm, Rainer Paetzel, Juergen Kleinschmidt, Klaus Vogler, Wolfgang Zschocke, Igor Bragin, Dirk Basting

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310730

KEYWORDS: Excimer lasers, Lithography, Laser stabilization, Pulsed laser operation, Silica, Optical lithography, Laser applications, Laser development, Laser resonators, Laser scanners

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Proceedings Article | 3 June 1998 Paper

Paper

High-average-power Ce:LiCaF laser at 1-KHz repetition rate tunable from 280 nm to 315 nm

Sergei Govorkov, A. Wiebner, Peter Genter, Uwe Stamm, Wolfgang Zschocke, Thomas Schroeder, Dirk Basting

Proceedings Volume 3274, (1998) https://doi.org/10.1117/12.309494

KEYWORDS: Tunable lasers, Nd:YAG lasers, Ultraviolet radiation, Solid state lasers, Crystals, Semiconductor lasers, Diodes, Laser crystals, Pulsed laser operation, Laser systems engineering

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Proceedings Article | 7 July 1997 Paper

Paper

ArF excimer laser for 193-nm lithography

Uwe Stamm, Juergen Kleinschmidt, Peter Heist, Igor Bragin, Rainer Paetzel, Dirk Basting

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276007

KEYWORDS: Excimer lasers, Lithography, Laser development, Light sources, Optical lithography, Scanners, Combined lens-mirror systems, Imaging systems, High power lasers, Laser stabilization

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Proceedings Article | 9 May 1997 Paper

Paper

Multiple-watt ultraviolet power from a diode-pumped solid state laser at 1-kHz repetition rate

Uwe Stamm, Wolfgang Zschocke, Bernard Nikolaus, Peter Genter, Dirk Basting

Proceedings Volume 2991, (1997) https://doi.org/10.1117/12.273727

KEYWORDS: Pulsed laser operation, Semiconductor lasers, Ultraviolet radiation, Laser drilling, Frequency conversion, Nd:YAG lasers, Q switched lasers, Resonators, Diode pumped solid state lasers, Micromachining

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Proceedings Article | 4 April 1997 Paper

Paper

Recent developments in industrial excimer laser technology

Uwe Stamm, Rainer Paetzel, Igor Bragin, Juergen Kleinschmidt, Frank Voss, Dirk Basting

Proceedings Volume 3092, (1997) https://doi.org/10.1117/12.270114

KEYWORDS: Laser applications, Excimer lasers, Laser stabilization, Lithography, High power lasers, Fluorine, Laser marking, Micromachining, Laser development, Resonators

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Proceedings Article | 31 March 1997 Paper

Paper

Optimization of 200-W excimer laser for TFT annealing

V. Pfeufer, Frank Voss, Bruno Becker-de Mos, Uwe Stamm, Heinrich Endert, Dirk Basting

Proceedings Volume 2992, (1997) https://doi.org/10.1117/12.270097

KEYWORDS: Excimer lasers, Annealing, Gas lasers, Laser stabilization, Pulsed laser operation, Silicon, Amorphous silicon, LCDs, Semiconductor lasers, High power lasers

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Proceedings Article | 31 March 1997 Paper

Paper

Excimer lasers for material ablation cross the 1.5 kHz mark

Rainer Paetzel, Uwe Stamm, Igor Bragin, Frank Voss, Bernard Nikolaus, Heinrich Endert, Dirk Basting

Proceedings Volume 2992, (1997) https://doi.org/10.1117/12.270082

KEYWORDS: Excimer lasers, Pulsed laser operation, Laser applications, Laser ablation, Solid state lasers, Switches, Solid state electronics, Magnetism, Laser development, Micromachining

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Proceedings Article | 27 March 1997 Paper

Paper

Excimer lasers in manufacturing

Heinrich Endert, Rainer Paetzel, Uwe Stamm, Dirk Basting

Proceedings Volume 2993, (1997) https://doi.org/10.1117/12.270013

KEYWORDS: Excimer lasers, Optics manufacturing, Laser applications, Manufacturing, UV optics, Ultraviolet radiation, Laser development, Pulsed laser operation, Laser resonators, Annealing

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Proceedings Article | 7 June 1996 Paper

Paper

Extremely narrow-bandwidth high-repetition-rate laser for high-NA step-and-scan tools

Juergen Kleinschmidt, Rainer Paetzel, Peter Heist, Uwe Stamm, Dirk Basting, Michael Powell

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240944

KEYWORDS: Resonators, Fabry–Perot interferometers, Excimer lasers, Laser resonators, Mirrors, Beam splitters, Deep ultraviolet, Oscillators, Polarization, Optical components

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Proceedings Article | 29 March 1996 Paper

Paper

Recent results on long-life 1-kHz excimer laser development

Ulrich Rebhan, Igor Bragin, Frank Voss, Uwe Stamm

Proceedings Volume 2702, (1996) https://doi.org/10.1117/12.236881

KEYWORDS: Pulsed laser operation, Excimer lasers, Laser applications, Laser development, Laser stabilization, Laser sources, Power supplies, Laser energy, Electrodes, Gas lasers

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Proceedings Article | 1 June 1992 Paper

Paper

High-spectral-brightness 1.0-pm bandwidth DUV lithography excimer laser

Peter Lokai, Ulrich Rebhan, Uwe Stamm, Hermann Buecher, Hans-Juergen Kahlert, Dirk Basting

Proceedings Volume 1674, (1992) https://doi.org/10.1117/12.130371

KEYWORDS: Fabry–Perot interferometers, Optical lithography, Deep ultraviolet, Excimer lasers, Resonators, Lithography, Spectroscopy, Failure analysis, Modulation, Reliability

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Proceedings Article | 1 February 1992 Paper

Paper

Picosecond pulses from a neodymium-doped fiber laser mode-locked with a linear external cavity

Geworg Sargsjan, Uwe Stamm, Clemens Unger, Matthias Mueller

Proceedings Volume 1581, (1992) https://doi.org/10.1117/12.134971

KEYWORDS: Mode locking, Mirrors, Fiber lasers, Modulation, Picosecond phenomena, Laser resonators, Pulsed laser operation, Optical fibers, Reflectivity, Refractive index

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Proceedings Article | 1 October 1991 Paper

Paper

Pulse formation and characteristics of the cw mode-locked titanium-doped sapphire laser

Wolfgang Zschocke, Uwe Stamm, Ernst Heumann, Mario Ledig, Uwe Guenzel, Jiri Kvapil, Michael Koselja, Jiri Kubelka

Proceedings Volume 1501, (1991) https://doi.org/10.1117/12.46861

KEYWORDS: Mode locking, Pulsed laser operation, Sapphire lasers, Continuous wave operation, Picosecond phenomena, Laser resonators, Mirrors, Modulation, Optical filters, Computer simulations

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Proceedings Article | 1 May 1991 Paper

Paper

High spatial and temporal resolution in the optical investigation of biological objects

Tobias Damm, Michael Kempe, Uwe Stamm, K. Stolberg, Heidrun Wabnitz

Proceedings Volume 1403, (1991) https://doi.org/10.1117/12.57346

KEYWORDS: Luminescence, Photons, Spatial resolution, Laser applications, Deconvolution, Molecules, Biomedical optics, Laser scanners, Imaging systems, Temporal resolution

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Proceedings Article | 1 March 1991 Paper

Paper

Localization of hot spots in silicon devices with a laser scanning microscope

Harald Bergner, A. Krause, Uwe Stamm

Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24435

KEYWORDS: Silicon, Semiconductor lasers, Laser scanners, Microscopes, Temperature metrology, Optoelectronic devices, Absorption, Integrated circuits, Semiconductors, Integrated optics

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Proceedings Article | 1 February 1991 Paper

Paper

Dynamic behavior of internal elements of high-frequency integrated circuits studied by time-resolved optical-beam-induced current (OBIC) method

Harald Bergner, Klaus Hempel, Uwe Stamm

Proceedings Volume 1362, (1991) https://doi.org/10.1117/12.24560

KEYWORDS: Optoelectronic devices, Switching, Transistors, Physics, Optical components, Integrated circuits, Microscopes, Laser beam diagnostics, Integrated optics, Spatial resolution

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Showing 5 of 50 publications

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